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2006 International Workshop on Dielectric Thin Films for Future ULSI Devices

Session S4 Characterization and Control
Time: 11:10 - 12:20 Thursday, November 9, 2006
Chairs: Kenji Shiraishi (Univ. of Tsukuba, Japan), Koji Eriguchi (Kyoto Univ., Japan)

S4-1 (Time: 11:10 - 11:40)
Title(Invited Paper) Characterization of structure and composition of high-k dielectrics with ion scattering
AuthorTorgny Gustafsson, Eric Garfunkel, Lyudmila Goncharova, Robin Barnes, Ozgur Celik, Mateus Dalponte, Tian Feng (Rutgers Univ., United States), Gennadi Bersuker, Pat Lysaght (Sematech, United States)
Pagepp. 49 - 50

S4-2 (Time: 11:40 - 12:00)
TitleCharacterization of metal/high-k structures using a monoenergetic positron beam
AuthorA. Uedono, T. Naito, T. Otsuka, K. Shiraishi, K. Yamabe (Univ. of Tsukuba, Japan), S. Miyazaki (Hiroshima Univ., Japan), H. Watanabe (Osaka Univ., Japan), N. Umezawa, T. Chikyow (National Institute for Materials Science, Japan), Y. Akasaka, S. Kamiyama, Y. Nara (Selete, Japan), K. Yamada (Waseda Univ., Japan)
Pagepp. 51 - 52

S4-3 (Time: 12:00 - 12:20)
TitleStructural Change of the Interfacial SiO2 Layer between HfO2 layers and Si Substrates
AuthorTakayoshi Shimura, Eiji Mishima, Kohta Kawamura, Heiji Watanabe, Kiyoshi Yasutake (Osaka Univ., Japan)
Pagepp. 53 - 54