| Title | Threshold Voltage Control of HfSiON / Poly-Si pMOSFETs by Fluorine Incorporation to Channel and its Impact on Short Channel Characteristics |
| Author | Koji Nagatomo, Takeshi Watanabe, Katsuyuki Sekine, Motoyuki Sato, Kenji Kojima, Mariko Takayanagi, Shigeru Kawanaka, Atsushi Azuma, Yoshiaki Toyoshima (Toshiba Co. Semiconductor Company, Japan) |
| Page | pp. 55 - 56 |
| Title | Mechanism and Relationship between Capacitance Dispersion and Dipole Oscillator Model for Fluorinated Al2O3 |
| Author | Chao Sung Lai, Kung Ming Fan, Hsing Kan Peng (Chang Gung Univ., Taiwan), Shian Jyh Lin, Chung Yuan Lee (Nanya Technology Co., Taiwan), Chi Fong Ai (Institute of Nuclear Energy Research, Taiwan) |
| Page | pp. 57 - 58 |
| Title | Study of peeling process at doped-NiSi/SiO2 interface |
| Author | Masahiro Saito, Naoyuki Sugiyama, Keiko Matsuda, Tomomi Sugimoto, Takashi Miyamoto, Takashi Yamamoto (Toray Research Center, Inc., Japan), Kimihiko Hosaka, Takayuki Aoyama (Fujitsu Laboratories Ltd., Japan) |
| Page | pp. 59 - 60 |
| Title | A New Insight into Control of Fermi Level Pinning in TiN/HfSiON Gate Stack |
| Author | Akio Ohta, Seiichi Miyazaki (Hiroshima Univ., Japan), Yasushi Akasaka (Selete, Japan), Heiji Watanabe (Osaka Univ., Japan), Kenji Shiraishi (Univ. of Tsukuba, Japan), Keisaku Yamada (Waseda Univ., Japan), Seiji Inumiya, Yasuo Nara (Selete, Japan) |
| Page | pp. 61 - 62 |
| Title | Vfb Roll-off of Metal Gate/HfO2/SiO2/Si Capacitors in Thinner EOT Regime |
| Author | Koji Akiyama (MIRAI-ASET, Japan), Wenwn Wang (MIRAI-ASRC, China), Wataru Mizubayashi (MIRAI-ASRC, Japan), Kazi Salam (MIRAI-ASET, Bangladesh), Minoru Ikeda (MIRAI-ASET, Japan), Hiroyuki Ota (MIRAI-ASRC, Japan), Toshihide Nabatame (MIRAI-ASET, Japan), Akira Toriumi (Univ. of Tokyo, Japan) |
| Page | pp. 63 - 64 |
| Title | VFB Modification by Thin La2O3 Insertion into HfO2/SiO2 Interface |
| Author | Yoshiki Yamamoto, Koji Kita, Akira Toriumi (Univ. of Tokyo, Japan) |
| Page | pp. 65 - 66 |