2006 International Workshop on Dielectric Thin Films for Future ULSI Devices Technical Program

2006 International Workshop on Dielectric Thin Films for Future ULSI Devices

Session P2 Poster Reception (Light Meal)
Time: 17:10 - 19:10 Thursday, November 9, 2006

P2-1 (Ultrathin silicon dioxide, oxynitride and oxide-nitride composite dielectrics)

Title	Bonding Structure of Silicon Oxynitride Grown by Plasma-Enhanced Chemical Vapor Deposition
Author	C. K. Wong, Hei Wong, V. Filip, P. S. Chung (City Univ. of Hong Kong, Hong Kong)
Page	pp. 67 - 68

P2-2 (Ultrathin silicon dioxide, oxynitride and oxide-nitride composite dielectrics)

Title	Observation of initial oxidation process on Si(110)-16x2 by scanning tunneling microscopy
Author	Hideaki Togashi, Yuya Takahashi, Atsushi Kato (Tohoku Univ., Japan), Hidehito Asaoka (Japan Atomic Energy Agency, Japan), Atsushi Konno, Maki Suemitsu (Tohoku Univ., Japan)
Page	pp. 69 - 70

P2-3 (Ultrathin silicon dioxide, oxynitride and oxide-nitride composite dielectrics)

Title	Suppression of Oxidation Reaction by Oxidation-Induced Strain at Ultrathin Si-Oxide/Si Interface
Author	Toru Akiyama (Mie Univ., Japan), Hiroyuki Kageshima, Masashi Uematsu, Tomonori Ito (NTT Basic Research Laboratories, NTT Co., Japan)
Page	pp. 71 - 72

P2-4 (Theoretical approaches to gate dielectrics/Si structure)

Title	Study of Electron Tunneling Components in P⁺ Poly-Gate pMOSFETs from Direct Tunneling to Fowler-Nordheim Region
Author	Ting-Kuo Kang (Cheng Shiu Univ., Taiwan)
Page	pp. 73 - 74

P2-5 (Theoretical approaches to gate dielectrics/Si structure)

Title	Dielectric properties of the interface between Si and SiO₂
Author	Sadakazu Wakui, Jun Nakamura, Akiko Natori (Univ. of Electro-Communications, Japan)
Page	pp. 75 - 76

P2-6 (Theoretical approaches to gate dielectrics/Si structure)

Title	Effective Mass Anomalies of Strained Silicon Thin Films and Crystals: a first-principles study
Author	Jun Yamauchi (Keio Univ., Japan)
Page	pp. 77 - 78

P2-7 (Theoretical approaches to gate dielectrics/Si structure)

Title	Local dielectric analysis of gate insulator oxide cluster models
Author	Kentaro Doi, Yutaka Mikazuki, Shinya Sugino, Akitomo Tachibana (Kyoto Univ., Japan)
Page	pp. 79 - 80

P2-8 (Growth and related process of gate dielectric films)

Title	Ultra-Low Temperature Growth of Aluminum Silicate Dielectric Formed by Nitric Acid
Author	Ming-Wen Ma, Kuo-Shing Kao, Tien-Sheng Chao, Tan-Fu Lei (National Chiao Tung Univ., Taiwan)
Page	pp. 81 - 82

P2-9 (Growth and related process of gate dielectric films)

Title	Impact of In-Situ Post Nitridation Annealing for Successful Fabrication of HfSiON Thin Film
Author	Sadayoshi Horii, Dai Ishikawa, Atsushi Sano, Yoshinori Imai (Hitachi Kokusai Electric Inc., Japan)
Page	pp. 83 - 84

P2-10 (Growth and related process of gate dielectric films)

Title	The Electrical Properties of Thermal and PE-ALD Ta₂O₅
Author	Wan Joo Maeng, Yo Sep Yang, Chan Gyung Park, Hyungjun Kim (POSTECH, Republic of Korea)
Page	pp. 85 - 86

P2-11 (Growth and related process of gate dielectric films)

Title	X-ray photoelectron spectroscopy study on SiO₂ formed on several orientated c-Si with high-pressure water vapor
Author	Naoya Yamamoto (Ishikawajima-Harima Heavy Industries Co., Ltd., Japan), Satoshi Tanaka (Meiji Univ., Japan), Hitoshi Sai, Ryusuke Imai (Toyota Technological Institute, Japan), Eiji Ikenaga, Ichiro Hirosawa (JASRI/SPring-8, Japan), Yoshio Oshita (Toyota Technological Institute, Japan), Atsushi Ogura (Meiji Univ., Japan)
Page	pp. 87 - 88

P2-12 (High-k gate dielectrics)

Title	Nitrogen Incorporation in Hafnium Oxide using Plasma Immersion Implantation
Author	B. Sen, Hei Wong, B. L. Yang, A. P. Huang, P. K. Chu, V. Filip (City Univ. of Hong Kong, Hong Kong), C. K. Sarkar (Jadavpur Univ., India)
Page	pp. 89 - 90

P2-13 (High-k gate dielectrics)

Title	The Electrical Characteristics of Thin Yttrium Oxide Film on Si Substrate with NH₃ Plasma Treatment
Author	Tung-Ming Pan, Jian-Der Lee, Chun-Lin Chen, Sung-Ju Hou, Wei-Hao Shu, Tsung-Te Chen, Wen-Jen Lai (Chang Gung Univ., Taiwan)
Page	pp. 91 - 92

P2-14 (High-k gate dielectrics)

Title	The Physical and Electrical Properties of Thin Lanthanum Oxide Gate Dielectrics with Al or Al/TaN Metal Gate
Author	Tung-Ming Pan, Chun-Lin Chen, Wen-Wei Yeh, Jian-Der Lee, Te-Yi Yu, Kao-Ming Liao, Tin-Wei Wu, Shin-Chieh Lee, Yung-Shiuan Chen, Tsung-Te Chen, Wen-Jen Lai (Chang Gung Univ., Taiwan)
Page	pp. 93 - 94

P2-15 (High-k gate dielectrics)

Title	High-k Gate Dielectric Films Studied by Extremely Asymmetric X-ray Diffraction and X-ray Photoelectron Spectroscopy
Author	Yuki Ito, Koichi Akimoto, Hironori Yoshida (Nagoya Univ., Japan), Takashi Emoto (Toyota National College of Tech., Japan), Daisuke Kobayashi, Kazuyuki Hirose (ISAS, Japan)
Page	pp. 95 - 96

P2-16 (High-k gate dielectrics)

Title	First-Principles Study on Dielectric Response of Amorphous HfAlO
Author	Hiroyoshi Momida (National Institute for Materials Science, Japan), Tomoyuki Hamada (Hitachi, Ltd., Japan), Yoshiteru Takagi (Univ. of Tokyo, Japan), Takenori Yamamoto, Tsuyoshi Uda (AdvanceSoft Co., Japan), Takahisa Ohno (National Institute for Materials Science, Japan)
Page	pp. 97 - 98

P2-17 (High-k gate dielectrics)

Title	Dispersive dielectric characteristics of HfSiON with poly-Si gate ---Dependence on nitrogen concentration of TDDB slope---
Author	Chihiro Tamura, Tatsuya Naito (Univ. of Tsukuba, Japan), Seiji Inumiya (Selete, Japan), Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba, Japan)
Page	pp. 99 - 100

P2-18 (High-k gate dielectrics)

Title	Dispersive dielectric characteristics of HfSiON with poly-Si gate (2) –correlation of conduction and lifetime based on inhomogeneous defect distribution-
Author	Tatsuya Naito, Chihiro Tamura (Univ. of Tsukuba, Japan), Seiji Inumiya (Selete, Japan), Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba, Japan)
Page	pp. 101 - 102

P2-19 (High-k gate dielectrics)

Title	Effect of Post-Deposition Annealing on the Electrical Properties of MOCVD-grown Praseodymium Silicate MIS Diode
Author	Yoshishige Tsuchiya (Tokyo Inst. of Tech., Japan), Ryousuke Furukawa (Tokyo Inst. of Tech. and Musashi Inst. of Tech., Japan), Takaya Suto, Hiroshi Mizuta, Shunri Oda (Tokyo Inst. of Tech., Japan), Hiroshi Nohira, Takuya Maruizumi, Yasuhiro Shiraki (Musashi Inst. of Tech., Japan)
Page	pp. 103 - 104

P2-20 (High-k gate dielectrics)

Title	Thermal Stability and Electrical Properties of HfON Gate Dielectric with HfO₂ Using N₂O Treatment
Author	Shao-Ming Yang, Chao-Hsin Chien, Tan-Fu Lei (National Chiao Tung Univ., Taiwan)
Page	pp. 105 - 106

P2-21 (High-k gate dielectrics)

Title	Analysis of Leakage Current through Ultrathin HfSiO_xN/SiO₂ Stack Gate Dielectric Capacitors with TiN/W/TiN Gate
Author	Yanli Pei, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ., Japan), Taiichi Akasaka, Yasuo Nara (Selete, Japan)
Page	pp. 107 - 108

P2-22 (Metal gate electrodes)

Title	Nitrogen Incorporation and Post Metal Anneal Effect on Metal Work Function of HfN_x/Al₂O₃/p-Si Gate Stack
Author	Chao-Sung Lai, Hsing-Kan Peng, Kung-Ming Fan (Chang Gung Univ., Taiwan), Jer-Chyi Wang, Shian-Jyh Lin, Chung-Yuan Lee (Nanya Technology Co., Taiwan)
Page	pp. 109 - 110

P2-23 (Metal gate electrodes)

Title	First-Principles Calculation of Electrostatic Property of the Interface : Ultra-thin-Al / Si(111)
Author	Tomo Shimizu, Kenji Natori (Univ. of Tsukuba, Japan), Jun Nakamura, Akiko Natori (Univ. of Electro-Communications, Japan)
Page	pp. 111 - 112

P2-24 (Metal gate electrodes)

Title	Study of Vfb modulation mechanism of impurity doped Ni-FUSI
Author	Takashi Yamamoto, Takashi Miyamoto, Keiko Matsuda, Shingo Ogawa, Fumito Takeno, Tomomi Sugimoto, Noriyuki Fujiyama (Toray Research Center, Inc., Japan), Kimihiko Hosaka, Takayuki Aoyama (Fujitsu Laboratories Ltd., Japan)
Page	pp. 113 - 114

P2-25 (Gate dielectric wearout and reliability)

Title	Study of Self-Heating in Si Nano Structure for FB-SGT with High-k Dielectric Films
Author	Tetsuo Endoh, Kousuke Tanaka (Tohoku Univ., Japan)
Page	pp. 115 - 116

P2-26 (Gate dielectric wearout and reliability)

Title	Visualization of Two-dimesional Distribution of Dielectric Degradation by Stress Induced Surface Roughness of Tunnel Silicon Dioxide
Author	Yui Tokukawa, Shinichi Okamoto, Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba, Japan), Masaaki Ogino, Hitoshi Kuribayashi, Yoshiyuki Sugahara (Fuji Electric Advanced Technology, Japan)
Page	pp. 117 - 118