Title | (Invited Paper) Strained Ge Heterostructures for Infrared and THz Light Emission |
Author | *Giovanni Capellini (Univ. degli Studi Roma Tre, Italy/IHP, Germany), M. De Seta (Univ. degli Studi Roma Tre, Italy), C. Reich, Y. Yamamoto, B. Tillack (IHP, Germany), M. El Kurdi, P. Boucaud (CNRS-Univ. Paris-Sud, France), M. Virgilio (Univ. di Pisa, Italy), M. Ortolani (Univ. di Roma La Sapienza, Italy), T. Schroeder (IHP, Germany) |
Page | pp. 13 - 14 |
Title | Effect of Heavy Doping and Strain on the Electroluminescence of Ge-on-Si LEDs |
Author | *Marc Schmid, Michael Oehme, Martin Gollhofer, Roman Körner, Mathias Kaschel, Erich Kasper, Joerg Schulze (Univ. Stuttgart, Germany) |
Page | pp. 15 - 16 |
Title | Characterization of Electroluminescence from Self-Aligned Si-Based Quantum Dots Stack by Intermittent Bias Application |
Author | *Katsunori Makihara, Hiroki Takami, Yoshihiro Suzuki (Nagoya Univ., Japan), Mitsuhisa Ikeda (Hiroshima Univ., Japan), Seiichi Miyazaki (Nagoya Univ., Japan) |
Page | pp. 17 - 18 |
Title | Microdisk Enhanced Photodetector Based on Ge Self-Assembled Quantum Dots on SOI |
Author | *Xuejun Xu, Taichi Chiba, Takuya Maruizumi, Yasuhiro Shiraki (Tokyo City Univ., Japan) |
Page | pp. 19 - 20 |
Title | (Invited Paper) CMOS Ge LASER: a Bridge to the Optical Network |
Author | *Rodolfo Camacho-Aguilera, Yan Cai, Lionel C. Kimerling, Jurgen Michel (Massachusetts Inst. of Tech., U.S.A.) |
Page | pp. 21 - 22 |