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The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and
the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)

Session A6  SiGe/Ge Epitaxy II
Time: 10:50 - 12:10 Tuesday, June 4, 2013
Chairs: Wei-Xin Ni (Linköping Univ., Sweden), A. Delabie (IMEC, Belgium)

A6-1 (Time: 10:50 - 11:10)
TitleCoherent Lateral-Growth of Ge over Insulating Film by Rapid-Melting-Crystallization
Author*Taizoh Sadoh, Masashi Kurosawa, Kaoru Toko, Masanobu Miyao (Kyushu Univ., Japan)
Pagepp. 39 - 40

A6-2 (Time: 11:10 - 11:30)
TitleExploring the Potentiality of Disilane for the Very Low Temperature Epitaxy of SiGe
Author*Jean-Michel Hartmann, Veronique Benevent, Marc Veilllerot (CEA-LETI, Minatec Campus, Grenoble, France), Aomar Halimaoui (STMicroelectronics, Crolles, France)
Pagepp. 41 - 42

A6-3 (Time: 11:30 - 11:50)
TitleDynamics Analysis of Rapid-Melting Growth using SiGe on Insulator
Author*Ryo Matsumura, Yuki Tojo, Masashi Kurosawa, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ., Japan)
Pagepp. 43 - 44

A6-4 (Time: 11:50 - 12:10)
TitleInfluence of Growth Temperature on Strain Relaxation of Thin Ge Films on Si(001) Grown by Carbon-Mediated Epitaxy
Author*Dominic Tetzlaff, Tobias F. Wietler, Eberhard Bugiel, H. Jörg Osten (Leibniz Univ. Hannover, Germany)
Pagepp. 45 - 46