(Back to Session Schedule)

2006 International Workshop on Dielectric Thin Films for Future ULSI Devices

Session S2 High-k/Ge
Time: 14:50 - 16:00 Wednesday, November 8, 2006
Chairs: Kuniyuki Kakushima (Tokyo Inst. of Tech., Japan), Minghwei Hong (National Tsing Hua Univ., Taiwan)

S2-1 (Time: 14:50 - 15:20)
Title(Invited Paper) Characterization of high-k/Ge gate stacks and the realization of high carrier mobility MIS transistors
AuthorAkira Nishiyama, Yoshiki Kamata, Ryosuke Iijima, Tsunehiro Ino, Yuuichi Kamimuta, Masato Koyama (Toshiba Co., Japan)
Pagepp. 11 - 12

S2-2 (Time: 15:20 - 15:40)
TitlePhotoemission Study of HfO2/Ge(100) Stacked Structures
AuthorHiroshi Nakagawa, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ., Japan)
Pagepp. 13 - 14

S2-3 (Time: 15:40 - 16:00)
TitleLow Temperature Zerbst Analysis of Au/High-k/Ge MIS Capacitors
AuthorHideyuki Nomura, Tomonori Nishimura, Koji Kita, Akira Toriumi (Univ. of Tokyo, Japan)
Pagepp. 15 - 16