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2006 International Workshop on Dielectric Thin Films for Future ULSI Devices

Session P1 Poster Session
Time: 16:50 - 17:50 Wednesday, November 8, 2006

P1-1 (Ferroelectric and high-k films for memory applications)
TitleBroadband dielectric spectroscopy of a ferroelectric liquid crystal
AuthorShyamal Kumar Kundu, Shin Yagihara (Tokai Univ., Japan)
Pagepp. 17 - 18

P1-2 (Electrical characterization of gate dielectrics)
TitleElectron trap characteristics of silicon-rich silicon-nitride thin films
AuthorToshiyuki Mine, Koji Fujisaki, Takeshi Ishida, Yasuhiro Shimamoto , Kazuyoshi Torii (Hitachi, Ltd., Japan)
Pagepp. 19 - 20

P1-3 (Electrical characterization of gate dielectrics)
TitleDopant Concentration Influence on Scanning Capacitance Microscopy Imaging in Ultrathin SiO2 Films
AuthorYuichi Naitou, Atsushi Ando, Hisato Ogiso (AIST, Japan), Heiji Watanabe, Kiyoshi Yasutake (Osaka Univ., Japan)
Pagepp. 21 - 22

P1-4 (Electrical characterization of gate dielectrics)
TitleEvaluation of Trapped Charge Distributions in Stressed Gate SiO2 Films using Conductive Atomic Force Microscopy
AuthorAkiyoshi Seko (Nagoya Univ., Japan), Yukihiko Watanabe (Toyota Central R&D Labs., Inc., Japan), Mitsuo Sakashita, Akira Sakai, Masaki Ogawa, Shigeaki Zaima (Nagoya Univ., Japan)
Pagepp. 23 - 24

P1-5 (Characterization and control of gate dielectric/Si interface)
TitleX-ray Photoelectron Spectroscopy Study on Dielectric Properties of AlN and Al2O3 Films
AuthorKazuyuki Hirose (Institute of Space and Astronautical Science, Japan), Haruhiko Suzuki, Toru Matsuda, Yasunori Takenaga, Hiroshi Nohira (Musashi Inst. of Tech., Japan), Eiji Ikenaga (JASRI/SPring-8, Kuwait), Daisuke Kobayashi (Institute of Space and Astronautical Science, Japan), Takeo Hattori (Tohoku Univ., Japan)
Pagepp. 25 - 26

P1-6 (Characterization and control of gate dielectric/Si interface)
TitleSiO2/Si Interfacial Lattice Strain Studied by Extremely Asymmetric X-ray Diffraction
AuthorHironori Yoshida, Koichi Akimoto, Yuki Ito (Nagoya Univ., Japan), Takashi Emoto (Toyota National College of Tech., Japan), Yamamoto Naoya (Ishikawajima-Harima Heavy Industries Co., Ltd., Japan), Yoshio Oshita (Toyota Technological Institute, Japan), Ogura Atsushi (Meiji Univ., Japan)
Pagepp. 27 - 28

P1-7 (Characterization and control of gate dielectric/Si interface)
TitleEffect of Deposition Temperature on Chemical Structure of Lanthanum Oxide/Si Interface Structure
AuthorHiroshi Nohira, Toru Matsuda (Musashi Inst. of Tech., Japan), Kiichi Tachi, Yasuhiro Shiino, Jaeyeol Song, Yusuke Kuroki, Jin Aun Ng , Parhat Ahmet , Kuniyuki Kakushima, Kazuo Tsutsui (Tokyo Inst. of Tech., Japan), Eiji Ikenaga, Keisuke Kobayashi (JASRI/SPring-8, Japan), Hiroshi Iwai (Tokyo Inst. of Tech., Japan), Takeo Hattori (Tokyo Inst. of Tech. and Musashi Inst. of Tech., Japan)
Pagepp. 29 - 30

P1-8 (Characterization and control of gate dielectric/Si interface)
TitleCharacterization of Dielectric Stack Structures of Hafnium Silicate and Silicon Oxnitride formed on Si(100)
AuthorAkio Ohta, Hiroshi Nakagawa, Hideki Murakami, Seiichirou Higashi, Seiichi Miyazaki (Hiroshima Univ., Japan), Takaaki Kawahara, Kazuyoshi Torii, Yasuo Nara (Selete, Japan)
Pagepp. 31 - 32

P1-9 (Mobility enhancement technology)
TitleHigh Performance LTPS TFTs with HfO2 Gate Dielectric and Nitric Acid Pre-Treatment
AuthorMing-Wen Ma, Tsung-Yu Yang, Kuo-Shing Kao, Chun-Jung Su, Tien-Sheng Chao, Tan-Fu Lei (National Chiao Tung Univ., Taiwan)
Pagepp. 33 - 34

P1-10 (Mobility enhancement technology)
TitleMobility Enhancement in Local Strained Channel nMOSFETs on (111) Substrate
AuthorWen-Cheng Lo, Ya-Hsin Kuo (National Chiao Tung Univ., Taiwan), Yao-Jen Lee (National Nano Device Labs., Taiwan), Tien-Sheng Chao, Chun-Yen Chang (National Chiao Tung Univ., Taiwan)
Pagepp. 35 - 36

P1-11 (Mobility enhancement technology)
TitleElectron mobility enhancement of strained-Si FETs
AuthorAya Seike, Tomoyuki Tange, Itutaku Sano, Yuuki Sugiura, Iwao Ohdomari (Waseda Univ., Japan)
Pagepp. 37 - 38