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2006 International Workshop on Dielectric Thin Films for Future ULSI Devices

Session S3 Silicon Dioxide
Time: 9:00 - 10:50 Thursday, November 9, 2006
Chairs: Akitomo Tachibana (Kyoto Univ., Japan), Hiroyuki Kageshima (NTT Basic Research Laboratories, Japan)

S3-1 (Time: 9:00 - 9:30)
Title(Invited Paper) Unified Si oxidation reaction model mediated by the point defect generation at SiO2/Si interfaces
AuthorYuji Takakuwa, Shuichi Ogawa (Tohoku Univ., Japan)
Pagepp. 39 - 40

S3-2 (Time: 9:30 - 9:50)
TitleLayer-by-Layer Oxidation on Si(001) Surface Studied by Real-Time Photoelectron Spectroscopy Using Synchrotron Radiation
AuthorShuichi Ogawa (Tohoku Univ., Japan), Akitaka Yoshigoe (Japan Atomic Energy Agency, Japan), Shinji Ishidzuka (Akita National College of Tech., Japan), Yuden Teraoka (Japan Atomic Energy Agency, Japan), Yuji Takakuwa (Tohoku Univ., Japan)
Pagepp. 41 - 42

S3-3 (Time: 9:50 - 10:10)
TitleEnhanced Oxygen Self-Diffusion in SiO2 during Si Thermal Oxidation: Effect of the SiO2/Si Interface
AuthorMasashi Uematsu (NTT Basic Research Laboratories, Japan), Marika Gunji, Kohei M. Itoh (Keio Univ., Japan)
Pagepp. 43 - 44

S3-4 (Time: 10:10 - 10:30)
TitleTheoretical study on emission of Si-related species at Si-oxide/Si interfaces
AuthorHiroyuki Kageshima, Masashi Uematsu (NTT Basic Research Laboratories, Japan)
Pagepp. 45 - 46

S3-5 (Time: 10:30 - 10:50)
TitleStrain Distribution around SiO2/Si Interface in Nanostructure: A Molecular Dynamics Study
AuthorHiromichi Ohta (Waseda Univ., Japan), Takanobu Watanabe (Waseda Univ., PRESTO, Japan), Iwao Ohdomari (Waseda Univ., Japan)
Pagepp. 47 - 48