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| Monday, November 10, 2025 |
| Title | (Keynote Talk) Channel engineering for extremely-thin nano-sheet MOSFETs |
| Author | *Shinichi Takagi, Kei Sumita, Xueyang Han, Chia-Tsong Chen, Mitsuru Takenaka, Kasidit Toprasertpong (Univ. of Tokyo, Japan) |
| Title | (Invited Talk) Interface Engineering of GaN-based Metal-Oxide-Semiconductor Devices |
| Author | *Heiji Watanabe, Masahiro Hara, Takuma Kobayashi (Univ. of Osaka, Japan) |
| Title | Electronic property control of n-GaN MOS interface by a dummy SiO2 process |
| Author | *Yasuo Koide (Meijo Univ., Japan), Yoshihiro Irokawa, Toshihide Nabatame, Tomomi Sawada, Hiromi Miura, Manami Miyamoto, Kazuhito Tsukagoshi (National Institute for Materials Science (NIMS), Japan) |
| Title | Kinetic Study on N-radical Nitridation of 4H-SiC Surface Considering N-density-dependent Change in N-incorporation and N-desorption Rates |
| Author | *Haruki Yoshida, Atsushi Tamura, Koji Kita (Univ. of Tokyo, Japan) |
| Title | Interface characterization of epitaxial strontium titanate on germanium (100) prepared by pulsed laser deposition |
| Author | *Lucija Bučar (Advanced Materials Department, Jozef Stefan Institute/Jozef Stefan International Postgraduate School, Slovenia), Nina Daneu, Matjaž Spreitzer (Advanced Materials Department, Jozef Stefan Institute, Slovenia) |
| Title | (Invited Talk) The Significance of International Standardization and its Future Challenges for semiconductor materials |
| Author | *Ryuji Takeda (Japan Society of Newer Metals (JSNM), Japan) |
| Title | First-principles study on network effects of medium on excess Si transport in Si oxide films |
| Author | *Hiroyuki Kageshima, Insung Seo (Shimane Univ., Japan), Toru Akiyama (Mie Univ., Japan), Kenji Shiraishi (Tohoku Univ., Japan) |
| Title | Improved Self-Heating Stress Reliability via Boron Doping in a-IGZO TFTs for BEOL Integration |
| Author | *Po-Yu Yen, Tzu-Hsuan Juan, Hsin-Ya Hung (National Sun Yat-sen Univ., Taiwan), Meng-Xuan Feng (National Kaohsiung Univ. of Science and Tech., Taiwan), Ting-Chang Chang (National Sun Yat-sen Univ., Taiwan) |
| Title | The Observed Two-Peak-Photoluminescence of Al-Catalyzed Grown Spherulite-Like GeS Thin Films |
| Author | *Qinqiang Zhang, Ryo Matsumura (NIMS, Japan), Zihan Lin, Junjun Jia (Waseda Univ., Japan), Naoki Fukata (NIMS/Tsukuba Univ., Japan) |
| Tuesday, November 11, 2025 |
| Title | (Invited Talk) To be announced. |
| Author | *Hiroki Ago (Kyushu Univ., Japan) |
| Title | Post-annealing of conductive amorphous W-doped In₂O₃ films under vacuum and atmospheric pressure: surface and electrical properties |
| Author | *Tetsuya Yamamoto (Kochi Univ. of Tech., Japan) |
| Title | On the rate of oxidation of heavily boron-doped germanium wafers from Czochralski-grown bulk crystals |
| Author | *Aravind Narayan Subramanian, Saud Bin Anooz (Leibniz-Institut für Kristallzüchtung (IKZ), Germany), Lukas Paul Schewe (Brandenburg Univ. of Tech. Cottbus–Senftenberg, Germany), Pradeep Chandra Palleti (Leibniz-Institut für Kristallzüchtung (IKZ), Germany), Carlos Morales Sanchez (Brandenburg Univ. of Tech. Cottbus–Senftenberg, Germany), Carsten Richter, Merve Pinar Kabukcuoglu (Leibniz-Institut für Kristallzüchtung (IKZ), Germany), Jan Ingo Flege (Carlos.MoralesSanchez@b-tu.de, Germany), R. Radhakrishnan Sumathi (Leibniz-Institut für Kristallzüchtung (IKZ), Germany) |
| Title | Reproducing Metal / Germanium Interfaces Using High-Dimensional Neural Network Potentials |
| Author | *Machika Naito, Yusuke Nishimura, Kotaro Takematsu, Hiroki Nomura, Takanobu Watanabe (Waseda Univ., Japan) |
| Title | Analysis of Oxidation Mechanism of Group IV Semiconductor Substrates by ReaxFF MD |
| Author | *Kenta Sekiguchi, Daisuke Ohori, Kazuhiko Endo, Takashi Tokumasu (Tohoku Univ., Japan) |
| Title | (Invited Talk) Optical Characteristics of Single-crystal GeSn Thin Wires Fabricated by Local Liquid Phase CrystallizationOptical Characteristics of Single-crystal GeSn Thin Wires Fabricated by Local Liquid Phase Crystallization |
| Author | *Takayoshi Shimura (Waseda Univ./Univ. of Osaka, Japan), Takuji Hosoi (National Institute for Materials Science/Univ. of Osaka, Japan), Takuma Kobayashi, Heiji Watanabe (Univ. of Osaka, Japan) |
| Title | (Invited Talk) Thin Film Metasurfaces Integrated with Optoelectronic Devices: Tuning Light-matter Interaction at the Nanoscale |
| Author | *Inga Anita Fischer (BTU Cottbus-Senftenberg, Germany) |
| Title | Strain Relaxation in SiGe Thin Film on (110)Si Substrate with Rough Surface |
| Author | *Yuta Ito (Meiji Univ., JSPS Research Fellow, Japan), Koji Usuda (Meiji Renewable Energy Laboratory, Japan), Kiu Inami (AIST, Japan), Atsushi Ogura (Meiji Univ., Meiji Renewable Energy Laboratory, Japan) |
| Title | Formation of Ultrathin Single-Crystalline NiSi2-On-Insulator Through RTA of Ultrathin a-Si/Ni Layered Structures Formed on SOI Substrates |
| Author | *Yuki Imai, Shun Tanida (Nagoya Univ., Japan), Yuji Yamamoto (Nagoya Univ., Germany), Noriyuki Taoka (Aichi Inst. of Tech., Japan), Katsunori Makihara (Nagoya Univ./IHP – Leibniz-Institut für Innovative Mikroelektronik, Japan) |
| Title | (Invited Talk) (C)(Si)GeSn-based lasers on Si |
| Author | *Dan Buca, Omar Concepcion (Forschungszentrum Juelich, Germany), Giovanni Capellini (Univ. Roma Tre, Germany), Michael Oehme (Univ. of Stuttgart, Germany), Detlev Grützmacher (Forschungszentrum Juelich, Germany) |
| Title | Study on the Performance Improvement of Optical-Interference Contactless Thermometry Based on Machine Learning |
| Author | *Jiawen Yu, Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ., Japan) |
| Title | A Study on Threshold Voltage Control of GaN MIS-HEMT with Metal-Capped Oxidation Process |
| Author | *Kensuke Sagawa, Si-Meng Chen, Takuya Hoshii (Institute of Science Tokyo, Japan), Takashi Yoda, Takayuki Ohba (WOW Alliance/Institute of Science Tokyo, Japan), Kuniyuki Kakushima (Institute of Science Tokyo, Japan) |
| Title | (Invited Talk) Analysis of Oxygen Precipitates by High-parallel X-ray Diffuse Scattering |
| Author | *Tomoyuki Horikawa (GlobalWafers Japan / Univ. of Osaka, Japan), Tetsuya Tohei, Akira Sakai (Univ. of Osaka, Japan), Yoshiyuki Tsusaka (Univ. of Hyogo, Japan), Junji Matsui (Synchrotron Radiation Research Center, Japan) |
| Title | (Invited Talk) Pushing the limits: Toward epitaxy of the shortest-period 72Ge concentration oscillations in strained 28Si quantum wells |
| Author | *Kevin-Peter Gradwohl (IKZ, Germany) |
| Title | Large Scale Fabrication of High Quality Thick S0.5G0.5OI Layer using Ge Condensation |
| Author | *Olivier Gourhant, Anne-Flore Mallet (STMicroelectronics, France), Adam Arette-Hourquet, Ismail Madaci (Aix Marseille Univ., France), Mansour Aouassa (Jouf Univ., France), Luc Favre, Isabelle Berbezier (Aix Marseille Univ., France), Christophe Duluard, Adonis Steve Takala (STMicroelectronics, France) |
| Title | (Invited Talk) To be announced. |
| Author | *Giovanni Isella (LNESS - Politecnico di Milano Dipartimento di Fisica, Italy) |
| Title | Analysis of key factors affecting selectivity and conformality of lateral Si/SiGe stack etching |
| Author | Ivan Petras, Philipp Fedorov, *Anton Kobelev, Yury Shustrov (Semiconductor Technology Research d.o.o. Beograd, Serbia) |
| Title | The Valence and Conduction Band Offsets of SiGeSn |
| Author | *Daniel Schwarz, Alwin Daus, Michael Oehme (Univ. of Stuttgart, Germany) |
| Title | Selective Ultra-Low Temperature SiGe:B Source/Drain Epitaxy for Application in Nanosheet-based Devices |
| Author | *Daniel Casey, Conor Cullen (ASM International, Belgium), Ritam Sarkar (IMEC, Belgium), Lutz Muehlenbein (ASM International, USA), Arka Dutta, Naoto Horiguchi, Lucas P. B. Lima (IMEC, Belgium), Rami Khazaka (ASM International, Belgium) |
| Title | (Si)GeSn as a material system for CMOS-compatible thermoelectric devices |
| Author | *Giovanni Capellini (Univ. Roma Tre, Germany), Jhonny Tiscareño-Ramírez (Peter Gruenberg Institute 9 (PGI-9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Juelich, Germany), Damiano Marian (Univ. di Pisa, Italy), Prateek Kaul (Peter Gruenberg Institute 9 (PGI-9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Juelich, Germany), Patrizio Graziosi (CNR - ISMN, Italy), Agnieszka Anna Corley-Wiciak (European Synchrotron Radiation Facility, France), Detlev Grützmacher (Peter Gruenberg Institute 9 (PGI-9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Juelich, Germany), Michele Virgilio (Univ. di Pisa, Italy), Dan Buca (Peter Gruenberg Institute 9 (PGI-9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Juelich, Germany) |
| Title | (Invited Talk) Advanced synchrotron radiation x-ray microscopies investigation of the lattice strain in (Si)GeSn-based lasers with sub-100 nm, 10 ns resolution |
| Author | *Giovanni Capellini (Univ. Roma Tre, Germany) |
| Title | (Invited Talk) To be announced. |
| Author | *Moutanabbir Oussama (Ecole Polytechnique de Montreal, Canada) |
| Title | Step Bunching and Meandering Dynamics from a Generalized Reaction-Diffusion Model |
| Author | *Vassil Ivanov (Faculty of Mathematics and Informatics, Sofia Univ. "St.Kliment Ohridski", Bulgaria, Bulgaria), Vesselin Tonchev (Faculty of Physics, Sofia Univ. "St.Kliment Ohridski", Bulgaria, Bulgaria) |
| Title | Au-Ge eutectic droplet formation on the initial stage of selective-area VLS growth of Ge nanowires on Si (111) |
| Author | *Shuya Yamaguchi, Shuma Yuzawa (Hokkaido Univ., Japan), Wipakorn Jevasuwan, Naoki Fukata, Shinjiro Hara (NIMS, Japan) |
| Title | (Invited Talk) Strain-Engineered Ge Epitaxial Layers on Si for Photonic Device Applications |
| Author | *Yasuhiko Ishikawa, Keisuke Yamane (Toyohashi Univ. of Tech., Japan), Junichi Fujikata (Tokushima Univ., Japan) |
| Title | Epitaxial growth of up to 120x {Si0.8Ge0.2 / Si} bilayers in view of 3D DRAM applications |
| Author | *Roger Loo (Imec / Ghent Univ., Dep. of Solid-State Sciences, Belgium), Matteo Beggiato, Yosuke Shimura, Nouredine Rassoul, Wendy Vanherle, Felix Seidel, Kris Paulussen, Janusz Bogdanowicz, Alex Merkulov, Mustafa Ayyad, Attilio Belmnte, Robert Langer (Imec, Belgium) |
| Title | Study on Ge heteroepitaxy on Si(111) substrate using sputtering method |
| Author | *Taichi Okuda (Nagoya university, Japan), Akio Ohta (Fukuoka university, Japan), Ryo Yokogawa (Hiroshima university, Japan), Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka, Shigehisa Shibayama (Nagoya university, Japan) |
| Title | Influence of Strain on Epitaxial SiGe Growth and Initial Reactions |
| Author | *Yuji Yamamoto (Nagoya Univ., Germany), Wei-Chen Wen (IHP - Leibniz-Institut für innovative Mikroelektronik, Germany), Florian Bärwolf (IHP - Leibniz-Institut für innovative Mikroelektronik, Georgia), Jon Schlipf, Oksana Fursenko, Sushil Karki, Marvin. H. Zoelner (IHP - Leibniz-Institut für innovative Mikroelektronik, Germany), Bernd Tillack (IHP - Leibniz-Institut für innovative Mikroelektronik and Technische Universtät Berlin, Germany) |
| Title | (Invited Talk) To be announced. |
| Author | *Hiroshi Oka (AIST, Japan) |
| Title | Crystallization Mechanism Driven by the Topmost ZrO2 Layer in HfxZr1-xO2 Films based on Stacking-Structure-Dependent Crystallization Kinetics |
| Author | *Rina Takahisa, Takashi Onaya, Atsushi Tamura, Koji Kita (Univ. Tokyo, Japan) |
| Title | RPCVD Growth Of Monocristalline Detachable Ge Nanomembrane On Mesoporous Ge Substrate For Sustainable Space Photovoltaics |
| Author | *Chahinaz Khouloud Mahboub, Ahmed Ayari (Univ. of Sherbrooke, Canada), Alexandre Chapotot, Jinyoun Cho, Kristof Dessein (Umicore Electro-Optic Materials, Belgium), Abderraouf Boucherif (Univ. of Sherbrooke, Canada) |
| Title | Isotope-Induced Mass Disorder and Crystal Phase Interfaces: Novel Strategies for Thermal Transport Control in Silicon Nanowires |
| Author | *Samik Mukherjee (Jio Institute, India), Oussama Moutanabbir (Ecole Polytechnique Montreal, Canada) |
| Title | Investigation of Thermal Annealing Effects on Electron-Irradiated Semi-Insulating 4H-SiC: From Defect Recovery to Photoresponse |
| Author | *Ryuki Kamiya, Noriyuki Taoka, Keishiro Goshima, Wakana Takeuchi (Aichi Institute of Tecnhology, Japan) |
| Title | Quantitative Estimation of Conduction Band Tailing at SiO2/Si Interface |
| Author | *Koei Matsubara, Shoma Kato, Hinata Suzuki (Aichi Inst. of Tech., Japan), Katsunori Makihara (Nagoya Univ., Japan), Yusuke Ichino, Yoshiyuki Seike, Tatsuo Mori, Noriyuki Taoka (Aichi Inst. of Tech., Japan) |
| Title | Germanium heterostructures as a novel quantum engineering platform |
| Author | Spandan Anupam, Niels Focke, Zoë Siebers, Katarina Stanojevic, Lino Visser, Vincent Mourik (Solid State Quantum Devices Laboratory, JARA-FIT Institute for Quantum Information (Peter Grünberg Institute-11), Forschungszentrum Jülich GmbH, Wilhelm-Johnen-Straße, 52428, Jülich, Germany. https://squad-lab.org, Germany), Wei-Chen Wen, Yuji Yamamoto, Marco Lisker, Yi-Xian Wu, Marvin Zoellner, Alberto MIstroni (Leibniz Institute for High Performance Microelectronics, Frankfurt (Oder) 15236, Germany, Germany), Giovanni Capellini (Leibniz Institute for High Performance Microelectronics, Frankfurt (Oder) 15236, Germany / Dipartimento di Scienze, Univ. Roma Tre, Roma 00146, Italy, Germany), *Felix Reichmann (Leibniz Institute for High Performance Microelectronics, Frankfurt (Oder) 15236, Germany, Germany) |
| Title | Thermo-Mechanical and Electrical Stability of Decoupled Ge/Si Interface |
| Author | *Youcef A. Bioud (Fraunhofer Institute for Solar Energy Systems (ISE), Germany), Meriem Bouchilaoun (Univ. de Sherbrooke, Canada), Waldemar Schreiber (Fraunhofer Institute for Solar Energy Systems (ISE), Germany), Redouane Amrar (Univ. de Sherbrooke, Canada), Gilles Patriarche (Univ. Paris-Saclay, France), Stefan Janz (Fraunhofer Institute for Solar Energy Systems (ISE), Germany), Ali Soltani (Univ. de Sherbrooke, Canada) |
| Title | Strain Decoupling in Ge/Si via Selective Misfit-Network Etching |
| Author | *Youcef A. Bioud (Fraunhofer Institute for Solar Energy Systems (ISE), Germany), Meriem Bouchilaoun (Univ. de Sherbrooke, Canada), Waldemar Schreiber (Fraunhofer Institute for Solar Energy Systems (ISE), Germany), Redouane Amrar (Univ. de Sherbrooke, Canada), Gilles Patriarche (Univ. de Sherbrooke, France), Ali Soltani (Univ. de Sherbrooke, Canada), Stefan Janz (Fraunhofer Institute for Solar Energy Systems (ISE), Germany) |
| Title | Record-high hole mobility in compressively strained germanium on silicon |
| Author | *Maksym Myronov (Univ. of Warwick, UK), Sergei Studenikin (National Research Council of Canada, Canada) |
| Title | Evaluation of strain distribution around cracks in strained SiGe/Ge and the crack suppression through selective ion implantation |
| Author | *Ryota Mizoguchi, Keitaro Kato, Yuka Shibahara, Mayu Aikawa, Michihiro Yamada (Tokyo City Univ., Japan), Kohei Hamaya (Osaka Univ., Japan), Kentaro Sawano (Tokyo City Univ., Japan) |
| Title | Sb Delta Doping of Isotopically Purified Epitaxial 28Si for Nuclear High-Spin Qubits |
| Author | *El Bachir Ndiaye (Univ. de Sherbrooke/Polytechnique Montreal, Canada), Karim Omambac, Sebastian Koelling, Eloise Rahier, Simon Michel, Oussama Moutanabbir (Polytechnique Montreal, Canada), Eva Dupont-Ferrier (Univ. de Sherbrooke, Canada) |
| Title | Stable Structure Search and Statistical Analysis of Atomic Arrangements in SiGe, SiSn, and GeSn by DFT+GA Simulations |
| Author | *Hibiki Bekku (Okayama Prefectural Univ., Japan) |
| Title | Low Temperature Deposition of Germanium for Novel Device Applications |
| Author | *Andrea Besana, Stefano Calcaterra, Raffaele Giani, Afonso De Cerdeira Oliveira, Marco Faverzani, Daniel Chrastina (Politecnico di Milano, Italy), Emiliano Bonera (Univ. of Milano-Bicocca, Italy), Karí Martínez, Heiko Gross, Moritz Brehm (Johannes Kepler Univ. Linz, Austria), Giovanni Isella (Politecnico di Milano, Italy) |
| Title | Effect of Si Capping and Decapping on Lattice Strain in Submicron Ge Strip Structure on Si |
| Author | *Soki Matsushita, Joshua Chombo, Jose A. Piedra-Lorenzana, Takeshi Hizawa, Keisuke Yamane (Toyohashi Univ. of Tech., Japan), Donghwan Ahn (Kookmin Univ., Republic of Korea), Kazumi Wada (Massachusetts Inst. of Tech., USA), Yasuhiko Ishikawa (Toyohashi Univ. of Tech., Japan) |
| Title | Cost-Effective Liquid Phase Growth of SiGe Layer Using Screen-Printed Al-Ge Paste for Semiconductor Application |
| Author | *Sarah Alamri, Taruna Jupalli, Yuqing Li (Osaka Univ., Japan), Shota Suzuki, Meoko Matsubara, Ryo Nakao, Nozomu Kitamura, Hideaki Minamiyama (Toyo Aluminium, Japan), Marwan Dhamrin (Osaka Univ./Toyo Aluminium, Japan), Pierre Vinchon, Satoshi Hamaguchi (Osaka Univ., Japan) |
| Title | Sidewall Selective Epitaxy Technology for Source and Drain Fabrication in Complementary Transistor |
| Author | *Chu Chun Lin, Luo Guang-Li (Taiwan Semiconductor Research Institute, National Institutes of Applied Research, Taiwan), Hsu Shu-Han (Thammasat Univ., Thailand) |
| Title | Growth Kinetics and Thickness Uniformity During 200 mm Ge Epitaxy in Horizontal Flow Reactor |
| Author | *Andrey Smirnov, Yury Shustrov, Mila Simić (STR Belgrade, Serbia), Hyun-Su Jun, Xuan Sang Nguyen, Shiv Kumar, Navab Singh ("Institute of Microelectronics (IME)/Agency for Science, Technology and Research (A*STAR)", Singapore) |
| Title | Harnessing disilane for the low temperature growth of Si and SiGe |
| Author | *Jean-Michel HARTMANN, Justine LESPIAUX, Christophe LECOUVEY (CEA-LETI, France) |
| Title | 600 °C Selective Epitaxial Growth of SiGe:B for FD-SOI Devices |
| Author | *Justine Lespiaux, Joel Kanyandekwe, Valérie Lapras, Fabien Bringuier, Jean-Michel Hartmann (Univ. Grenoble Alpes, CEA-LETI, France) |
| Title | Effects of Annealing Temperature on the Photoluminescence Properties of Germanium Multiple Quantum Wells |
| Author | *Diana Ryzhak (IHP – Leibniz Institute for High Performance Microelectronics, Im Technologiepark 25, Frankfurt (Oder), 15236, Germany), Elena Campagna (Dipartimento di Scienze, Univ. Roma Tre, V.le G. Marconi 446, Roma, 00146, Italy), Yuji Yamamoto (IHP – Leibniz Institute for High Performance Microelectronics, Im Technologiepark 25, Frankfurt (Oder), 15236, Germany/Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan), Giovanni Capellini (IHP – Leibniz Institute for High Performance Microelectronics, Im Technologiepark 25, Frankfurt (Oder), 15236, Germany/Dipartimento di Scienze, Univ. Roma Tre, V.le G. Marconi 446, Roma, 00146, Italy), Marvin Hartwig Zoellner (IHP – Leibniz Institute for High Performance Microelectronics, Im Technologiepark 25, Frankfurt (Oder), 15236, Germany) |
| Title | Evaluation of Einstein Temperature on Bulk Single Crystal Si1-XGeX using X-ray Absorption Spectroscopy. |
| Author | *Takeshi Watanabe (JASRI, Japan), Yasutomo Arai (JAXA, Japan), Ryo Yokogawa (Meiji Univ., Japan), Ichiro Hirosawa (Kyushu Synchrotron Light Research Center, Japan), Atsushi Ogura (Meiji Univ., Japan) |
| Title | Fabrication of Large-Area SiGe/Si 6-Inch Substrates by Aluminum-Induced Crystallization of Screen-Printed Al-Ge Paste on Silicon |
| Author | *Moeko Matsubara, Ryo Nakao, Shota Suzuki, Hideaki Minamiyama (Toyo Aluminium K.K, Japan), Marwan Dhamrin (Osaka Univ., Japan) |
| Title | Integrated Pre-clean of SiGe Surfaces and Low-Temperature Epitaxial Growth for Advanced CMOS Logic Applications |
| Author | *Nicolas Breil, Manoj Vellaikal, Eric Davey, Xiaosong Ji, Renzhong Du (Applied Materials, USA) |
| Title | Temperature-Dependent Electronic Transport in Si/SiGe Field-Effect Stacks with Variable Quantum Well Depths |
| Author | *Felix Reichmann, Alberto Mistroni (IHP - Leibniz Institute for High Performance Microelectronics, Germany), Lino Visser (RWTH Aachen Univ., Germany), Marvin H. Zoellner (IHP - Leibniz Institute for High Performance Microelectronics, Germany), Giovanni Capellini (Univ. Roma Tre, Germany), Yuji Yamamoto, Marco Lisker (IHP - Leibniz Institute for High Performance Microelectronics, Germany), Vincent Mourik (RWTH Aachen Univ., Germany) |
| Title | Self-heating in electrically pumped SiGeSn lasers: a numerical study |
| Author | *Bernd Witzigmann (FAU Erlangen-Nürnberg, Germany), Agnieszka Corley-Wiciak, Cedric Corley-Wiciak (European Synchrotron Radiation Facility, France), Dan Buca (Forschungszentrum Juelich, Germany), Giovanni Capellini (IHP Frankfurt Oder, Germany) |
| Title | Ultra-high responsivity and large UV-visible-rejection-ratio in NiOx-gated AlGaN/GaN high-electron-mobility phototransistors |
| Author | *PINKI PAL, Sounak Samanta, Arnab Jain, apurba Laha, Suddhasatta Mahapatra (INDIAN INSTITUTE OF TECHNOLOGY BOMBAY, India) |
| Title | Planar direct bandgap hexagonal Ge |
| Author | *Ries Koolen (Eindhoven Univ. of Tech., Netherlands), Marcel Verheijen (Eindhoven Univ. of Tech./Eurofins Materials Science Netherlands, Netherlands), Erik Bakkers (Eindhoven Univ. of Tech., Netherlands) |
| Title | Direct Bandgap Group IV Hole Spin Qubits |
| Author | *Nicolas Rotaru, Patrick Del Vecchio, Oussama Moutanabbir (Polytechnique Montréal, Canada) |
| Title | Vertically stacked Co2MnSi/n-Ge/Co2MnSi structures for spintronic devices |
| Author | *Shimon Watahiki (Grad. Sch. Eng. Sci., The Univ. of Osaka., Japan), Shinya Yamada (Grad. Sch. Eng. Sci., The Univ. of Osaka./CSRN, The Univ. of Osaka./OTRI, The Univ. of Osaka., Japan), Sora Obinata (Grad. Sch. Eng. Sci., The Univ. of Osaka./CSRN, The Univ. of Osaka., Japan), Shuya Kikuoka, Michihiro Yamada, Kentarou Sawano (Tokyo City Univ., Japan), Kohei Hamaya (Grad. Sch. Eng. Sci., The Univ. of Osaka./CSRN, The Univ. of Osaka./OTRI, The Univ. of Osaka., Japan) |
| Title | Effect of Laser Irradiation on AlTeN Layers Characterized by Scanning Internal Photoemission Microscopy |
| Author | *Kenji Shiojima, Hiroki Imabayashi (Univ. of Fukui, Japan) |
| Title | A STUDY ON THE SYNERGISTIC EFFECTS OF OXYGEN PARTIAL PRESSURE, ANNEALING TEMPERATURE, AND WORKING PRESSURE ON THE CHANNEL CONDUCTION CHARACTERISTICS OF SNOX THIN FILM TRANSISTORS |
| Author | *Frederick Aziadzo, Jeong Sanghun, Yeon Joo Park, Minseung Gu, Sangyeob Lee (Hanbat National Univ., Republic of Korea) |
| Title | Sub-5 Nanometer Uniform High-κ Dielectric Growth on Amorphous Carbon Monolayer a van der Waals Interlayer for Ge-Based Electronics |
| Author | *Ashish A. Patil, Sanghyun Jeong, Minjae Sung, Dong Gyu An, Suhyeok Chae, Yeon Joo Park, Minseung Gu (Department of Materials Science and Engineering, Hanbat National Univ., Daejeon 34158, Republic of Korea) |
| Title | Two-dimensional characterization of micrometer-scale trench GaN JBS Diodes by scanning internal photoemission microscopy |
| Author | *Hiroki Imabayashi, Hiroto Suzuki, Haruto Yoshimura (Univ. of Fukui, Japan), Fumimasa Horikiri, Hiroshi Ohta, Tomoyoshi Mishima (Hosei Univ., Japan), Kenji Shiojima (Univ. of Fukui, Japan) |
| Title | Relationship between Remanent Polarization and Permittivity of HfO2/ZrO2 Nanolaminate Structure |
| Author | *Aoi Teshima (Aichi Inst. of Tech., Japan), Katsunori Makihara (Nagoya Univ., Japan), Yusuke Ichino, Yoshiyuki Seike, Tatsuo Mori, Noriyuki Taoka (Aichi Inst. of Tech., Japan) |
| Wednesday, November 12, 2025 |
| Title | (Plenary Talk) Epitaxial Processes for Advanced CMOS Logic and Memory Applications |
| Author | *Saurabh Chopra, Zuoming Zu, Yi-Chiau Huang, John Tolle, Abhishek Dube, Nicolas Breil (Applied Materials, USA) |
| Title | (Invited Talk) To be announced. |
| Author | *Jeewhan Kim (MIT) |
| Title | (Invited Talk) Facing the Interfaces – Perspectives towards Quasi-Monolithic-Integration |
| Author | *Andreas Mai, Ketan Anand (IHP, Germany) |
| Title | (Invited Talk) Advanced Epitaxy Applications in Memory Devices |
| Author | *Zuoming Zhu, Alexandros Anastasopoulos, Yuchong Gao, Erica de Leon Sanchez, Saloni Pendse, Maribel Maldonado-Garcia, Thomas Kirschenheiter, Atsuhiro Ogura, Erika Warrick, Awse Ma'aya, Ruiying Hao, Roya Baghi, Myungsun Kim, Arvind Kumar, Raghuveer Makala, Abhishek Dube (Applied Materials, USA) |
| Title | Epitaxial Growth of Strain Relaxed SiGe Layers with GeCl4 |
| Author | *Yosuke Shimura, Clement Porret, Danny Wan (imec, Belgium), Kristiaan De Greve (KU Leuven, Belgium), Roger Loo (imec/Ghent Univ., Belgium) |
| Title | Low-Temperature Selective Epitaxy of SiP Films |
| Author | *Jason Michael Jewell, Areum Kim, Yi-Chiau Huang (Applied Materials, Inc, USA) |
| Title | Low-Temperature Selective Co-Flow Epitaxial Growth of p (Boron) - Doped Silicon Germanium |
| Author | *Mengjing Wang, Areum Kim, Yi-Chiau Huang (Applied Materials, USA) |
| Title | (Invited Talk) Direct Bandgap Hexagonal SiGe Multiple Quantum Wells |
| Author | *Jos Haverkort (Eindhoven Univ. of Tech., Netherlands) |
| Title | Light emission from 4H-Ge nanowires |
| Author | *Riccardo Farina (Eindhoven Univ. of Tech., Netherlands), Hafssa Ameziane (Univ. Paris-Saclay, France), Victor van Lange (Eindhoven Univ. of Tech., Netherlands), Laetitia Vincent (Univ. Paris-Saclay, France), Jos Haverkort (Eindhoven Univ. of Tech., Netherlands) |
| Title | Demonstration of Ge0.8Sn0.2 Photodetectors Grown by Sputter Epitaxy towards Mid-Wave Infrared Applications |
| Author | *Rahmat Hadi Saputro (AIST, Japan), Tomo Tanaka (NEC, Japan), Hiroyuki Ishii (AIST, Japan), Kousaku Goto, Shigehisa Shibayama, Masashi Kurosawa, Osamu Nakatsuka (Nagoya Univ., Japan), Tatsuro Maeda (AIST, Japan) |
| Title | Improving the performance of GeSn infrared photodetectors on Si through nanoscale engineering |
| Author | Théophile Willoquet, Nicolas Pauc, Vincent Calvo (CEA Grenoble, IRIG, France), Jean-Michel Hartmann (CEA Grenoble, LETI, France), *Simone Assali (CEA Grenoble, IRIG, France) |
| Title | (Invited Talk) Group IV epitaxy for the 3D era of leading-edge logic and memory devices |
| Author | *Lutz Muehlenbein, Chenhui Yan, Kelvin Lu (ASM, USA) |
| Title | Ge Epitaxy on Si (001) using Halide-based Chemical Vapor Deposition |
| Author | *Ambrishkumar J. Devaiya (Peter Grünberg Institute-9 and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Jülich, 52428 Jülich, Germany/Institute of Inorganic and Materials Chemistry, Univ. of Cologne, 50939 Cologne, Germany, Germany), Omar Concepción (Peter Grünberg Institute-9 and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Jülich, 52428 Jülich, Germany, Germany), Clement Porret (Imec, Kapeldreef 75, 3001, Leuven, Belgium, Belgium), Daniel McDermott (Imec, Kapeldreef 75, 3001, Leuven, Belgium/IPVF, UMR 9006, CNRS, Ecole Polytechnique, PSL Université, Palaiseau, France, France), Andreas T. Tiedemann (Peter Grünberg Institute-9 and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Jülich, 52428 Jülich, Germany, Germany), Jinyoun Cho, Kristof Dessin (Umicore, Watertorenstraat 33, 2250 Olen, Belgium, Belgium), Sanjay Mathur (Institute of Inorganic and Materials Chemistry, Univ. of Cologne, 50939 Cologne, Germany, Germany), Detlev Grützmacher, Dan Buca (Peter Grünberg Institute-9 and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Jülich, 52428 Jülich, Germany, Germany), Roger Loo (Imec, Kapeldreef 75, 3001, Leuven, Belgium/Ghent Univ., Department of Solid-State Sciences, Krijgslaan 281, 9000 Ghent, Belgium, Belgium) |
| Title | Electrical Activity of Ge/Si Virtual Substrates |
| Author | *Henriette Tetzner (IHP, Germany), Agnieszka Anna Corley-Wiciak (ESRF, France), Ambrishkumar Devaiya, Omar Concepción, Dan Mihai Buca (Forschungszentrum Juelich, Germany), Yuji Yamamoto (Nagoya Univ., Germany), Giovanni Capellini (Univ. Roma Tre, Germany) |
| Title | Sputtering heteroepitaxy of Ge1−xSnx layers with various Sn contents reaching 25% on Si(001) substrates |
| Author | *Kousaku Goto, Shigehisa Shibayama, Mitsuo Sakashita, Masashi Kurosawa (Nagoya Univ., Japan), Osamu Nakatsuka (Nagoya Univ./IMaSS, Japan) |
| Title | (Invited Talk) Nanofabrication of Ferroelectric Independent-Double-Gate FinFET for Storage and Neuromorphic Applications |
| Author | *Darsen Lu (National Cheng Kung Univ., Taiwan) |
| Title | Photoluminescence Enhancement in Germanium All-dielectric Metasurfaces |
| Author | *Jon Schlipf, Diana Ryzhak (IHP - Leibniz Institute for High Performance Microelectronics, Germany), Paul Oleynik (BTU Cottbus-Senftenberg, Germany), Giovanni Capellini (IHP - Leibniz Institute for High Performance Microelectronics, Germany), Yuji Yamamoto (Nagoya Univ., Germany), Oliver Skibitzki (IHP - Leibniz Institute for High Performance Microelectronics, Germany), Inga A. Fischer (BTU Cottbus-Senftenberg / IHP - Leibniz Institute for High Performance Microelectronics, Germany) |
| Title | Ultra strong coupling in CMOS compatible semiconductor system based on n-type SiGe parabolic quantum wells |
| Author | *Luciana Di Gaspare, Elena Campagna, Enrico Talamas Simola (Univ. Roma Tre, Italy), Martin Zoellner (IHP - Leibniz Institute for High Performance Microelectronics, Germany), Giovanni Capellini (Dipartimento di Scienze, Univ. Roma Tre / IHP - Leibniz Institute for High Performance Microelectronics, Italy), Leonetta Baldassare (Dipartimento di Fisica, Sapienza Univ. di Roma, Italy), Fritz Berkmann (EFM Experimental Physics and Functional Materials, BTU Cottbus, Germany), Giuseppe Nicotra, Gianfranco Sfuncia (CNR-IMM, Italy), Maria Gambelli, Sara Cibella (CNR-IFN, Italy), Michele Virgilio (Dipartimento di Fisica, Univ. di Pisa, Italy), Giacomo Scalari (ETH Zurich, Switzerland), Michele Ortolani (Dipartimento di Fisica, Sapienza Univ. di Roma, Italy), Monica De Seta (Univ. Roma Tre, Italy) |
| Title | Towards fully integrated plasmonic enhanced hot carrier MIR Photo-Detectors |
| Author | *Fritz Berkmann, Ali Azimi (BTU Cottbus, Germany), Gulliermo Godoy Perez, Yonder Berence (Helmholtz Zentrum Dresden Rossendorf, Germany), Ing-Song Yu (National Dong Hwa Univ., Taiwan), Stefania Benedetti, Attigo Calzolari (CNR-Istituto Nanoscienze, Italy), Michele Ortolani, Leonetta Baldassarre (Sapienza Univ. of Rome, Italy), Inga Anita Fischer (BTU Cottbus, Germany) |
| Title | Defect Characterization in Monolithic Integrated Ge-on-Si Layers Grown by Low-Energy Plasma-Enhanced CVD |
| Author | *Afonso de Cerdeira Oliveira, Marco Faverzani, Raffaele Giani, Daniel Chrastina, Paolo Biagioni (Politecnico di Milano, Italy), Mohamed Zaghloul, Antonio Massimiliano Mio (Institute for Microelectronics and Microsystems (IMM)/Consiglio Nazionale delle Ricerche (CNR), Italy), Giovanni Isella (Politecnico di Milano, Italy) |
| Title | Trench-Filling Germanium Epitaxial Layers on Silicon for Surface-Illuminated Photodetectors |
| Author | *So Nozaki, Takumi Maeda, Jose A. Piedra-Lorenzana, Takeshi Hizawa (Toyohashi Univ. of Tech., Japan), Tetsuya Nakai (SUMCO, Japan), Yasuhiko Ishikawa (Toyohashi Univ. of Tech., Japan) |
| Title | Analysis of Low-Energy Localized Phonon Mode in SiGe Alloys by Molecular Dynamics Simulation |
| Author | *Taichi Miyagi, Yusuke Nishimura, Daisuke Namiki (Waseda Univ., Japan), Ryo Yokogawa (Meiji Renewable Energy Laboratory/Meiji Univ., Japan), Atsushi Ogura (Meiji Univ./Meiji Renewable Energy Laboratory, Japan), Takanobu Watanabe (Waseda Univ., Japan) |
| Title | Spectroscopic Ellipsometry Characterization of Ultra-thin Si layer sandwiched between SiGe layers for nano-sheet FET fabrication |
| Author | *Naoto Kumagai, Toshifumi Irisawa, Yoshihiro Hayashi (AIST, Japan) |
| Title | Metal organic chemical vapor deposition of crystalline Ge films on a flexible substrate |
| Author | *Shunsuke Furuya, Yuki Uriya, Kentarou Sawano, Michihiro Yamada (Tokyo City Univ., Japan) |
| Title | Effect of Annealing Conditions on SiGe Epitaxial Growth via Al-Induced Crystallization from Screen-Printed Al–Ge Source on Silicon Wafers |
| Author | *Yuqing Li, Jupalli Taruna Teja, Alamri Sarah (Osaka Univ., Japan), Suzuki Shota, Matsubara Moeko, Nakao Ryo, Kitamura Nozomu, Minamiyama Hideaki (Toyo Aluminium K.K, Japan), Dhamrin Marwan (Osaka Univ., Toyo Aluminium K.K, Japan) |
| Title | Defect Passivation by Post-Annealing for High-Mobility Sn-Doped Poly-Ge Thin Films on Insulator |
| Author | *Takuto Watanabe, Ryu Hashimoto, Takashi Kajiwara, Kenta Moto, Keisuke Yamamoto, Taizoh Sadoh (Kyushu Univ., Japan) |
| Title | Effect of wafer inclination on the surface morphology of SiGe grown on Si(110) wafers |
| Author | *Yuta Fujimoto, Monami Yokota (Center for Crystal Science and Technology, Univ. of Yamanashi, Japan), Naoyuki Wada, Akihiro Suzuki, Kazuhito Matsukawa, Koji Matsumoto, Hiroaki Yamamoto (SUMCO, Japan), Kosuke O Hara (NAIST, Japan), Junji Yamanaka, Keisuke Arimoto (Center for Crystal Science and Technology, Univ. of Yamanashi, Japan) |
| Title | Energetically Stable Structures of Ge−Sn Binary Alloy Investigated by Combinatorial Optimization Algorithm with First-Principles Calculation |
| Author | Yusuke Noda (Kyushu Inst. of Tech., Japan), Hibiki Bekku, *Koji Sueoka (Okayama Prefectural Univ., Japan) |
| Title | Epitaxial Growth of GexSn1-x On Ge-Buffered Gd2O3/Si (111), by Molecular Beam Epitaxy |
| Author | *Dhammapriy Gayakwad (Indian Inst. of Tech. Bombay, India), Hannah Genath, Jan Kruegener (Leibniz Univ. Hannover, Schneiderberg 32, Hanover, 30167, Germany), Apurba Laha, Suddhasatta Mahapatra (Indian Inst. of Tech. Bombay, India) |
| Title | Stable Atomic Configuration of SiSn, GeSn, and SiGe Crystals Investigated by DFT Covering All Independent Configurations |
| Author | *Koji Sueoka, Hibiki Bekku (Okayama Prefectural Univ., Japan), Yusuke Noda (Kyushu Inst. of Tech., Japan) |
| Title | CMOS-compatible Ge metasurface nanostructures with FTIR-validated resonance optimization |
| Author | *Wei-Han Chen, Jon Schlipf (Leibniz Institute for High Performance Microelectronics, Germany), Giovanni Capellini (Univ. Roma Tre, Italy), Paul Oleynik (Brandenburg Univ. of Tech., Germany), Diana Ryzhak (Leibniz Institute for High Performance Microelectronics, Germany), Yuji Yamamoto (Nagoya Univ., Japan), Wei-Chen Wen, Katarzyna Hnida-Gut, Christian Wenger (Leibniz Institute for High Performance Microelectronics, Germany), Inga A. Fischer (Brandenburg Univ. of Tech., Germany), Oliver Skibitzki (Leibniz Institute for High Performance Microelectronics, Germany) |
| Title | Lattice strain and Ge composition analysis of multilayered SiGe nanodots depending on the Si spacer growth temperature by X-ray diffraction |
| Author | *Rieko Suenaga (Meiji Univ./Rigaku, Japan), Yuta Ito (Meiji Univ./JSPS Research Fellow, Japan), Wei-Chen Wen, Yuji Yamamoto (Leibniz Institute for High Performance Microelectronics (IHP), Germany), Kazuhiko Omote (Rigaku, Japan), Atsushi Ogura (Meiji Univ., Japan) |
| Title | Liquid-Phase Epitaxy of SiGe Buffer Layers via Screen-Printed Al-Ge Pastes for Silicon-Based Applications |
| Author | *Taruna Teja Jupalli, Yuqing Li, Sarah Aalmri (Osaka Univ., Japan), Shota Suzuki, Moeko Matsubara, Ryo Nakao, Nozomu Kitamura, Hideaki Minamiyama (Toyo Aluminium K.K, Japan), Marwan Dhamrin (Osaka Univ., Toyo Aluminium K.K, Japan) |
| Title | Auto diffusion control in in-situ multilayer epitaxial growth |
| Author | *Arvind Kumar, Arkka Bhattacharyya, Zuoming Zhu, Abhishek Dube (Applied Materials, Inc, USA) |
| Title | Constant voltage driving current oscillation in the artificial graphene ribbon with deterministic chiral edges |
| Author | *Yan Zhan, Qiang Huang, Jingpu Yang, Wei Luo, Zuimin Jiang, Zhenyang Zhong (Fudan Univ. Department of Physics, China) |
| Title | Electronic Properties of Extended Defects in Germanium: a theoretical investigation |
| Author | *Veronica Regazzoni, Fabrizio Rovaris, Anna Marzegalli, Francesco Montalenti, Emilio Scalise (Univ. di Milano Bicocca, Italy) |
| Title | MOCVD-Grown InGaAs/GaAsP Superlattices for Short-Wave Infrared Photodetection grown on 4-inch GaAs substrates |
| Author | *Remy Tribout (STMicroelectronics, 850 rue Jean Monnet, 38920, Crolles, France/Univ. Grenoble Alpes, CNRS, CEA-LETI, MINATEC, Grenoble INP, LTM, Grenoble, F-38054 France/Univ. Grenoble Alpes, CEA-LETI, Grenoble, 38000 France, France), Alexis Palais (Univ. Grenoble Alpes, CEA-LETI, Grenoble, 38000 France, France), Mickael Martin, Badreddine Smiri, Driss Mouloua, Clara Cornille, Jeremy Moeyeart, Franck Bassani, Sébastien Cavalaglio (Univ. Grenoble Alpes, CNRS, CEA-LETI, MINATEC, Grenoble INP, LTM, Grenoble, F-38054 France, France), David Cooper, Charles Leroux, Romain Paquet, Jeremy Da Fonseca, Névine Rochat (Univ. Grenoble Alpes, CEA-LETI, Grenoble, 38000 France, France), Evan Oudot, Christophe Duluard (STMicroelectronics, 850 rue Jean Monnet, 38920, Crolles, France, France), Sophie Barbet, Christophe Jany (Univ. Grenoble Alpes, CEA-LETI, Grenoble, 38000 France, France), Thierry Baron (Univ. Grenoble Alpes, CNRS, CEA-LETI, MINATEC, Grenoble INP, LTM, Grenoble, F-38054 France, France) |
| Title | Room-temperature single-photon emission from InGaN quantum dots with sub-10-nm diameter, embedded in GaN nanowires |
| Author | *Suddhasatta Mahapatra (Indian Inst. of Tech. Bombay, India), Swagata Bhunia (Department of Electronic Systems, NTNU, NO-7491, Trondheim, Norway, Norway), Soumyadeep Chatterjee, Ayan Majumdar, Kasturi Saha, Apurba Laha (Indian Inst. of Tech. Bombay, India) |
| Title | Optical and Structural Analysis of Ge/SiGe Quantum Wells for Mid-Infrared Photonic Applications |
| Author | *Stefano Calcaterra, Marco Faverzani, Davide Impelluso, Daniel Chrastina, Raffaele Giani, Luca Anzi (Politecnico di Milano, Italy), Jin Hee Bae (Peter Grunberg Institute 9, Germany), Camillo Tassi (Dipartimento di Fisica, Univ. di Pisa, Italy), Dan Buca (Peter Grunberg Institute 9, Germany), Paolo Biagioni, Giovanni Isella (Politecnico di Milano, Italy), Michele Virgilio (Dipartimento di Fisica, Univ. di Pisa, Italy), Delphine Marris-Morini (Univ. Paris-Saclay/CNRS, France), Jacopo Frigerio (Politecnico di Milano, Italy) |
| Title | Optical Gain and Heat Management in Hex-SiGe Nanowires |
| Author | *Riccardo Farina, Marvin van Tilburg, Bohai Liu, Wiktor Kwapiński, Victor van Lange, Klaas-Jan Tielrooij, Erik Bakkers, Jos Haverkort (Eindhoven Univ. of Tech., Netherlands) |
| Title | Fabrication and evaluation of asymmetric metal/Ge/metal diodes with Al/Ge/ultra-thin thermally oxidized TiOx/Al structure |
| Author | *Genya Kuroeda, Yajun Feng, Keisuke Yamamoto, Dong Wang (Kyushu Univ., Japan) |
| Title | MBE growth of ferromagnetic Heusler Co2MnSi films on Sputtered Ge0.95Sn0.05(111) |
| Author | *Kento Yamaguchi (Department of Systems Innovation, Graduate School of Engineering Science, Univ. of Osaka, Japan), Shinya Yamada (Department of Systems Innovation, Graduate School of Engineering Science, Univ. of Osaka/Center for Spintronics Research Network, Graduate School of Engineering Science, Univ. of Osaka/Spintronics Research Network Division, Institute for Open and Transdisciplinary Research Initiatives, Univ. of Osaka, Japan), Ryo Ishikawa (ULVAC-Osaka Univ. Joint Research Laboratory for Future Technology, Univ. of Osaka, Japan), Kohei Hamaya (Department of Systems Innovation, Graduate School of Engineering Science, Univ. of Osaka/Center for Spintronics Research Network, Graduate School of Engineering Science, Univ. of Osaka/Spintronics Research Network Division, Institute for Open and Transdisciplinary Research Initiatives, Univ. of Osaka, Japan) |
| Title | Impact of Silicon Cap Layer and Gate Dielectric Variations on Electron Transport in Shallow Silicon Quantum Wells |
| Author | *Marco Lisker, Alberto Mistroni, Yuji Yamamoto, Felix Reichmann (IHP Frankfurt (Oder), Germany) |
| Title | Observation on Intra-grain Crystal Orientation Fluctuations in Cerium-doped Hydrogenated Indium Oxide Thin Film |
| Author | *Koya Kudo (Chiba Univ., Japan), Chia-Tsong Chen, Tatsuro Maeda (AIST, Japan) |
| Title | Low-Temperature Phase Transition and Defect Passivation in HZO FeRAM by High-Pressure SCF H2 Treatment |
| Author | *Yu-Hsiang Tsai, Ting-Chang Chang, Po-Hsun Chen (National Sun Yat-sen Univ., Taiwan) |
| Title | Ultra-Large Grain Si Thin Film on Insulator by Solid-Phase Crystallization Combined with Sn-Doping and Growth-Temperature Lowering |
| Author | *Shuma Akiyoshi, Yuki Hanafusa, Takashi Kajiwara, Taizoh Sadoh (Kyushu Univ., Japan) |
| Thursday, November 13, 2025 |
| Title | (Invited Talk) Efficient and Stable Activation by Microwave Annealing of Silicon Doped with Phosphorus above its Solubility Limit |
| Author | *James C. M. Hwang (Cornell Univ., USA) |
| Title | Pressure-Driven Surface Chemistry Shift in Si:P RPCVD: From Growth Inhibition to Catalysis |
| Author | *Frederic Gonzatti, Jean Michel Hartmann, Lazhar Saidi (Univ. Grenoble Alpes, CEA-LETI, France) |
| Title | Lateral Selective Vapor Phase Etching of SiGe Stacks by HCl |
| Author | *Wei-Chen Wen, Yi-Xian Wu, Marvin Hartwig Zoellner, Ioan Costina, Ketan Anand (IHP - Leibniz-Institut für innovative Mikroelektronik, Germany), Andreas Mai (IHP - Leibniz-Institut für innovative Mikroelektronik/Technical Univ. of Applied Science Wildau, Germany), Bernd Tillack (Tech. Univ. Berlin, Germany), Yuji Yamamoto (Nagoya Univ., Germany) |
| Title | Novel Ge Interface Passivation Method via H2 Cleaning and O3–N2H4 Oxidation for Reliable Multilayer High-κ Integration |
| Author | *Chien-Yu Liao, Kuan-I Wu, Shen-Yu Wang, Feng-Ting Wu, Yao-Jen Lee (National Yang Ming Chiao Tung Univ., Taiwan) |
| Title | (Invited Talk) Room Temperature Photoluminescence Detection of Defects on Si/SiGe Superlattice Samples |
| Author | *Tamás Sipőcz, Árpád Kerekes, Zoltán Tamás Kiss, Viktor Samu, Zoltán Lábszki (Semilab Semiconductor Physics Laboratory, Hungary) |
| Title | The effects of strain and content on Raman spectroscopy of Si1−xSnx alloy layers epitaxially grown on Si1−yGey buffer layers |
| Author | *Sosei Ito, Masashi Kurosawa (Nagoya Univ., Japan), Wei-Chen Wen, Yuji Yamamoto (IHP – Leibniz-Institut für innovative Mikroelektronik, Germany), Ryo Yokogawa, Atsushi Ogura (Meiji Univ., Japan), Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka (Nagoya Univ., Japan) |
| Title | Growth and Analysis of α-Sn/Ge Superlattice Structures |
| Author | *Michael Oehme (Univ. of Stuttgart, Germany), Abdulkadri Gengörü, Christian Spieth, Maurice Wanitzek, Daniel Schwarz, Alwin Daus (Univ. Stuttgart, IHT, Germany) |
| Title | On the interplay between strain and modulation doping in n-type Ge/SiGe heterostructures |
| Author | *Enrico Talamas Simola, Elena Campagna, Luciana Di Gaspare (Univ. Roma Tre, Italy), Fritz Berkmann (EFM Experimental Physics and Functional Materials, BTU Cottbus, Germany), Marvin H. Zoellner (IHP - Leibniz Institute for High Performance Microelectronics, Germany), Giovanni Capellini (Univ. Roma Tre, Germany), Michele Ortolani, Leonetta Baldassarre (Dipartimento di Fisica, Sapienza Univ. di Roma, Italy), Michele Virgilio (Dipartimento di Fisica “E. Fermi”, Univ. di Pisa, Italy), Monica De Seta (Univ. Roma Tre, Italy) |
| Title | (Invited Talk) Spin-orbit interactions of light holes in Ge/GeSn planar systems |
| Author | *Patrick Del Vecchio, Stefano Bosco (TU Delft, Netherlands), Daniel Loss (Univ. of Basel, Switzerland), Oussama Moutanabbir (Polytechnique Montréal, Canada) |
| Title | Hexagonal SiGe Quantum Structures Realized in Nanowires |
| Author | *Denny Lamon, Marvin Marco Jansen (Eindhoven Univ. of Tech., Netherlands), Marcel Verheijen (Eindhoven Univ. of Tech./ Eurofins Materials Science, Netherlands), Erik Bakkers (Eindhoven Univ. of Tech., Netherlands) |
| Title | Observation of spin transport in lateral spin-valve devices on GOI(111) |
| Author | *Kenji Oki, Kazuma Yoshinari (Univ. of Osaka, Japan), Shuya Kikuoka, Shu Yoshikawa (Tokyo City Univ., Japan), Shimon Watahiki, Sora Obinata, Azusa Hattori (Univ. of Osaka, Japan), Keisuke Yamamoto (Kumamoto Univ., Japan), Kentarou Sawano (Tokyo City Univ., Japan), Kohei Hamaya (Univ. of Osaka, Japan) |
| Title | Magnetoresistance Effect via Band-to-Band Tunneling at PN Junctions in Ge-based lateral spin-valve devices |
| Author | *Shinnosuke Ueda, Kenji Oki (Univ. of Osaka, Japan), Shuya Kikuoka (Tokyo City Univ., Japan), Shumpei Fujii, Sora Obinata, Takamasa Usami (Univ. of Osaka, Japan), Keisuke Yamamoto (Kumamoto Univ., Japan), Kentarou Sawano (Tokyo City Univ., Japan), Kohei Hamaya (Univ. of Osaka, Japan) |
| Title | Artificial Synapses and Neurons Based on Ferroelectric Transistors |
| Author | Andreas Grenmyr, Jiayuan Zhang, Yu-Tzu Liao, Kenta Moto, Jingxuan Sun, Detlev Grützmacher, *Qing-Tai Zhao (Forschungszentrum Juelich, Germany) |
| Title | Vertically Stacked Ge Nanosheets for Complementary Field-Effect Transistors Using a Wafer Bonding Technique |
| Author | *Fang-Jui Chu, Kai-En Chen (National Cheng Kung Univ., Taiwan), Wen-Hsin Chang, Tatsuro Maeda (Natl. Inst. of Adv. Indust. Sci. Tech. (AIST), Japan), Guang-Li Luo (Taiwan Semiconductor Research Institute, Japan), Yao-Jen Lee (National Yang Ming Chiao Tung Univ., Taiwan), Yeong-Her Wang (National Cheng Kung Univ., Taiwan) |
| Title | Low temperature SiGe:B source/drain epitaxy for CFET applications |
| Author | *Thomas Dursap, Clement Porret, Alex Merkulov, Paola Favia, Robert Langer, Min-Soo Kim, Naoto Horiguchi (Imec, Belgium), Roger Loo (Imec/Ghent Univ., Department of Solid State Sciences, Belgium) |
| Title | Characterization of a two-dimensional hole gas in a GeSn quantum well system |
| Author | *Prateek Kaul, Jan Karthein, Jonas Buchhorn (Peter Grünberg Institute – 9 (PGI-9) and JARA-Fundamentals of Future Information Technologies, Forschungzentrum Jülich, Jülich 52428, Germany/RWTH Aachen Univ. - 52062 Aachen, Germany, Germany), Taizo Kawano, Taisei Usubuchi, Jun Ishihara (Department of Materials Science and Engineering, Tohoku Univ., Japan, Japan), Nicolas Rotaru, Patrick del Vecchio (Department of Engineering Physics, École Polytechnique de Montréal, Montréal, Canada, Canada), Omar Concepcion, Detlev Gruetzmacher, Qing-Tai Zhao (Peter Grünberg Institute – 9 (PGI-9) and JARA-Fundamentals of Future Information Technologies, Forschungzentrum Jülich, Jülich 52428, Germany, Germany), Oussama Moutanabbir (Department of Engineering Physics, École Polytechnique de Montréal, Montréal, Canada, Canada), Makoto Kohda (Department of Materials Science and Engineering, Tohoku Univ., Japan, Japan), Thomas Schaepers (Peter Grünberg Institute – 9 (PGI-9) and JARA-Fundamentals of Future Information Technologies, Forschungzentrum Jülich, Jülich 52428, Germany/RWTH Aachen Univ. - 52062 Aachen, Germany/Department of Material Science and Engineering, Tohoku Univ., Japan, Germany), Dan Buca (Peter Grünberg Institute – 9 (PGI-9) and JARA-Fundamentals of Future Information Technologies, Forschungzentrum Jülich, Jülich 52428, Germany, Germany) |
| Title | (Invited Talk) Evaluation of Critical Thickness in SiGe/Si(110) Structures |
| Author | *Koji Usuda (Meiji Univ., Japan), Kiu Inami (Meiji Univ./AIST, Japan), Naoto Kumagai, Toshifumi Irisawa (National Institute of Advanced Industrial Science and Technology (AIST)/LSTC, Japan), Atsushi Ogura (Meiji Univ., Japan) |
| Title | I_3 defect mobility in hexagonal silicon germanium core shell nanowires |
| Author | *Mette Schouten, Wouter Peeters, Marvin Jansen (Eindhoven Univ. of Tech., Netherlands), Charles Renard (Centre de Nanosciences et de Nanotechnologies, France), Erik Bakkers, Marcel Verheijen (Eindhoven Univ. of Tech., Netherlands), Laetitia Vincent (Centre de Nanosciences et de Nanotechnologies, France) |
| Title | Observation of room temperature EL emission from strained SiGe/Ge quantum well LEDs on Ge-on-Insulator(111) |
| Author | *Shuya Kikuoka, Mayu Aikawa, Ryoga Yokoki, Nonoka Nagashima (Tokyo City Univ., Japan), Kenji Oki (Grad. Sch. Eng. Sci., The Univ. of Osaka, Japan), Kohei Hamaya (Grad. Sch. Eng. Sci., The Univ. of Osaka/CSRN, The Univ. of Osaka/OTRI, The Univ. of Osaka., Japan), Kentarou Sawano (Tokyo City Univ., Japan) |
| Title | Optimized Fabrication of High-Ge content (>80%) SGOI for Good-Quality Relaxed Ge Epitaxial Growth in NIR Photodetectors Development |
| Author | *Adonis Steve Takala (Aix Marseille Université, CNRS, Univ. de Toulon, IM2NP/STMicroelectronics Crolles, France), Olivier Gourhant, Christophe Duluard, Marvin Frauenrath, Jonathan Ma, Damien Monteil, Remy Tribout, Stephane Verdier, Caroline Lacomme, Julie Loche, Tony Printemps, Theo Levert, Ece Aybeke (STMicroelectronics Crolles, France), Ismail Madaci (Aix Marseille Université, CNRS, Univ. de Toulon, IM2NP, France), Anne-Flore Mallet (STMicroelectronics Crolles, France), Adam Arette-hourquet, Luc Favre, Isabelle Berbezier (Aix Marseille Université, CNRS, Univ. de Toulon, IM2NP, France) |
| Title | Well and barrier thickness dependences of light emissions for strained SiGe/Ge MQWs grown on Ge-on-Si(111) |
| Author | *Mayu Aikawa, Shuya Kikuoka, Ryota Mizoguchi (Tokyo City Univ., Japan), Sora Obinata (Grad. Sch. Eng. Sci., The Univ. of Osaka, Toyonaka, Osaka/CSRN, The Univ. of Osaka, Toyonaka, Osaka/OTRI, The Univ. of Osaka, Suita, Osaka, Japan), Michihiro Yamada (Tokyo City Univ., Japan), Kohei Hamaya (Grad. Sch. Eng. Sci., The Univ. of Osaka, Toyonaka, Osaka/CSRN, The Univ. of Osaka, Toyonaka, Osaka/OTRI, The Univ. of Osaka, Suita, Osaka, Japan), Sawano Kentarou (Tokyo City Univ., Japan) |
| Title | (Invited Talk) Application of Low-Temperature Defect Passivation Techniques in Advanced Semiconductor Materials and Devices |
| Author | *Po-Hsun Chen (I-Shou Univ., Taiwan), Ting-Chang Chang (National Sun Yat-sen Univ., Taiwan) |
| Title | Achieving Subthreshold Swing of 68.52 mV/dec and Ion/Ioff Ratio > 1010 of ALD In2O3 Thin-film Transistors by NF3/O2 Treatments for M3D Applications |
| Author | *Wen-Hsiang Lu (National Cheng Kung Univ., Taiwan), Kai-En Chiu, Muhammad Aslam, Tzu-Chieh Hong (National Yang Ming Chiao Tung Univ., Taiwan), Chien-Ting Wu (Taiwan Semiconductor Research Institute, Taiwan), Chia-Tsung Chen, Wen-Hsing Chang, Tatsuro Maeda (AIST, Japan), Yao-Jen Lee (National Yang Ming Chiao Tung Univ., Taiwan), Yeong-Her Wang (National Cheng Kung Univ., Taiwan) |
| Title | Study on Inversion Mode N-channel TFT on Polycrystalline Ge by Solid Phase Crystallization at Low Process Temperature |
| Author | *Linyu Huang (Kyushu Univ., Japan), Kota Igura, Kaoru Toko (Univ. of Tsukuba, Japan), Dong Wang, Keisuke Yamamoto (Kyushu Univ., Japan) |
| Title | Optimized SiGe Platforms for Mid-IR Photonic Integration |
| Author | *Davide Impelluso, Stefano Calcaterra, Marco Faverzani (Politecnico di Milano, Italy), Hamza Dely, Javier Huertas-Pedroche, Victor Turpaud, Delphine Marris-Morini (Univ. Paris-Saclay, France), Giovanni Isella, Jacopo Frigerio (Politecnico di Milano, Italy) |
| Title | Capacitance Modeling of Off-State Leakage Effects in Ge(Sn) n-MOSFETs |
| Author | *Yen-Yang Chen, Kai-Ying Tien, Wei-Hsiang Kao, Chia-You Liu, Yi-Pei Lin, Muskan Sangal (National Taiwan Univ., Taiwan), Jiun-Yun Li (National Taiwan Univ./Taiwan Semiconductor Research Institute, Taiwan) |
| Title | (Invited Talk) 300 mm production compatible fabrication of quantum computing devices |
| Author | *Stefan Kubicek, Sofie Beyne, Sugandha Sharma, Shana Massar, Clement Godfrin (IMEC, Belgium) |
| Title | (Invited Talk) Spin qubits in isotope pure 28Si/SiGe molecular beam epitaxy quantum well heterostructures |
| Author | *Dominique Bougeard (Fakultät für Physik, Univ. Regensburg, Germany) |
| Title | Isotopically pure 70Ge/28Si70Ge heterostructures grown on SiGe-buffered Si wafers |
| Author | *Patrick Daoust, Nicolas Rotaru, Alexis Dubé-Valade, Sebastian Koelling, Éloise Rahier, Patrick Del Vecchio (Polytechnique Montréal, Canada), Debojyoti Biswas, Marcus Edwards, Mukhlasur Tanvir, Ebrahim Sajadi, Joseph Salfi (Univ. of British Columbia, Canada), Oussama Moutanabbir (Polytechnique Montréal, Canada) |
| Title | Epitaxy of Ge/SiGe 2D hole gases for quantum electronics |
| Author | *Jean-Michel HARTMANN, Nicolas BERNIER, Estelle CHANEL-PETITJEAN, Benoit BERTRAND, Matteo ORLANDONI (CEA-LETI, France), Vivien SCHMITT, Silvano DE FRANCESCHI (CEA-IRIG, France) |