2004 International Workshop on Dielectric Thin Films for Future ULSI Devices

2004 International Workshop on Dielectric Thin Films for Future ULSI Devices

Program

Papers (Oral)

<+>: Invited paper

Wednesday May 26, 2004

12:40-12:50

Openning Address

Keynote Speeches (12:50-14:30)
Chairpersons: S. Zaima (Nagoya Univ), S. Miyazaki (Hiroshima Univ.)

12:50-13:40

<+>

title	Future Trends in Microelectronics
author(s)	Yoshio Nishi(Stanford Univ., USA)
pages	pp. 1 - 2

13:40-14:30

<+>

title	Materials Engineering for High-k Gate Stack Technology
author(s)	Akira Toriumi(Univ. of Tokyo)
pages	pp. 3 - 4

Coffee Break (20min.)

Session 1 (14:50-17:10)
Chairpersons: Y. Tsunashima (Toshiba Corp.), M. M. Heyns (IMEC)

14:50-15:20

<+>

title	Scaling of Hf-based High-k Dielectrics
author(s)	M. M. Heyns, S. Beckx, M. Caymax(IMEC, Belgium), J. Chen(TI assignee at IMEC), M. Claes(IMEC, Belgium), B. Coenegrachts(LAM Research corporation assignee at IMEC), S. De Gendt, R. Degraeve, A. Delabie, W. Deweerd, G. Groeseneken(IMEC, Belgium), S. Hayashi(Matsushita assignee at IMEC), K. Henson(IMEC, Belgium), J. Hooker(Philips research leuven), M. Houssa, T. Kauerauf(IMEC, Belgium), A. Kerber(Infineon assignee at IMEC), D. H. Kwak(Samsung assignee at IMEC), R. Lander(Philips research leuven), G. Lujan(IMEC, Belgium), M. Niwa(Matsushita assignee at IMEC), L. Pantisano, R. Puurunen, L-A. Ragnarson, E. Rohr, T. Schram(IMEC, Belgium), Y. Shimamoto(Renesas/Hitachi assignee at IMEC), W. Tsai(INTEL assignee at IMEC), S. Van Elshocht(IMEC, Belgium), J. Vertommen(LAM Research corporation assignee at IMEC), W. Vandervorst, S. Kubicek(IMEC, Belgium)
pages	pp. 5 - 6

15:20-15:50

<+>

title	Beyond Hf-based High-k Dielectrics: How do we get to 0.5nm?
author(s)	A. Kingon(North Carolina St. Univ., USA)
pages	pp. 7 - 8

15:50-16:10

title	Hf-Profile Engineered HfSiON Gate Dielectrics with Poly-Si Gate
author(s)	Masao Inoue, Jiro Yugami, Masaharu Mizutani(Renesas Technology Corp./Wafer Process Engineering Development Div.), Koji Nomura(Wafer Process Engineering Dept.(1), Renesas Semiconductor Engineering Corp.), Junichi Tsuchimoto, Yoshikazu Ohno, Masahiro Yoneda(Renesas Technology Corp./Wafer Process Engineering Development Div.)
pages	pp. 9 - 10

16:10-16:30

title	The Threshold Voltage Control Method for Poly-Si Gated High-k MOSFETs with HfO₂ and In-situ Metal-oxynitride Gate Stack
author(s)	Tsunehisa SAKODA, Masaomi YAMAGUCHI, Hiroshi MINAKATA, Makoto NAKAMURA, Masatoshi FUKUDA, Yoshihiro SUGIYAMA, Yasuo NARA(Fujitsu Laboratories Ltd.)
pages	pp. 11 - 12

16:30-16:50

title	Origin of Flatband Voltage Shift in Poly-Si /Hf-based High-k Gate Dielectrics and Vfb Dependence on Gate Stack Structure
author(s)	Makoto Miyamura, Koji Masuzaki, Heiji Watanabe, Nobuyuki Ikarashi, Toru Tatsumi(System Devices Research Laboratories, NEC Corp.)
pages	pp. 13 - 14

16:50-17:10

title	Performance Improvements of HfO_x(N) and HfAlO_x(N) MOSFETs by Post Nitrogen Bond Rearrangement Process
author(s)	K. Iwamoto(MIRAI-ASET), T. Nishimura(MIRAI-ASRC), K. Tominaga(MIRAI-ASET), W. Mizubayashi(MIRAI-ASRC), H. Hisamatsu, N. Mise, K. Yamamoto, M. Kadoshima, N. Yasuda(MIRAI-ASET), H. Ota, T. Horikawa(MIRAI-ASRC), T. Nabatame(MIRAI-ASET), A. Toriumi(MIRAI-ASRC, Department of Materials Science, The University of Tokyo)
pages	pp. 15 - 16

Intermission (10min.)

Announcement (17:20-17:35)

17:20-17:35

title	Promotion of Nanotechnology Researchers Network (NANONET) Project
author(s)	Hidetoshi Nakamura(Nanotechnology Researchers Network Center of Japan)

Special Lectures (17:35-18:35)
Chairpersons: H. Nohira (Musashi Inst. of Tech.), A. Sakai (Nagoya Univ.)

17:35-18:05

<+>

title	Special Lecture(1)
author(s)	Takeo Hattori (Musashi Inst. of Tech.)

18:05-18:35

<+>

title	Special Lecture(2)
author(s)	Yukio Yasuda(Kouchi Univ. of Tech.)

Thursday May 27, 2004

Session 2 (9:00-10:30)
Chairpersons: Y. Sugita (Fujitsu Labs.), G. Lucovsky (NCSU)

9:00-9:30

<+>

title	Bond-strain and Defects at Si-SiO₂ and Internal Dielectric Interfaces in High-k Gate Stacks
author(s)	Gerald Lucovsky, James C. Phillips(North Carolina State University)
pages	pp. 17 - 18

9:30-9:50

title	Structural and Electrical Properties of Praseodymium Silicate Ultrathin Gate Dielectrics Grown by MOCVD
author(s)	Hirotsugu Fujita(Research Center for Quantum Effect Electronics, Tokyo Institute of Technology and Department of Electrical and Electronic Engineering, Musashi Institute of Technology), Yoshishige Tsuchiya(Research Center for Quantum Effect Electronics, Tokyo Institute of Technology), Hiroshi Mizuta(Department of Physical Electronics, Tokyo Institute of Technology), Hiroshi Nohira, Takeo Hattori(Department of Electrical and Electronic Engineering, Musashi Institute of Technology), Shunri Oda(Research Center for Quantum Effect Electronics and Department of Physical Electronics, Tokyo Institute of Technology)
pages	pp. 19 - 20

9:50-10:10

title	Physical and Electrical Properties of HfAlO_x Films Prepared by Atomic Layer Deposition Using NH₃/Ar Plasma
author(s)	Takaaki Kawahara, Kazuyoshi Torii, Hiroshi Ohji, Woosik Kim, Riichiro Mitsuhashi, Akiyoshi Muto, Hiroyuki Ito, Hiroshi Kitajima(Semiconductor Leading Edge Technologies, Inc.)
pages	pp. 21 - 22

10:10-10:30

title	Determination of Band Alignment of HfSiON/Si Structures Using Electron Spectroscopy
author(s)	Yuuichi Kamimuta, Masahiro Koike, Tsunehiro Ino, Masamichi Suzuki, Masato Koyama(Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation), Yoshitaka Tsunashima(Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation), Akira Nishiyama(Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation)
pages	pp. 23 - 24

Coffee Break (20min.)

Session 3 (10:50-12:00)
Chairpersons: K. Torii (Selete), D.L. Kwong (Univ. of Texas)

10:50-11:20

<+>

title	Charge Trapping in High-K Gate Stack and and Its Impact on MOSFET Lifetime
author(s)	D. L. Kwong(Univ. of Texas at Austin)
pages	pp. 25 - 26

11:20-11:40

title	Interfacial Layer-Induced Mobility Degradation in High-k Transistors
author(s)	Gennadi Bersuker, Peter M. Zeitzoff, J. Barnett(International SEMATECH), N. Moumen(IBM), S. Stemmer, M. Agustin(University of California Santa Barbara), B. Foran, C. D. Young(International SEMATECH), J. Peterson(Intel), P. Lysaght(International SEMATECH), B. H. Lee(IBM), G. A. Brown, H. R. Huff(International SEMATECH)
pages	pp. 27 - 28

11:40-12:00

title	Suppresion of the Transient Current of MOS Consisting of HfAlO_x as Gate Dielectrics Studied by Positron Annihilation
author(s)	A. Uedono, M. Goto, K. Higuchi(Institute of Applied Physics, University of Tsukuba), K. Shiraishi(Institute of Physics, University of Tsukuba), K. Yamabe(Institute of Applied Physics, University of Tsukuba), H. Kitajima, R. Mitsuhashi, A. Horiuchi, K. Torii, T. Arikado(Semiconductor Leading Edge Technologies, Inc.), R. Suzuki, T. Ohdaira(National Institute of Advanced Industrial Science and Technology), K. Yamada(Nano Technology Research Laboratory, Waseda University)
pages	pp. 29 - 30

Lunch Time (12:00-13:10)

Session 4 (13:10-15:40)
Chairpersons: H. Watanabe (Osaka Univ.), D. Muller (Cornell Univ.)

13:10-13:40

<+>

title	Imaging the Atomic-Scale Chemistry and Electronic Structure inside Nanodevices
author(s)	David A. Muller(Cornell University)
pages	pp. 31 - 32

13:40-14:00

title	Correlation between STM-Induced Spots and Fixed Positiove Charges in Thin HfO₂ Films
author(s)	Noriyuki Miyata, Hiroyuki Ota(MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST)), Masakazu Ichikawa(The University of Tokyo)
pages	pp. 33 - 34

14:00-14:20

title	Characterization of Interfacial Oxide Layers in Heterostructures of Hafnium Oxides Formed on NH₃-nitrided Si(100)
author(s)	Hiroshi Nakagawa, Akio Ohta, Fumito Takeno, Satoru Nagamachi, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki(Graduate School of Advanced Sciences of Matter, Hiroshima University)
pages	pp. 35 - 36

14:20-14:40

title	Rate-limiting Reaction of Growth and Decomposition of Very Thin Oxide on Si(001) Surface
author(s)	Syuichi Ogawa, Yuji Takakuwa(IMRAM, Tohoku Univ.)
pages	pp. 37 - 38

14:40-15:00

title	Growth Process and Energy Bandgap Formation of Silicon Nitride Films in Radical Nitridation Process
author(s)	Hiroki Kondo, Keigo Kawaai, Akira Sakai, Kayoko Miyazaki(Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University), Shigeaki Zaima(Center for Cooperative Research in Advanced Science & Technology, Nagoya University), Yukio Yasuda(Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University)
pages	pp. 39 - 40

15:00-15:20

title	The Effect of the Si/SiO₂ Interface on Boron Diffusion in SiO₂
author(s)	Shigeto Fukatsu, Kohei M. Itoh(Department of Applied Physics and Physico-Informatics and CREST-JST, Keio University ), Masashi Uematsu, Hiroyuki Kageshima, Yasuo Takahashi(NTT Basic Research Laboratories, NTT Corporation), Kenji Shiraishi(Institute of Physics, University of Tsukuba)
pages	pp. 41 - 42

15:20-15:40

title	Angle-Resolved X-ray Photoelectron Spectroscopy Studies on Compositional and Structural Transition Layers at SiO₂/Si Interfaces
author(s)	Hiroshi Nohira , Hideyuki Okamoto, Tetsushi Yoshida, Masatoshi Shioji(Musashi Institute of Technology), Kazufumi Azuma, Yukihiko Nakata(Advanced LCD Technolgies Development Center Co. Ltd.), Eiji Ikenaga, Keisuke Kobayashi(JASRI/SPring-8), Yasutaka Takata, Shigi Shin.(RIKEN/SPring-8), Takeo Hattori(Musashi Institute of Technology)
pages	pp. 43 - 44

Intermission (10min.)

15:50-17:50

Poster Session

18:00-19:30

Banquet

Friday May 28, 2004

Session 5 (9:00-10:30)
Chairpersons: K. Shiraishi (Univ. of Tsukuba), A. Pasquarello (IRRMA)

9:00-9:30

<+>

title	Atomic-Scale Modelling of the Si(100)-SiO₂ Interface: Dielectric Discontinuity
author(s)	Feliciano Giustino, Angelo Bongiorno, Alfredo Pasquarello(Institut de Theorie des Phenomenes Physisques(ITP),Ecole Polytechnique Federale de Lausanne(EPFL),Institut Romand de Recherche Numerique en Physique des Materiaux(IRRMA))
pages	pp. 45 - 46

9:30-9:50

title	First-principles Analyses of O₂ Molecules around Ultrathin SiO₂/Si(100) Interface
author(s)	Toru Akiyama(Department of Physics Engineering, Mie University), Hiroyuki Kageshima(NTT Basic Research Laboratories, NTT Corporation), Tomonori Ito(Department of Physics Engineering, Mie University)
pages	pp. 47 - 48

9:50-10:10

title	Theoretical Study of Excess Si Emitted from Si-Oxide/Si Interfaces
author(s)	Hiroyuki Kageshima(NTT Basic Research Labs., NTT Corp. ), Masashi Uematsu(NTT Basic Research Labs., NTT Corp.), Kazuto Akagi(Faculty of Science, Univ. of Tokyo), Shinji Tsuneyuki(Faculty of Scince, Univ. of Tokyo), Toru Akiyama(Dept. of Physics Engineering, Mie Univ.), Kenji Shiraishi(Faculty of Physics, Univ. of Tsukuba)
pages	pp. 49 - 50

10:10-10:30

title	Residual Order within Thermally Grown SiO₂ on Si(113) Substrate
author(s)	Kosuke Tatsumura, Takanobu Watanabe, Iwao Ohdomari(School of Science and Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169-8555, Japan), Toyohiro Chikyow(National Institute for Material Science, Sengen 1-2-1 Tsukuba-shi, Ibaraki 305-0047, Japan), Takayoshi Shimura(Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita-shi, Osaka 565-0871, Japan), Masataka Umeno(Department of Management Science, Faculty of Engineering, Fukui University of Technology, 3-6-1 Gakuen, Fukui-shi, Fukui 910-8505, Japan)
pages	pp. 51 - 52

Coffee Break (20min.)

Session 6 (10:50-12:00)
Chairpersons: E. Tokumitsu (Tokyo Inst. Tech.), S. Streiffer (Argone National Lab.)

10:50-11:20

<+>

title	Beyond High-K: Ferroelectric Ultrathin Films and Nanostructures
author(s)	S. Streiffer, G.B. Stephenson, D.D. Fong, J.A. Eastman(Materials Science Division, Argonne National Laboratory, USA), Carol Thompson(Dept. of Physics, Northern Illinois University, Materials Science Division, Argonne National Laboratory, USA), M. Zurbuchen(Materials Science Division, Argonne National Laboratory, USA), M. Biegalski(Dept. of Materials Science & Eng., Penn State University), O. Auciello, P.H. Fuoss(Materials Science Division, Argonne National Laboratory, USA), D. M. Kim, K. J. Choi, C. B. Eom(Dept. of Materials Science & Eng., University of Wisconsin-Madison)
pages	pp. 53 - 54

11:20-11:40

title	Ferroelectric Memory FET with Pt/SrBi₂Ta₂O₉/Hf-Al-O/Si Gate Structure
author(s)	Shigeki Sakai, Rajangam Ilangovan, Mitsue Takahashi(National Institute of Advanced Industrial Science and Technology)
pages	pp. 55 - 56

11:40-12:00

title	Electrical Characteristics of Ferroelectric-Gate Thin Film Transistors using ITO Channel
author(s)	Masaru Senoo, Takaaki Miyasako, Eisuke Tokumitsu(Precision and Intelligence Laboratory, Tokyo Institute of Technology)
pages	pp. 57 - 58

Lunch (12:00-13:10)

Session 7 (13:10-14:50)
Chairpersons: K. Okada (Matsushita Elec.), J. H. Stathis (IBM)

13:10-13:40

<+>

title	Reliability Concerns of Ultra-thin Gate Dielectrics
author(s)	Hideki Satake, Takeshi Yamaguchi, Izumi Hirano, Masato Koyama(Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation)
pages	pp. 59 - 60

13:40-14:10

<+>

title	Ultra Thin Oxide Reliability in CMOS Devices and Circuits
author(s)	J. H. Stathis(IBM, USA)
pages	pp. 61 - 62

14:10-14:30

title	Effect of Soft Breakdown in Ultrathin Gate Oxides on CMOS Logic Circuit
author(s)	Takuji Hosoi, Shuichi Morikawa, Yoshinari Kamakura, Kenji Taniguchi(Dept. of Electronics & Information Systems, Graduate School of Engineering, Osaka University)
pages	pp. 63 - 64

14:30-14:50

title	Analysis of Breakdown Phenomena in Stressed Gate SiO₂ Films by Conductive Atomic Force Microscopy
author(s)	Akiyoshi Seko(Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University), Yukihiko Watanabe(Toyota Central R&D Labs., Inc), Hiroki Kondo, Akira Sakai(Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University), Shigeaki Zaima(Center for Cooperative Research in Advanced Science & Technology, Nagoya University), Yukio Yasuda(Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University)
pages	pp. 65 - 66

14:50-15:00

Closing Remarks

Papers (in the Poster Session)

Date/Time:Thursday May 27, 2004/15:50-17:50

[Ultrathin silicon dioxide, oxynitride and oxide-nitride composite dielectrics]

title	Enhancement of Si Self-Diffusion by the Existence of B in SiO₂
author(s)	Masashi Uematsu, Hiroyuki Kageshima, Yasuo Takahashi(NTT Basic Research Laboratories), Shigeto Fukatsu, Kohei M. Itoh(Keio University), Kenji Shiraishi(University of Tsukuba)
pages	pp. 67 - 68

title	Formation of Silicon Oxynitride Films with Low-Leakage Current by Nitrogen Plasma near Atmospheric Pressure
author(s)	Ryoma Hayakawa, Norifumi Fujimura(Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University), Hiroya Kitahata, Motokazu Yuasa(Sekisui Chemical Co., LTD)
pages	pp. 69 - 70

title	Observation of Thermal Oxidation at Si(001) Surface by Time-Resolved Photoemission Spectroscopy in the Langmuir-type Adsorption Mode
author(s)	Akitaka Yoshigoe, Kousuke Moritani(Japan Atomic Energy Research Institute), Syunsuke Hachiue(Kobe university), Yuden Teraoka(Japan Atomic Energy Research Institute)
pages	pp. 71 - 72

title	Rapid and Uniform SiO₂ Film Growth on Large-sized Si Wafer Using 100%-O₃ Gas
author(s)	Tetsuya Nishiguchi(AIST, meidensha corporation), Yosuke Sato, Hidehiko Nonaka, Shingo Ichimura(AIST), Yoshimasa Nihei(Tokyo University of Science), Tsuyoshi Noyori, Yoshiki Morikawa, Mitsuru Kekura(Meidensha Corporation)
pages	pp. 73 - 74

title	Initial Stage of Defect Formation Process at Si/SiO₂ Interface Detected by in-situ UHV-ESR
author(s)	Wataru Futako, Norikazu Mizuochi, Satoshi Yamasaki(Diamond Research Center AIST)
pages	pp. 75 - 76

title	Tunneling Current through Ultrathin Silicon Dioxide Films under Light Exposure
author(s)	Satoru Morita, Akihito Shinozaki, Yuuki Morita, Kazuo Nishimura, Tatsuya Okazaki, Shinichi Urabe, Mizuho Morita(Department of Precision Science and Technology, Graduate School of Engineering, Osaka University)
pages	pp. 77 - 78

title	Nonuniformity in Ultrathin SiO₂ on Si(111) Characterized by AFM
author(s)	Ryu Hasunuma, Junichi Okamoto, Norio Tokuda, Kikuo Yamabe(Institute of Applied Physics, University of Tsukuba)
pages	pp. 79 - 80

title	Dielectric Leakage Reduction and Improvement of MOSFET Characteristics by Optimizing Anneal Process in Ultra-thin SiON Film
author(s)	Masashi Takahashi, Hiroji Ozaki, Hitoshi Takada, Yasuyuki Tamura, Takaoki Sasaki, Hidemi Amai, Fumio Ootsuka, Mitsuo Yasuhira, Tsunetoshi Arikado(Semiconductor Leading Edge Technologies, Inc. / Research Dept.1)
pages	pp. 81 - 82

[High-k gate dielectrics]

title	Interface Reaction of Poly-Si/high- k Insulator Systems Studied by Hard X-Ray Photoemission Spectroscopy
author(s)	Eiji Ikenaga, I. Hirosawa(JASRI/SPring-8), Y. Takata, A. Chainani(RIKEN/Spring-8), H.Kitajima, A.Muto, T.Maeda, K.Torii(Semiconductor Leading Edge Technologies, Inc.), K. Tamasaku, Y. Nishino, T. Ishikawa, S. Shin(RIKEN/Spring-8), S. Komiya, K. Kobayashi(JASRI/SPring-8)
pages	pp. 83 - 84

title	Effect of Nitrogen on Electrical and Physical Properties of HfSi_xO_y gate dielectrics
author(s)	Prakaipetch Punchaipetch, Takeshi Okamoto, Hideki Nakamura, Yukiharu Uraoka, Takashi Fuyuki(Graduate School of Materials Science, Nara Institute of Science and Technology), Sadayoshi Horii(Semiconductor Equipment System Laboratory, Hitachi Kokusai Electric Inc.,)
pages	pp. 85 - 86

title	Characterisation of Ultra-thin Dielectric Layers Using XPS and ARXPS
author(s)	P. Mack, B. McIntosh, R. G. White, J. Wolstenholme(Thermo Electron Corporation)
pages	pp. 87 - 88

title	Electrical and Thickness Homogeneity of ZrO₂ and HfO₂ Films Studied by Ultra-High Vacuum Conducting Atomic-Force Microscopy
author(s)	Sascha Kremmer, Harald Wurmbauer, Christain Teichert(Institute of Physics, University of Leoben), Grazia Tallarida(Laboratorio MDM - INFM)
pages	pp. 89 - 90

title	HfO₂ Dielectric Film Formation Combined with Radical Nitridation
author(s)	Mitsuo Sakashita, Ryoya Takahashi, Akira Sakai, Shigeaki Zaima, Yukio Yasuda(Nagoya University)
pages	pp. 91 - 92

title	Transient Capacitance in MOS with Gate Stack Dielectrics
author(s)	Masakazu Goto, Keiichi Higuchi(Inst. of Appl.Phys., Univ. of Tsukuba), Kazuyoshi Torii(Semiconductor Leading Edge Technologies Inc.), Kikuo Yamabe(Inst. of Appl.Phys., Univ. of Tsukuba and Tsukuba research Center of Interdisciplinary Materials Science, Univ. of Tsukuba)
pages	pp. 93 - 94

title	Effects of Interlayer and Annealing on Band Diagrams of HfO₂ Gate Insulators Studied by Photoemission Spectroscopy
author(s)	Satoshi Toyoda, Jun Okabayashi, H. Kumigashira, M. Oshima(Department of Applied Chemistry, The University of Tokyo), M. Niwa, K Usuda, G. L. Liu(Semiconductor Technology Academic Research Center)
pages	pp. 95 - 96

title	Impact of Rapid Thermal O₂-Anneal on Dielectric Stack Structures of Hafnium Aluminate and Silicon Dioxide Formed on Si(100)
author(s)	A. Ohta, S. Miyazaki, H. Murakami(Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University), T. Kawahara, K. Torii(Semiconductor Leading Edge Technologies, Inc.)
pages	pp. 97 - 98

[Ferroelectric and high-k films for memory applications]

title	Effect of Silicon Addition on the Electrical Properties of SrBi₂Ta₂O₉ Thin Films
author(s)	Susumu Tamura , Yasuhisa Omura (Kansai University/High-Technology Research Center and Faculty of Engineering)
pages	pp. 99 - 100

title	Solid Phase Epitaxial Growth of SrTiO₃ Thin Films on Si(001)Substrates at Low Temperature
author(s)	M. N. K. Bhuiyan, H. Kimura, T. Tambo, C. Tatsuyama(Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama University)
pages	pp. 101 - 102

[Growth and processing of gate dielectrics]

title	Xe-Lamp-Induced UV Light Irradiation Effects on SiO₂ Film Growth during Dry Oxidation
author(s)	Koichiro Tatsumi, Norio Imou, Susumu Tamura, Yasuhisa Omura(High-Technology Research Center, Kansai University)
pages	pp. 103 - 104

title	Structure of Ultrathin Epitaxial CeO₂ Films Grown on Si(111)
author(s)	Sinji Joumori, Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura(Department of Engineering Physics and Mechanics, Kyoto University), Yukie Nishikawa, Daisuke Matsushita, Takeshi Yamaguchi(Advanced LSI Technology Laboratory, Toshiba Corporation), Nobutaka Satou(Toshiba Nanoanalysis Corporation)
pages	pp. 105 - 106

[Gate dielectric wearout and reliability]

title	Thickness Dependence of Microscopic Current-Voltage Characteristics in Stressed SiO₂ Films
author(s)	Yukihiko Watanabe(Toyota Central R&D Labs., Inc), Akiyoshi Seko, Hiroki Kondo, Akira Sakai(Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University), Shigeaki Zaima(Center for Cooperative Research in Advanced Science and Technology, Nagoya University), Yukio Yasuda(Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University)
pages	pp. 107 - 108

[Characterization and control of gate dielectric/Si interface]

title	Oxidation Process Dependence of Strain Fields underneath SiO₂/Si(001) interfaces
author(s)	Wataru Yashiro(Nanomaterials Laboratory (NML), National Research Institute for Materials Science (NIMS) and Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST)), Kazushi Sumitani, Toshio Takahashi(The Institute for Solid State Physics, The University of Tokyo), Yoshitaka Yoda(Japan Synchrotoron Radiation Research Institute (JASRI)), Kensuke Takahashi, Takeo Hattori(Department of Electrical and Electronic Engineering, Musashi Institute of Technology), Kazushi Miki(Nanomaterials Laboratory (NML), National Research Institute for Materials Science (NIMS) and Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST))
pages	pp. 109 - 110

title	Effect of Post-Deposition Annealing of Composition and Chemical Structures of La₂O ₃ film/Si(100) Interfacial Transition Layers
author(s)	Tetsushi Yoshida, Takayoshi Shiraishi, Hiroshi Nohira(Musashi Inst. of Tech.), Shun-ichiro Ohmi(Tokyo Inst. of Tech. IGSSE), Youichi Kobayashi, Ng Jin Aun, Hiroshi Iwai(Tokyo Inst. of Tech. FCRC), Wataru Sakai, Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura(Kyoto Univ. ), Takeo Hattori(Musashi Inst. of Tech.)
pages	pp. 111 - 112

title	Angle-resolved XPS Studies on Al₂O₃/SiON Interface Reaction
author(s)	Tetsushi Yoshida, Seiji Shinagawa, Hiroshi Nohira(Musashi Institute of Technology), Shin-ichi Saito(Central Research Laboratory, Hitachi, Ltd.), Masahiko Hiratani(Advanced Research Laboratory, Hitachi, Ltd.), Takeo Hattori(Musashi Institute of Technology)
pages	pp. 113 - 114

title	Structure Change of Y₂O₃ and La₂O₃ Films by Heat Treatment
author(s)	Takashi Yamamoto, Yukiko Izumi, Hideki Hashimoto(Toray Research Center Inc. ), Masanori Oosawa(NIPPON SANSO CORPORATION ), Yoshihiro Sugita(Fujitsu Laboratories Ltd.)
pages	pp. 115 - 116

title	Thermal Stability of Yttrium-Aluminate Alloy Film for Future Gate Dielectric
author(s)	Yukiko Izumi, Takashi Yamamoto, Takashi Miyamoto, Kazuyuki Okada, Naoyuki Sugiyama, Hideki Hashimoto(Toray Research Center, Inc.), Minoru Inoue, Masanori Oosawa(NIPPON SANSO CORPORATION), Yoshihiro Sugita(Fujitsu Laboratories Ltd.)
pages	pp. 117 - 118

[Theoretical approaches for gate dielectric/Si structure]

title	First-Principle Study on Nitridation of Silicon Dioxide and Electronic Properties of Silicon Oxynitride Thin Film
author(s)	Hiroki Uehara, Kentaro Doi, Koichi Nakamura, Akitomo Tachibana(Department of Engineering Physics and Mechanics, Kyoto University)
pages	pp. 119 - 120