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| Wednesday, June 8, 2016 |
| Title | (Keynote) SiGe: Past, Present, and Future |
| Author | *Ya-Hong Xie (Univ. of California, Los Angeles, U.S.A.) |
| Page | p. 1 |
| Title | (Keynote) High Mobility Oxide Semiconductors Hosting Unusual Quantum-, Anomalous- and Topological-Hall Effects |
| Author | *Masashi Kawasaki (Univ. of Tokyo, Japan) |
| Page | pp. 2 - 3 |
| Title | (Invited Paper) Ge1-xSnx and SiyGe1-x-ySnx Epitaxy on a Commercial CVD Reactor |
| Author | Joe Margetis (ASM, U.S.A.), Aboozar Mosleh, Seyed Amir Ghetmiri (Univ. of Arkansas, U.S.A.), Nupur Bhargava (ASM, U.S.A.), Shui-Qing Yu (Univ. of Arkansas, U.S.A.), Harald Profijt, David Kohen (ASM, Belgium), Roger Loo (imec, Belgium), Anurag Vohra (K.U. Leuven, Belgium), *John Tolle (ASM, U.S.A.) |
| Page | pp. 4 - 5 |
| Title | (Invited Paper) 90nm and 130nm SiGe BiCMOS Technologies Featuring Modular NPNs for mm-Wave and High-Performance Analog Applications |
| Author | *R.A. Camillo-Castillo, J. J. Pekarik, V. Jain, Q. Liu, A. Divergilio, J. Adkisson, B. Zetterlund, X. Tian, A. Vallett, J. Ellis-Monaghan, Z. He, J. Lukaitis, K. Newton, N. Cahoon, M. Kerbaugh, D. Harame (GLOBALFOUNDRIES, U.S.A.) |
| Page | pp. 6 - 7 |
| Title | Characterization of Local Strain in Nanoscale Strained SiGe FinFET Structures |
| Author | *Shogo Mochizuki, Conal E. Murray (IBM Research, U.S.A.), Anita Madan, Teresa Pinto, Yun Yu Wang (IBM, U.S.A.), Juntao Li (IBM Research, U.S.A.), Weihao Weng (IBM, U.S.A.), Hemanth Jagannathan (IBM Research, U.S.A.), Yasuhiko Imai, Shigeru Kimura (Japan Synchrotron Radiation Research Institute, Japan), Shotaro Takeuchi, Akira Sakai (Osaka Univ., Japan) |
| Page | pp. 8 - 9 |
| Title | Design of Metals for Fermi-level Pinning Modulation at Ge/Metal Interfaces |
| Author | *Tomonori Nishimura, Takeaki Yajima, Akira Toriumi (Univ. of Tokyo, Japan) |
| Page | pp. 10 - 11 |
| Title | Control of the Fermi Level Pinning Position at Metal/Ge Interface by Using Ge1−xSnx Interlayer |
| Author | *Akihiro Suzuki, Osamu Nakatsuka, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ., Japan) |
| Page | pp. 12 - 13 |
| Title | (Invited Paper) SiGe Metallization Challenges and Developments in Context of FD-SOI and CoolcubeTM Integrations |
| Author | *F. Nemouchi (CEA-LETI, France), E. Bourjot (STMicroelectronics, France), F. Deprat, Ph. Rodriguez (CEA-LETI, France), M. Gregoire (STMicroelectronics, France), D. Mangelinck (Aix Marseille Univ., France), P. Gergaud (CEA-LETI, France), S. Favier (STMicroelectronics, France), J. M. Hartman, V. Loup (CEA-LETI, France), S. Joblot (STMicroelectronics, France), P. Batude, C. Fenouillet, M. Vinet (CEA-LETI, France) |
| Page | pp. 241 - 245 |
| Title | Control of Electrical Properties in Heusler-Alloy/Ge Schottky Tunnel Contacts formed by Phosphorous δ-Doping with Si-Layer Insertion |
| Author | *Michihiro Yamada, Yuichi Fujita, Shinya Yamada (Osaka Univ., Japan), Kentarou Sawano (Tokyo City Univ., Japan), Kohei Hamaya (Osaka Univ., Japan) |
| Page | pp. 14 - 15 |
| Title | Ionization and Diffusion of Metal Atoms under Electric Field at Metal/Insulator Interfaces; First-principles Study |
| Author | *Yoshihiro Asayama, Masaaki Hiyama, Takashi Nakayama (Chiba Univ., Japan) |
| Page | pp. 16 - 17 |
| Title | Thermal Stability of Compressively Strained Si/Relaxed Si1-xCx Heterostructures Formed on Ar Ion Implanted Si (100) Substrates |
| Author | *You Arisawa (Nagoya Univ., Japan), Yusuke Hoshi (Univ. of Tokyo, Japan), Kentarou Sawano (Tokyo City Univ., Japan), Junji Yamanaka, Keisuke Arimoto, Chiaya Yamamoto (Univ. of Yamanashi, Japan), Noritaka Usami (Nagoya Univ., Japan) |
| Page | pp. 18 - 19 |
| Title | Formation of Strained Ge-on-Insulator (GOI) Substrates using SiGe Etching Stop Layers |
| Author | Yuuki Yajima, Yuta Ariyama, *Kentarou Sawano (Tokyo City Univ., Japan) |
| Page | pp. 20 - 21 |
| Title | Stress Stimulation Effect on Au Induced Lateral Crystallization for Amorphous Ge on Insulating Substrate |
| Author | *Kazuki Kudo, Kinta Kusano, Taisei Sakaguchi, Takatsugu Sakai (National Inst. of Tech., Kumamoto College, Japan), Shinichi Motoyama, Yutaka Kusuda, Masahiro Furuta (SAMCO, Japan), Nobuyuki Naka, Tomoko Numata (HORIBA, Japan), Kenichiro Takakura, Isao Tsunoda (National Inst. of Tech., Kumamoto College, Japan) |
| Page | pp. 22 - 23 |
| Title | (Invited Paper) Strain Engineering in Highly Mismatched SiGe/Si Heterostructures |
| Author | *Fabio Isa, Arik Jung (ETH Zürich/Empa, Switzerland), Marco Savalaglio (Univ. di Milano-Bicocca, Italy), Yadira Arroyo Rojas Dasilva (Empa, Switzerland), Ivan Marozau (CSEM, Switzerland), Mojmir Meduna (Masaryk Univ., Czech Republic), Michael Barget, Anna Marzegalli (Univ. di Milano-Bicocca, Italy), Giovanni Isella (Politecnico di Milano, Italy), Rolf Erni (Empa, Switzerland), Fabio Pezzoli, Emiliano Bonera (Univ. di Milano-Bicocca, Italy), Philippe Niedermann, Olha Sereda (CSEM, Switzerland), Pierangelo Groning (Empa, Switzerland), Francesco Montalenti (Univ. di Milano-Bicocca, Italy), Hans von Kanel (ETH Zürich/Empa, Switzerland) |
| Page | pp. 24 - 25 |
| Title | Low-Temperature Formation of Ge Quantum Dots on Si(100) via Solid-Phase Epitaxy Using Carbon mediation |
| Author | *Yuhki Itoh, Kaito Takeshima, Tomoyuki Kawashima, Katsuyoshi Washio (Tohoku Univ., Japan) |
| Page | pp. 26 - 27 |
| Title | Impact of Phosphorus Doping to Multiply-Stacking Si Quantum Dots on Electron Emission Properties |
| Author | *Daichi Takeuchi, Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda, Seiichi Miyazaki (Nagoya Univ., Japan) |
| Page | pp. 28 - 29 |
| Title | Electron Transport Properties of High Density FePt-NDs Stacked Structures |
| Author | *Taiga Kawase, Yusuke Mitsuyuki, Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda, Seiichi Miyazaki (Nagoya Univ., Japan) |
| Page | pp. 30 - 31 |
| Title | (Invited Paper) Diamond JFET for Next Generation Low-Loss Power Electronic |
| Author | *Takayuki Iwasaki, Mutsuko Hatano (Tokyo Inst. of Tech., Japan) |
| Page | pp. 32 - 33 |
| Title | Displacement Current of Au/p-type Diamond Schottky Contacts |
| Author | *Toshichika Aoki (Univ. of Fukui, Japan), Tokuyuki Teraji, Yasuo Koide (NIMS, Japan), Kenji Shiojima (Univ. of Fukui, Japan) |
| Page | pp. 34 - 35 |
| Title | Ultrapure Diamond Growth by Microwave Plasma-Assisted Chemical Vapor Deposition |
| Author | *Tokuyuki Teraji (NIMS, Japan) |
| Page | pp. 36 - 37 |
| Title | (Invited Paper) Quantum Sensing with Isotopically Purified 12C Diamond |
| Author | *Kohei M. Itoh, Kento Sasaki (Keio Univ., Japan), H. Watanabe (AIST, Japan), Eisuke Abe (Keio Univ., Japan) |
| Page | p. 38 |
| Title | Synthesis of Si-Based Nanosheets by Extraction of Ca Atoms from CaSi2 by Chelating Agents |
| Author | *Yuki Kumazawa, Kenta Sasaki, Peiling Yuan, Xiang Meng, Masaru Shimomura, Hirokazu Tatsuoka (Shizuoka Univ., Japan) |
| Page | pp. 39 - 40 |
| Title | Fabrication of Tapered Si Nanowire Arrays and Their Field Emission Properties |
| Author | S. C. Yang, Z. Feng, C. F. Chuang, *S. L. Cheng (National Central Univ., Taiwan) |
| Page | pp. 41 - 42 |
| Title | Interaction Influence of S/D GeSi Lattice Mismatch and Stress Gradient of CESL on Nano-Scaled Strained NMOSFETs |
| Author | Chang-Chun Lee, *Pei-Chen Huang (Chung Yuan Christian Univ., Taiwan), Yen-Ting Kuo, Dian-Yong Li, Chuan-Hsi Liu (National Taiwan Normal Univ., Taiwan) |
| Page | pp. 43 - 44 |
| Title | Study of Schottky Barrier Heights on GeSn with High Sn-Contents |
| Author | Christian Schulte-Braucks, Emily Hofmann, Stefan Glass, Daniela Stange, Nils von den Driesch (Forschungszentrum Jülich, Germany), Jean-Michel Hartmann (CEA Leti, France), Zoran Ikonic (Univ. of Leeds, U.K.), Siegfried Mantl, Qing-Tai Zhao, *Dan Buca (Forschungszentrum Jülich, Germany) |
| Page | pp. 45 - 46 |
| Title | Systematic Study on Precisely Controlled SiGe Quantum Nanostructures at Si Nano-pillar Periphery |
| Author | *Shuguang Wang (Fudan Univ., China), Tong Zhou (Shandong Univ. of Tech., China), Zhenyang Zhong (Fudan Univ., China) |
| Page | pp. 47 - 48 |
| Title | Control of Metallic Source/Drain in Nanowire Transistors Using Low-Temperature Microwave Annealing |
| Author | Chun-Hsing Shih, Ming-Kun Huang, *Jr-Jie Tsai, Yu-Hsuan Chen (National Chi Nan Univ., Taiwan), Wen-Fa Wu (National Nano Device Laboratories, Taiwan) |
| Page | pp. 49 - 50 |
| Title | InAlP/InGaP Red LED on 200 mm 6° Offcut Germanium-on-Insulator Substrate |
| Author | *Shuyu Bao (Nanyang Technological Univ., Singapore), Kwang Hong Lee (Singapore-MIT Alliance for Research and Technology (SMART), Singapore), Cong Wang (Nanyang Technological Univ., Singapore), Bing Wang, Riko I Made (Singapore-MIT Alliance for Research and Technology (SMART), Singapore), Soon Fatt Yoon (Nanyang Technological Univ., Singapore), Jurgen Michel, Eugene Fitzgerald (Singapore-MIT Alliance for Research and Technology (SMART), U.S.A.), Chuan Seng Tan (Nanyang Technological Univ., Singapore) |
| Page | pp. 51 - 52 |
| Title | Room-Temperature Electrical Spin Injection and Detection in n-Ge through Co2FeSi0.5Al0.5/n+-Ge Schottky Tunnel Contacts |
| Author | *Yuichi Fujita, Michihiro Yamada, Shinya Yamada (Osaka Univ., Japan), Kentarou Sawano (Tokyo City Univ., Japan), Takeshi Kanashima, Kohei Hamaya (Osaka Univ., Japan) |
| Page | pp. 53 - 54 |
| Title | Effect of Crystallinity of As-Deposited Ge Film on Quantum Dot Formation in Carbon-Mediated Solid-Phase Epitaxy |
| Author | *Kaito Takeshima, Yuhki Itoh, Tomoyuki Kawashima, Katsuyoshi Washio (Tohoku Univ., Japan) |
| Page | pp. 55 - 56 |
| Title | Transition of Ge Quantum Dot Growth Mode by Using C-Mediated Si(100) Surface Management |
| Author | *Kosuke Yasuta, Yuhki Satoh, Yuhki Itoh, Tomoyuki Kawashima, Katsuyoshi Washio (Tohoku Univ., Japan) |
| Page | pp. 57 - 58 |
| Title | Germanium Based Ultra Shallow Junction Formation By Microwave Annealing |
| Author | *Jinbiao Liu, Junfeng Li, Jun Luo, Guilei Wang, Chao Zhao (IMECAS, China) |
| Page | pp. 59 - 60 |
| Title | Interfacial Energy Control for Low-Temperature Crystallization of Ge-rich GeSn Layers on Insulating Substrate |
| Author | *Isao Yoshikawa (Nagoya Univ., Japan), Masashi Kurosawa (Nagoya Univ., PRESTO, Japan), Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ., Japan) |
| Page | pp. 61 - 62 |
| Title | In-Situ B Doping Control in Si Film Deposition Using ECR Ar Plasma CVD without Substrate Heating |
| Author | Koya Motegi, *Masao Sakuraba, Hisanao Akima, Shigeo Sato (Tohoku Univ., Japan) |
| Page | pp. 63 - 64 |
| Title | Comprehensive Effects of Strained Ge1-xSnx and Device Layout Arrangement on a Nano-Scaled Ge-based PMOSFET with a Short Channel |
| Author | *Chang-Chun Lee (Chung Yuan Christian Univ., Taiwan), Tsung-Chieh Cheng (National Kaohsiung Univ. of Applied Sciences, Taiwan), Pei-Chen Huang (Chung Yuan Christian Univ., Taiwan) |
| Page | pp. 65 - 66 |
| Title | Electronic Properties of Si/Si-Ge Alloy/Si(100) Heterostructures Formed by ECR Ar Plasma CVD without Substrate Heating |
| Author | *Naofumi Ueno, Masao Sakuraba, Hisanao Akima, Shigeo Sato (Tohoku Univ., Japan) |
| Page | pp. 67 - 68 |
| Title | Photoluminescence of Phosphorous Doped Ge on Si (100) |
| Author | *Yuji Yamamoto (IHP, Germany), Giovanni Capellini (Univ. degli Studi Roma Tre, Germany), Noriyuki Taoka (IHP, Germany), Michele Montanari (Univ. degli Studi Roma Tre, Italy), Peter Zaumseil, Anne Hesse (IHP, Germany), Thomas Schroeder (IHP and BTU Cottbus, Germany), Bernd Tillack (Tech. Univ. Berlin, Germany) |
| Page | pp. 69 - 70 |
| Title | Technique for Selective Doping of Ge-Based Structures by Segregating Impurities in MBE |
| Author | Dmitry V. Yurasov, Alexander V. Antonov, Mikhail N. Drozdov, Vladislav B. Schmagin, Kirill E. Spirin, *Alexey V. Novikov (Russian Academy of Sciences, Russian Federation) |
| Page | pp. 71 - 72 |
| Title | Mobility Enhancement in Ge p-MOSFET due to Introduction of Al Atoms in SiO2/GeO2 Gate Stacks |
| Author | *Yuta Nagatomi, Shintaro Tanaka, Tomoki Tateyama, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima (Kyushu Univ., Japan) |
| Page | pp. 73 - 74 |
| Title | Formation and Characterization of GeSiSn/GeSn/GeSiSn Double-Heterostructure with Strain-controlled GeSiSn layer |
| Author | *Masahiro Fukuda, Takashi Yamaha, Takanori Asano, Syunsuke Fujinami, Yosuke Shimura, Masashi Kurosawa, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ., Japan) |
| Page | pp. 75 - 76 |
| Title | Epitaxial Growth of Ge Thin Film on Si (001) by DC Magnetron Sputtering |
| Author | *Shintaro Otsuka, Takahiro Mori, Yukinori Morita, Noriyuki Uchida, Yongxun Liu, Shin-ichi O’uchi, Hiroshi Fuketa, Shinji Migita, Meishoku Masahara, Takashi Matsukawa (AIST, Japan) |
| Page | pp. 77 - 78 |
| Title | High Accuracy Non-Contact Si Substrate Temperature Measurement Using Optical Low-Coherence Interferometry for Controlling Plasma Processes |
| Author | *Katsuhiro Hattori, Takayuki Ohta (Meijo Univ., Japan), Akinori Oda (Chiba Inst. of Tech., Japan), Hiroyuki Kousaka (Nagoya Univ., Japan) |
| Page | pp. 79 - 80 |
| Thursday, June 9, 2016 |
| Title | (Special Lecture) Lighting the Earth by LEDs |
| Author | *Hiroshi Amano (Nagoya Univ., Japan) |
| Page | p. 81 |
| Title | (Invited Paper) High-Mobility High-Ge-Content SiGe PMOS FinFETs with Scaled EOT and Fin Dimensions for High-Performance Logic Applications |
| Author | *Takashi Ando, Pouya Hashemi (IBM, U.S.A.) |
| Page | pp. 82 - 83 |
| Title | (Invited Paper) Fully Coherent Ge Islands Growth on Nano-Pillar by Selective Epitaxy |
| Author | *Yuji Yamamoto, Peter Zaumseil, Marcus Andreas Schubert (IHP, Germany), Giovanni Capellini (Univ. degli Studi Roma Tre, Germany), Thomas Schroeder (IHP and BTU Cottbus, Germany), Bernd Tillack (Tech. Univ. Berlin, Germany) |
| Page | pp. 84 - 85 |
| Title | Use of High Order Precursors for Manufacturing Gate All Around Devices |
| Author | *Andriy Hikavyy, Hans Mertens, Liesbeth Witters, Roger Loo, Naoto Horiguchi (IMEC, Belgium) |
| Page | pp. 86 - 87 |
| Title | Very Low Temperature Epitaxy of Ge and Ge Rich SiGe Alloy With Ge2H6 in a Reduced Pressure – Chemical Vapor Deposition Tool |
| Author | *Joris Aubin, Jean-Michel Hartmann (CEA-LETI, Grenoble, France), Jean-Baptiste Pin, Steve Moffatt (Applied Materials, U.S.A.) |
| Page | pp. 88 - 89 |
| Title | Si1-xGex Bulk Single Crystals for Substrates of Electronic Devices |
| Author | *Kyoichi Kinoshita, Yasutomo Arai (JAXA, Japan), Tatsuro Maeda (AIST, Japan), Osamu Nakatsuka (Nagoya Univ., Japan) |
| Page | pp. 90 - 91 |
| Title | Selective Growth of Fully Relaxed GeSn Nano Islands on Patterned Si(001) by High Temperature Growth |
| Author | *Viktoria Schlykow, Noriyuki Taoka, Marvin H. Zoellner, Oliver Skibitzki, Peter Zaumseil (IHP, Germany), Giovanni Capellini (IHP and Roma Tre, Italy), Yuji Yamamoto (IHP, Germany), Thomas Schroeder (IHP and BTU Cottbus, Germany), Gang Niu (IHP, Germany) |
| Page | pp. 92 - 93 |
| Title | Effect of Local and Global Strain on Thermal Stability of Sn in GeSn Based Film |
| Author | *Yosuke Shimura, Takanori Asano, Takashi Yamaha, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ., Japan) |
| Page | pp. 94 - 95 |
| Title | Electrical and Optical Properties Improvement of GeSn Layers Formed at High Temperature under Well-controlled Sn Migration |
| Author | *Noriyuki Taoka (IHP, Germany), Geovanni Capellini (IHP/Univ. Roma Tre, Germany), Viktoria Schlykow, Michele Montanari, Peter Zaumseil (IHP, Germany), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ., Japan), Thomas Schroeder (IHP/UTB Cottbus, Germany) |
| Page | pp. 96 - 97 |
| Title | Non-Thermal Equilibrium Growth of Amorphous Ge1-xSnx (0≤x≤0.2) / Insulator Structures by Pulsed Laser-Annealing |
| Author | *Kenta Moto, Ryo Matsumura, Taizo Sadoh, Hiroshi Ikenoue, Masanobu Miyao (Kyushu Univ., Japan) |
| Page | pp. 98 - 99 |
| Title | Low Temperature (≤ 250oC) Au-Induced Lateral Crystallization of Sn-Doped Ge on Insulator |
| Author | *Takatsugu Sakai, Ryo Matsumura, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ., Japan) |
| Page | pp. 100 - 101 |
| Title | Characterization of Ge Tunnel FET with Metal/Ge Junction |
| Author | *Keisuke Yamamoto, Hayato Okamoto, Dong Wang, Hiroshi Nakashima (Kyushu Univ., Japan) |
| Page | pp. 102 - 103 |
| Title | Tunneling Current Characteristics by Al+N Isoelectronic Traps in Si-TFET; First-principles Study |
| Author | *Shota Iizuka, Yoshihiro Asayama, Takashi Nakayama (Chiba Univ., Japan) |
| Page | pp. 104 - 105 |
| Title | (Invited Paper) Si and SiGe Tunnel FETs |
| Author | *Qing-Tai Zhao, Gia Vinh Luong, Keyvan Narimani, Stefan Glass, Chang Liu, Sebastian Blaeser, Christian Schulte-Braucks, Nils von den Driesch, Dan Buca, Siegfried Mantl (Forschungszentrum Jülich, Germany) |
| Page | pp. 106 - 107 |
| Title | XPS Nanocharacterization of Thin SiGe Channel Layers for Process Development and Industrial Control of Advanced CMOS Technologies |
| Author | *Laurent Fauquier (STMicroelectronics, France), Bernard Pelissier (CNRS, LTM, MINATEC Campus, France), Denis Jalabert (CEA, INAC (SP2M/LEMMA), France), François Pierre, Jean-Michel Hartmann (CEA, LETI, MINATEC Campus, France), Delphine Doloy (STMicroelectronics, France), Carlos Beitia (CEA, LETI, MINATEC Campus, France), Thierry Baron (CNRS, LTM, MINATEC Campus, France) |
| Page | pp. 108 - 109 |
| Title | In-Line Monitoring of Strain Distribution Using High Resolution X-Ray Reciprocal Space Mapping into 20nm SiGe pMOS |
| Author | *Aurèle Durand, Melissa Kaufling, Delphine Le-Cunff (STMicroelectronics, France), Denis Rouchon (CEA Leti, France), Patrice Gergaud (Univ. Grenoble Alpes, France) |
| Page | pp. 110 - 111 |
| Title | Direct Measurement of Anisotropic Local Strain in Ge Nanostructures Strained with MOCVD-grown Ge1-xSnx by using Microdiffraction |
| Author | *Shinichi Ike, Yuki Inuzuka, Tomoya Washizu, Wakana Takeuchi, Yosuke Shimura (Nagoya Univ., Japan), Yasuhiko Imai (JASRI, Japan), Osamu Nakatsuka (Nagoya Univ., Japan), Shigeru Kimura (JASRI, Japan), Shigeaki Zaima (Nagoya Univ., Japan) |
| Page | pp. 112 - 113 |
| Title | (Invited Paper) Seeing the Invisible: Metrology for Extended Crystalline Defects in Beyond Silicon Semiconductors |
| Author | *Andreas Schulze (imec, Belgium), Anna Prokhodtseva, Tomas Vystavel (FEI, Czech Republic), David Gachet, Jean Berney (Attolight AG, Switzerland), Roger Loo (imec, Belgium), Wilfried Vandervorst (imec, KU Leuven, Belgium), Matty Caymax (imec, Belgium) |
| Page | p. 114 |
| Title | (Invited Paper) Development of Freestanding GaN Substrates and 4 kV Power p-n Junction Diodes |
| Author | *Tomoyoshi Mishima, Fumimasa Horikiri (Hosei Univ., Japan) |
| Page | pp. 115 - 116 |
| Title | Mapping of ICP-Etching Induced Damages on GaN Surfaces Using Scanning Internal Photoemission Microscopy |
| Author | *Hiroyoshi Imdate, Akihisa Terano, Kenji Shiojima (Univ. of Fukui, Japan) |
| Page | pp. 117 - 118 |
| Title | Deep Level Transient Spectroscopy of Low-Carrier Concentration n-GaN Layers Grown on Freestanding GaN Substrates |
| Author | *Kenji Shiojima, Takeshi Tanaka (Univ. of Fukui, Japan), Tomoyoshi Mishima (Hosei Univ., Japan), Yutaka Tokuda (Aichi Inst. of Tech., Japan) |
| Page | pp. 119 - 120 |
| Title | (Invited Paper) Enhancement of Heat Dissipation of Substrate-Transferred GaN-HEMT Using Layered h-BN |
| Author | *Masanobu Hiroki, Kazuhide Kumakura, Hideki Yamamoto (NTT, Japan) |
| Page | pp. 121 - 122 |
| Friday, June 10, 2016 |
| Title | (Keynote) Wide Bandgap Metal-Oxide and Organic Semiconductor Heterojunctions on Silicon |
| Author | *James C. Sturm (Princeton Univ., U.S.A.) |
| Page | pp. 123 - 124 |
| Title | (Keynote) III-V/Ge/Si Heterogeneous Integration for Post Si CMOS Applications |
| Author | *Edward Yi Chang (National Chiao Tung Univ., Taiwan) |
| Page | pp. 125 - 126 |
| Title | (Invited Paper) Nanowire CMOS Transistors: Carrier Mobility and Strain Benefits for Improved Performance |
| Author | *S. Barraud (CEA-LETI, France), M.P. Samson (STMicroelectronics, France), P. Nguyen, M. Casse (CEA-LETI, France), L. Gaden (CEA-LETI/STMicroelectronics, France), V. Lapras, J.M. Hartmann, C. Vizioz (CEA-LETI, France), C. Arvet (STMicroelectronics, France), V. Loup, F. Glowacki, M. Vinet (CEA-LETI, France) |
| Page | pp. 127 - 128 |
| Title | (Invited Paper) Continuum Modeling of Ge/Si Heteroepitaxy: Interplay Between Elastic and Plastic Relaxation |
| Author | Fabrizio Rovaris, *Roberto Bergamaschini, Marco Albani, Marco Salvalaglio, Leo Miglio, Francesco Montalenti (Univ. di Milano-Bicocca, Italy) |
| Page | pp. 129 - 130 |
| Title | Methods to Reduce Threading Dislocation Density (TDD) in Germanium-on-Silicon (Ge/Si) Substrate |
| Author | *Kwang Hong Lee (Singapore-MIT Alliance for Research & Technology, Singapore), Shuyu Bao (Nanyang Technological Univ., Singapore), Kenneth Eng Kian Lee (Singapore-MIT Alliance for Research & Technology, Singapore), Gang Yih Chong, Yew Heng Tan (Nanyang Technological Univ., Singapore), Eugene Fitzgerald (MIT, U.S.A.), Chuan Seng Tan (Nanyang Technological Univ., Singapore) |
| Page | pp. 131 - 132 |
| Title | Ge Virtual Substrate Growth on Micrometer-Scaled Si Pillars by RPCVD |
| Author | *Oliver Skibitzki, Giovanni Capellini (IHP, Germany), Francesco Montalenti, Michael R. Barget, Anna Marzegalli (Univ. di Milano-Bicocca, Italy), Peter Zaumseil, Yuji Yamamoto, Markus A. Schubert (IHP, Germany), Fabio Pezzoli, Emiliano Bonera, Andrea Scaccabarozzi, Roberto Bergamaschini, Marco Salvalaglio (Univ. di Milano-Bicocca, Italy), Thomas Schroeder (IHP/BTU Cottbus-Senftenberg, Germany), Leo Miglio (Univ. di Milano-Bicocca, Italy) |
| Page | pp. 133 - 134 |
| Title | Benchmarking of Germane and Digermane for the Low Temperature Growth of Intrinsic and Heavily in-situ Boron-Doped SiGe |
| Author | Jean-Michel Hartmann, *Joris Aubin, Jean-Paul Barnes (CEA-LETI, Grenoble, France) |
| Page | pp. 135 - 136 |
| Title | (Invited Paper) Growth of Orientation-Controlled Ferroelectric HfO2 Thin Films for Next Generation Ferroelectric Devices |
| Author | *Hiroshi Funakubo, Takanori Mimura, Kiriha Katayama, Takao Shimizu (Tokyo Inst. of Tech., Japan), Hiroshi Uchida (Sophia Univ., Japan), Takanori Kiguchi, Akihiro Akama, Toyohiko Konno (Tohoku Univ., Japan), Osami Sakata (NIMS, Japan) |
| Page | pp. 137 - 138 |
| Title | 10-nm-Scale Ferroelectric Domain Distribution in Ferroelectric HfO2 Observed by Using Piezo-Response Force Microscopy |
| Author | *Shigehisa Shibayama, Lun Xu, Xuan Tian (Univ. of Tokyo, Japan), Shinji Migita (AIST, Japan), Akira Toriumi (Univ. of Tokyo, Japan) |
| Page | pp. 139 - 140 |
| Title | Experimental and Thermodynamic Investigation of SiGe Oxidation and GeO Desorption for Controlled SiGe Gate Stack Formation |
| Author | *Woojin Song, Akira Toriumi (Univ. of Tokyo, Japan) |
| Page | pp. 141 - 142 |
| Title | Influences of Oxygen Addition on Electrical Properties of V-Doped ZnO Films Grown by Reactive RF Magnetron Sputtering |
| Author | *Tomoyuki Kawashima, Dai Abe, Katsuyoshi Washio (Tohoku Univ., Japan) |
| Page | pp. 143 - 144 |
| Title | Bipolar/Complementary Resistive Switching and Transport Characteristics Using a New Ir/SiO2/TiN Structure |
| Author | *P.L. You, G. Sreekanth, S. Roy, S. Chakrabarti (Chang Gung Univ., Taiwan), H.-M. Cheng (ITRI, Taiwan), S. Maikap (Chang Gung Univ., Taiwan) |
| Page | pp. 145 - 146 |
| Title | Hybrid Graphene/Dislocation-Free Ge Islands Selectively Grown on Si Nano-Tip Patterns for High Performance Photodetection |
| Author | *Gang Niu (Xi'an Jiaotong Univ., China), Giovanni Capellini, Grzegorz Lupina (IHP, Germany), Tore Niermann (Tech. Univ. Berlin, Germany), Marco Salvalaglio, Anna Marzegalli (Univ. degli Studi di Milano-Bicocca, Italy), Markus Andreas Schubert, Peter Zaumseil, Hans-Michael Krause, Oliver Skibitzki, Viktoria Schlykow (IHP, Germany), Michael Lehmann (Tech. Univ. Berlin, Germany), Francesco Montalenti (Univ. degli Studi di Milano-Bicocca, Italy), Ya-Hong Xie (Univ. of California, Los Angeles, U.S.A.), Thomas Schroeder (IHP, Germany) |
| Page | pp. 147 - 148 |
| Title | Estimation of Strain in Freestanding Graphene Develpoed by Dry Transfer Technique |
| Author | *Hayato Ishida, Kazuaki Sawada, Makoto Ishida, Kazuhiro Takahashi (Toyohashi Univ. of Tech., Japan) |
| Page | pp. 149 - 150 |
| Title | Record High Electron Mobility of 2.4 × 106 cm2/V s in Strained Si by Ultra-low Background Doping |
| Author | *S.-H. Huang, F.-L. Lu (National Taiwan Univ., Taiwan), S. V. Kravchenko (Northeastern Univ., U.S.A.), C. W. Liu (National Taiwan Univ., Taiwan) |
| Page | pp. 151 - 152 |
| Title | (Invited Paper) Low-Energy SOI Devices for RF Applications in Sensor Network Era |
| Author | *Yasuhisa Omura (Kansai Univ., Japan) |
| Page | pp. 153 - 154 |
| Title | Remarkably Low Leakage Currents at Reversely Biased Ge n+/p Junctions by Passivating Interface Leakage Paths |
| Author | *Tony Chi Liu, Hiroki Ikegaya, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo, Japan) |
| Page | pp. 155 - 156 |
| Title | Anomalous Diffusion of Boron in Ge p+/n Junctions in the Presence of Fluorine |
| Author | *William Hsu, Taegon Kim, Harry Chou, Amritesh Rai, Andrei Dolocan, Sanjay Banerjee (Univ. of Texas, Austin, U.S.A.) |
| Page | pp. 157 - 158 |
| Title | Experiments and Quantitative Modeling of Si-Ge Interdiffusion with High Phosphorus Doping |
| Author | Feiyang Cai (Univ. of British Columbia, Canada), Dalaver H. Anjum, Xixiang Zhang (King Abdullah Univ. of Science and Tech., Saudi Arabia), *Guangrui (Maggie) Xia (Univ. of British Columbia, Canada) |
| Page | pp. 159 - 160 |
| Title | Ultimately Abrupt n+ Si/pGe Junctions Formed by Hetero-Membrane Bonding |
| Author | *Tony Chi Liu, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo, Japan) |
| Page | pp. 161 - 162 |
| Title | Improving Optical Properties of Ge Waveguides Fabricated by Epitaxial Lateral Overgrowth and Chemical Mechanical Polishing |
| Author | *Katsuya Oda, Tadashi Okumura, Junichi Kasai (Hitachi, Japan), Satoshi Kako, Satoshi Iwamoto, Yasuhiko Arakawa (Univ. of Tokyo, Japan) |
| Page | pp. 163 - 164 |
| Title | Strained Ge Nanowires Coupled with High Quality Cavity Towards Integrated Infrared Chemical Sensors |
| Author | *Shuyu Bao (Nanyang Technological Univ., Singapore), Jan Petykiewicz (Stanford Univ., U.S.A.), Youngmin Kim (Inha Univ., Republic of Korea), Jelena Vuckovic, Krishna C Saraswat (Stanford Univ., U.S.A.), Eugene Fitzgerald (Singapore-MIT Alliance for Research and Technology (SMART), Singapore), Chuan Seng Tan (Nanyang Technological Univ., Singapore), Donguk Nam (Inha Univ., Republic of Korea) |
| Page | pp. 165 - 166 |
| Title | Temperature Characteristics of Tensile-Strained Ge-on-Si Lasers |
| Author | Xiyue Li (South China Univ. of Tech., China), Zhiqiang Li, Simon Li (Crosslight Software, Canada), Bin Li (South China Univ. of Tech., China), *Guangrui Xia (Univ. of British Columbia, Canada) |
| Page | pp. 167 - 168 |
| Title | High Sn Content GeSn Light Emitters for Group IV Photonics |
| Author | *Daniela Stange, Nils von den Driesch, Stephan Wirths (Forschungszentrum Jülich GmbH, Germany), Jean-Michel Hartmann (Univ. Grenoble Alpes, CEA LETI MINATEC, France), Zoran Ikonic (Univ. of Leeds, U.K.), Siegfried Mantl, Detlev Grützmacher, Buca Dan (Forschungszentrum Jülich GmbH, Germany) |
| Page | pp. 169 - 170 |
| Title | Thermal Solid-Phase Crystallization of Stacked Amorphous Undoped/V-Doped ZnO Film Grown by RF Magnetron Sputtering |
| Author | *Akihiro Watanabe, Tomoyuki Kawashima, Katsuyoshi Washio (Tohoku Univ., Japan) |
| Page | pp. 171 - 172 |
| Title | Optical and Structural Properties of CuCrO2:N Thin Films on c-Face Sapphire Substrate Deposited by Reactive RF Magnetron Sputtering |
| Author | *Hiroshi Chiba, Tomoyuki Kawashima, Katsuyoshi Washio (Tohoku Univ., Japan) |
| Page | pp. 173 - 174 |
| Title | Material Properties of V-Doped ZnO Thin Film Deposited by Using Reactive RF Magnetron Sputtering in Nitrogen/Argon Gas Mixture |
| Author | *Tomoya Suzuki, Tomoyuki Kawashima, Katsuyoshi Washio (Tohoku Univ., Japan) |
| Page | pp. 175 - 176 |
| Title | Structural Evolution of Two-Dimensional Initial Growth in V-Doped ZnO Ultrathin Film on c-Face Sapphire Substrate |
| Author | *Tomohiro Kanematsu, Hiroshi Chiba, Tomoyuki Kawashima, Katsuyoshi Washio (Tohoku Univ., Japan) |
| Page | pp. 177 - 178 |
| Title | Effects of Temperature and Pressure in Oxynitridation Kinetics on Si(100) with N2O Gas |
| Author | *Yoshiharu Enta, Makoto Wada, Mariko Arita, Takahiro Takami (Hirosaki Univ., Japan) |
| Page | pp. 179 - 180 |
| Title | Impact of Incubation Time on Deposition of Flat Ru Thin Film on Various Kinds of Substrates at Different Temperature |
| Author | *Hirokazu Chiba (Tokyo Inst. of Tech., and TOSOH, Japan), Masaki Hirano (Tokyo Inst. of Tech., Japan), Kazuhisa Kawano, Noriaki Oshima (TOSOH, Japan), Hiroshi Funakubo (Tokyo Inst. of Tech., Japan) |
| Page | pp. 181 - 182 |
| Title | Characterization of Deep Defects in Boron-Doped CVD Diamond Films Using Transient Photocapacitance Method |
| Author | *Osamu Maida, Takanori Hori, Taishi Kodama, Toshimichi Ito (Osaka Univ., Japan) |
| Page | pp. 183 - 184 |
| Title | Analysis of the Surface Roughness Correlation Function by X-ray Reflectivity |
| Author | *Yoshikazu Fujii (Kobe Univ., Japan) |
| Page | pp. 185 - 186 |
| Title | Thickness Dependent Current Transport Characteristics and Performance Using a Novel Cr/BaTiO3/TiN RRAM Device |
| Author | *Zongyi Wu, Ginnaram Sreekanth, Sourav Roy, Subhranu Samanta, Siddheswar Maikap (Chang Gung Univ., Taiwan) |
| Page | pp. 187 - 188 |
| Title | Hole Trapping Characteristics of SiCN-Based Charge Trapping Memories Using the Constant-Current Carrier Injection Method |
| Author | *Sheikh Rashel Al Ahmed, Shin Tanaka, Kiyoteru Kobayashi (Tokai Univ., Japan) |
| Page | pp. 189 - 190 |
| Title | First Principles Analysis of Atomic Configurations of C and Sn Near The Surface of Si Thin Film for Solar Cells |
| Author | *Kai Tadano, Koji Sueoka (Okayama Prefectual Univ., Japan) |
| Page | pp. 191 - 192 |
| Title | Density Functional Theory Calculations of Atomic Configurations and Bandgap of C, Sn Doped Si Crystal for Solar Cells |
| Author | *Kento Toyosaki, Koji Sueoka (Okayama Prefectual Univ., Japan) |
| Page | pp. 193 - 194 |
| Title | First Principles Analysis of Atomic Configurations in SiSnC System for Solar Cells |
| Author | *Hiroki Koyama, Koji Sueoka (Okayama Prefectual Univ., Japan) |
| Page | pp. 195 - 196 |
| Title | Mapping of Ion-Implanted n-SiC Schottky Contacts Using Scanning Internal Photoemission Microscopy |
| Author | *Shingo Murase (Univ. of Fukui, Japan), Tomoyoshi Mishima, Tohru Nakamura (Hosei Univ., Japan), Kenji Shiojima (Univ. of Fukui, Japan) |
| Page | pp. 197 - 198 |
| Title | Highly Oriented Lanthanum-Substituted Bismuth Titanate Thin Films on Silicon Substrates by Chemical Solution Deposition Method |
| Author | *Atsushi Kohno, Takayuki Tajiri (Fukuoka Univ., Japan) |
| Page | pp. 199 - 200 |
| Title | Chemical Identification of Nanomaterials on Surfaces by Atomic Force Spectroscopy and SR X-Ray |
| Author | *Shushi Suzuki (Nagoya Univ., Japan), Shingo Mukai (Hokkaido Univ., Japan), Wang Jae Chun (Int. Christian Univ., Japan), Masaharu Nomura (KEK-IMSS-PF, Japan), Kiyotaka Asakura (Hokkaido Univ., Japan) |
| Page | pp. 201 - 202 |
| Title | Preferentially (111) Oriented Crystalline Ge by Low Temperature (~200 ℃) Au Induced Solid Phase Crystallization |
| Author | *Kohei Kudo, Ryosuke Mochii, Tatsushi Nomitsu, Kenichiro Takakura, Isao Tsunoda (National Inst. of Tech., Kumamoto College, Japan) |
| Page | pp. 203 - 204 |
| Title | Al-Induced Crystallization of Intermediate-Composition SiGe on Insulator |
| Author | *Mitsuki Nakata, Kaoru Toko, Takashi Suemasu (Univ. of Tsukuba, Japan) |
| Page | pp. 205 - 206 |
| Title | Silicon-Carbon Alloy Film Formation on Si(100) Using SiH4 and CH4 Reaction under Low-Energy ECR Ar Plasma Irradiation |
| Author | Shogo Sasaki, *Masao Sakuraba, Hisanao Akima, Shigeo Sato (Tohoku Univ., Japan) |
| Page | pp. 207 - 208 |
| Title | Position-Controlled Ge Crystals on Insulator at Low Temperature (≤300°C) by Spatially-Modulated Gold-Induced Crystallization |
| Author | *Rikuta Aoki, Takahiro Tanaka, Jong-Hyeok Park, Masanobu Miyao, Taizoh Sadoh (Kyushu Univ., Japan) |
| Page | pp. 209 - 210 |
| Title | Formation of High-Mobility Ge(Sn) on Insulator by Low-Temperature (~400°C) Solid-Phase Crystallization |
| Author | Yuki Kai, Ryo Matsumura, *Taizoh Sadoh, Masanobu Miyao (Kyushu Univ., Japan) |
| Page | pp. 211 - 212 |
| Saturday, June 11, 2016 |
| Title | Improvement of C-V Characteristics in LaYO3/La2O3/Ge(111) MIS Structures |
| Author | *Takeshi Kanashima, Masato Zenitaka (Osaka Univ., Japan), Keisuke Yamamoto (Kyushu Univ., Japan), Riku Yamashiro (Osaka Univ., Japan), Hiroshi Nohira (Tokyo City Univ., Japan), Hiroshi Nakashima (Kyushu Univ., Japan), Shinya Yamada, Kohei Hamaya (Osaka Univ., Japan) |
| Page | pp. 213 - 214 |
| Title | Effect of Post Annealing on Hole Mobility of Pseudo-Single-Crystalline Germanium Thin-Film-Transistors on Glass Substrates |
| Author | *Kenji Kasahara (Fukuoka Univ., Japan), Hidenori Higashi, Mario Nakano (Osaka Univ., Japan), Yuta Nagatomi, Keisuke Yamamoto, Hiroshi Nakashima (Kyushu Univ., Japan), Kohei Hamaya (Osaka Univ., Japan) |
| Page | pp. 215 - 216 |
| Title | Heavily Phosphorus-doped Si0.1Ge0.9 and Ge on Si with Low Contact Resistivity by Chemical Vapor Deposition and Laser Annealing |
| Author | *F.-L. Lu, S.-H. Huang, C. W. Liu (National Taiwan Univ., Taiwan) |
| Page | pp. 217 - 218 |
| Title | (Invited Paper) High-mobility GeSn-based MOSFETs on Transparent Substrates |
| Author | *Heiji Watanabe, Hiroshi Oka, Takashi Amamoto, Takuji Hosoi, Takayoshi Shimura (Osaka Univ., Japan) |
| Page | pp. 219 - 220 |
| Title | Liquid-Phase Deposition of Thin Si and Ge Films Based on Ballistic Hot Electron Printing |
| Author | *Ryutaro Suda, Mamiko Yagi, Akira Kojima (Tokyo Univ. of Agri. and Tech., Japan), Nobuya Mori (Osaka Univ., Japan), Jun-ichi Shirakashi, Nobuyoshi Koshida (Tokyo Univ. of Agri. and Tech., Japan) |
| Page | pp. 221 - 222 |
| Title | Liquid Phase Growth of Composition-Controlled Large-Grain SixGe1-x (0 ≤ x ≤ 0.2) on Insulating Substrates |
| Author | *Ryo Matsumura, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ., Japan) |
| Page | pp. 223 - 224 |
| Title | (Invited Paper) Quantum Phenomena in Epitaxial Strained Germanium |
| Author | *Maksym Myronov (Univ. of Warwick, U.K.) |
| Page | pp. 225 - 226 |
| Title | Increased Doping Depth of Al in Wet-chemical Laser Doping of 4H-SiC by Expanding Laser Pulse |
| Author | *Akihiro Ikeda, Daichi Marui, Rikuho Sumina, Hiroshi Ikenoue, Tanemasa Asano (Kyushu Univ., Japan) |
| Page | pp. 227 - 228 |
| Title | An Universal Parameter Showing SiO2/SiC Interface Quality of Both Silicon and Carbon-face based on Scanning Nonlinear Dielectric Microscopy |
| Author | *Norimichi Chinone, Alpana Nayak (Tohoku Univ., Japan), Ryoji Kosugi (AIST, Japan), Yasunori Tanaka (Council for Science, Technology and Innovation Policy, Cabinet Office, Government of Japan, Japan), Shinsuke Harada, Yuji Kiuchi, Hajime Okumura (AIST, Japan), Yasuo Cho (Tohoku Univ., Japan) |
| Page | pp. 229 - 230 |
| Title | 2-Dimensional Local Deep Level Transient Spectroscopy Imaging of Thermally Oxidized Silicon-Face SiC wafers using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy |
| Author | *Norimichi Chinone (Tohoku Univ., Japan), Ryoji Kosugi (AIST, Japan), Yasunori Tanaka (Council for Science, Technology and Innovation Policy, Cabinet Office, Government of Japan, Japan), Shinsuke Harada, Hajime Okumura (AIST, Japan), Yasuo Cho (Tohoku Univ., Japan) |
| Page | pp. 231 - 232 |
| Title | Determination of Energy Band Profile of Thermally-grown SiO2/4H-SiC Structure Using XPS |
| Author | *Hiromasa Watanabe, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ., Japan) |
| Page | pp. 233 - 234 |
| Title | Tensile Strain UTB-SiGe on Insulator through the Hetero-Layer Transfer Technique |
| Author | *Wen Hsin Chang, Hiroyuki Ishii, Hiroyuki Hattori, Toshifumi Irisawa, Noriyuki Uchida, Tatsuro Maeda (AIST, Japan) |
| Page | pp. 235 - 236 |
| Title | Cracking in Low Dose Hydrogen Ion-Implanted Si/B Doped Si0.70Ge0.30/Si Heterostructure |
| Author | Yongwei Chang, Pengfei Jia (Chinese Academy of Sciences, China), Da Chen (Ningbo Univ., China), Zhongying Xue, *Xing Wei (Chinese Academy of Sciences, China) |
| Page | pp. 237 - 238 |
| Title | Direct Bonding of Silicon/GaAs for PV Application |
| Author | *Marwan Tedjini, Frank Fournel, Vincent Larrey, Christophe Morales (CEA, Leti, Minatec Campus, France), François Rieutord (CEA, INAC, France), Bruno Imbert, Céline Brughera, Thierry Salvetat, Cécilia Dupre (CEA, Leti, Minatec Campus, France) |
| Page | pp. 239 - 240 |