| Title | Analysis of the Radiation Noise and Efficiency Characteristics in a Quasi-resonant Converter |
| Author | *Hironobu Shiroyama (Fuji Electric Device Technology Co., Ltd., Japan), Hirofumi Matsuo, Yoichi Ishizuka (Graduate School of Science and Technology, Nagasaki University, Japan) |
| Page | pp. 1001 - 1004 |
| Keyword | quasi-resonant converter, zero voltage switching, efficiency, radiation noise |
| Abstract | In this paper, the radiation noise and efficiency of the quasi-resonant converter are analyzed. A quasi-resonant converter using the flyback topology can realize the soft switching with simpler circuit. The performance characteristics such as the efficiency and radiation noise are analyzed on the quasi-resonant converter with the ZVS and the non-ZVS. As a result, it is clarified that the low radiation noise and high power efficiency are achieved with the non-ZVS. |
| Title | Voltage Reference Circuitry Operating in Weak Inversion Region with Reduced Fluctuations of Supply Voltage and Ambient Temperature for LTPS TFT |
| Author | *Yoshikazu Ishii, Yasoji Suzuki, Takafumi Satoh (Tokai University, Japan), Shigeki Imai (SHARP Corporation, Japan) |
| Page | pp. 1005 - 1008 |
| Keyword | voltage reference circuit, LTPS TFT, kink effects |
| Abstract | In this paper, a modified voltage reference circuitry using LTPS TFT is proposed. The new modified voltage reference circuitry is unaffected by fluctuations of the power supply voltage and the ambient temperature due to the utilization of enhancement-depletion (E-D) reference circuit and the operation in the weak inversion region for generation of a stable reference voltage. To verify the performance of the new modified circuitry, the circuit simulation is carried out by using SPICE. As a result of the simulation, the supply voltage dependability (SVD) and the temperature coefficient (TC) achieves to values of 0.08967 [%/V] and 0.00203[%/°C], respectively, when the ambient temperature (Ta) is +25 °C and the supply voltage (VDD) is +8V. In brief, these characterisitcs of the new modified circuitry are improved comparing with that of the conventional circuit. |
| Title | An Emission Control Driver Using P-type TFTs for AMOLED Displays |
| Author | *Bo-Yong Chung, Oh-Kyong Kwon (Hanyang University, Republic of Korea), Yojiro Matsueda, Hye-Dong Kim (Samsung SDI Co., Ltd., Republic of Korea) |
| Page | pp. 1009 - 1012 |
| Keyword | P-TFT, AMOLED, emission control driver, low power consumption, motion blur |
| Abstract | We designed an emission control driver using P-type TFTs to adjust the light emission period of an active matrix organic light emitting diode (AMOLED) displays. The P-TFT emission control driver has achieved rail-to-rail driving and low power consumption. Using this circuit, we can control peak brightness dynamically to reduce panel power consumption and motion blur. We developed 4.3 inch WQVGA AMOLED panel with the integrated proposed circuit. The output rising and falling times of P-TFT emission control driver measured on panel are 300 ns and 1.2 μs, respectively. The power consumption of the emission control driver with 272 stages is 0.2 W according to the measurement data. |