24th International Conference on
Amorphous and Nanocrystalline Semiconductors (ICANS 24)
Technical Program

Remark: The presenter of each paper is marked with "*".

Technical Program: One Page (Not Separated) version

Author Index: HERE

Session Schedule

Monday, August 22, 2011

Room 1	Room 2	Room 3
Op Opening 9:00 - 9:20
Me Memorial 9:20 - 9:40
ML Mott Lecture 9:40 - 10:40
Coffee Break 10:40 - 11:00
1A1 Si Photovoltaics Production 11:00 - 12:00	1B1 Oxide Electrical and Optical Properties I 11:00 - 12:00	1C1 Chalcogenide Metastability 11:00 - 12:00
Lunch 12:00 - 13:20
1A2 Si Photovoltaics Device Physics 13:20 - 15:00	1B2 Oxide Electrical and Optical Properties II 13:20 - 15:00	1C2 Si New Materials 13:20 - 15:00
Coffee Break 15:00 - 15:20
1A3 Si Photovoltaics Devices 15:20 - 17:00	1B3 Si Electrical and Optical Properties 15:20 - 17:00	1C3 Organics I 15:20 - 17:00
Coffee Break 17:00 - 17:20
1A4 Nano-Si Preparation I 17:20 - 19:00	1B4 Si Quantum Structures I 17:20 - 19:00	1C4 Chalcogenide Detectors 17:20 - 19:00

Tuesday, August 23, 2011

Room 1	Room 2	Room 3
2A1 Si Microstructures I 9:00 - 10:20	2B1 Oxide Electrical and Optical Properties III 9:00 - 10:20	2C1 Si Quantum Structures II 9:00 - 10:20
Coffee Break 10:20 - 10:40
2A2 Si Microstructures II 10:40 - 12:00	2B2 Oxide TFT I 10:40 - 12:00	2C2 Organics II 10:40 - 12:00
Lunch 12:00 - 13:20
2A3 Si Photovoltaics Heterojunction I 13:20 - 15:00	2B3 Chalcogenide Phase Change I 13:20 - 15:00	2C3 Organics III 13:20 - 15:00
Coffee Break 15:00 - 15:20
2A4 Si Photovoltaics Heterojunction II 15:20 - 17:00	2B4 Chalcogenide Phase Change II 15:20 - 17:00	2C4 Nanostructure and Nitride 15:20 - 17:00
Coffee Break 17:00 - 17:20
Japanese Traditional Dance and Music (Gagaku) & Traditional Masked Dance-drama (Noh) (Room 1) 17:20 - 18:00
P1 (Reception Hall) Poster I 18:00 - 19:40

Wednesday, August 24, 2011

Room 1	Room 2	Room 3
3A1 Si Photovoltaics Device Characterization 9:00 - 10:20	3B1 Carbon Related Materials 9:00 - 10:20	3C1 Chalcogenide Electrical and Optical Properties I 9:00 - 10:20
Coffee Break 10:20 - 10:40
3A2 Si Photovoltaics Novel Structure 10:40 - 12:00	3B2 Oxide TFT II 10:40 - 12:00	3C2 Chalcogenide Electrical and Optical Properties II 10:40 - 12:00
Conference Excursion 12:00 - 17:00
Conference Banquet (Hiten, Hotel Nikko Nara) 18:00 - 20:00

Thursday, August 25, 2011

Room 1	Room 2	Room 3
4A1 Si Transport Properties 9:00 - 10:20	4B1 Si Devices 9:00 - 10:20	4C1 Oxide Devices I 9:00 - 10:20
Coffee Break 10:20 - 10:40
4A2 Si Metastability 10:40 - 12:00	4B2 Poly-Si Preparation I 10:40 - 12:00	4C2 Oxide Devices II 10:40 - 12:00
Lunch 12:00 - 13:20
4A3 Si Light Management I 13:20 - 15:00	4B3 Poly-Si Preparation II 13:20 - 15:00	4C3 Nano-Si Structure 13:20 - 15:00
Coffee Break 15:00 - 15:20
4A4 Si Light Management II 15:20 - 17:00	4B4 Chalcogenide Structure 15:20 - 17:00	4C4 Nano-Si Characterization 15:20 - 17:00
Coffee Break 17:00 - 17:20
P2 (Reception Hall) Poster II 17:20 - 19:00

Friday, August 26, 2011

Room 1	Room 2	Room 3
5A1 Si Microstructure III 9:00 - 10:20	5B1 Nano-Si Preparation II 9:00 - 10:20
Break 10:20 - 10:30
Cl Closing 10:30 - 11:00

List of Papers

Remark: The presenter of each paper is marked with "*".

Monday, August 22, 2011

Session Me Memorial
Time: 9:20 - 9:40 Monday, August 22, 2011
Location: Room 1
Chair: S. Wagner (Princeton Univ., U.S.A.)

Me-1, ID 1351 (Time: 9:20 - 9:30)

Title	(Memorial) Prof. Josef Stuke Memorial
Author	*Martin Stutzmann (Technische Universitaet Muenchen, Germany)

Me-2, ID 1352 (Time: 9:30 - 9:40)

Title	(Memorial) Prof. Jan Tauc Memorial
Author	*Bedrich Velicky (Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i., Czech Republic)

Session ML Mott Lecture
Time: 9:40 - 10:40 Monday, August 22, 2011
Location: Room 1
Chair: H. Naito (Osaka Prefecture Univ., Japan)

ML-1, ID 1237 (Time: 9:40 - 10:40)

Title	(Mott Lecture) Relation of Defects and Grain Boundaries to Transport and Photo-Transport: Solved and Unsolved Problems in Microcrystalline Silicon
Author	*Jan Kočka (Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i., Czech Republic)
Page	p. 1

Session 1A1 Si Photovoltaics Production
Time: 11:00 - 12:00 Monday, August 22, 2011
Location: Room 1
Chair: M. Kondo (AIST, Japan)

1A1-1, ID 1116 (Time: 11:00 - 11:20)

Title	High Quality Amorphous Si Solar Cells for Large Area Mass Production Micromorph Tandem Cells
Author	*Marian Fecioru-Morariu, Bogdan Mereu, Sylvie Bakehe, Jiri Kalas, Markus Kupich, Oliver Kluth, Thomas Eisenhammer (OC Oerlikon Solar, Switzerland)
Page	p. 2

1A1-2, ID 1215 (Time: 11:20 - 11:40)

Title	Development of High Conversion Efficiency a-Si/µc-Si Tandem Solar Panel (1,100 × 1,400 mm²) with High Deposition Rate of µc-Si Film
Author	*Hirotaka Kaku, Mitsuhiro Matsumoto, Youichirou Aya, Isao Yoshida, Akinao Kitahara, Akira Terakawa, Masahiro Iseki (SANYO Electric Co. Ltd., Japan)
Page	p. 3

1A1-3, ID 1100 (Time: 11:40 - 12:00)

Title	Inline Deposited Thin-Film Silicon Solar Cells on Imprinted Foil Using Linear PECVD Sources
Author	*Bas B. Van Aken, Jochen Loffler, Maurits C.R. Heijna, Wim J. Soppe (ECN Solar Energy, Netherlands)
Page	p. 4

Session 1A2 Si Photovoltaics Device Physics
Time: 13:20 - 15:00 Monday, August 22, 2011
Location: Room 1
Chair: R. E. I. Schropp (Utrecht Univ., Netherlands)

1A2-1, ID 1205 (Time: 13:20 - 13:40)

Title	Charge Collection in Amorphous Silicon Solar Cells: Cell Analysis and Simulation of High Efficiency pin Devices
Author	*Michael Stuckelberger, Brice Perruche, Yannick Riesen, Matthieu Despeisse, Arvind Shah, Christophe Ballif (Ecole Polytechnique Fédérale de Lausanne, Switzerland)
Page	p. 5

1A2-2, ID 1303 (Time: 13:40 - 14:00)

Title	Recombination Efficiency in a-Si:H p-i-n Devices
Author	*René van Swaaij, Renske Kind, Miro Zeman (Delft Univ. of Tech., Netherlands)
Page	p. 6

1A2-3, ID 1141 (Time: 14:00 - 14:20)

Title	Drift-Mobility Evaluation of Thin-Film Silicon Solar Cells Using Photocapacitance
Author	*J.-K. Lee (Chonbuk National Univ., Republic of Korea), S. Dinca, E. A. Schiff (Syracuse Univ., U.S.A.), B. Yan, J. Yang, S. Guha (United Solar Ovonic, U.S.A.)
Page	p. 7

1A2-4, ID 1227 (Time: 14:20 - 14:40)

Title	Variation of the Defect Density in a-Si:H and µc-Si:H based Solar Cells with 2MeV Electron Bombardment
Author	*Oleksandr Astakhov, Vladimir Smirnov, Reinhard Carius (Forschungszentrum Jülich GmbH, Germany), Yuri Petrusenko, Valeriy Borysenko (National Science Center - Kharkov Institute of Physics & Technology, Ukraine), Wanjiao Böttler, Friedhelm Finger (Forschungszentrum Jülich GmbH, Germany)
Page	p. 8

1A2-5, ID 1322 (Time: 14:40 - 15:00)

Title	Multi-Frequency EDMR on Thin-Film Solar Cells
Author	*Christian Teutloff, Christoph Meier, Jan Behrends (Freie Univ. Berlin, Germany), Alexander Schnegg, Klaus Lips (Helmholtz-Zentrum Berlin für Materialien und Energie, Germany), Robert Bittl (Freie Univ. Berlin, Germany)
Page	p. 9

Session 1A3 Si Photovoltaics Devices
Time: 15:20 - 17:00 Monday, August 22, 2011
Location: Room 1
Chair: Tsvetelina Merdzhanova (Jülich, Germany)

1A3-1, ID 1217 (Time: 15:20 - 15:40)

Title	Effect of Inter-Electrode Distances on a-SiGeC:H Thin Films and Solar Cells by Using Monomethyl Germane as a Germanium Source
Author	*Do Yun Kim, Tomohiro Yoshihara, Sichanugrist Porponth, Makoto Konagai (Tokyo Inst. of Tech., Japan)
Page	p. 10

1A3-2, ID 1076 (Time: 15:40 - 16:00)

Title	Improvement of a-SiGe:H Single Junction Thin-Film Solar Cell Performance by Bandgap Profiling Techniques
Author	*Hung-Jung Hsu, Cheng-Hang Hsu, Chien-Ming Wang, Chuang-Chuang Tsai (National Chiao Tung Univ., Taiwan)
Page	p. 11

1A3-3, ID 1049 (Time: 16:00 - 16:20)

Title	Nanocrystalline Si/Amorphous (Si,Ge) Superlattice Solar Cells
Author	*Vikram Dalal, Nayan Chakravarty, Sambit Pattnaik (Iowa State Univ., U.S.A.)
Page	p. 12

1A3-4, ID 1142 (Time: 16:20 - 16:40)

Title	Low Temperature Plasma Deposition of Silicon Thin Films: from Amorphous to Crystalline
Author	*Pere Roca i Cabarrocas, Romain Cariou (Ecole Polytechnique, France), Martin Labrune (Total S.A, France)
Page	p. 13

1A3-5, ID 1324 (Time: 16:40 - 17:00)

Title	Thin Film Silicon Solar Cells on Commercial Tiles
Author	Hugo Aguas, Andreia Cardoso, *Sergej Filonovich, Diana Gaspar, Antonio Vicente, Tiago Mateus, Sanjay Ram, Isabel Ferreira, Elvira Fortunato, Rodrigo Martins (Univ. Nova de Lisboa, Portugal)
Page	p. 14

Session 1A4 Nano-Si Preparation I
Time: 17:20 - 19:00 Monday, August 22, 2011
Location: Room 1
Chair: S. Miyazaki (Nagoya Univ., Japan)

1A4-1, ID 1240 (Time: 17:20 - 17:40)

Title	Microcrystalline Silicon Oxide (μc-SiOx:H) Alloys: A Versatile Material for Application in Thin Film Silicon Single and Tandem Junction Solar Cells
Author	*Vladimir Smirnov, Andreas Lambertz, Björn Grootoonk, Reinhard Carius, Friedhelm Finger (Forschungszentrum Jülich GmbH, Germany)
Page	p. 15

1A4-2, ID 1239 (Time: 17:40 - 18:00)

Title	Boron-Doped Silicon Oxide with a Nanocrystalline Si Phase Used as Window Layer for High Voc Amorphous Silicon n-i-p Solar Cells
Author	*Rémi Biron, Céline Pahud, Franz-Josef Haug, Jordi Escarre Palou, Karin Söderström, Christophe Ballif (Ecole Polytechnique Fédérale de Lausanne, Switzerland)
Page	p. 16

1A4-3, ID 1032 (Time: 18:00 - 18:20)

Title	P-Type Hydrogenated Amorphous Silicon Oxide Containing a Microcrystalline Silicon Phase for Application in Thin-Film Silicon Solar Cells
Author	*Andreas Lambertz, Friedhelm Finger (Forschungszentrum Jülich GmbH, Germany), Ruud Schropp (Utrecht Univ., Netherlands)
Page	p. 17

1A4-4, ID 1048 (Time: 18:20 - 18:40)

Title	Effect of Thermal Annealing and Hydrogen-Plasma Treatment in Boron-Doped Microcrystalline Silicon
Author	*Yasushi Sobajima, Shirou Kamanaru, Hirotaka Muto, Jakapan Chantana, Chitose Sada, Akihisa Matsuda, Hiroaki Okamoto (Osaka Univ., Japan)
Page	p. 18

1A4-5, ID 1104 (Time: 18:40 - 19:00)

Title	The Growth of Microcrystalline Silicon Solar Cells Monitored by In-Situ Raman Spectroscopy
Author	Stefan Muthmann, *Florian Koehler, Matthias Meier, Markus Huelsbeck, Reinhard Carius, Aad Gordijn (Forschungszentrum Jülich GmbH, Germany)
Page	p. 19

Session 1B1 Oxide Electrical and Optical Properties I
Time: 11:00 - 12:00 Monday, August 22, 2011
Location: Room 2
Chair: Yasufumi Fujiwara (Osaka Univ., Japan)

1B1-1, ID 1041 (Time: 11:00 - 11:40)

Title	(Invited Paper) Electronic Properties of Amorphous Semiconducting Oxides
Author	*John Robertson, Roland Gillen (Cambridge Univ., U.K.), Stewart Clark (Durham Univ., U.K.)
Page	p. 20

1B1-2, ID 1015 (Time: 11:40 - 12:00)

Title	Electride Glass: Amorphous Semiconductor based on Interstitial Electrons
Author	*Hideo Hosono, Sung Wng Kim (Tokyo Inst. of Tech., Japan)
Page	p. 21

Session 1B2 Oxide Electrical and Optical Properties II
Time: 13:20 - 15:00 Monday, August 22, 2011
Location: Room 2
Chair: Paz Carreras (Univ. de Barcelona, Spain)

1B2-1, ID 1225 (Time: 13:20 - 13:40)

Title	Structural Relaxation and Glass Transition in Amorphous Oxide Semiconductor, a-In-Ga-Zn-O
Author	*Keisuke Ide, Kenji Nomura, Toshio Kamiya, Hideo Hosono (Tokyo Inst. of Tech., Japan)
Page	p. 22

1B2-2, ID 1307 (Time: 13:40 - 14:00)

Title	White Light Emission of Rare Earth-Free MnO-SnO-ZnO-P₂O₅ Glass
Author	*Hirokazu Masai (Kyoto Univ., Japan), Takumi Fujiwara (Tohoku Univ., Japan), Syuji Matsumoto (Asahi Glass Co.Ltd., Japan), Yoshihiro Takahashi (Tohoku Univ., Japan), Yomei Tokuda, Toshinobu Yoko (Kyoto Univ., Japan)
Page	p. 23

1B2-3, ID 1286 (Time: 14:00 - 14:20)

Title	Photoluminescence Properties of Sm-Doped ZnO Grown by Sputtering-Assisted MOCVD
Author	*Takahiro Tsuji, Yoshikazu Terai, Muhammad Hakim Kamarudin, Masatoshi Kawabata, Yasufumi Fujiwara (Osaka Univ., Japan)
Page	p. 24

1B2-4, ID 1133 (Time: 14:20 - 14:40)

Title	Preparation of High-Quality Textured ZnO:Al Films at Room Temperature Using Excimer Laser Annealing and Chemical Etching
Author	*Erik V Johnson, Coralie Charpentier (Ecole Polytechnique, France), Patricia Prod'homme (TOTAL S.A. - Gas & Power, R&D Division, France), Celia Boniface, Karim Huet (Process & Application Team, EXCICO France SAS, France), Jean-Francois Lerat, Thierry Emeraud (PV Business Unit, EXCICO Group NV, Belgium), Pere Roca i Cabarrocas (Ecole Polytechnique, France)
Page	p. 25

1B2-5, ID 1169 (Time: 14:40 - 15:00)

Title	Elucidation of Codoping Effect in Cu²⁺-Containing Sodium Borate Glass
Author	*Fuji Funabiki, Satoru Matsuishi, Hideo Hosono (Tokyo Inst. of Tech., Japan)
Page	p. 26

Session 1B3 Si Electrical and Optical Properties
Time: 15:20 - 17:00 Monday, August 22, 2011
Location: Room 2
Chair: Christophe Longeaud (Laboratoire de Genie, France)

1B3-1, ID 1145 (Time: 15:20 - 15:40)

Title	Thermal Quenching of Defect Photoluminescence and Recombination Rates of Electron-Hole Pairs in a-Si:H
Author	*Chisato Ogihara, Yuta Inagaki, Akinori Taketa (Yamaguchi Univ., Japan), Kazuo Morigaki (Hiroshima Inst. of Tech., Japan)
Page	p. 27

1B3-2, ID 1287 (Time: 15:40 - 16:00)

Title	Space Charge Capacitance Spectroscopy in Amorphous Silicon Schottky Diodes: Theory, Modeling, and Experiments
Author	*Olga Maslova, Marie Estelle Gueunier-Farret, José Alvarez (Laboratoire de Génie Electrique de Paris, France), Alexandre Gudovskikh (Russian Academy of Sciences, Russian Federation), Eugene Terukov (A.F. Ioffe Physico-technical Institute, Russian Federation), Jean-Paul Kleider (Laboratoire de Génie Electrique de Paris, France)
Page	p. 28

1B3-3, ID 1346 (Time: 16:00 - 16:20)

Title	On the Application of a Dimensionless Joint Density of States Formalism for Quantitative Characterization of the Optical Response of Hydrogenated Amorphous Silicon: A Review
Author	Jasmin J. Thevaril (Univ. of Windsor, Canada), *Stephen K. O'Leary (Univ. of British Columbia, Canada)
Page	p. 29

1B3-4, ID 1058 (Time: 16:20 - 16:40)

Title	Comparative Study of Electro-Luminescence from Annealed Amorphous SiCx Single Layer and Amorphous Si/SiC Multilayer
Author	Yunjun Rui, Shuxin Li, *Jun Xu, Yunqing Cao, Xiaofan Jiang, Wei Li, Kunji Chen (Nanjing Univ., China)
Page	p. 30

1B3-5, ID 1092 (Time: 16:40 - 17:00)

Title	Enhanced Spectral Response by Silicon Nitride Index Matching Layer in Amorphous Silicon Thin-Film Solar Cells
Author	*C.H. Hsu, Y.P. Lin, H.J. Hsu, C.K. Chuang, C.C. Tsai (National Chiao Tung Univ., Taiwan), C.C. Bi, C.H. Lu, C.H. Yeh (NexPower Technology Corp., Taiwan)
Page	p. 31

Session 1B4 Si Quantum Structures I
Time: 17:20 - 19:00 Monday, August 22, 2011
Location: Room 2
Chair: Katerina Kusova (Czech, Academy of Sci., Czech Republic)

1B4-1, ID 1188 (Time: 17:20 - 17:40)

Title	Single-Electron Transport in Silicon and Germanium Nanowires
Author	*Sung-Kwon Shin (Tokyo Inst. of Tech., Japan), Shaoyun Huang (RIKEN, Japan), Naoki Fukata (NIMS, Japan), Koji Ishibashi (RIKEN, Japan)
Page	p. 32

1B4-2, ID 1031 (Time: 17:40 - 18:00)

Title	Generating Ordered Si Nanocrystals via Atomic Force Microscopy
Author	*Bohuslav Rezek, Elisseos Verveniotis, Emil Šípek, Jiří Stuchlík, Martin Ledinský, Jan Kočka (Institute of Physics ASCR, Czech Republic)
Page	p. 33

1B4-3, ID 1037 (Time: 18:00 - 18:20)

Title	High-Density Carrier Dynamics in Ge/Si Quantum Dots Studied by Time-Resolved Photoluminescence Spectroscopy
Author	Takeshi Tayagaki, *Kei Ueda (Kyoto Univ., Japan), Susumu Fukatsu (Univ. of Tokyo, Japan), Yoshihiko Kanemitsu (Kyoto Univ., Japan)
Page	p. 34

1B4-4, ID 1256 (Time: 18:20 - 18:40)

Title	Self-Aggregated Si Nanocrystals in Amorphous Si-Rich SiC
Author	Tzu-Chieh Lo, *Ling-Hsuan Tsai, Chih-Hsien Cheng, Yi-Hao Pai, Po-Sheng Wang, Chih-I Wu, Gong-Ru Lin (National Taiwan Univ., Taiwan)
Page	p. 35

1B4-5, ID 1260 (Time: 18:40 - 19:00)

Title	Si Nanocrystals Embedded Si-Rich Si_xC_1-x Lighting Emitting Diodes
Author	*Chi-Hsing Hsu, Chun-Chieh Chen, Chih-Hsien Cheng, Gong-Ru Lin (National Taiwan Univ., Taiwan)
Page	p. 36

Session 1C1 Chalcogenide Metastability
Time: 11:00 - 12:00 Monday, August 22, 2011
Location: Room 3
Chair: Adam Lőrinczi (National Institute of Materials Physics, Romania)

1C1-1, ID 1021 (Time: 11:00 - 11:20)

Title	Photoinduced Macroscopic Vector Deformations in Chalcogenide Glasses
Author	*Keiji Tanaka, Masatoshi Mikami (Hokkaido Univ., Japan)
Page	p. 37

1C1-2, ID 1128 (Time: 11:20 - 11:40)

Title	Photoinduced Mass Transport in Amorphous Chalcogenide and Organic Polymer Films
Author	*Janis Teteris, Jelena Aleksejeva, Ugis Gertners (Univ. of Latvia, Latvia)
Page	p. 38

1C1-3, ID 1321 (Time: 11:40 - 12:00)

Title	Comparison of Photocrystallization in Rigid and Flexible a-Se Films
Author	Robert Tallman, George Lindberg, Bernard Weinstein (Physics Dept., SUNY at Buffalo,, U.S.A.), *Alla Reznik (Lakehead Univ. and Thunder Bay Regional Research Inst, Canada)
Page	p. 39

Session 1C2 Si New Materials
Time: 13:20 - 15:00 Monday, August 22, 2011
Location: Room 3
Chair: Masao Isomura (Tokai Univ., Japan)

1C2-1, ID 1008 (Time: 13:20 - 13:40)

Title	Amorphous Epitaxy - Effects of the Substrate on the Electrical Properties of the Amorphous Silicon Channel
Author	*Sigurd Wagner, Bahman Hekmatshoar, Lin Han, James C. Sturm (Princeton Univ., U.S.A.)
Page	p. 40

1C2-2, ID 1178 (Time: 13:40 - 14:00)

Title	High Yield Synthesis of Semiconductive Type II Si Clathrate with Low Na Contents
Author	*Fumitaka Ohashi, Masashi Hattori, Takuya Ogura, Yuzo Koketsu, Roto Himeno, Hironori Natsuhara (Gifu Univ., Japan), Tamio Iida, Hitoe Habuchi (Gifu National College of Tech., Japan), Takayuki Ban, Tetsuji Kume, Shuichi Nonomura (Gifu Univ., Japan)
Page	p. 41

1C2-3, ID 1204 (Time: 14:00 - 14:20)

Title	Optical Band Gap of Semiconductive Type II Si Clathrate Purified by Centrifugation
Author	*Tetsuji Kume, Roto Himeno, Fumitaka Ohashi, Erika Asai, Takayuki Ban, Takatoshi Suzuki (Gifu Univ., Japan), Tamio Iida, Hitoe Habuchi (Gifu National College of Tech., Japan), Yasuo Tsutsumi (Akashi National College of Tech., Japan), Hironori Natsuhara, Shuichi Nonomura (Gifu Univ., Japan)
Page	p. 42

1C2-4, ID 1232 (Time: 14:20 - 14:40)

Title	Optical Nonlinearity in SiC Multilayer Structures: Self Optical Bias Amplification
Author	*Manuela Vieira, Manuel A. Vieira, Paula Louro, Miguel Fernandes, Manuel Barata, Vitor Silva (ISEL, Portugal)
Page	p. 43

1C2-5, ID 1310 (Time: 14:40 - 15:00)

Title	Local Electrical Properties of Microcrystalline Germanium Thin Films by Kelvin Force Microscopy
Author	*Katsunori Makihara (Nagoya Univ., Japan), Hidenori Deki (Hiroshima Kokusai Gakuin Univ., Japan), Mitsuhisa Ikeda (Hiroshima Univ., Japan), Seiichi Miyazaki (Nagoya Univ., Japan)
Page	p. 44

Session 1C3 Organics I
Time: 15:20 - 17:00 Monday, August 22, 2011
Location: Room 3
Chair: Masakazu Nakamura (NAIST, Japan)

1C3-1, ID 1124 (Time: 15:20 - 15:40)

Title	Investigation of Charge Carriers Transport Properties from Extraction Current Transients of Injected Charge Carriers
Author	*Gytis Juska, Nerijus Nekrasas, Kristijonas Genevicius (Vilnius Univ., Lithuania)
Page	p. 45

1C3-2, ID 1006 (Time: 15:40 - 16:00)

Title	Concentration Dependence of the Transport Path for Charge Carriers in Organic Semiconductors
Author	Jan Oliver Oelerich, Daniel Huemmer, *Sergei Baranovskii (Philipps Univ. Marburg, Germany)
Page	p. 46

1C3-3, ID 1154 (Time: 16:00 - 16:20)

Title	Photoresponse Properties of Organic Photodetectors with Iridium Complexes Doped in Conjugated Polymers
Author	*Hirotake Kajii, Akihiro Katsura, Hiroki Ohmori, Tatsunari Hamasaki, Yutaka Ohmori (Osaka Univ., Japan)
Page	p. 47

1C3-4, ID 1007 (Time: 16:20 - 16:40)

Title	Theory of Exciton Dissociation at the Interface between a Polymer and an Electron Acceptor
Author	*Alexey Nenashev (Novosibirsk State Univ., Russian Federation), Martin Wiemer, Sergei Baranovskii (Philipps Univ. Marburg, Germany)
Page	p. 48

1C3-5, ID 1034 (Time: 16:40 - 17:00)

Title	Role of Diffusion in Two-Dimensional Bimolecular Recombination
Author	Alexey Nenashev (Novosibirsk State Univ., Russian Federation), *Fredrik Jansson (Abo Academi Univ. Turku, Finland), Sergei Baranovskii (Philipps Univ. Marburg, Germany)
Page	p. 49

Session 1C4 Chalcogenide Detectors
Time: 17:20 - 19:00 Monday, August 22, 2011
Location: Room 3
Chair: K. Tanaka (Hokkaido Univ., Japan)

1C4-1, ID 1077 (Time: 17:20 - 18:00)

Title	(Invited Paper) The Dark Current and Low Frequency Noise in Photoconductors for Use in Direct Conversion X-Ray Image Detectors: a-Se
Author	*Safa Kasap, Thomas Meyer, Joel Frey, George Belev, Robert Johanson (Univ. of Saskatchewan, Canada)
Page	p. 50

1C4-2, ID 1135 (Time: 18:00 - 18:20)

Title	Amorphous Selenium (a-Se) Avalanche Photosensor with Metal Electrodes for Application in Radiation Medical Imaging
Author	*Oleksandr Bubon (Lakehead Univ., Thunder Bay Regional Research Institute, Canada), Giovanni DeCrencenzo (Thunder Bay Regional Research Institute, Canada), Alla Reznik (Lakehead Univ., Thunder Bay Regional Research Institute, Canada)
Page	p. 51

1C4-3, ID 1065 (Time: 18:20 - 18:40)

Title	Impact Ionization in Chalcogenide Semiconductors: Theoretical and Practical Perspective
Author	Ali Darbandi, Andrew Potvin, Daniel Laughton, *Oleg Rubel (Thunder Bay Regional Research Institute, Canada)
Page	p. 52

1C4-5, ID 1268 (Time: 18:40 - 19:00)

Title	Estimations of the Mean Binding Energy and the Fluctuation of the Structural Units in Chalcogenide Glasses and their Relations to Network Connectivity and Glass Transition Temperature
Author	*Masahiro Ikeda (Fukui National College of Tech., Japan), Masaru Aniya (Kumamoto Univ., Japan)
Page	p. 147

Tuesday, August 23, 2011

Session 2A1 Si Microstructures I
Time: 9:00 - 10:20 Tuesday, August 23, 2011
Location: Room 1
Chair: S. Wagner (Princeton Univ., U.S.A.)

2A1-1, ID 1144 (Time: 9:00 - 9:20)

Title	Microstructure of Hydrogenated Silicon Carbide Thin Films Prepared by Chemical Vapour Deposition Techniques
Author	*Florian Köhler, Tao Chen, Maurice Nuys, Anna Heidt, Martina Luysberg, Friedhelm Finger, Reinhard Carius (Forschungszentrum Jülich GmbH, Germany)
Page	p. 54

2A1-2, ID 1220 (Time: 9:20 - 9:40)

Title	The Nanostructural Analysis of Si:H Films based on Positron Annihilation Studies
Author	*Jimmy Melskens, Arno Smets, Stephan Eijt, Henk Schut, Ekkes Brück, Miro Zeman (Delft Univ. of Tech., Netherlands)
Page	p. 55

2A1-3, ID 1044 (Time: 9:40 - 10:00)

Title	Ellipsometry Characterization of a-Si:H Layers for Thin-Film Solar Cells
Author	*Shota Kageyama, Masataka Akagawa, Hiroyuki Fujiwara (Gifu Univ., Japan)
Page	p. 56

2A1-4, ID 1039 (Time: 10:00 - 10:20)

Title	Derivation of the Near-Surface Dielectric Function of Amorphous Silicon from Photoelectron Loss Spectra
Author	*Denis David (Univ. Federal da Bahia, Brazil), Christian Godet, Hussein Sabbah, Soraya Ababou-Girard, Francine Solal (Univ. Rennes 1, France), Virginia Chu, Joao Pedro Conde (INESC Microsistemas e Nanotechnologias and IN- Institute of Nanoscience and Nanotechnology, Portugal)
Page	p. 57

Session 2A2 Si Microstructures II
Time: 10:40 - 12:00 Tuesday, August 23, 2011
Location: Room 1
Chair: R. Biswas (Iowa State Univ., U.S.A.)

2A2-1, ID 1247 (Time: 10:40 - 11:20)

Title	(Invited Paper) Hydrogenated Amorphous Silicon: the Nature of Anisotropic Disordered Networks as Revealed by Various Diagnostic Tools Like Infrared Spectroscopy
Author	*Arno H.M. Smets (Delft Univ. of Tech., Netherlands)
Page	p. 58

2A2-2, ID 1190 (Time: 11:20 - 11:40)

Title	Hydrogen Bonding in Doped Germanium and Silicon-Germanium Alloys
Author	*N. H. Nickel, L.-P. Scheller, M. Weizman (Helmholtz-Zentrum Berlin für Materialien und Energie, Germany)
Page	p. 59

2A2-3, ID 1117 (Time: 11:40 - 12:00)

Title	Voids in Hydrogenated Amorphous Silicon Materials
Author	*Wolfhard Beyer (Malibu GmbH & Co, KG and IEK-5 Photovoltaik, Germany), Willi Hilgers (Forschungszentrum Jülich GmbH, Germany), Pawel Prunici (Malibu GmbH & Co,KG, Germany), Dorothea Lennartz (Forschungszentrum Jülich GmbH, Germany)
Page	p. 60

Session 2A3 Si Photovoltaics Heterojunction I
Time: 13:20 - 15:00 Tuesday, August 23, 2011
Location: Room 1
Chair: H. Fujiwara (Gifu Univ., Japan)

2A3-1, ID 1250 (Time: 13:20 - 14:00)

Title	(Invited Paper) Future Directions for Higher-Efficiency HIT Solar Cells Using a Thin Silicon Wafer
Author	*Satoshi Tohoda, Daisuke Fujishima, Ayumu Yano, Akiyoshi Ogane, Kenta Matsuyama, Yuya Nakamura, Nozomu Tokuoka, Hiroshi Kanno, Toshihiro Kinoshita, Hitoshi Sakata, Mikio Taguchi, Eiji Maruyama (SANYO Electric Co., Ltd., Japan)
Page	p. 61

2A3-2, ID 1157 (Time: 14:00 - 14:20)

Title	Observation of Band Structure on Amorphous Silicon Surface and Performance of Solar Cells with Controlled Band Offsets on Hetero-Junctions
Author	*Shintaro Miyanishi, Hideki Koh, Yoshiro Takaba, Ryoji Miyamoto, Atsushi Gorai, Hiroshi Matsubara, Junichi Hara, Masaru Saito, Tatsuya Ishii, Tomohiro Machida (SHARP Corp., Japan)
Page	p. 62

2A3-3, ID 1063 (Time: 14:20 - 14:40)

Title	Determination of Band Offsets at Amorphous/Crystalline Silicon Heterojunction from Planar Conductance Measurements
Author	*Renaud Varache, Wilfried Favre (Université Paris-Sud 11, France), Jean-Paul Kleider (CNRS, France)
Page	p. 63

2A3-4, ID 1101 (Time: 14:40 - 15:00)

Title	Photoluminescence Spectrum from Heterojunction with Intrinsic Thin layer Solar Cells: An Efficient Tool for Estimating Wafer Surface Defects
Author	A. Datta (Indian Association for the Cultivation of Science, India), Mun-Ho Song, J. Wang (Ecole Polytechnique, CNRS, France), M. Labrune (TOTAL S. A., Gas & Power - R&D Division, France), S. Chakroborty (Indian Association for the Cultivation of Science, India), P. Roca i Cabarrocas (Ecole Polytechnique, CNRS, France), *P. Chatterjee (Indian Association for the Cultivation of Science, India)
Page	p. 64

Session 2A4 Si Photovoltaics Heterojunction II
Time: 15:20 - 17:00 Tuesday, August 23, 2011
Location: Room 1
Chair: Akira Terakawa (Sanyo, Japan)

2A4-1, ID 1114 (Time: 15:20 - 15:40)

Title	Improving the Performance of Amorphous and Crystalline Silicon Heterojunction Solar Cells by Monitoring Surface Passivation
Author	*J.W.A. Schüttauf, C.H.M. van der Werf, I.M. Kielen, W.G.J.H.M. van Sark, J.K. Rath, R.E.I. Schropp (Utrecht Univ., Netherlands)
Page	p. 65

2A4-2, ID 1207 (Time: 15:40 - 16:00)

Title	Influence of Surface Treatments on Crystalline Germanium Heterojunction Solar Cell Characteristics
Author	*Shinya Nakano, Yoshiaki Takeuchi (Mitsubishi Heavy Industries Ltd., Japan), Tetsuya Kaneko (Tokyo Inst. of Tech., Japan), Michio Kondo (AIST, Japan)
Page	p. 66

2A4-3, ID 1245 (Time: 16:00 - 16:20)

Title	Optimisation of (n) a-Si:H Layers Used as a Back Surface Field on n-Type Silicon Heterojunction Solar Cells
Author	*Sílvia Martín de Nicolás (CEA-INES, France), Wilfried Favre (LGEP, France), Anne-Sophie Ozanne, Delfina Muñoz (CEA-INES, France), Jean-Paul Kleider (LGEP, France), Pierre-Jean Ribeyron (CEA-INES, France)
Page	p. 67

2A4-4, ID 1122 (Time: 16:20 - 16:40)

Title	Growth and Characterization of Si/SiO₂ Nanostructures as Hetero-Emitter for Photovoltaic Applications
Author	*Maurizio Roczen, Enno Malguth (Helmholtz-Zentrum Berlin, Germany), Martin Schade (Interdisziplinäres Zentrum für Materialwissenschaften, Martin-Luther-Universität Halle-Wittenberg, Germany), Orman Gref, Thomas Barthel, Jan Amaru Töfflinger, Andreas Schöpke, Manfred Schmidt, Lars Korte, Bernd Rech (Helmholtz-Zentrum Berlin, Germany)
Page	p. 68

2A4-5, ID 1218 (Time: 16:40 - 17:00)

Title	Ellipsometry Characterization of a-Si:H p-Layers in a-Si:H/c-Si Solar Cells
Author	*Nobuyuki Matsuki, Koji Mizoguchi, Hiroyuki Fujiwara (Gifu Univ., Japan)
Page	p. 69

Session 2B1 Oxide Electrical and Optical Properties III
Time: 9:00 - 10:20 Tuesday, August 23, 2011
Location: Room 2
Chair: R. Martins (UNINOVA, Portugal)

2B1-1, ID 1315 (Time: 9:00 - 9:20)

Title	Non-Crystalline SiO₂: A Model System for Intrinsic Bonding Defects in GeO₂ and As and Ge Chalcogenides
Author	*Gerald Lucovsky, Daniel Zeller, Kun Wu, Jerry L. Whitten (NC State Univ., U.S.A.)
Page	p. 70

2B1-2, ID 1164 (Time: 9:20 - 9:40)

Title	The Magnetic and Electrical Effects of W Impurities in the ZnO Thin Films
Author	*Musa Mutlu Can, Tezer Firat (Univ. of Hacettepe, Turkey), S. İsmat Shah (Univ. of Delaware, U.S.A.)
Page	p. 71

2B1-3, ID 1331 (Time: 9:40 - 10:00)

Title	EPR Spectroscopy of Cr-Doped Nanocrystalline Titania
Author	*Nikolay Le (Moscow State M.V. Lomonosov Univ., Russian Federation), Elizaveta Konstantinova (Moscow State M.V. Lomonosov Univ./Russian Research Center "Kurchatov Institute", Russian Federation), Ivan Pentegov, Daria Deygen (Moscow State M.V. Lomonosov Univ., Russian Federation)
Page	p. 72

Session 2B2 Oxide TFT I
Time: 10:40 - 12:00 Tuesday, August 23, 2011
Location: Room 2
Chair: H. Hosono (Tokyo Inst. of Tech., Japan)

2B2-1, ID 1209 (Time: 10:40 - 11:00)

Title	Roles of Excess Hydrogen and Oxygen in Amorphous IGZO
Author	*Kenji Nomura, Yutomo Kikuchi, Keisuke Ide, Toshio Kamiya, Hideo Hosono (Tokyo Inst. of Tech., Japan)
Page	p. 73

2B2-2, ID 1176 (Time: 11:00 - 11:20)

Title	High Mobility a-IGZO TFT with Nano-Dots Doping
Author	*Hsiao-Wen Zan, Wu-Wei Tsai, Chia-Hsin Chen, Chuang-Chuang Tsai, Hsin-Fei Meng (National Chiao Tung Univ., Taiwan)
Page	p. 74

2B2-3, ID 1173 (Time: 11:20 - 11:40)

Title	Back Interface Engineering of a-IGZO TFTs to Realize High Performance Photo Sensors and Biochemical Sensors
Author	*Hsiao-Wen Zan, Chang-Hung Li, Wei-Tsung Chen, Chun-Cheng Yeh, Chuang-Chuang Tsai, Ming-Zhi Dai, Hsin-Fei Meng (National Chiao Tung Univ., Taiwan)
Page	p. 75

Session 2B3 Chalcogenide Phase Change I
Time: 13:20 - 15:00 Tuesday, August 23, 2011
Location: Room 2
Chair: K. Shimakawa (Gifu Univ., Japan)

2B3-1, ID 1013 (Time: 13:20 - 13:40)

Title	Defects and Electrical Storage Mechanism in GeSbTe Phase Change Materials
Author	Bolong Huang, *John Robertson (Cambridge Univ., U.K.)
Page	p. 76

2B3-4, ID 1170 (Time: 13:40 - 14:00)

Title	Sub-Gap States in Ge₂Sb₂Te₅ Phase Change Films
Author	*Tamihiro Gotoh (Gunma Univ., Japan)
Page	p. 141

2B3-2, ID 1270 (Time: 14:00 - 14:40)

Title	Athermal Amorphisation of Chalcogenide Glasses and Phase-Change Alloys
Author	*Alexander Kolobov, Paul Fons, Milos Krbal, Junji Tominaga (AIST, Japan), Tomoya Uruga (SPring-8, Japan)
Page	p. 77

2B3-3, ID 1003 (Time: 14:40 - 15:00)

Title	(Invited Paper) Phase Change Materials: from Optical Data Storage to Novel Electronic Memories
Author	*Matthias Wuttig (RWTH Aachen Univ., Germany)
Page	p. 78

Session 2B4 Chalcogenide Phase Change II
Time: 15:20 - 17:00 Tuesday, August 23, 2011
Location: Room 2
Chair: Gurinder K. Ahluwalia (College of North Atlantic, Canada)

2B4-1, ID 1162 (Time: 15:20 - 15:40)

Title	Intermediate-Range Atomic Structures in Amorphous Ge₂Sb₂Te₅ Phase Change Material
Author	*Shinya Hosokawa (Hiroshima Inst. of Tech., Japan), Wolf-Christian Pilgrim, Astrid Hohle, Daniel Szubrin (Univ. of Marburg, Germany), Nathalie Boudet, Jean-Francois Berar (CNRS, France), Kenji Maruyama (Niigata Univ., Japan), Gunnar Bruns, Matthias Wuttig (Rheinisch-Westfälische Technische Hochschule Aachen, Germany)
Page	p. 79

2B4-2, ID 1004 (Time: 15:40 - 16:00)

Title	Ge_xSn_yTe_1-x-y Phase Change Alloys for Applications in Electronic Data Storage
Author	*Jennifer Luckas (RWTH Aachen Univ./ Laboratoire de Génie Electrique de Paris, Germany), Christophe Longeaud (Laboratoire de Génie Electrique de Paris, France), Matthias Wuttig (RWTH Aachen Univ., Germany)
Page	p. 80

2B4-3, ID 1131 (Time: 16:00 - 16:20)

Title	Influence of Doping on the Properties of Phase-Change Memory Materials on the Basis of Ge-Sb-Te System
Author	*Sergey Kozyukhin (Russian Academy of Sciences, Russian Federation), Alexey Sherchenkov, Peter Lazarenko (Moscow State Institute of Electronic Technology (Technical Univ.), Russian Federation), Phuc Nguyen (Russian Academy of Sciences, Russian Federation), Alexey Babich (Moscow State Institute of Electronic Technology (Technical Univ.), Russian Federation)
Page	p. 81

2B4-4, ID 1067 (Time: 16:20 - 16:40)

Title	Electrical Transport Properties of Thin Films of Ge₁Sb₂Te₄ and Ge₂Sb₂Te₅ Phase-Change Materials
Author	*Ling Xu, Lei Geng, Liang Tong, Dong Liu, Fei Yang, Jun Xu, Zhongyuan Ma, Weining Su, Kunji Chen (Nanjing Univ., China)
Page	p. 82

Session 2C1 Si Quantum Structures II
Time: 9:00 - 10:20 Tuesday, August 23, 2011
Location: Room 3
Chair: Yoshihiko Kanemitsu (Kyoto Univ., Japan)

2C1-1, ID 1096 (Time: 9:00 - 9:20)

Title	Photoluminescence of Nanocrystalline Silicon Quantum Dots Prepared by VHF Plasma Cell
Author	*Ken Someno, Kouichi Usami, Tetsuo Kodera, Mutsuko Hatano, Shunri Oda (Tokyo Inst. of Tech., Japan)
Page	p. 83

2C1-2, ID 1025 (Time: 9:20 - 9:40)

Title	Enhanced Luminescence from Si Quantum Dots/SiO₂ Multilayer by Hydrogen Annealing
Author	*Jun Xu, Hongcheng Sun, Zhengyue Xia, Deyuan Wei, Wei Li, Kunji Chen (Nanjing Univ., China)
Page	p. 84

2C1-3, ID 1254 (Time: 9:40 - 10:00)

Title	Electroluminescence of Si Quantum Dots Embedded SiN_x/SiO_x Superlattice
Author	Hung-Yu Tai, *Yung-Hsiang Lin, Gong-Ru Lin (National Taiwan Univ., Taiwan)
Page	p. 85

2C1-4, ID 1140 (Time: 10:00 - 10:20)

Title	Defect Passivation by Hydrogen Reincorporation for Silicon Quantum Dots in SiC/SiO_x Hetero-Superlattice
Author	*Kaining Ding, Urs Aeberhard, Oleksandr Astakhov, Wolfhard Beyer, Friedhelm Finger, Reinhard Carius, Uwe Rau (Forschungszentrum Jülich GmbH, Germany)
Page	p. 86

Session 2C2 Organics II
Time: 10:40 - 12:00 Tuesday, August 23, 2011
Location: Room 3
Chair: S. Baranovski (Univ. of Marburg, Germany)

2C2-1, ID 1160 (Time: 10:40 - 11:00)

Title	Chemical Doping in Large-Ionization-Potential Organic Materials for Air-Stable Vertical-Type Organic Transistors
Author	*Masakazu Nakamura, Shoutaro Masuda, Tatsuyoshi Okamoto, Masatoshi Sakai, Kazuhiro Kudo (Chiba Univ., Japan)
Page	p. 87

2C2-2, ID 1120 (Time: 11:00 - 11:20)

Title	Tuning the Gate Dielectric for Low-Voltage Organic Thin-Film Transistors
Author	Krishna Chytanya Chinnam, Swati Gupta, *Helena Gleskova (Univ. of Strathclyde, U.K.)
Page	p. 88

2C2-3, ID 1347 (Time: 11:20 - 12:00)

Title	(Invited Paper) Stretchable and Foldable and Organic Integrated Circuits for Robotics and Medical Sensor Applications
Author	Takao Someya, *Tsuyoshi Sekitani (Univ. of Tokyo, Japan)
Page	p. 89

Session 2C3 Organics III
Time: 13:20 - 15:00 Tuesday, August 23, 2011
Location: Room 3
Chair: Tsuyoshi Sekitani (Univ. of Tokyo, Japan)

2C3-1, ID 1038 (Time: 13:20 - 13:40)

Title	Transparent Image Pixel with Pentacene/ZnO Heterojunction Photo-Diode, Pentacene based Thin-Film Transistor and Phosphor Layer
Author	*Kwang Hyun Lee, Hee Sung Lee (Yonsei Univ., Republic of Korea), Kimoon Lee (Tokyo Inst. of Tech., Japan), Taewoo Ha, Jae Hoon Kim, Seongil Im (Yonsei Univ., Republic of Korea)
Page	p. 90

2C3-2, ID 1313 (Time: 13:40 - 14:00)

Title	Anisotropic Behavior of Performance in Organic Thin Film Transistor Employing Self-Assembly of Organic Channel/Polymer Dielectric
Author	*Ji Hoon Park, Young Tack Lee, Seognil Im (Yonsei Univ., Republic of Korea)
Page	p. 91

2C3-3, ID 1200 (Time: 14:00 - 14:20)

Title	Thermal Stability in Organic FET Fabricated with Soluble BTBT Derivatives
Author	*Hiroaki Iino, Takeo Kobori, Jun-ichi Hanna (Tokyo Inst. of Tech., Japan)
Page	p. 92

2C3-4, ID 1081 (Time: 14:20 - 14:40)

Title	A Novel Magnetic Switching Effect in C₆₀-Co Nanocomposites
Author	Yutaka Sakai, Eiiti Tamura, Eiji Shikoh (Osaka Univ., Japan), Vlado K. Lazarov, Atsufumi Hirohata (Univ. of York, U.K.), Teruya Shinjo, Yoshishige Suzuki, *Masashi Shiraishi (Osaka Univ., Japan)
Page	p. 93

Session 2C4 Nanostructure and Nitride
Time: 15:20 - 17:00 Tuesday, August 23, 2011
Location: Room 3
Chair: Kazuro Murayama (Nihon Univ., Japan)

2C4-1, ID 1212 (Time: 15:20 - 15:40)

Title	Room Temperature Superradiance due to Coherent Coupling between Light and Extended Single Quantum State
Author	*Masayoshi Ichimiya (Osaka Dental Univ., Japan), Hideki Yasuda (Osaka Prefecture Univ., Japan), Keita Mochizuki, Masaaki Ashida (Osaka Univ., Japan), Hajime Ishihara (Osaka Prefecture Univ., Japan), Tadashi Itoh (Osaka Univ., Japan)
Page	p. 94

2C4-2, ID 1198 (Time: 15:40 - 16:00)

Title	Possible Transitions of Biexciton Luminescence Confined in Quantum Dots
Author	*Le Quang Phuong, Kensuke Miyajima, Kosuke Maeno, Tadashi Itoh, Masaaki Ashida (Osaka Univ., Japan)
Page	p. 95

2C4-3, ID 1011 (Time: 16:00 - 16:20)

Title	Exciton and Biexciton Dynamics in CdSe Nanospheres and Nanorods: Shape Dependence
Author	*Seiji Taguchi (Kyoto Univ., Japan), Masaki Saruyama, Toshiharu Teranishi (Univ. of Tsukuba, Japan), Yoshihiko Kanemitsu (Kyoto Univ., Japan)
Page	p. 96

2C4-4, ID 1284 (Time: 16:20 - 16:40)

Title	Enhancement of Eu³⁺ Luminescence Intensity in Eu-Doped GaN by Mg Codoping
Author	*Dong-gun Lee, Atsushi Nishikawa, Naoki Furukawa, Kosuke Kawabata, Yoshikazu Terai, Yasufumi Fujiwara (Osaka Univ., Japan)
Page	p. 97

2C4-5, ID 1262 (Time: 16:40 - 17:00)

Title	In_XGa_1-XN Films Deposited by Reactive RF-Sputtering
Author	*Takashi Itoh, Shun Hibino, Tatsuro Sahashi, Yoshinori Kato, Sunao Koiso, Fumitaka Ohashi, Shuichi Nonomura (Gifu Univ., Japan)
Page	p. 98

Session P1 Poster I
Time: 18:00 - 19:40 Tuesday, August 23, 2011
Location: Reception Hall
Chair: Takashi Kobayashi (Osaka Prefecture Univ., Japan)

[Si Photovoltaics (Production, Device Physics, Device Fabrication, Heterojunction)]

P1-1, ID 1089

Title Light-Induced Increase in the Open Circuit Voltage and Fill Factor of Microcrystalline Silicon Solar Cells Deposited in a Single Chamber System

Author *Xiaodan Zhang, G. H. Wang, S. Z. Xu, S. Z. Xiong, X. H. Geng, Y. Zhao (Nankai Univ., China)

Page p. 99

P1-2, ID 1051

Title	Midgap Defect Densities in Nanocrystalline Si Solar Cells
Author	Dan Congreve, Shantan Kajjam, Nayan Chakravarty, *Vikram Dalal (Iowa State Univ., U.S.A.)
Page	p. 100

P1-3, ID 1109

Title	Crystalline Growth of Germanium Thin Films on Single Crystal Silicon Substrates Promoted by Solid Phase Crystallization
Author	*Atsushi Suzuki, Masao Isomura (Tokai Univ., Japan)
Page	p. 101

P1-4, ID 1202

Title	Heat Treatment of Amorphous Silicon p-i-n Solar Cells with High-Pressure H₂O Vapor
Author	*Masahiko Hasumi, Jun Takenezawa, Toshiyuki Sameshima (Tokyo Univ. of Agri. and Tech., Japan), Takashi Koida, Tetsuya Kaneko, Minoru Karasawa, Michio Kondo (AIST, Japan)
Page	p. 102

P1-5, ID 1233

Title	Study of Hydrogenated Amorphous Silicon-Germanium Thin Films, Deposited at Low Temperature, by the DC Magnetron Sputtering Method for Photovoltaic Applications
Author	Lamia Laidoudi, Abdelkrim Fedala, *Abla Rahal (Univ. of Science and Tech. Houari Boumedienne, Algeria)
Page	p. 103

P1-6, ID 1280

Title	Amorphous Silicon Films on Teflon Substrates by PECVD and HWCVD
Author	*Himanshu S. Jha (Indian Inst. of Tech. Guwahati, India), Barkha Awasthi, Dinesh Deva (Indian Inst. of Tech. Kanpur, India), Pratima Agarwal (Indian Inst. of Tech. Guwahati, India)
Page	p. 104

P1-7, ID 1290

Title	Role of Hydrogen in the Ordering of the a-Si:H Films during and after the Film Growth. Enhancement of the Passivation Properties for Solar Cell Application
Author	*Adel B. Gougam, Arul Kumar, Twan Bearda, Ivan Gordon, Jef Poortmans (imec, Belgium)
Page	p. 105

P1-8, ID 1111

Title	Low Concentrator Hetero-Junction Microcrystalline Silicon Solar Cells
Author	*Shunsuke Kasashima, Taweewat Krajangsang, Aswin Hongsingthong, Hideaki Fujioka, Porponth Sichanugrist, Makoto Konagai (Tokyo Inst. of Tech., Japan)
Page	p. 106

P1-9, ID 1153

Title	Improvement of Silicon Tin(SiSn) Thin Films Solar Cells
Author	*Takehiko Nagai, Zhengxin Liu, Ivan Turkevych, Michio Kondo (AIST, Japan)
Page	p. 107

[Si Electronic & Optical Properties, Si Transport Properties, Si Metastability, Si Devices, Poly-Si Preparation]

P1-10, ID 1318

Title Numerical Model of Transport in Microcrystalline Silicon Films

Author *Jimmy Armand, Frederic Martinez, Yvan Cuminal (Univ. Montpellier 2, France)

Page p. 108

P1-11, ID 1010

Title	Effect of Hydrogen on Boron Doped Amorphous Silicon Prepared by DC Magnetron Sputtering
Author	Hadj Yahia Seba, Rabah Cherfi, *Farida Hamadache, Moussa Aoucher (Univ. of Science and Tech. Houari Boumedienne, Algeria)
Page	p. 109

P1-12, ID 1047

Title	Hopping-Gap and Luminescence in Hydrogenated Amorphous Silicon
Author	*Kunitaka Monji, Ryo Sagawa, Kouhei Tsushima (Nihon Univ., Japan), Hidenori Deki (Hiroshima Kokusai Gakuin Univ., Japan), Kazuro Murayama (Nihon Univ., Japan)
Page	p. 110

P1-13, ID 1050

Title	Influence of Chemical Annealing on Bandgap and Electronic Properties of Amorphous Si and Amorphous (Si,Ge)
Author	Ashutosh Shyam, Dan Congreve, *Vikram Dalal (Iowa State Univ., U.S.A.)
Page	p. 111

P1-14, ID 1059

Title	Comparison between the Oscillating Photocarrier Grating and the Moving Grating Techniques
Author	Federico Ventosinos (INTEC, Argentina), *Christophe Longeaud (LGEP, France), Javier Schmidt (INTEC, Argentina)
Page	p. 112

P1-15, ID 1093

Title	Temporal Electric Conductivity Variations of Hydrogenated Amorphous Silicon Due to High Energy Protons
Author	*Shin-ichiro Sato (Japan Atomic Energy Agency, Japan), Hitoshi Sai (AIST, Japan), Takeshi Ohshima (Japan Atomic Energy Agency, Japan), Mitsuru Imaizumi, Kazunori Shimazaki (Japan Aerospace Exploration Agency, Japan), Michio Kondo (AIST, Japan)
Page	p. 113

P1-16, ID 1148

Title	Sub-Gap Photoconductivity in Ge_0.96Si_0.04:H Films Deposited by Low Frequency Plasma at Low Temperatures
Author	*Francisco Avila, Andrey Kosarev, Ismael Cosme (National Institute for Astrophysics, Optics and Electronics, Mexico)
Page	p. 114

P1-17, ID 1316

Title	Anomalous Hall effect in µc-Si:H
Author	Christian Sellmer, Torsten Bronger, *Wolfhard Beyer, Reinhard Carius (Forschungszentrum Jülich GmbH, Germany)
Page	p. 115

P1-18, ID 1036

Title	Infrared Semiconductor Laser Irradiation Used for Crystallization of Silicon Thin Films
Author	*Toshiyuki Sameshima, Masahiko Hasumi (Tokyo Univ. of Agri. and Tech., Japan)
Page	p. 116

P1-19, ID 1043

Title	Raman Scattering from the High-Pressure Phases of Si Induced by Indentation
Author	*Brett C. Johnson (Japan Atomic Energy Agency, Japan), Bianca Haberl, Jodie E. Bradby (Australian National Univ., Australia), Jeffrey C. McCallum (Univ. of Melbourne, Australia), Jim S. Williams (Australian National Univ., Australia)
Page	p. 117

P1-20, ID 1255

Title	Light-Induced Annealing of Hole Trap States: A New Aspect of Light-Induced Changes in Hydrogenated Amorphous Silicon
Author	*Isao Sakata, Toshihiro Kamei, Mitsuyuki Yamanaka (National Institute of Advanced Industrial Science and Technology (AIST), Japan)
Page	p. 118

P1-21, ID 1289

Title	Amorphous-Nanocrystalline Silicon Transition from Argon Diluted Silane Deposition
Author	*Rachid Amrani, Yvan Cuminal, Frederic Pichot, Alain Foucaran (Univ. de Montpellier II, France), Larbi Chahed (Univ. d'Oran, Algeria)
Page	p. 119

P1-22, ID 1305

Title	Crystallization of Amorphous Silicon Films on Porous Silicon by Micro-Thermal-Plasma-Jet Irradiation
Author	*Ryohei Matsubara, Shohei Hayashi, Seiichiro Higashi (Hiroshima Univ., Japan)
Page	p. 120

P1-23, ID 1317

Title	Intermediate Phase Silicon Structure Induced Intensive Electroluminescence from Thermal Annealed SiO Film
Author	*Zhongyuan Ma, Xiaofan Jiang, Guoyin Xia, Ling Xu, Wei Li, Jun Xu, Kunji Chen, Xinfan Huang, Duan Feng (Nanjing Univ., China)
Page	p. 121

P1-24, ID 1334

Title	Adsorbate-Related Metastability of the Dark and Photoelectronic Minority and Majority Properties in Hydrogenated Microcrystalline Silicon Thin Films
Author	Meliha Bayrak (Institut für Physik, Carl von Ossietzky Universität Oldenburg, Germany), *Mehmet Günes (Mugla Univ., Turkey), Vladimir Smirnov, Friedhelm Finger (Forschungszentrum Jülich GmbH, Germany), Rudolf Brüggemann (Institut für Physik, Carl von Ossietzky Universität Oldenburg, Germany)
Page	p. 122

P1-25, ID 1054

Title	Thin Film Membrane based on a-SiGe:B and MEMS Technology for Application in Cochlear Implants
Author	*Aurelio Heredia, Manuel Gonzalez (UPAEP, Mexico), Roberto Ambrosio (UACJ, Mexico), Mario Moreno (INAOE, Mexico), Laura Castro Y Fernandez (UPAEP, Mexico), Abimael Jimenez (UACJ, Mexico)
Page	p. 123

P1-26, ID 1055

Title	Fabrication of an Integrated Optical Interferometric Device for Biological Applications based on SiN Waveguides Deposited by PECVD
Author	*Aurelio Heredia (UPAEP, Mexico), Roberto Ambrosio (UACJ, Mexico), Laura Castro Y Fernandez (UPAEP, Mexico), Carlos Zuñiga, Mario Moreno (INAOE, Mexico), Abimael Jimenez (UACJ, Mexico)
Page	p. 124

P1-27, ID 1146

Title	Nanocrystalline Si based Photoconductive Device for THz Generation
Author	*Nart S. Daghestani, Saydulla Persheyev, Maria Ana Cataluna (Univ. of Dundee, U.K.), Gary Ross (NCR FSG Ltd, U.K.), Mervyn J. Rose (Univ. of Dundee, U.K.)
Page	p. 125

P1-28, ID 1150

Title	Study of Polymorphous Silicon and Germanium as Thermo-Sensing Films for Infrared Detectors
Author	Mario Moreno, *Alfonso Torres (Instituto Nacional de Astrofísica, Óptica y Electrónica, Mexico), Roberto Ambrosio (Universidad Autónoma de Ciudad Juárez, Mexico), Alfonso Torres-Rios, Pedro Rosales, Carlos Zuniga (Instituto Nacional de Astrofísica, Óptica y Electrónica, Mexico), Aurelio Heredia (Universidad Popular Autónoma de Puebla, Mexico)
Page	p. 126

P1-29, ID 1166

Title	Synthesis of nc-Si/SiN Core-Shell Hemisphere System with Controllable Size for Floating Gate Memory
Author	Xiaofan Jiang, *Zhongyuan Ma, Guanyuan Liu, Xinye Qian, Zhonghui Fang, Xiangao Zhan, Kunji Chen, Xinfan Huang, Jun Xu, Ling Xu (Nanjing Univ., China)
Page	p. 127

P1-30, ID 1234

Title	Ambipolar a-SiGe:H Thin-Film Transistors Fabricated at 200°C
Author	Miguel Dominguez, Pedro Rosales, *Alfonso Torres, Mario Moreno, Joel Molina, Francisco De la Hidalga, Carlos Zuñiga, Wilfrido Calleja (National Institute for Astrophysics, Optics and Electronics (INAOE), Mexico)
Page	p. 128

P1-31, ID 1253

Title	Improvement of Electrical Characteristics of a-SiGe:H Thin-Film Transistors
Author	Miguel Dominguez, Pedro Rosales, *Alfonso Torres, Mario Moreno, Joel Molina, Francisco De la Hidalga, Carlos Zuñiga, Wilfrido Calleja (National Institute for Astrophysics, Optics and Electronics (INAOE), Mexico)
Page	p. 129

P1-32, ID 1001

Title	The Thermal Stability of Poly-Si Crystallized by Al Induced with H-Plasma
Author	Chong Luo, Juan Li, He Li, Zhiguo Meng (Nankai Univ., China), Hoi Sing Kwok (Hong Kong Univ. of Science and Tech., China), *Shaozhen Xiong (Nankai Univ., China)
Page	p. 130

P1-33, ID 1002

Title	The Roles of Hydrogen Plasma Radicals on Passivation of Poly-Si
Author	Chong Luo, Juan Li, He Li, Zhiguo Meng (Nankai Univ., China), Hoi Sing Kwok (Hong Kong Univ. of Science and Tech., China), *Shaozhen Xiong (Nankai Univ., China)
Page	p. 131

P1-34, ID 1069

Title	Peculiarities of Photoelectrical and Optical Properties of Protocrystalline Hydrogenated Silicon Films
Author	*Andrey Kazanskii (M.V. Lomonosov Moscow State Univ., Russian Federation), Xiangbo Zeng, Wenbo Peng (Institute of Semiconductors, CAS, China)
Page	p. 132

P1-35, ID 1108

Title	High-Pressure H₂O Vapor Treatment for Poly-Crystalline Germanium Thin Films
Author	*Takeru Sagisaka, Takahiro Takatsu, Masao Isomura (Tokai Univ., Japan)
Page	p. 133

P1-36, ID 1110

Title	Poly-Silicon-Germanium Thin Films Prepared by Aluminum-Induced Crystallization
Author	*Masahiro Yajima (Tokai Univ., Japan), Isao Nakamura (Tokyo Metropolitan Industrial Technology Research Institute, Japan), Masao Isomura (Tokai Univ., Japan)
Page	p. 134

P1-37, ID 1301

Title	Structural and Electrical Properties of High Temperature Polycrystalline Silicon Films on Molybdenum Substrate
Author	*Hyunil Kang (Hanbat National Univ., Republic of Korea), Doyoung Kim (Ulsan College, Republic of Korea)
Page	p. 135

[Chalcogenide Phase Change, Chalcogenide Metastability, Chalcogenide Structure]

P1-38, ID 1005

Title Towards a Better Understanding of Resistance Drift and Threshold Switching Phenomena in Amorphous Phase Change Materials: Study of GeTe Versus Ge₁₅Te₈₅

Author *Jennifer Luckas (RWTH Aachen Univ./ Laboratoire de Génie Electrique de Paris, Germany), Martin Salinga (RWTH Aachen Univ., Germany), Christophe Longeaud (Laboratoire de Génie Electrique de Paris, France), Matthias Wuttig (RWTH Aachen Univ., France)

Page p. 136

P1-39, ID 1042

Title	Chalcogenide Programmable Switches with SiGeSb Heating Layers
Author	*Seung-Yun Lee, S. Jung (Hanbat Natl. Univ., Republic of Korea), S. Yoon, Y. Park (ETRI, Republic of Korea)
Page	p. 137

P1-40, ID 1088

Title	Investigation on Sb-Rich Sb-Te-Se Phase-Change Material for Phase Change Memory Application
Author	*Liangcai Wu, Min Zhu, Cheng Peng, Zhitang Song, Xilin Zhou, Henan Ni, Feng Rao, Bo Liu, Songlin Feng (Chinese Academy of Sciences, China)
Page	p. 138

P1-41, ID 1113

Title	Impact of DoS Changes on Resistance Drift and Threshold Switching in Amorphous Phase Change Materials
Author	*Daniel Krebs (IBM, Switzerland), Rüdiger Matti Schmidt (RWTH Aachen Univ., Germany), Josef Klomfaß (Forschungszentrum Jülich GmbH, Germany), Jennifer Luckas, Gunnar Bruns, Carl Schlockermann, Martin Salinga (RWTH Aachen Univ., Germany), Reinhard Carius (Forschungszentrum Jülich GmbH, Germany), Matthias Wuttig (RWTH Aachen Univ., Germany)
Page	p. 139

P1-42, ID 1163

Title	Advantages of GeTeN Material for Phase Change Memory Application
Author	Cheng Peng, *Liangcai Wu, Zhitang Song, Feng Rao, Min Zhu, Xilin Zhou, Sannian Song, Songlin Feng (Chinese Academy of Sciences, China)
Page	p. 140

P1-44, ID 1288

Title	Compositional Dependence of the Local Structure in GeTe based Alloys: Step for Development of Superior Phase-Change Materials
Author	*Milos Krbal, Alexander V. Kolobov, Paul Fons, Robert E. Simpson (National Institute of Advanced Industrial Science & Technology (AIST), Japan), Toshiyuki Matsunaga, Noboru Yamada (Panasonic Corp., Japan), Junji Tominaga (National Institute of Advanced Industrial Science & Technology (AIST), Japan), Tomoya Uruga (SPring8, Japan Synchrotron Radiation Institute(JASRI), Japan)
Page	p. 142

P1-45, ID 1123

Title	Photo-Induced Structural Transformations in Chalcogenide Vitreous Semiconductors
Author	*Ugis Gertners, Jelena Aleksejeva, Janis Teteris (Univ. of Latvia, Latvia)
Page	p. 143

P1-47, ID 1167

Title	Materials Design of Magnetic Semiconductors based on Filled Tetrahedral Compounds
Author	Sachito Fujimoto, *Kazunori Sato, Hiroshi Katayama-Yoshida (Osaka Univ., Japan)
Page	p. 144

P1-48, ID 1259

Title	Structure Modification of Arsenic Containing ChVS Amorphous Films Electronic Properties
Author	Oleg Prikhodko, Alexander Ryaguzov, Suyumbika Maksimova, *Nurlan Almasov (Al-Farabi Kazak State National Univ., Kazakhstan)
Page	p. 145

P1-49, ID 1264

Title	Studying the Role of Medium Range Structure on the Dispersion of Refractive Index in Chalcogenide Glasses
Author	*Masaru Aniya, Shosuke Ikeda (Kumamoto Univ., Japan)
Page	p. 146

P1-51, ID 1330

Title	The Structural Features and Physicochemical Essence of Glass Transition Process in the Vitreous Individual Chemical Substances
Author	*Victor Minaev, Sergey Timoshenkov, Victor Kalugin (Moscow Institute of Electronics Engineering (Technical Univ.), Russian Federation)
Page	p. 148

[Oxide Electronic & Optical Properties]

P1-52, ID 1171

Title Sub-Gap Absorption Study of Amorphous InGaZnO₄ Films by Photothermal Deflection Spectroscopy

Author *Tamihiro Gotoh, Kenji Kaneda, Syun Kasahara, Takumi Kakinuma (Gunma Univ., Japan)

Page p. 149

P1-53, ID 1221

Title	Chemical bath Deposition of Undoped and Ni Doped ZnO Nanowire
Author	*Shih Hang Chiu, J.C.A. Huang (National Cheng Kung Univ., Taiwan)
Page	p. 150

P1-54, ID 1243

Title	Effect of Plasma Pressure on to TiO₂ Nanoparticles Synthesized via Laser Ablation at Titanium-Water Interface
Author	*Arpita Nath, Alika Khare (Indian Inst. of Tech. Guwahati, India)
Page	p. 151

P1-55, ID 1273

Title	Growth and Properties of Zinc Oxide Films Prepared in Atmospheric-Pressure Radio Frequency Plasma
Author	*Shuta Mine (Osaka Univ., Japan), Shinya Okazaki (SHARP Corp., Japan), Takahiro Yamada, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake (Osaka Univ., Japan)
Page	p. 152

P1-56, ID 1296

Title	Effect of Background Oxygen Pressure and Substrate Temperature onto the Quality MoO₃ Thin Films via PLD
Author	Abu TT Mostako, Partha Dey, Himanshu S Jha, Mukesh Singh, Pratima Agarwal, *Alika Khare (Indian Inst. of Tech. Guwahati, India)
Page	p. 153

P1-57, ID 1343

Title	Electron Spin Resonance of Transparent Conductive Oxide β-Ga₂O₃
Author	*Hiromi Tsuzuki, Sayumi Takano, Mitsuo Yamaga (Gifu Univ., Japan), Encarnacion G. Villora, Kiyoshi Shimamura (NIMS, Japan)
Page	p. 154

P1-58, ID 1184

Title	Chemical Bonding and Valence Band States of SiO₂ Thin Film Prepared by Oxygen Plasma Followed by High-Pressure H₂O Vapor Heat Treatment
Author	*Atsushi Kohno, Takayuki Tajiri (Fukuoka Univ., Japan), Shinya Yoshidomi, Masahiko Hasumi, Toshiyuki Sameshima (Tokyo Univ. of Agri. and Tech., Japan)
Page	p. 155

P1-59, ID 1249

Title	Deposition Characteristics of Silicon Oxides in Open Air Using Atmospheric-Pressure Plasma Jet
Author	*Kousuke Higashida, Kei Nakamura (Osaka Univ., Japan), Tetsuji Shibata (Panasonic Electric Works Co.,Ltd, Japan), Takahiro Yamada, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake (Osaka Univ., Japan)
Page	p. 156

P1-60, ID 1020

Title	Chemical Activity of Oxygen Atoms in the Magnetron Sputter-Deposited ZnO Film Growth
Author	*Fumiya Watanabe, Aya Morita, Shun-suke Sato, Hajime Shirai (Saitama Univ., Japan)
Page	p. 157

P1-61, ID 1022

Title	Synthesis of Hexagonal ZnO Nanosheets by Using Atomic Oxygen Plasma
Author	*Jong-Hwan Yoon (Kangwon National Univ., Republic of Korea)
Page	p. 158

P1-62, ID 1028

Title	Synthesis and Characterization of ZnO Nanorods Thin Film on Zinc Foil Substrate by Hydrothermal Oxidation Method
Author	*Nuengruethai Ekthammathat, Titipun Thongtem (Chiang Mai Univ., Thailand), Anukorn Phuruangrat (Prince of Songkla Univ., Thailand), Somchai Thongtem (Chiang Mai Univ., Thailand)
Page	p. 159

P1-63, ID 1082

Title	Pulsed Laser Deposited In₁₆Ga₂ZnO₂₈ Thin Film on Quartz Glass
Author	Jiangbo Chen, Li Wang, Xueqiong Su, Xiaojing Wan, Le Kong (Beijing Univ. of Tech., China), *Rongping Wang (Australian National Univ., Australia)
Page	p. 160

P1-64, ID 1090

Title	Triangle Type ZnO Transparent Conductive Oxide Deposited by Low Cost Ultra Spray Pyrolysis: Wide Spectrum High Transparence
Author	*Xiaodan Zhang, Baochen Jiao, Changchun Wei, Ying Zhao (Nankai Univ., China)
Page	p. 161

P1-65, ID 1091

Title	Deposition and Characterization of Sb and Cu Doped Nanocrystalline SnO₂ Thin Films Fabricated by the Photochemical Method
Author	*Dengbaoleer Ao, Masaya Ichimura (Nagoya Inst. of Tech. Univ., Japan)
Page	p. 162

P1-66, ID 1158

Title	Effects of Gallium Doping on Electrical Properties of Amorphous Zn-Sn-O Thin Films
Author	*Hye-Ri Kim (Korea Institute of Materials Science (KIMS), Republic of Korea), Hee Sung Lee (Yonsei Univ., Republic of Korea), Dong-Ho Kim (Korea Institute of Materials Science (KIMS), Republic of Korea)
Page	p. 163

[Organics]

P1-67, ID 1017

Title Highly Conductive 3.4-polyethylenedioxythiophene:polystyrenesulfonic Acid (PEDOT:PSS) Films as a Transparent Anode for Organic Thin-Film Solar Cells

Author *Tomohisa Ino, Yoshiyuki Muramatsu, Takeshi Fukuda, Keiji Ueno, Hajime Shirai (Saitama Univ., Japan)

Page p. 164

P1-68, ID 1018

Title	Real Time Ellipsometric Characterization of the Initial Growth Stage of 3,4-polyethylenedioxythiophene:polystyrenesulfonic Acid (PEDOT:PSS) Films by Electrospray Deposition for Organic Solar Cells
Author	*Tomohisa Ino, Takashi Asano, Takeshi Fukuda, Keiji Ueno, Hajime Shirai (Saitama Univ., Japan)
Page	p. 165

P1-69, ID 1071

Title	Organic Light-Emitting Diodes Based on Layered Films of Thiophene/Phenylene Co-Oligomers
Author	*Tomoaki Sengoku, Takeshi Yamao, Shu Hotta (Kyoto Inst. of Tech., Japan)
Page	p. 166

P1-70, ID 1183

Title	Study of Correlation between the Characteristics of Electronic Structure and Transport Properties of Organic Polymer based Semiconductor
Author	*Karina Aleman, Svetlana Mansurova, Andrey Kosarev (National Institute for Astrophysics, Optics and Electronics, Mexico), Klaus Meerholz, Sebastian Koeber (Univ. of Cologne, Germany)
Page	p. 167

P1-71, ID 1185

Title	Electrical Characteristics of a New Polymer Structures Based on the Cu(II) Complex
Author	*Vachagan Avanesyan, Ekaterina Vodkailo (Herzen Russian State Pedagogical Univ., Russian Federation)
Page	p. 168

P1-72, ID 1192

Title	Polarization and Surface Relief Gratings in Disperse Red 1 Doped Polyurethane Thin Films
Author	*Jelena Aleksejeva, Andrejs Gerbreders, Mara Reinfelde, Ugis Gertners, Janis Teteris (Univ. of Latvia, Latvia)
Page	p. 169

P1-73, ID 1229

Title	Determining Factor of Carrier Mobility in Pentacene Thin-Film Transistors: Influence of Substrate Surface and Growth Rate
Author	*Ryosuke Matsubara, Toshio Nomura, Masatoshi Sakai, Kazuhiro Kudo, Masakazu Nakamura (Chiba Univ., Japan)
Page	p. 170

Wednesday, August 24, 2011

Session 3A1 Si Photovoltaics Device Characterization
Time: 9:00 - 10:20 Wednesday, August 24, 2011
Location: Room 1
Chair: Yoshiaki Takeuchi (Mitsubishi Heavy Industry, Japan)

3A1-1, ID 1016 (Time: 9:00 - 9:40)

Title	(Invited Paper) Impurities in Thin-Film Silicon: Influence on Material Properties and Solar Cell Performance
Author	*Tsvetelina Merdzhanova, Jan Woerdenweber, Thilo Kilper, Uwe Zastrow (Forschungszentrum Jülich GmbH, Germany), Helmut Stiebig (Malibu GmbH & Co. KG, Germany), Wolfhard Beyer (Forschungszentrum Jülich GmbH/Malibu GmbH & Co. KG, Germany), Aad Gordijn (Forschungszentrum Jülich GmbH, Germany)
Page	p. 171

3A1-2, ID 1099 (Time: 9:40 - 10:00)

Title	EELS Measurements of Boron Concentration Profiles in p-a-SiC and n-i-p a-Si Solar Cells
Author	*Bas B. Van Aken (ECN Solar Energy, Netherlands), Martial Duchamp, Rafal E. Dunin-Borkowski (Tech. Univ. of Denmark, Denmark), Wim J. Soppe (ECN Solar Energy, Netherlands)
Page	p. 172

3A1-3, ID 1115 (Time: 10:00 - 10:20)

Title	Phosphorus Cross-Contamination in Single-Chamber Processes for Thin-Film Silicon Solar Cells
Author	*Jan Woerdenweber, Tsvetelina Merdzhanova, Thomas Zimmermann, Arjan Flikweert (Forschungszentrum Jülich GmbH, Germany), Helmut Stiebig, Wolfhard Beyer (Malibu GmbH & Co. KG, Germany), Aad Gordijn (Forschungszentrum Jülich GmbH, Germany)
Page	p. 173

Session 3A2 Si Photovoltaics Novel Structure
Time: 10:40 - 12:00 Wednesday, August 24, 2011
Location: Room 1
Chair: A. Masuda (AIST, Japan)

3A2-1, ID 1056 (Time: 10:40 - 11:20)

Title	(Invited Paper) Silicon Nanocrystals as Efficient and Fast Light Emitters
Author	*Katerina Kusova (Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i., Czech Republic)
Page	p. 174

3A2-2, ID 1222 (Time: 11:20 - 11:40)

Title	Fabrication and Characterization of Nanorod Solar Cells with Ultrathin a-Si Absorber Layers
Author	Yinghuan Kuang, Karine H.M. van der Werf, Z. Silvester Houweling, Marcel Di Vece, *Ruud E.I. Schropp (Utrecht Univ., Netherlands)
Page	p. 175

Session 3B1 Carbon Related Materials
Time: 9:00 - 10:20 Wednesday, August 24, 2011
Location: Room 2
Chair: Takashi Itoh (Gifu Univ., Japan)

3B1-1, ID 1014 (Time: 9:00 - 9:20)

Title	Noise Spectroscopy of MWCNT/HDPE Composites with Different Nanotube Concentrations
Author	*Heinz Christoph Neitzert, Carlo Barone, Sergio Pagano (Salerno Univ., Italy)
Page	p. 176

3B1-2, ID 1195 (Time: 9:20 - 9:40)

Title	Carbon Nanotube Torsional Actuator Based on Transition between Flattened and Tubular States
Author	*Ryosuke Senga, Kaori Hirahara, Yasutaka Yamaguchi, Yoshikazu Nakayama (Osaka Univ., Japan)
Page	p. 177

3B1-3, ID 1319 (Time: 9:40 - 10:00)

Title	Amorphous and Microcrystalline Silicon Diamond based Heterojunctions
Author	*Mohamed Boutchich, José Alvarez, Djicknoum Diouf (LGEP, France), Pere Roca i Cabarrocas (Ecole Polytechnique, France), M.Y Liao, I Masataka, Y Koide (NIMS, Japan), Jean Paul Kleider (LGEP, France)
Page	p. 178

Session 3B2 Oxide TFT II
Time: 10:40 - 12:00 Wednesday, August 24, 2011
Location: Room 2
Chair: J. Robertson (Univ. of Cambridge, U.K.)

3B2-1, ID 1012 (Time: 10:40 - 11:00)

Title	Amorphous Gallium-Indium-Zinc Oxide TFTs for Circuits and Display Backplanes on Foil
Author	*Ashutosh Kumar Tripathi (Holst Centre/TNO, Netherlands), Manoj Nag, Kris Myny (imec, Belgium), Bas van der Putten, Martin van Neer (Holst Centre/TNO, Netherlands), Jan Genoe, Soeren Steudel, Paul Heremans (imec, Belgium), Gerwin Gelinck (Holst Centre/TNO, Netherlands)
Page	p. 179

3B2-2, ID 1102 (Time: 11:00 - 11:20)

Title	Gate Metal-Controlled Logic Inverter with Two Amorphous GaSnZnO Thin-Film Transistors and its Photo-Gating Application
Author	*Hee Sung Lee, Chan Ho Park, Kwang Hyun Lee (Yonsei Univ., Republic of Korea), Dong Ho Kim, Hye Ri Kim (Korea Institute of Materials Science (KIMS), Republic of Korea), Seongil Im (Yonsei Univ., Republic of Korea)
Page	p. 180

3B2-3, ID 1282 (Time: 11:20 - 12:00)

Title	(Invited Paper) Device Physics of Amorphous In-Ga-Zn-O
Author	*Toshio Kamiya, Kenji Nomura, Katsumi Abe, Hideo Hosono (Tokyo Inst. of Tech., Japan)
Page	p. 181

Session 3C1 Chalcogenide Electrical and Optical Properties I
Time: 9:00 - 10:20 Wednesday, August 24, 2011
Location: Room 3
Chair: Alexander Kolobov (AIST, Japan)

3C1-1, ID 1314 (Time: 9:00 - 9:20)

Title	Ligand Field Splittings: A New Spectroscopic Probe for Medium Range Order in Non-Crystalline Oxides (SiO₂) and Chalcogenides (GeSe₂)
Author	*Gerald Lucovsky, Daniel Zeller, Kun Wu, Jerry L. Whitten (NC State Univ., U.S.A.)
Page	p. 182

3C1-2, ID 1276 (Time: 9:20 - 9:40)

Title	Local Environment of Nd³⁺ and Pressure-Tuning of Energy Transfer in Nd-Doped Ge-Ga-S Glasses
Author	Kazuki Matsui, *Kiyoto Matsuishi (Univ. of Tsukuba, Japan)
Page	p. 183

3C1-3, ID 1130 (Time: 9:40 - 10:00)

Title	Anomalous Optical Conductivity in Disordered Condensed Materials
Author	*Koichi Shimakawa, Takashi Itoh (Gifu Univ., Japan), Hiroyoshi Naito (Osaka Prefecture Univ., Japan), Safa Kasap (Saskatchewan Univ., Canada)
Page	p. 184

3C1-4, ID 1106 (Time: 10:00 - 10:20)

Title	Electronic Structure and Magnetism of IV-VI Compound based Magnetic Semiconductors
Author	*Kazunori Sato, Hiroshi Katayama-Yoshida (Osaka Univ., Japan)
Page	p. 185

Session 3C2 Chalcogenide Electrical and Optical Properties II
Time: 10:40 - 12:00 Wednesday, August 24, 2011
Location: Room 3
Chair: Safa Kasap (Univ. of Saskatchewan, Canada)

3C2-1, ID 1023 (Time: 10:40 - 11:00)

Title	Optical and Thermal Annealing of As₂S₃ Films for Optical Waveguides
Author	*Duk-Yong Choi, Steve Madden, Rongping Wang, Sukanta Debbarma, Barry Luther-Davies (Australian National Univ., Australia)
Page	p. 186

3C2-2, ID 1127 (Time: 11:00 - 11:20)

Title	Ag-Conducting Chalcogenide Glasses, Their Properties Important for Potential Application as Conductive-Bridge-Memory Materials
Author	*Tomas Wagner, Stepan Stehlik, Miroslav Bartos, Silvie Valkova, Iva Voleska, Jakub Kolar (Univ. of Pardubice, Czech Republic), Vitezslav Zima (Czech Academy of Sciences, Czech Republic), Jaakko Akola (Univ. of Jyväskylä, Finland), Robert O. Jones (Forschungszentrum Jülich GmbH, Germany), Miloslav Frumar (Univ. of Pardubice, Czech Republic)
Page	p. 187

3C2-3, ID 1323 (Time: 11:20 - 11:40)

Title	As₂S₃-based Heterostructures and Memory Cell Designed upon Them
Author	*Adam Lőrinczi, Mihai Popescu, Alin Velea, Iosif-Daniel Şimăndan (National Institute of Materials Physics, Romania)
Page	p. 188

3C2-4, ID 1320 (Time: 11:40 - 12:00)

Title	Complex Langmuir-Blodgett Multilayer Films with Carbon Nanotubes and As₂S₃ Nanoparticles
Author	*Iosif-Daniel Simandan, Alin Velea, Mihai Popescu, Adam Lorinczi, Florinel Sava (National Institute R&D of Materials Physics, Romania)
Page	p. 189

Thursday, August 25, 2011

Session 4A1 Si Transport Properties
Time: 9:00 - 10:20 Thursday, August 25, 2011
Location: Room 1
Chair: J. Kocka (Academy of Sciences of the Czech Republic, Czech Republic)

4A1-1, ID 1344 (Time: 9:00 - 9:40)

Title	(Invited Paper) a-Si:H Transport Parameters from Experiments based on Photoconductivity
Author	*Christophe Longeaud (Laboratoire de Génie Electrique de Paris, France), J. A. Schmidt (INTEC (UNL-CONICET), Argentina)
Page	p. 190

4A1-2, ID 1206 (Time: 9:40 - 10:00)

Title	Charge Carrier Transport in Solid State Crystallized Polycrystalline Silicon Films on Glass
Author	*Lars-Peter Scheller, Norbert H. Nickel (Helmholtz-Zentrum Berlin für Materialien und Energie, Germany)
Page	p. 191

4A1-3, ID 1349 (Time: 10:00 - 10:20)

Title	What is the Origin of Tail States in Amorphous Semiconductors?
Author	*Sandor Kugler (Budapest Univ. of Tech. and Economics, Hungary)
Page	p. 192

Session 4A2 Si Metastability
Time: 10:40 - 12:00 Thursday, August 25, 2011
Location: Room 1
Chair: M. Stutzmann (Tech. Univ. of Munich, Germany)

4A2-1, ID 1328 (Time: 10:40 - 11:00)

Title	Reduction of Staebler-Wronski Effect in a-Si:H by Post-Deposition Thermal Treatments that Change Network Nanostructure
Author	*Paul Stradins, David C. Bobela (National Renewable Energy Laboratory, U.S.A.), Baojie Yan (United Solar Ovonic LLC, U.S.A.), Howard M. Branz (National Renewable Energy Laboratory, U.S.A.)
Page	p. 193

4A2-2, ID 1226 (Time: 11:00 - 11:20)

Title	The Dangling-Bond Defect in Amorphous Silicon: Statistical Random Versus Kinetically Driven Defect Geometries
Author	*Christoph Freysoldt, Gernot Pfanner, Joerg Neugebauer (Max-Planck-Institut fuer Eisenforschung, Germany)
Page	p. 194

4A2-3, ID 1236 (Time: 11:20 - 11:40)

Title	Native and Light-Induced Defects in Hydrogenated Amorphous Silicon Investigated by Electron-Paramagnetic Resonance
Author	*Matthias Fehr, Alexander Schnegg, Bernd Rech (Helmholtz-Zentrum Berlin für Materialien und Energie, Institut für Silizium-Photovoltaik, Germany), Christian Teutloff, Robert Bittl (Freie Univ. Berlin, Germany), Oleksandr Astakhov, Friedhelm Finger (Forschungszentrum Jülich GmbH, Germany), Klaus Lips (Helmholtz-Zentrum Berlin für Materialien und Energie, Institut für Silizium-Photovoltaik, Germany)
Page	p. 195

4A2-4, ID 1312 (Time: 11:40 - 12:00)

Title	A Chemical Bonding Ab-Initio Theory Model for Stabler-Wronski Effect Defect Metastability in a-Si:H Phovoltaic Devices
Author	*Gerald Lucovsky, Hang Yang, Jerry L. Whitten (North Carolina State Univ., U.S.A.)
Page	p. 196

Session 4A3 Si Light Management I
Time: 13:20 - 15:00 Thursday, August 25, 2011
Location: Room 1
Chair: A. Fejfar (Academy of Sciences of the Czech Republic, Czech Republic)

4A3-1, ID 1080 (Time: 13:20 - 14:00)

Title	(Invited Paper) Photonic and Plasmonic Crystal based Enhancement of Solar Cells- Theory of Overcoming the Lambertian Limit
Author	*Rana Biswas, Chun Xu (Iowa State Univ. and Ames Laboratory, U.S.A.)
Page	p. 197

4A3-2, ID 1132 (Time: 14:00 - 14:20)

Title	Application of Dielectric Distributed Bragg Back Reflector in Thin-Film Silicon Solar Cells
Author	*Olindo Isabella, Miro Zeman (Delft Univ. of Tech., Netherlands)
Page	p. 198

4A3-3, ID 1325 (Time: 14:20 - 14:40)

Title	Trapping and Converting Light with Silicon Nanowires in Thin Film Silicon Solar Cells
Author	*Benedict O'Donnell, Linwei Yu, Martin Foldyna, Pere Roca i Cabarrocas (Ecole Polytechnique, France)
Page	p. 199

4A3-4, ID 1336 (Time: 14:40 - 15:00)

Title	Enhanced Photoluminescence and Raman Scattering in Silicon Nanowires and Photonic Crystals
Author	*Victor Yu. Timoshenko, Kirill A. Gonchar, Dmitry A. Mamichev, Leonid A. Golovan (Moscow State M.V. Lomonosov Univ., Russian Federation), Gaukhar K. Mussabek, Valery E. Nikulin, Toktar I. Taurbaev (Al Farabi Kazakh National Univ., Kazakhstan), Vladimir A. Sivakov, Silke H. Christiansen (Institute of Photonic Technology, Germany)
Page	p. 200

Session 4A4 Si Light Management II
Time: 15:20 - 17:00 Thursday, August 25, 2011
Location: Room 1
Chair: P. Roca i Cabarrocas (Ecole Polytechnique, France)

4A4-1, ID 1136 (Time: 15:20 - 15:40)

Title	Theoretical and Experimental Limits of Light Capture in 3-Dimensional Thin Film Silicon Nanostructures
Author	*Aleš Poruba (Solartec, Czech Republic), Petr Klapetek (Czech Metrology Institute, Czech Republic), Milan Vaněček (Institute of Physics, Academy of Sciences of the Czech Republic, Czech Republic)
Page	p. 201

4A4-2, ID 1194 (Time: 15:40 - 16:00)

Title	Design of Periodic Arrays of Si Crystals on Nano-Imprinted Sol-Gel Coated Glass by e-Beam Evaporation
Author	*Tobias Sontheimer (Helmholtz Zentrum Berlin fur Materialien und Energie, Germany), Eveline Rudigier-Voigt (SCHOTT AG, Germany), Daniel Lockau (Konrad-Zuse-Zentrum fur Informationstechnik Berlin, Germany), Matthias Bockmeyer, Volker Hagemann (SCHOTT AG, Germany), Carola Klimm, Christiane Becker, Bernd Rech (Helmholtz Zentrum Berlin fur Materialien und Energie, Germany)
Page	p. 202

4A4-3, ID 1261 (Time: 16:00 - 16:20)

Title	A Novel Structured Plastic Substrate for Light Confinement in Thin Film Silicon Solar Cells by a Geometric Optical Effect
Author	M. M. de Jong, *J. K. Rath, R. E. I. Schropp (Utrecht Univ., Netherlands), P. J. Sonneveld, G. L. A. M. Swinkels, H. J. Holterman (Wageningen UR Glastuinbouw, Netherlands), J. Baggerman, C. J .M. van Rijn (Aquamarijn, Netherlands), Edward Hamers (Nuon Helianthos, Netherlands)
Page	p. 203

4A4-4, ID 1057 (Time: 16:20 - 16:40)

Title	Efficient Thin Film Si Solar Cells on Novel Conical Photo-Plasmon Structures
Author	Sambit Pattnaik, Nayan Chakravarty, Rana Biswas (Iowa State Univ., U.S.A.), Dennis Slafer (Lightwave Power, U.S.A.), *Vikram Dalal (Iowa State Univ., U.S.A.)
Page	p. 204

4A4-5, ID 1230 (Time: 16:40 - 17:00)

Title	Capacitive Active Band-Pass Filters based on SiC Multilayer Structures
Author	*Manuel A. Vieira, Manuela Vieira, Paula Louro, Miguel Fernandes, Manuel Barata (ISEL, Portugal), Adolfo S. Garção (FCT-UNL, Portugal)
Page	p. 205

Session 4B1 Si Devices
Time: 9:00 - 10:20 Thursday, August 25, 2011
Location: Room 2
Chair: Keisuke Ohdaira (JAIST, Japan)

4B1-1, ID 1272 (Time: 9:00 - 9:20)

Title	Fabrication of Single-Layered Porous Silicon for Rapid Biosensing with Functionalized Superparamagnetic Nanobeads
Author	*Pil Ju Ko, Ryousuke Ishikawa, Yoshitaka Morimoto, Tsukasa Takamura, Adarsh Sandhu (Tokyo Inst. of Tech., Japan)
Page	p. 206

4B1-2, ID 1052 (Time: 9:20 - 9:40)

Title	Light Amplification and Optical Gain from O-Si-N Bonding States in a-SiNxOy Waveguide
Author	*Kunji Chen, Hengping Dong, Rui Huang, Wei Li, Zhongyuan Ma, Jun Xu, Xinfan Huang (Nanjing Univ., China), Gong-Ru Lin, Chung-Lun Wu (National Taiwan Univ., Taiwan)
Page	p. 207

4B1-3, ID 1235 (Time: 9:40 - 10:00)

Title	Optoelectronic characterisation of demultiplexer devices based on a-SiC:H
Author	P. Louro, M. A. Vieira (ISEL, Portugal), *M. Vieira (CTS-UNINOVA, Portugal), T. Silva, M. Fernandes, M. Barata (ISEL, Portugal)
Page	p. 208

4B1-4, ID 1097 (Time: 10:00 - 10:20)

Title	The Effect of Bias Stress on 1/f Noise in a-Si:H FETs
Author	*Robert E. Johanson, Kang-Hyun Kim (Univ. of Saskatchewan, Canada), Arokia Nathan (Univ. College London, U.K.), Safa Kasap (Univ. of Saskatchewan, Canada)
Page	p. 209

Session 4B2 Poly-Si Preparation I
Time: 10:40 - 12:00 Thursday, August 25, 2011
Location: Room 2
Chair: N. H. Nickel (Helmholtz-Zentrum, Germany)

4B2-1, ID 1216 (Time: 10:40 - 11:00)

Title	Optimization of Heat Transition Layer in Infrared Laser Crystallization for High Performance Si Thin Film Transistors
Author	*Sul Lee, Jun Hyeon Bae, Byung Gook Choi, Ki-tae Kim, Sung Ki Kim, Kwon-shik Park, JongUk Bae, Chang-Dong Kim, Myungchul Jun, YongKee Hwang, In-Jae Chung (LG Display, Republic of Korea)
Page	p. 210

4B2-2, ID 1191 (Time: 11:00 - 11:20)

Title	Mechanism and Control of Crack Generation in Glass Substrates during Crystallization of a-Si Films by Flash Lamp Annealing
Author	*Keisuke Ohdaira, Naohito Tomura, Shohei Ishii, Keisuke Sawada, Hideki Matsumura (JAIST, Japan)
Page	p. 211

4B2-3, ID 1084 (Time: 11:20 - 11:40)

Title	Reduction in the Defect Density of Flash-Lamp-Crystallized Polycrystalline Silicon Films by Conventional Furnace Annealing
Author	*Keisuke Sawada, Shohei Ishii, Naohito Tomura (JAIST, Japan), Keisuke Ohdaira (PRESTO, Japan Science and Technology Agency (JST), Japan), Hideki Matsumura (JAIST, Japan)
Page	p. 212

4B2-4, ID 1238 (Time: 11:40 - 12:00)

Title	Preferential Grain Orientation in Laser-Crystallized Polycrystalline Silicon Thin Films
Author	*Moshe Weizman, Carola Klimm, Norbert Nickel, Bernd Rech (Helmholtz-Zentrum Berlin für Materialien und Energie, Germany)
Page	p. 213

Session 4B3 Poly-Si Preparation II
Time: 13:20 - 15:00 Thursday, August 25, 2011
Location: Room 2
Chair: H. Matsumura (JAIST, Japan)

4B3-1, ID 1033 (Time: 13:20 - 13:40)

Title	Dopant Enhanced Solid Phase Epitaxy in Silicon and Germanium
Author	*Brett C. Johnson (Japan Atomic Energy Agency, Japan), Jeffrey C. McCallum (Univ. of Melbourne, Australia)
Page	p. 214

4B3-2, ID 1061 (Time: 13:40 - 14:00)

Title	pn-Diodes Prepared by Aluminum-Induced Layer Exchange
Author	*Michael Algasinger, Christian Jäger, Tobias Antesberger, Martin Stutzmann (Technische Univ. München, Germany)
Page	p. 215

4B3-3, ID 1277 (Time: 14:00 - 14:20)

Title	Layered Structure in As-Deposited SiGe Thin Films by rf-PECVD with SiH₄ and GeF₄ and Their Enhanced Solid-State Crystallization at Low-Temperatures
Author	*Joo-won Yoon, Yoshito Kamiura, Wei Zhang, Sinae Kim, Jun-ichi Hanna (Tokyo Inst. of Tech., Japan)
Page	p. 216

4B3-4, ID 1062 (Time: 14:20 - 14:40)

Title	Phosphorus- and Boron- Doped Thin Polycrystalline Si Layers on Glass Prepared by Metal-Induced Layer Exchange
Author	*Tobias Antesberger, Michael Algasinger, Mehdi Kashani, Christian Jäger, Thomas Wassner, Martin Stutzmann (Technische Univ. München, Germany)
Page	p. 217

Session 4B4 Chalcogenide Structure
Time: 15:20 - 17:00 Thursday, August 25, 2011
Location: Room 2
Chair: Tomas Wagner (Univ. of Pardubice, Czech Republic)

4B4-1, ID 1285 (Time: 15:20 - 15:40)

Title	An Ab-Initio XANES Study of Ge-Sb-Te Alloys
Author	*Milos Krbal, Alexander V. Kolobov, Paul Fons, Junji Tominaga (National Institute of Advanced Industrial Science & Technology (AIST), Japan), Stephen R. Elliott, Jozsef Hegedus (Univ. of Cambridge, U.K.), Tomoya Uruga (SPring8, Japan Synchrotron Radiation Institute(JASRI), Japan)
Page	p. 218

4B4-2, ID 1151 (Time: 15:40 - 16:00)

Title	Atomic Structure and Rigidity Transition in As-Se Glasses Studied by Anomalous X-Ray Scattering
Author	*Shinya Hosokawa (Hiroshima Inst. of Tech., Japan), Wolf-Christian Pilgrim (Univ. of Marburg, Germany), Isamu Oh (Osaka Univ., Japan), Nathalie Boudet, Jean-Francois Berar (CNRS, France), Shinji Kohara (SPring-8/JASRI, Japan), Punit Boolchand (Univ. of Cincinnati, U.S.A.)
Page	p. 219

4B4-3, ID 1009 (Time: 16:00 - 16:20)

Title	The Role of Chemical Compositions and Mean Coordination Number in Ge-As-Se Ternary Glasses
Author	*Rongping Wang, Duk Yong Choi, Steve Madden, Barry Luther-Davies (Australian National Univ., Australia)
Page	p. 220

4B4-4, ID 1186 (Time: 16:20 - 16:40)

Title	Similarities and Differences in Local Structure and Optical Parameters of Glassy Isoelectronic Ternary Chalcogenides
Author	*Eldar Mammadov (Azerbaijan National Academy of Sciences, Azerbaijan), H. Uchiki, N. Uchitomi (Nagaoka Univ. of Tech., Japan), U. Miyamoto, K. Wakita (Chiba Inst. of Tech., Japan), S. Mehdiyeva (Azerbaijan National Academy of Sciences, Azerbaijan), P. C. Taylor (Colorado School of Mines, U.S.A.)
Page	p. 221

4B4-5, ID 1348 (Time: 16:40 - 17:00)

Title	Se–Te Nano-Alloys: Morphology Control from Nanoparticles to Nanoribbons
Author	*Gurinder K. Ahluwalia (College of North Atlantic, Canada), Mandeep Singh Bakshi (Wilfred Laurier Univ., Canada)
Page	p. 222

Session 4C1 Oxide Devices I
Time: 9:00 - 10:20 Thursday, August 25, 2011
Location: Room 3
Chair: Hajime Shirai (Saitama Univ., Japan)

4C1-1, ID 1199 (Time: 9:00 - 9:20)

Title	Preparation of p-Type NiO Film for a-Si Solar Cells
Author	*Hironori Natsuhara, Shuhei Miura, Keita Hori, T. Kumasawa, Y. Noda, Z. Xiang Qu, F. Ohashi, Norimitsu Yoshida, Shuichi Nonomura (Gifu Univ., Japan)
Page	p. 223

4C1-2, ID 1213 (Time: 9:20 - 9:40)

Title	Work Function Measurements on Transparent Conductive Oxides for Thin Film Solar Cells
Author	*Paz Carreras (Univ. de Barcelona, Spain), Sebastian Gutmann (Univ. of South Florida, U.S.A.), Aldrin Antony (Univ. de Barcelona, Spain), Rudy Schlaf (Univ. of South Florida, U.S.A.), Joan Bertomeu (Univ. de Barcelona, Spain)
Page	p. 224

4C1-3, ID 1075 (Time: 9:40 - 10:20)

Title	(Invited Paper) Energy Conversion between Photon-Electron & Spin in Oxide Semiconducting Super Lattices and Quantum Wells
Author	*Hitoshi Tabata, Hiroaki Matsui, Munetoshi Seki (Univ. of Tokyo, Japan)
Page	p. 225

Session 4C2 Oxide Devices II
Time: 10:40 - 12:00 Thursday, August 25, 2011
Location: Room 3
Chair: Ashutosh Kumar Tripathi (Holst Centre/TNO, Netherlands)

4C2-1, ID 1241 (Time: 10:40 - 11:00)

Title	Variation of Back Reflector Morphology in n-i-p Microcrystalline Silicon Thin Film Solar Cells Using Texture-Etched ZnO
Author	*Wanjiao Boettler, Vladimir Smirnov, Silvia Jorke, Juergen Huepkes, Friedhelm Finger (Forschungszentrum Jülich GmbH, Germany)
Page	p. 226

4C2-2, ID 1244 (Time: 11:00 - 11:20)

Title	Novel A-Si:H/µc-Si:H Tandem Cell With Lower Optical Loss
Author	*Bancha Janthong, Aswin Hongsingthong, Taweewat Krajangsang, Liping Zhang, Porponth Sichanugrist, Makoto Konagai (Tokyo Inst. of Tech., Japan)
Page	p. 227

4C2-3, ID 1095 (Time: 11:20 - 11:40)

Title	HfO₂ Nanoparticles Embedded within a SOG-Based Oxide Matrix as Charge Trapping Layer for SOHOS-Type Memory Applications
Author	*Joel Molina, Rafael Ortega, Wilfrido Calleja, Pedro Rosales, Carlos Zuniga, Alfonso Torres (National Institute of Astrophysics, Optics and Electronics, Mexico)
Page	p. 228

4C2-4, ID 1211 (Time: 11:40 - 12:00)

Title	Growh of Highly-Oriented, High Mobility Cu₂O for Heterojunction Amorphous-IGZO/Cu₂O Solar Cell
Author	*Kyeongmi Lee, Kenji Nomura (Tokyo Inst. of Tech., Japan), Hiroshi Yanagi (Univ. of Yamanashi, Japan), Toshio Kamiya, Hideo Hosono (Tokyo Inst. of Tech., Japan)
Page	p. 229

Session 4C3 Nano-Si Structure
Time: 13:20 - 15:00 Thursday, August 25, 2011
Location: Room 3
Chair: Shuichi Nonomura (Gifu Univ., Japan)

4C3-1, ID 1060 (Time: 13:20 - 13:40)

Title	Determination of the Defect Density in Thin Film Amorphous and Microcrystalline Silicon from ESR Measurements: The Influence of the Sample Preparation Procedure
Author	*Lihong Xiao (Forschungszentrum Jülich GmbH/Technische Univ. München, Germany), Oleksandr Astakhov, Friedhelm Finger (Forschungszentrum Jülich GmbH, Germany), Martin Stutzmann (Technische Univ. München, Germany)
Page	p. 230

4C3-2, ID 1297 (Time: 13:40 - 14:00)

Title	The Amorphous and Crystalline Densities in Tetrahedrally Bonded Semiconductors
Author	*Mihai Popescu, Alin Velea (National Institute of Materials Physics, Romania)
Page	p. 231

4C3-3, ID 1078 (Time: 14:00 - 14:20)

Title	Nanostructure and Interfaces In Hydrogenated Nanocrystalline Silicon
Author	*Kristin G. Kiriluk, Don L. Williamson, Jeremy Fields, P. Craig Taylor (Colorado School of Mines, U.S.A.), Baojie Yan (United Solar Ovonic, LLC, U.S.A.), David C. Bobela (National Renewable Energy Laboratory, U.S.A.)
Page	p. 232

4C3-4, ID 1257 (Time: 14:20 - 14:40)

Title	Microcrystalline Silicon Thin Films studied by Photoconductive Atomic Force Microscopy
Author	*Martin Ledinsky, Aliaksei Vetushka, Jiri Stuchlik, Bohuslav Rezek, Antonin Fejfar, Jan Kocka (Institute of Physics, Academy of Sciences of the Czech Republic, Czech Republic)
Page	p. 233

Session 4C4 Nano-Si Characterization
Time: 15:20 - 17:00 Thursday, August 25, 2011
Location: Room 3
Chair: Bohuslav Rezek (Czech, Academy of Sci., Czech Republic)

4C4-1, ID 1263 (Time: 15:20 - 15:40)

Title	A Calibration Method for Accurate Prediction of Amorphous to Nanocrystalline Transition from Line Intensities of Optical Emission Spectrum
Author	*J. K. Rath, A. D. Verkerk, R. E. I. Schropp (Utrecht Univ., Netherlands), B. Boussadkat, W. J. Goedheer (FOM Institute for Plasma Physics Rijnhuizen, Netherlands)
Page	p. 234

4C4-2, ID 1304 (Time: 15:40 - 16:00)

Title	Theoretical Calculations and Experimental Evidence of Photoluminescence Enhancement in Ultrathin Layer with Silicon Nanocrystals
Author	*Denis Zhigunov (M.V. Lomonosov Moscow State Univ., Russian Federation), Sergey Dyakov (M.V. Lomonosov Moscow State Univ.; Trinity College Dublin, Russian Federation), Andrey Emelyanov, Natalia Shvydun (M.V. Lomonosov Moscow State Univ., Russian Federation), Andreas Hartel, Daniel Hiller, Margit Zacharias (Albert-Ludwigs-Univ. Freiburg, Germany)
Page	p. 235

4C4-3, ID 1203 (Time: 16:00 - 16:20)

Title	Metastability Effects in Hydrogenated Microcrystalline Silicon Thin Films Investigated by the Dual Beam Photoconductivity Method
Author	*Mehmet Günes, Gökhan Yilmaz, Hamza Cansever, Elif Turan (Mugla Univ., Turkey), Vladimir Smirnov, Friedhelm Finger, Josef Klomfass (Forschungszentrum Jülich GmbH, Germany), Rudolf Brüggemann (Institut für Physik, Carl von Ossietzky Universität Oldenburg, Germany)
Page	p. 236

4C4-4, ID 1180 (Time: 16:20 - 16:40)

Title	Electrical Property of Nano-Crystalline Silicon Thin-Films Prepared by Very High Frequency Plasma Deposition System
Author	*Yoshifumi Nakamine, Tetsuo Kodera, Ken Uchida, Mutsuko Hatano, Shunri Oda (Tokyo Inst. of Tech., Japan)
Page	p. 237

4C4-5, ID 1350 (Time: 16:40 - 17:00)

Title	Spectroscopic Detection of Medium Range Order in Device-Grade a-Si:H: Dangling Bond Defects, and the Staebler-Wronski Effect
Author	*Gerald Lucovsky, G. N. Parsons, D. Zeller, K. Wu, B. Papas, J. Whitten (North Carolina State Univ., U.S.A.), R. Lujan, R. A. Street (Palo Alto Reseach Center, a Xerox Company, U.S.A.)
Page	p. 238

Session P2 Poster II
Time: 17:20 - 19:00 Thursday, August 25, 2011
Location: Reception Hall
Chair: Takashi Kobayashi (Osaka Prefecture Univ., Japan)

[Si Photovoltaics (Device Characterization, Novel Structure, Light Management)]

P2-1, ID 1112

Title Properties of Thin-Film Silicon Solar Cells at Very High Irradiance

Author Steve Reynolds, Suman Anand (Univ. of Dundee, U.K.), Amjad Meftah (Univ. of Biskra, Algeria), *Vlad Smirnov (Forschungszentrum Jülich GmbH, Germany)

Page p. 239

P2-2, ID 1137

Title	Degradation Study of Amorphous Hydrogenated Silicon p-i Interface from Coplanar Geometry FTPS Measurement
Author	*Aleš Poruba (Solartec, Czech Republic), Jakub Holovský, Zdeněk Remeš, Milan Vaněček (Institute of Physics, Academy of Sciences of the Czech Republic, Czech Republic)
Page	p. 240

P2-3, ID 1156

Title	Study of B, P Doping and Its Effect on Electronic Properties of Ge₉₆ Si_0.03:H Films Deposited by Low Frequency PECVD at Low Temperature
Author	*Ismael Cosme, Andrey Kosarev, Carlos Zuniga (National Institute for Astrophysics, Optics and Electronics, Mexico)
Page	p. 241

P2-4, ID 1161

Title	Effect of Grain Boundary on Performance of Hydrogenated Microcrystalline Silicon Solar Cells
Author	Wenbo Peng, *Xiangbo Zeng, Shiyong Liu, Wenjie Yao, Xiaobing Xie, Chao Wang, Ping Yang, Xianbo Liao (Chinese Academy of Sciences, China)
Page	p. 242

P2-5, ID 1248

Title	Interface Conductivity in Amorphous-Crystalline Silicon Heterojunctions Prepared Using DC Saddle-Field PECVD
Author	B. Halliop (Univ. of Toronto, Canada), M. F. Salaun, W. Favre, R. Varache, M. E. Gueunier-Farret, *J. P. Kleider (Laboratoire de Genie Electrique de Paris, France), N. P. Kherani (Univ. of Toronto, Canada)
Page	p. 243

P2-6, ID 1279

Title	Investigation of the Photovoltaic Performance of the Polycrystalline Silicon p-n Junction by a Photothermal Measurement
Author	*Atsuhiko Fukuyama, Daisuke Ishibashi, Yohei Sato, Takatoshi Yasui, Kentaro Sakai, Hidetoshi Suzuki, Kensuke Nishioka, Tetsuo Ikari (Univ. of Miyazaki, Japan)
Page	p. 244

P2-7, ID 1292

Title	Influence of Textured Surfaces on the Interfacial Properties of HIT Solar Cells
Author	*Guorong Li, Yuqin Zhou, Fengzhen Liu, Meifang Zhu (Chinese Academy of Sciences, China)
Page	p. 245

P2-8, ID 1072

Title	Nano-Cylinder Structure on the Single/ Poly-Silicon Solar Cells
Author	*Sheng-Hui Chen, Yu-Wen Yeh, I-Ting Shih, Chia-Hua Chan (National Central Univ., Taiwan)
Page	p. 246

P2-9, ID 1193

Title	Inverted-ALILE Process for Thin Film Si Solar Cells
Author	*Masayoshi Takeuchi (Tokyo Inst. of Tech., Japan), Takehiko Nagai, Hitoshi Sai, Ivan Turkevych, Michio Kondo (AIST, Japan)
Page	p. 247

P2-10, ID 1172

Title	Localized Surface Plasmon Enhanced Microcrystalline-Silicon Solar Cells
Author	*Jakapan Chantana, Yanqiu Yang, Yasushi Sobajima, Chitose Sada, Akihisa Matsuda, Hiroaki Okamoto (Osaka Univ., Japan)
Page	p. 248

P2-11, ID 1177

Title	Refractive Index Calculation for Composites and Its Application in Fabricating Porous Silicon based Photonic Structures
Author	*J. Anto Pradeep, Pratima Agarwal (Indian Inst. of Tech. Guwahati, India)
Page	p. 249

P2-12, ID 1326

Title	Comparison between Randomly Textured and Periodically Textured Back-Reflectors for Enhanced Solar Cells
Author	Joydeep Bhattacharya (Iowa State Univ., U.S.A.), *Rana Biswas (Iowa State Univ. & Ames Laboratory, U.S.A.), Nayan Chakravarty, Sambit Pattnaik, Vikram Dalal (Iowa State Univ., U.S.A.), Eric A. Schiff (Syracuse Univ., U.S.A.)
Page	p. 250

[Nano-Si Preparation, Nano-Si Characterization, Si Microstructure, Si Quantum structure]

P2-13, ID 1187

Title Effect of Aluminum Induced Crystallization on the Growth of Nanocrystalline Silicon within Amorphous Silicon Carbon Alloy Thin Films

Author Arindam Kole, *Partha Chaudhuri (Indian Association for the Cultivation of Science, India)

Page p. 251

P2-14, ID 1189

Title	Heterojunction Diodes of N-Doped Nanocrystalline 3C-SiC:H Prepared on p-Type c-Si from SiH₄/CH₄/N₂ with Varying H₂ Dilution Ratios
Author	*Shin-ichiro Sato, Akimori Tabata (Nagoya Univ., Japan)
Page	p. 252

P2-15, ID 1267

Title	Low Pression Growth of Nanocrystalline Silicon Prepared by Argon Diluted Silane PECVD
Author	*Rachid Amrani, Yvan Cuminal, Frederic Pichot, Alain Foucaran (Univ. de Montpellier II, France), Larbi Chahed (Univ. d'Oran, Algeria)
Page	p. 253

P2-16, ID 1291

Title	Size Regulation of Si Nanoparticles by Photon-Enhanced Chemical Etching
Author	*Shogo Azuma, Seiichi Sato, Keisaku Kimura (Univ. of Hyogo, Japan)
Page	p. 254

P2-17, ID 1046

Title	Luminescence Decay in Hydrogenated Amorphous Silicon and Silicon Nanostructures
Author	*Kouhei Tsushima, Hitoshi Nakata, Kunitaka Monji (Nihon Univ., Japan), Hidenori Deki (Hiroshima Kokusai Gakuin Univ., Japan), Kazuro Murayama (Nihon Univ., Japan)
Page	p. 255

P2-18, ID 1070

Title	Agglomeration and Size Distribution of Organically Passivated Silicon Nanocrystals in Different Solvents Studied by AFM
Author	*Ladislav Fekete, Katerina Kusova, Irena Kratochvilova, Ivan Pelant, Alexander Kovalenko (Institute of Physics of the ASCR, v.v.i., Czech Republic), Petr Stepanek (Institute of Macromolecular Chemistry of the ASCR, v.v.i., Czech Republic)
Page	p. 256

P2-19, ID 1228

Title	Electronic and Optical Properties Calculation of Ge_1−x−ySi_xSn_y Ternary Alloy Nanostructure
Author	*Pairot Moontragoon, Thanusit Burinprakhon (Khon Kaen Univ., Thailand), Santi Maensiri (Suranaree Univ. of Tech., Thailand), Nenad Vukmirovic (Univ. of Belgrade, Yugoslavia), Zoran Ikonic, Paul Harrison (Univ. of Leeds, U.K.)
Page	p. 257

P2-20, ID 1332

Title	Silicon Nanocrystals as Sonosensitizers for Biomedical Applications
Author	*Victor Yu. Timoshenko, Lubov A. Osminkina, Maxim B. Gongalsky (Moscow State M.V. Lomonosov Univ., Russian Federation), Andrey A. Kudryavtsev (Institute of Theoretical and Experimental Biophysics of RAS, Russian Federation)
Page	p. 258

P2-21, ID 1053

Title	Determination Factor of <110> Direction Growth in Microcrystalline Silicon Thin Film Deposition
Author	*Kimihiko Saito (Photovoltaic Power Generation Technology Research Association, Japan), Michio Kondo (AIST, Japan)
Page	p. 259

P2-22, ID 1174

Title	Effects of Deposition Conditions on the Structure of Microcrystalline Silicon Carbide Thin Films by Hot-Wire CVD Method
Author	*Norimitsu Yoshida, Sho Terazawa, Kotaro Hayashi, Tomonari Hamaguchi, Hironori Natsuhara, Shuichi Nonomura (Gifu Univ., Japan)
Page	p. 260

P2-23, ID 1242

Title	Effect of Silane Flow Rate on Silicon Films Deposited by HWCVD
Author	Purabi Gogoi, Himanshu S. Jha, *Pratima Agarwal (Indian Inst. of Tech. Guwahati, India)
Page	p. 261

P2-24, ID 1040

Title	Thermal Annealing of a-Si/Au Superlattice Thin Films
Author	*Masami Aono, Masakazu Takahashi, Hiroaki Takiguchi, Yoichi Okamoto, Nobuaki Kitazawa, Yoshihisa Watanabe (National Defense Academy, Japan)
Page	p. 262

P2-25, ID 1155

Title	Formation of Gold Nanoparticles Embedded in A Silicon Film
Author	*Takashi Ueda, Masami Aono, Yuji Doshida, Hisashi Miyazaki, Yoichi Okamoto (National Defense Academy, Japan)
Page	p. 263

P2-26, ID 1159

Title	The Role of Nitridation of nc-Si Dots in Improving Performance of nc-Si Nonvolatile Memory
Author	*Xinye Qian, Kunji Chen, Guangyuan Liu, Xiangao Zhang, Xiaofan Jiang, Zhongyuan Ma, Zhonghui Fang, Xinfan Huang (Nanjing Univ., China)
Page	p. 264

P2-27, ID 1165

Title	Direct Observation of Resistive Switching Behavior from nc-Si Dot Film at Room Temperature
Author	Guoyin Xia, *Zhongyuan Ma, Xiaofan Jiang, Zhonghui Fan, Jun Xu, Ling Xu, Kunji Chen, Xinfan Huang (Nanjing Univ., China)
Page	p. 265

P2-28, ID 1181

Title	Influence of Annealing Temperature and Au Concentration on The Electrical Properties of Multilayered a-Ge/Au Films
Author	*Hisashi Miyazaki, Masami Aono, Hiroaki Takiguchi, Takashi Ueda, Yoichi Okamoto (National Defense Academy, Japan)
Page	p. 266

P2-29, ID 1231

Title	Study, Deeposition and Characterization of Polymorphous Germanium Films Prepared by Low Frequency PECVD
Author	*Mario Moreno, Alfonso Torres (Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Mexico), Roberto Ambrosio (Universidad Autónoma de Ciudad Juárez, Mexico), Joel Molina, Alfonso Torres-Rios, Pedro Rosales (Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Mexico), Aurelio Heredia (Universidad Popular Autónoma del Estado de Puebla, Mexico)
Page	p. 267

P2-30, ID 1341

Title	Room Temperature Coulomb Blockade Effect Produced by Silicon Nanoparticles Embedded in Silicon Rich Oxide Multilayer Structures
Author	*Karim Monfil Leyva (IIT-UACJ, Mexico), Mariano Aceves Mijares, Zhenrui Yu (INAOE, Mexico), Carlos Dominguez (IMB-CNM-CSIC, Spain), Roberto Ambrosio, Carlos Martinez (IIT-UACJ, Mexico)
Page	p. 268

[Chalcogenide Electronic & Optical Properties, Chalcogenide Photovoltaics]

P2-32, ID 1074

Title Electron Transport in Undoped a-Se Photoconductive Films of Different Thickness

Author Derek Mortensen, *Safa Kasap (Univ. of Saskatchewan, Canada)

Page p. 269

P2-33, ID 1079

Title	On the Density of States of Germanium Telluride
Author	*Christophe Longeaud (CNRS, France), Jennifer Luckas, Daniel Krebs, Martin Salinga, Matthias Wuttig (RWTH Aachen Univ., I. Physikalisches Institut, Germany)
Page	p. 270

P2-34, ID 1224

Title	Correlation between the Nonlinear Optical Constants and the Structural Relaxation Parameters in Chalcogenide Glasses
Author	*Shosuke Ikeda, Masaru Aniya (Kumamoto Univ., Japan)
Page	p. 271

P2-35, ID 1274

Title	Photoluminescence Properties of Mn²⁺-Doped CdS /ZnS Core/Shell Nanocrystals with Different Core Size and Shell Thickness
Author	*Atsushi Ishizumi, Takahiro Uda, Kotaro Haruta, Hisao Yanagi (NAIST, Japan)
Page	p. 272

P2-36, ID 1086

Title	Evaluation of CuInSe₂ Thin Films by Paste Coating Process and Co-Evaporation Process
Author	*Keiji Tsutsumi, Takashi Minemoto (Ritsumeikan Univ., Japan), Kiyoshi Yaginuma, Koichi Uzawa, Fujio Makuta (Sumitomo Metal Mining Co., Itd., Japan), Takashi Higuchi, Hideyuki Takakura (Ritsumeikan Univ., Japan)
Page	p. 273

P2-37, ID 1103

Title	Materials Design of High-Efficiency Chalcopyrite Photovoltaic Solar Cells
Author	*Yoshimasa Tani, Kazunori Sato, Hiroshi Katayama-Yoshida (Osaka Univ., Japan)
Page	p. 274

P2-38, ID 1175

Title	Selenization in Reactive Supercritical Fluid for CIS Film Preparation
Author	*Takaaki Tomai, Dinesh Rangappa, Itaru Honma (Tohoku Univ., Japan)
Page	p. 275

P2-39, ID 1278

Title	Enhancement of Photovoltaic Effects of TiO₂ based Solar Cells by the Cosensitization of CdS Quantum Dots and N719 Dye Using Different Nanostructured Carbons as Counter Electrodes
Author	*Gouri Sankar Paul, Min Woo Kim, Jung Ho Kim, Jae Jung Ko, Jong-Sung Yu (Korea Univ., Republic of Korea)
Page	p. 276

P2-40, ID 1295

Title	Dependences of Sulfurization Conditions of Electrodeposited Cu/In Bilayers on Structural and Solar Cell Properties of CuInS₂films
Author	*Sun Min Lee, Shigeru Ikeda, Tetsuro Yagi, Takashi Harada, Michio Matsumura (Osaka Univ., Japan)
Page	p. 277

P2-41, ID 1327

Title	Influence of Cu Off-Stoechiometry on Wide Band Gap CIGSe Solar Cells Electronic Properties
Author	Arouna Darga, Wilfried Favre, *Jean-Paul Kleider, Denis Mencaraglia (Laboratoire de Génie Electrique de Paris, France), Hakim Marko, Ludovic Arzel, Nicolas Barreau, John Kessler (Univ. de Nantes, France), Sébastien Noel (CEA, LITEN, Laboratoire des Composants pour la Récupération d’Energie, France)
Page	p. 278

P2-42, ID 1340

Title	Development of Copper Tin Sulfide Films by Co-Evaporation Technique for Photovoltaic Applications
Author	*Karim Monfil Leyva, Xavier Mathew (CIE-UNAM, Mexico), Jose Santos (UAQ, Mexico), Roberto Ambrosio, Abimael Jimenez, Carlos Martinez (IIT-UACJ, Mexico)
Page	p. 279

[Oxides Devices, Oxides TFT]

P2-43, ID 1143

Title Pedestal ARROWs for Mach-Zehnder Interferometric Sensors

Author *Daniel Orquiza Carvalho, Marco Isaías Alayo (Escola Politécnica da Universidade de São Paulo, Brazil)

Page p. 280

P2-44, ID 1210

Title	Preparation and Optical Properties of Tin Oxide Nanowires with Different Nano-Catalysts for Gas Sensors
Author	*Jen-Bin Shi, Chih-Jung Chen, Yu-Cheng Chen, Po-Feng Wu, Ya-Ting Lin (Feng Chia Univ., Taiwan)
Page	p. 281

P2-45, ID 1258

Title	Preparation and Characterization of High-k Tantalum Pentoxide (Ta₂O₅) Thin Film for Sensors and Integrated Circuits Applications
Author	Jair F. Souza, Milena A. Moreira, *Ioshiaki Doi, José A. Diniz, Peter J. Tatsch (Univ. of Campinas, Brazil)
Page	p. 282

P2-46, ID 1306

Title	Nanostructure Mixed PEDOT-PSS Counter Electrodes of Dye Sensitized Solar Cells
Author	*Wasan Maiaugree, Samuk Pimanpang, Saman Saekow (Khon Kaen Univ., Thailand), Wirat Jarernboon (King Mongkut's Inst. of Tech. Ladkrabang, Thailand), Vittaya Amornkitbamrung (Khon Kaen Univ., Thailand)
Page	p. 283

P2-47, ID 1105

Title	High Intensity UV Radiation Ozone Treatment on Nanocrystalline TiO₂ Layers for High Efficiency of Dye-Sensitized Solar Cells
Author	Samarn Saekow, Wasan Maiaugree (Khon Kaen Univ., Thailand), Wirat Jarernboon (King Mongkut's Inst. of Tech. Ladkrabang, Thailand), Samuk Pimanpang, *Vittaya Amornkitbamrung (Khon Kaen Univ., Thailand)
Page	p. 284

P2-48, ID 1019

Title	Rapid Thermal-Plasma Annealing of ZnO:Al Films for Silicon Thin-Film Solar Cells
Author	*Hideto Koshino, Shun-suke Sato, Zeugo Tang (Saitama Univ., Japan), Hirokazu Shimizu (Saitama Industrial Technology Center, Japan), Hajime Shirai (Saitama Univ., Japan)
Page	p. 285

P2-49, ID 1030

Title	Nanoporous SiO₂-TiO₂ Coatings with Antirefrective and Self-Cleaning Properties in a Cost-Effective Way
Author	*Lei Miao, Li Fen Su (Chinese Academy of Sciences, China), Sakae Tanemura (Japan Fine Ceramics Centre, Japan), Gang Xu (Chinese Academy of Sciences, China)
Page	p. 286

P2-50, ID 1066

Title	Sputter Deposited Selective Transmitting Layers for Solar Cell Applications
Author	*So Un Jeong, Seung-Yun Lee (Hanbat Natl. Univ., Republic of Korea), Jung Wook Lim (ETRI, Republic of Korea)
Page	p. 287

P2-51, ID 1168

Title	Nanocrystalline Ga-Sn-Zn-O Thin Films for Transparent Thin Film Transistors
Author	*Dong-Ho Kim, Hey-Ri Kim (Korea Institute of Materials Science (KIMS), Republic of Korea), Hee Sung Lee (Yonsei Univ., Republic of Korea), Gun-Hwan Lee (Korea Institute of Materials Science (KIMS), Republic of Korea), Pung-Geun Song (Pusan National Univ., Republic of Korea), Seongil Im (Yonsei Univ., Republic of Korea)
Page	p. 288

P2-52, ID 1219

Title	Stable Indium Gallium Zinc Oxide Thin Film Transistors under Bias Temperature Stress
Author	*Dae Hwan Kim, Hoon Yim, Byung Gook Choi, Sul Lee, Sung Ki Kim, JongUk Bae, Chang-Dong Kim, Myungchul Jun, YongKee Hwang, In jae Chung (LG Display, Republic of Korea)
Page	p. 289

[Organics]

P2-53, ID 1251

Title Carrier Dynamics in Bulk Heterojunction Solar Cells Studied by Modulation Spectroscopy

Author *Takashi Kobayashi, Yosuke Terada, Takashi Nagase, Hiroyoshi Naito (Osaka Prefecture Univ., Japan)

Page p. 290

P2-54, ID 1252

Title	Electronic Structure of Disordered and Ordered Polyfluorene Thin Films
Author	*Takashi Kobayashi, Toshiyuki Endo, Takashi Nagase (Osaka Prefecture Univ., Japan), Shuichi Murakami (Technology Research Institute of Osaka Prefecture, Japan), Hiroyoshi Naito (Osaka Prefecture Univ., Japan)
Page	p. 291

P2-55, ID 1271

Title	Solution-Processable Organic Field-Effect Transistors with High Mobility, Low Threshold Voltage and High Electrical Stability
Author	*Fumio Mochizuki, Toshiyuki Endo, Takashi Nagase, Takashi Kobayashi (Osaka Prefecture Univ., Japan), Kazuo Takimiya (Hiroshima Univ., Japan), Masaaki Ikeda (Nippon Kayaku Co., Ltd./Kyushu Univ., Japan), Hiroyoshi Naito (Osaka Prefecture Univ., Japan)
Page	p. 292

P2-56, ID 1283

Title	Photoelectric Features of Organic Material Layers Formed by Thermal Melting
Author	*Giedrius Juška (Vilnius Univ., Lithuania), Tadas Malinauskas, Vytautas Getautis (Kaunas Univ. of Tech., Lithuania), Kêstutis Arlauskas (Vilnius Univ., Lithuania)
Page	p. 293

P2-57, ID 1294

Title	Electrical Characteristics of Polymer Field-Effect Transistors with 30 nm Length Channels
Author	*Takashi Nagase, Takeshi Hirose, Takashi Kobayashi (Osaka Prefecture Univ., Japan), Rieko Ueda, Akira Otomo (NICT, Japan), Hiroyoshi Naito (Osaka Prefecture Univ., Japan)
Page	p. 294

P2-58, ID 1299

Title	Silicon Nanowire/P3HT Hybrids for Thin Film Solar Cells
Author	Joel Davenas, Emmanuel Beyou, Alice Balloffet (Lyon Univ., France), David Cornu (Montpellier Univ., European Membrane Institute, France), *Stephane Vignoli (Lyon Univ., France)
Page	p. 295

P2-59, ID 1311

Title	Study of Traps in P3HT:PCBM based Organic Solar Cells Using Fractional Thermally Stimulated Current Technique
Author	Peiqing Yu, Anne Migan, *José Alvarez, Arouna Darga, Denis Mencaraglia (Laboratoire de Génie Electrique de Paris, France), Yunfei Zhou, Michael Krueger (Freiburg Materials Research Center (FMF), Germany)
Page	p. 296

P2-60, ID 1335

Title	Bimolecular Recombination Process in Frequency-Domain Measurement
Author	Masataka Tokioka, *Takashi Kobayashi, Keita Kinoshita, Takashi Nagase, Hiroyoshi Naito (Osaka Prefecture Univ., Japan)
Page	p. 297

P2-61, ID 1337

Title	Impedance Spectroscopy Study of Charge Carrier Mobilities of Organic Semiconducting Materials in Organic Diode Devices
Author	*Shingo Ishihara, Takayuki Okachi, Hiroyoshi Naito (Osaka Prefecture Univ., Japan)
Page	p. 298

[Nanostructures & Nitrides]

P2-62, ID 1068

Title Enhanced Luminescence of ZnSe:Eu³⁺ Nanocrystals and ZnSe:Eu³⁺/ZnS Core-Shell Nanocrystals

Author Ni Liu, *Ling Xu, Jinrong Xiao, Fei Yang, Weining Su, Jun Xu, Zhongyuan Ma, Kunji Chen (Nanjing Univ., China)

Page p. 299

P2-63, ID 1129

Title	Raman Scattering of CdSe/ZnS Quantum Dots Bioconjugated with Osteopontin Antibody
Author	*Aaron I. Diaz Cano, I. Ch. Ballardo Rodriguez (SIP UPIITA Instituto Politécnico Nacional, Mexico), T. V. Torchynska (SIP ESFM Instituto Politécnico Nacional, Mexico)
Page	p. 300

P2-64, ID 1338

Title	Optical Properties of In_xGa_1-xN Microcrystalline Thin Films Deposited on SiO₂ Substrates by RF-Sputtering
Author	*Mitsuo Yamaga, Takashi Samura, Ryou Yokoyama, Yuta Ogoshi, Tatsuro Sahashi, Shun Hibino, Takashi Itoh, Shuichi Nonomura (Gifu Univ., Japan)
Page	p. 301

[Carbon-related Materials]

P2-65, ID 1045

Title PTC Elements based on High Density Polyethylene Loaded with Multi-Walled Carbon Nanotubes

Author *Heinz Christoph Neitzert, Olga Valentino, Maria Sarno, Rosella Maria Nobile, Paolo Ciambelli (Salerno Univ., Italy)

Page p. 302

P2-66, ID 1149

Title	A Study on the Diamond Thin Films Synthesized for the Rear Passivation of Si Solar Cell
Author	*Ah Ram Jeon, You Jin Kim (Hanbat National Univ., Republic of Korea), Mun Gi Park (LG Display Co., Ltd., Republic of Korea), Won Seok Choi (Hanbat National Univ., Republic of Korea)
Page	p. 303

P2-67, ID 1152

Title	A Study on the SiC Passivation Film Synthesized by a RF Magnetron Co-Sputtering System
Author	*Eun Sung Cho, Tae Hwan Jung, Jae Keun Seo, Sang Jun Lee (Hanbat National Univ., Republic of Korea), Hae Suk Lee (Shinsung Holdings Co., Republic of Korea), Won Seok Choi (Hanbat National Univ., Republic of Korea)
Page	p. 304

P2-68, ID 1214

Title	Electrical Properties of Carbon Nanowall Films
Author	*Takashi Itoh, Yosuke Nakanishi, Takanori Ito (Gifu Univ., Japan), Aliaksei Vetushka, Martin Ledinsky, Antonin Fejfar, Jan Kocka (Academy of Sciences of the Czech Republic, Czech Republic), Shuichi Nonomura (Gifu Univ., Japan)
Page	p. 305

P2-69, ID 1298

Title	Formation of Diamond Nanocrystals via Pulsed Laser Ablation of Graphite in Liquid
Author	Indrajeet Kumar, Arpita Nath, *Alika Khare (Indian Inst. of Tech. Guwahati, India)
Page	p. 306

P2-70, ID 1308

Title	Diamond-Like Carbon Film Growth with not too High Vacuum Radio Frequency Chemical Vapor Deposition
Author	Vittaya Amornkitbamrung, *Kridsanapan Srimongkon, Pikaned Uppachai, Narit Faibut, Samarn Saekow (Khon Kaen Univ., Thailand)
Page	p. 307

Friday, August 26, 2011

Session 5A1 Si Microstructure III
Time: 9:00 - 10:20 Friday, August 26, 2011
Location: Room 1
Chair: Arno H. M. Smets (Delft Univ., Netherlands)

5A1-1, ID 1345 (Time: 9:00 - 9:40)

Title	(Invited Paper) Using Coherent Spin Manipulation to Probe Spin Dependent Processes in Organic and Inorganic Amorphous Semiconductors
Author	*Dane R. McCamey (Univ. of Sydney, Australia)
Page	p. 308

5A1-2, ID 1139 (Time: 9:40 - 10:00)

Title	Nanoscale Conductance Study of Delicate Nanostructures by Torsional Resonance Tunneling Atomic Force Microscopy
Author	*Aliaksei Vetushka (Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i., Czech Republic), Takashi Itoh (Gifu Univ., Japan), Antonín Fejfar, Martin Ledinský, Bohuslav Rezek, Jan Kočka (Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i., Czech Republic)
Page	p. 309

Session 5B1 Nano-Si Preparation II
Time: 9:00 - 10:20 Friday, August 26, 2011
Location: Room 2
Chair: Hajime Shirai (Saitama Univ., Japan)

5B1-1, ID 1196 (Time: 9:00 - 9:20)

Title	Fabrication of Si Thin Films Using rf-PECVD with SiH₄ and F₂
Author	*Sinae Kim, Junichi Hanna (Tokyo Inst. of Tech., Japan)
Page	p. 310

5B1-2, ID 1223 (Time: 9:20 - 9:40)

Title	The Depression Effect of Hydrogen on the Mounded Surface Growth in Microcrystalline Silicon Film
Author	*Fengzhen Liu, Hailong Zhang, Meifang Zhu, Yuqin Zhou, Jinlong Liu (Chinese Academy of Sciences, China)
Page	p. 311

5B1-3, ID 1134 (Time: 9:40 - 10:00)

Title	Tailored Voltage Waveforms for the Deposition of Microcrystalline Silicon
Author	*Erik V Johnson, Pierre-Alexandre Delattre, Jean-Paul Booth (Ecole Polytechnique, France)
Page	p. 312

5B1-4, ID 1179 (Time: 10:00 - 10:20)

Title	On the Role of Atomic Hydrogen during Microcrystalline Silicon Thin-Film Deposition
Author	*Aafke Bronneberg, Adriana Creatore (Eindhoven Univ. of Tech., Netherlands), Marinus van de Sanden (FOM Institute for Plasma Physics Rijnhuizen, Netherlands)
Page	p. 313

Title	Light-Induced Increase in the Open Circuit Voltage and Fill Factor of Microcrystalline Silicon Solar Cells Deposited in a Single Chamber System
Author	*Xiaodan Zhang, G. H. Wang, S. Z. Xu, S. Z. Xiong, X. H. Geng, Y. Zhao (Nankai Univ., China)
Page	p. 99

Title	Numerical Model of Transport in Microcrystalline Silicon Films
Author	*Jimmy Armand, Frederic Martinez, Yvan Cuminal (Univ. Montpellier 2, France)
Page	p. 108

Title	Towards a Better Understanding of Resistance Drift and Threshold Switching Phenomena in Amorphous Phase Change Materials: Study of GeTe Versus Ge₁₅Te₈₅
Author	*Jennifer Luckas (RWTH Aachen Univ./ Laboratoire de Génie Electrique de Paris, Germany), Martin Salinga (RWTH Aachen Univ., Germany), Christophe Longeaud (Laboratoire de Génie Electrique de Paris, France), Matthias Wuttig (RWTH Aachen Univ., France)
Page	p. 136

Title	Sub-Gap Absorption Study of Amorphous InGaZnO₄ Films by Photothermal Deflection Spectroscopy
Author	*Tamihiro Gotoh, Kenji Kaneda, Syun Kasahara, Takumi Kakinuma (Gunma Univ., Japan)
Page	p. 149

Title	Highly Conductive 3.4-polyethylenedioxythiophene:polystyrenesulfonic Acid (PEDOT:PSS) Films as a Transparent Anode for Organic Thin-Film Solar Cells
Author	*Tomohisa Ino, Yoshiyuki Muramatsu, Takeshi Fukuda, Keiji Ueno, Hajime Shirai (Saitama Univ., Japan)
Page	p. 164

Title	Properties of Thin-Film Silicon Solar Cells at Very High Irradiance
Author	Steve Reynolds, Suman Anand (Univ. of Dundee, U.K.), Amjad Meftah (Univ. of Biskra, Algeria), *Vlad Smirnov (Forschungszentrum Jülich GmbH, Germany)
Page	p. 239

Title	Effect of Aluminum Induced Crystallization on the Growth of Nanocrystalline Silicon within Amorphous Silicon Carbon Alloy Thin Films
Author	Arindam Kole, *Partha Chaudhuri (Indian Association for the Cultivation of Science, India)
Page	p. 251

Title	Electron Transport in Undoped a-Se Photoconductive Films of Different Thickness
Author	Derek Mortensen, *Safa Kasap (Univ. of Saskatchewan, Canada)
Page	p. 269

Title	Pedestal ARROWs for Mach-Zehnder Interferometric Sensors
Author	*Daniel Orquiza Carvalho, Marco Isaías Alayo (Escola Politécnica da Universidade de São Paulo, Brazil)
Page	p. 280

Title	Carrier Dynamics in Bulk Heterojunction Solar Cells Studied by Modulation Spectroscopy
Author	*Takashi Kobayashi, Yosuke Terada, Takashi Nagase, Hiroyoshi Naito (Osaka Prefecture Univ., Japan)
Page	p. 290

Title	Enhanced Luminescence of ZnSe:Eu³⁺ Nanocrystals and ZnSe:Eu³⁺/ZnS Core-Shell Nanocrystals
Author	Ni Liu, *Ling Xu, Jinrong Xiao, Fei Yang, Weining Su, Jun Xu, Zhongyuan Ma, Kunji Chen (Nanjing Univ., China)
Page	p. 299

Title	PTC Elements based on High Density Polyethylene Loaded with Multi-Walled Carbon Nanotubes
Author	*Heinz Christoph Neitzert, Olga Valentino, Maria Sarno, Rosella Maria Nobile, Paolo Ciambelli (Salerno Univ., Italy)
Page	p. 302

24th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 24) Technical Program

Session Schedule

List of Papers

24th International Conference on
Amorphous and Nanocrystalline Semiconductors (ICANS 24)
Technical Program