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24th International Conference on
Amorphous and Nanocrystalline Semiconductors (ICANS 24)
Session P1 Poster I
Time: 18:00 - 19:40 Tuesday, August 23, 2011
Location: Reception Hall
Chair: Takashi Kobayashi (Osaka Prefecture Univ., Japan)
[Si Photovoltaics (Production, Device Physics, Device Fabrication, Heterojunction)]
P1-1, ID 1089
| Title | Light-Induced Increase in the Open Circuit Voltage and Fill Factor of Microcrystalline Silicon Solar Cells Deposited in a Single Chamber System |
| Author | *Xiaodan Zhang, G. H. Wang, S. Z. Xu, S. Z. Xiong, X. H. Geng, Y. Zhao (Nankai Univ., China) |
| Page | p. 99 |
P1-2, ID 1051
| Title | Midgap Defect Densities in Nanocrystalline Si Solar Cells |
| Author | Dan Congreve, Shantan Kajjam, Nayan Chakravarty, *Vikram Dalal (Iowa State Univ., U.S.A.) |
| Page | p. 100 |
P1-3, ID 1109
| Title | Crystalline Growth of Germanium Thin Films on Single Crystal Silicon Substrates Promoted by Solid Phase Crystallization |
| Author | *Atsushi Suzuki, Masao Isomura (Tokai Univ., Japan) |
| Page | p. 101 |
P1-4, ID 1202
| Title | Heat Treatment of Amorphous Silicon p-i-n Solar Cells with High-Pressure H2O Vapor |
| Author | *Masahiko Hasumi, Jun Takenezawa, Toshiyuki Sameshima (Tokyo Univ. of Agri. and Tech., Japan), Takashi Koida, Tetsuya Kaneko, Minoru Karasawa, Michio Kondo (AIST, Japan) |
| Page | p. 102 |
P1-5, ID 1233
| Title | Study of Hydrogenated Amorphous Silicon-Germanium Thin Films, Deposited at Low Temperature, by the DC Magnetron Sputtering Method for Photovoltaic Applications |
| Author | Lamia Laidoudi, Abdelkrim Fedala, *Abla Rahal (Univ. of Science and Tech. Houari Boumedienne, Algeria) |
| Page | p. 103 |
P1-6, ID 1280
| Title | Amorphous Silicon Films on Teflon Substrates by PECVD and HWCVD |
| Author | *Himanshu S. Jha (Indian Inst. of Tech. Guwahati, India), Barkha Awasthi, Dinesh Deva (Indian Inst. of Tech. Kanpur, India), Pratima Agarwal (Indian Inst. of Tech. Guwahati, India) |
| Page | p. 104 |
P1-7, ID 1290
| Title | Role of Hydrogen in the Ordering of the a-Si:H Films during and after the Film Growth. Enhancement of the Passivation Properties for Solar Cell Application |
| Author | *Adel B. Gougam, Arul Kumar, Twan Bearda, Ivan Gordon, Jef Poortmans (imec, Belgium) |
| Page | p. 105 |
P1-8, ID 1111
| Title | Low Concentrator Hetero-Junction Microcrystalline Silicon Solar Cells |
| Author | *Shunsuke Kasashima, Taweewat Krajangsang, Aswin Hongsingthong, Hideaki Fujioka, Porponth Sichanugrist, Makoto Konagai (Tokyo Inst. of Tech., Japan) |
| Page | p. 106 |
P1-9, ID 1153
| Title | Improvement of Silicon Tin(SiSn) Thin Films Solar Cells |
| Author | *Takehiko Nagai, Zhengxin Liu, Ivan Turkevych, Michio Kondo (AIST, Japan) |
| Page | p. 107 |
[Si Electronic & Optical Properties, Si Transport Properties, Si Metastability, Si Devices, Poly-Si Preparation]
P1-10, ID 1318
| Title | Numerical Model of Transport in Microcrystalline Silicon Films |
| Author | *Jimmy Armand, Frederic Martinez, Yvan Cuminal (Univ. Montpellier 2, France) |
| Page | p. 108 |
P1-11, ID 1010
| Title | Effect of Hydrogen on Boron Doped Amorphous Silicon Prepared by DC Magnetron Sputtering |
| Author | Hadj Yahia Seba, Rabah Cherfi, *Farida Hamadache, Moussa Aoucher (Univ. of Science and Tech. Houari Boumedienne, Algeria) |
| Page | p. 109 |
P1-12, ID 1047
| Title | Hopping-Gap and Luminescence in Hydrogenated Amorphous Silicon |
| Author | *Kunitaka Monji, Ryo Sagawa, Kouhei Tsushima (Nihon Univ., Japan), Hidenori Deki (Hiroshima Kokusai Gakuin Univ., Japan), Kazuro Murayama (Nihon Univ., Japan) |
| Page | p. 110 |
P1-13, ID 1050
| Title | Influence of Chemical Annealing on Bandgap and Electronic Properties of Amorphous Si and Amorphous (Si,Ge) |
| Author | Ashutosh Shyam, Dan Congreve, *Vikram Dalal (Iowa State Univ., U.S.A.) |
| Page | p. 111 |
P1-14, ID 1059
| Title | Comparison between the Oscillating Photocarrier Grating and the Moving Grating Techniques |
| Author | Federico Ventosinos (INTEC, Argentina), *Christophe Longeaud (LGEP, France), Javier Schmidt (INTEC, Argentina) |
| Page | p. 112 |
P1-15, ID 1093
| Title | Temporal Electric Conductivity Variations of Hydrogenated Amorphous Silicon Due to High Energy Protons |
| Author | *Shin-ichiro Sato (Japan Atomic Energy Agency, Japan), Hitoshi Sai (AIST, Japan), Takeshi Ohshima (Japan Atomic Energy Agency, Japan), Mitsuru Imaizumi, Kazunori Shimazaki (Japan Aerospace Exploration Agency, Japan), Michio Kondo (AIST, Japan) |
| Page | p. 113 |
P1-16, ID 1148
| Title | Sub-Gap Photoconductivity in Ge0.96Si0.04:H Films Deposited by Low Frequency Plasma at Low Temperatures |
| Author | *Francisco Avila, Andrey Kosarev, Ismael Cosme (National Institute for Astrophysics, Optics and Electronics, Mexico) |
| Page | p. 114 |
P1-17, ID 1316
| Title | Anomalous Hall effect in µc-Si:H |
| Author | Christian Sellmer, Torsten Bronger, *Wolfhard Beyer, Reinhard Carius (Forschungszentrum Jülich GmbH, Germany) |
| Page | p. 115 |
P1-18, ID 1036
| Title | Infrared Semiconductor Laser Irradiation Used for Crystallization of Silicon Thin Films |
| Author | *Toshiyuki Sameshima, Masahiko Hasumi (Tokyo Univ. of Agri. and Tech., Japan) |
| Page | p. 116 |
P1-19, ID 1043
| Title | Raman Scattering from the High-Pressure Phases of Si Induced by Indentation |
| Author | *Brett C. Johnson (Japan Atomic Energy Agency, Japan), Bianca Haberl, Jodie E. Bradby (Australian National Univ., Australia), Jeffrey C. McCallum (Univ. of Melbourne, Australia), Jim S. Williams (Australian National Univ., Australia) |
| Page | p. 117 |
P1-20, ID 1255
| Title | Light-Induced Annealing of Hole Trap States: A New Aspect of Light-Induced Changes in Hydrogenated Amorphous Silicon |
| Author | *Isao Sakata, Toshihiro Kamei, Mitsuyuki Yamanaka (National Institute of Advanced Industrial Science and Technology (AIST), Japan) |
| Page | p. 118 |
P1-21, ID 1289
| Title | Amorphous-Nanocrystalline Silicon Transition from Argon Diluted Silane Deposition |
| Author | *Rachid Amrani, Yvan Cuminal, Frederic Pichot, Alain Foucaran (Univ. de Montpellier II, France), Larbi Chahed (Univ. d'Oran, Algeria) |
| Page | p. 119 |
P1-22, ID 1305
| Title | Crystallization of Amorphous Silicon Films on Porous Silicon by Micro-Thermal-Plasma-Jet Irradiation |
| Author | *Ryohei Matsubara, Shohei Hayashi, Seiichiro Higashi (Hiroshima Univ., Japan) |
| Page | p. 120 |
P1-23, ID 1317
| Title | Intermediate Phase Silicon Structure Induced Intensive Electroluminescence from Thermal Annealed SiO Film |
| Author | *Zhongyuan Ma, Xiaofan Jiang, Guoyin Xia, Ling Xu, Wei Li, Jun Xu, Kunji Chen, Xinfan Huang, Duan Feng (Nanjing Univ., China) |
| Page | p. 121 |
P1-24, ID 1334
| Title | Adsorbate-Related Metastability of the Dark and Photoelectronic Minority and Majority Properties in Hydrogenated Microcrystalline Silicon Thin Films |
| Author | Meliha Bayrak (Institut für Physik, Carl von Ossietzky Universität Oldenburg, Germany), *Mehmet Günes (Mugla Univ., Turkey), Vladimir Smirnov, Friedhelm Finger (Forschungszentrum Jülich GmbH, Germany), Rudolf Brüggemann (Institut für Physik, Carl von Ossietzky Universität Oldenburg, Germany) |
| Page | p. 122 |
P1-25, ID 1054
| Title | Thin Film Membrane based on a-SiGe:B and MEMS Technology for Application in Cochlear Implants |
| Author | *Aurelio Heredia, Manuel Gonzalez (UPAEP, Mexico), Roberto Ambrosio (UACJ, Mexico), Mario Moreno (INAOE, Mexico), Laura Castro Y Fernandez (UPAEP, Mexico), Abimael Jimenez (UACJ, Mexico) |
| Page | p. 123 |
P1-26, ID 1055
| Title | Fabrication of an Integrated Optical Interferometric Device for Biological Applications based on SiN Waveguides Deposited by PECVD |
| Author | *Aurelio Heredia (UPAEP, Mexico), Roberto Ambrosio (UACJ, Mexico), Laura Castro Y Fernandez (UPAEP, Mexico), Carlos Zuńiga, Mario Moreno (INAOE, Mexico), Abimael Jimenez (UACJ, Mexico) |
| Page | p. 124 |
P1-27, ID 1146
| Title | Nanocrystalline Si based Photoconductive Device for THz Generation |
| Author | *Nart S. Daghestani, Saydulla Persheyev, Maria Ana Cataluna (Univ. of Dundee, U.K.), Gary Ross (NCR FSG Ltd, U.K.), Mervyn J. Rose (Univ. of Dundee, U.K.) |
| Page | p. 125 |
P1-28, ID 1150
| Title | Study of Polymorphous Silicon and Germanium as Thermo-Sensing Films for Infrared Detectors |
| Author | Mario Moreno, *Alfonso Torres (Instituto Nacional de Astrofísica, Óptica y Electrónica, Mexico), Roberto Ambrosio (Universidad Autónoma de Ciudad Juárez, Mexico), Alfonso Torres-Rios, Pedro Rosales, Carlos Zuniga (Instituto Nacional de Astrofísica, Óptica y Electrónica, Mexico), Aurelio Heredia (Universidad Popular Autónoma de Puebla, Mexico) |
| Page | p. 126 |
P1-29, ID 1166
| Title | Synthesis of nc-Si/SiN Core-Shell Hemisphere System with Controllable Size for Floating Gate Memory |
| Author | Xiaofan Jiang, *Zhongyuan Ma, Guanyuan Liu, Xinye Qian, Zhonghui Fang, Xiangao Zhan, Kunji Chen, Xinfan Huang, Jun Xu, Ling Xu (Nanjing Univ., China) |
| Page | p. 127 |
P1-30, ID 1234
| Title | Ambipolar a-SiGe:H Thin-Film Transistors Fabricated at 200°C |
| Author | Miguel Dominguez, Pedro Rosales, *Alfonso Torres, Mario Moreno, Joel Molina, Francisco De la Hidalga, Carlos Zuńiga, Wilfrido Calleja (National Institute for Astrophysics, Optics and Electronics (INAOE), Mexico) |
| Page | p. 128 |
P1-31, ID 1253
| Title | Improvement of Electrical Characteristics of a-SiGe:H Thin-Film Transistors |
| Author | Miguel Dominguez, Pedro Rosales, *Alfonso Torres, Mario Moreno, Joel Molina, Francisco De la Hidalga, Carlos Zuńiga, Wilfrido Calleja (National Institute for Astrophysics, Optics and Electronics (INAOE), Mexico) |
| Page | p. 129 |
P1-32, ID 1001
| Title | The Thermal Stability of Poly-Si Crystallized by Al Induced with H-Plasma |
| Author | Chong Luo, Juan Li, He Li, Zhiguo Meng (Nankai Univ., China), Hoi Sing Kwok (Hong Kong Univ. of Science and Tech., China), *Shaozhen Xiong (Nankai Univ., China) |
| Page | p. 130 |
P1-33, ID 1002
| Title | The Roles of Hydrogen Plasma Radicals on Passivation of Poly-Si |
| Author | Chong Luo, Juan Li, He Li, Zhiguo Meng (Nankai Univ., China), Hoi Sing Kwok (Hong Kong Univ. of Science and Tech., China), *Shaozhen Xiong (Nankai Univ., China) |
| Page | p. 131 |
P1-34, ID 1069
| Title | Peculiarities of Photoelectrical and Optical Properties of Protocrystalline Hydrogenated Silicon Films |
| Author | *Andrey Kazanskii (M.V. Lomonosov Moscow State Univ., Russian Federation), Xiangbo Zeng, Wenbo Peng (Institute of Semiconductors, CAS, China) |
| Page | p. 132 |
P1-35, ID 1108
| Title | High-Pressure H2O Vapor Treatment for Poly-Crystalline Germanium Thin Films |
| Author | *Takeru Sagisaka, Takahiro Takatsu, Masao Isomura (Tokai Univ., Japan) |
| Page | p. 133 |
P1-36, ID 1110
| Title | Poly-Silicon-Germanium Thin Films Prepared by Aluminum-Induced Crystallization |
| Author | *Masahiro Yajima (Tokai Univ., Japan), Isao Nakamura (Tokyo Metropolitan Industrial Technology Research Institute, Japan), Masao Isomura (Tokai Univ., Japan) |
| Page | p. 134 |
P1-37, ID 1301
| Title | Structural and Electrical Properties of High Temperature Polycrystalline Silicon Films on Molybdenum Substrate |
| Author | *Hyunil Kang (Hanbat National Univ., Republic of Korea), Doyoung Kim (Ulsan College, Republic of Korea) |
| Page | p. 135 |
[Chalcogenide Phase Change, Chalcogenide Metastability, Chalcogenide Structure]
P1-38, ID 1005
| Title | Towards a Better Understanding of Resistance Drift and Threshold Switching Phenomena in Amorphous Phase Change Materials: Study of GeTe Versus Ge15Te85 |
| Author | *Jennifer Luckas (RWTH Aachen Univ./ Laboratoire de Génie Electrique de Paris, Germany), Martin Salinga (RWTH Aachen Univ., Germany), Christophe Longeaud (Laboratoire de Génie Electrique de Paris, France), Matthias Wuttig (RWTH Aachen Univ., France) |
| Page | p. 136 |
P1-39, ID 1042
| Title | Chalcogenide Programmable Switches with SiGeSb Heating Layers |
| Author | *Seung-Yun Lee, S. Jung (Hanbat Natl. Univ., Republic of Korea), S. Yoon, Y. Park (ETRI, Republic of Korea) |
| Page | p. 137 |
P1-40, ID 1088
| Title | Investigation on Sb-Rich Sb-Te-Se Phase-Change Material for Phase Change Memory Application |
| Author | *Liangcai Wu, Min Zhu, Cheng Peng, Zhitang Song, Xilin Zhou, Henan Ni, Feng Rao, Bo Liu, Songlin Feng (Chinese Academy of Sciences, China) |
| Page | p. 138 |
P1-41, ID 1113
| Title | Impact of DoS Changes on Resistance Drift and Threshold Switching in Amorphous Phase Change Materials |
| Author | *Daniel Krebs (IBM, Switzerland), Rüdiger Matti Schmidt (RWTH Aachen Univ., Germany), Josef Klomfaß (Forschungszentrum Jülich GmbH, Germany), Jennifer Luckas, Gunnar Bruns, Carl Schlockermann, Martin Salinga (RWTH Aachen Univ., Germany), Reinhard Carius (Forschungszentrum Jülich GmbH, Germany), Matthias Wuttig (RWTH Aachen Univ., Germany) |
| Page | p. 139 |
P1-42, ID 1163
| Title | Advantages of GeTeN Material for Phase Change Memory Application |
| Author | Cheng Peng, *Liangcai Wu, Zhitang Song, Feng Rao, Min Zhu, Xilin Zhou, Sannian Song, Songlin Feng (Chinese Academy of Sciences, China) |
| Page | p. 140 |
P1-44, ID 1288
| Title | Compositional Dependence of the Local Structure in GeTe based Alloys: Step for Development of Superior Phase-Change Materials |
| Author | *Milos Krbal, Alexander V. Kolobov, Paul Fons, Robert E. Simpson (National Institute of Advanced Industrial Science & Technology (AIST), Japan), Toshiyuki Matsunaga, Noboru Yamada (Panasonic Corp., Japan), Junji Tominaga (National Institute of Advanced Industrial Science & Technology (AIST), Japan), Tomoya Uruga (SPring8, Japan Synchrotron Radiation Institute(JASRI), Japan) |
| Page | p. 142 |
P1-45, ID 1123
| Title | Photo-Induced Structural Transformations in Chalcogenide Vitreous Semiconductors |
| Author | *Ugis Gertners, Jelena Aleksejeva, Janis Teteris (Univ. of Latvia, Latvia) |
| Page | p. 143 |
P1-47, ID 1167
| Title | Materials Design of Magnetic Semiconductors based on Filled Tetrahedral Compounds |
| Author | Sachito Fujimoto, *Kazunori Sato, Hiroshi Katayama-Yoshida (Osaka Univ., Japan) |
| Page | p. 144 |
P1-48, ID 1259
| Title | Structure Modification of Arsenic Containing ChVS Amorphous Films Electronic Properties |
| Author | Oleg Prikhodko, Alexander Ryaguzov, Suyumbika Maksimova, *Nurlan Almasov (Al-Farabi Kazak State National Univ., Kazakhstan) |
| Page | p. 145 |
P1-49, ID 1264
| Title | Studying the Role of Medium Range Structure on the Dispersion of Refractive Index in Chalcogenide Glasses |
| Author | *Masaru Aniya, Shosuke Ikeda (Kumamoto Univ., Japan) |
| Page | p. 146 |
P1-51, ID 1330
| Title | The Structural Features and Physicochemical Essence of Glass Transition Process in the Vitreous Individual Chemical Substances |
| Author | *Victor Minaev, Sergey Timoshenkov, Victor Kalugin (Moscow Institute of Electronics Engineering (Technical Univ.), Russian Federation) |
| Page | p. 148 |
[Oxide Electronic & Optical Properties]
P1-52, ID 1171
| Title | Sub-Gap Absorption Study of Amorphous InGaZnO4 Films by Photothermal Deflection Spectroscopy |
| Author | *Tamihiro Gotoh, Kenji Kaneda, Syun Kasahara, Takumi Kakinuma (Gunma Univ., Japan) |
| Page | p. 149 |
P1-53, ID 1221
| Title | Chemical bath Deposition of Undoped and Ni Doped ZnO Nanowire |
| Author | *Shih Hang Chiu, J.C.A. Huang (National Cheng Kung Univ., Taiwan) |
| Page | p. 150 |
P1-54, ID 1243
| Title | Effect of Plasma Pressure on to TiO2 Nanoparticles Synthesized via Laser Ablation at Titanium-Water Interface |
| Author | *Arpita Nath, Alika Khare (Indian Inst. of Tech. Guwahati, India) |
| Page | p. 151 |
P1-55, ID 1273
| Title | Growth and Properties of Zinc Oxide Films Prepared in Atmospheric-Pressure Radio Frequency Plasma |
| Author | *Shuta Mine (Osaka Univ., Japan), Shinya Okazaki (SHARP Corp., Japan), Takahiro Yamada, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake (Osaka Univ., Japan) |
| Page | p. 152 |
P1-56, ID 1296
| Title | Effect of Background Oxygen Pressure and Substrate Temperature onto the Quality MoO3 Thin Films via PLD |
| Author | Abu TT Mostako, Partha Dey, Himanshu S Jha, Mukesh Singh, Pratima Agarwal, *Alika Khare (Indian Inst. of Tech. Guwahati, India) |
| Page | p. 153 |
P1-57, ID 1343
| Title | Electron Spin Resonance of Transparent Conductive Oxide β-Ga2O3 |
| Author | *Hiromi Tsuzuki, Sayumi Takano, Mitsuo Yamaga (Gifu Univ., Japan), Encarnacion G. Villora, Kiyoshi Shimamura (NIMS, Japan) |
| Page | p. 154 |
P1-58, ID 1184
| Title | Chemical Bonding and Valence Band States of SiO2 Thin Film Prepared by Oxygen Plasma Followed by High-Pressure H2O Vapor Heat Treatment |
| Author | *Atsushi Kohno, Takayuki Tajiri (Fukuoka Univ., Japan), Shinya Yoshidomi, Masahiko Hasumi, Toshiyuki Sameshima (Tokyo Univ. of Agri. and Tech., Japan) |
| Page | p. 155 |
P1-59, ID 1249
| Title | Deposition Characteristics of Silicon Oxides in Open Air Using Atmospheric-Pressure Plasma Jet |
| Author | *Kousuke Higashida, Kei Nakamura (Osaka Univ., Japan), Tetsuji Shibata (Panasonic Electric Works Co.,Ltd, Japan), Takahiro Yamada, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake (Osaka Univ., Japan) |
| Page | p. 156 |
P1-60, ID 1020
| Title | Chemical Activity of Oxygen Atoms in the Magnetron Sputter-Deposited ZnO Film Growth |
| Author | *Fumiya Watanabe, Aya Morita, Shun-suke Sato, Hajime Shirai (Saitama Univ., Japan) |
| Page | p. 157 |
P1-61, ID 1022
| Title | Synthesis of Hexagonal ZnO Nanosheets by Using Atomic Oxygen Plasma |
| Author | *Jong-Hwan Yoon (Kangwon National Univ., Republic of Korea) |
| Page | p. 158 |
P1-62, ID 1028
| Title | Synthesis and Characterization of ZnO Nanorods Thin Film on Zinc Foil Substrate by Hydrothermal Oxidation Method |
| Author | *Nuengruethai Ekthammathat, Titipun Thongtem (Chiang Mai Univ., Thailand), Anukorn Phuruangrat (Prince of Songkla Univ., Thailand), Somchai Thongtem (Chiang Mai Univ., Thailand) |
| Page | p. 159 |
P1-63, ID 1082
| Title | Pulsed Laser Deposited In16Ga2ZnO28 Thin Film on Quartz Glass |
| Author | Jiangbo Chen, Li Wang, Xueqiong Su, Xiaojing Wan, Le Kong (Beijing Univ. of Tech., China), *Rongping Wang (Australian National Univ., Australia) |
| Page | p. 160 |
P1-64, ID 1090
| Title | Triangle Type ZnO Transparent Conductive Oxide Deposited by Low Cost Ultra Spray Pyrolysis: Wide Spectrum High Transparence |
| Author | *Xiaodan Zhang, Baochen Jiao, Changchun Wei, Ying Zhao (Nankai Univ., China) |
| Page | p. 161 |
P1-65, ID 1091
| Title | Deposition and Characterization of Sb and Cu Doped Nanocrystalline SnO2 Thin Films Fabricated by the Photochemical Method |
| Author | *Dengbaoleer Ao, Masaya Ichimura (Nagoya Inst. of Tech. Univ., Japan) |
| Page | p. 162 |
P1-66, ID 1158
| Title | Effects of Gallium Doping on Electrical Properties of Amorphous Zn-Sn-O Thin Films |
| Author | *Hye-Ri Kim (Korea Institute of Materials Science (KIMS), Republic of Korea), Hee Sung Lee (Yonsei Univ., Republic of Korea), Dong-Ho Kim (Korea Institute of Materials Science (KIMS), Republic of Korea) |
| Page | p. 163 |
[Organics]
P1-67, ID 1017
| Title | Highly Conductive 3.4-polyethylenedioxythiophene:polystyrenesulfonic Acid (PEDOT:PSS) Films as a Transparent Anode for Organic Thin-Film Solar Cells |
| Author | *Tomohisa Ino, Yoshiyuki Muramatsu, Takeshi Fukuda, Keiji Ueno, Hajime Shirai (Saitama Univ., Japan) |
| Page | p. 164 |
P1-68, ID 1018
| Title | Real Time Ellipsometric Characterization of the Initial Growth Stage of 3,4-polyethylenedioxythiophene:polystyrenesulfonic Acid (PEDOT:PSS) Films by Electrospray Deposition for Organic Solar Cells |
| Author | *Tomohisa Ino, Takashi Asano, Takeshi Fukuda, Keiji Ueno, Hajime Shirai (Saitama Univ., Japan) |
| Page | p. 165 |
P1-69, ID 1071
| Title | Organic Light-Emitting Diodes Based on Layered Films of Thiophene/Phenylene Co-Oligomers |
| Author | *Tomoaki Sengoku, Takeshi Yamao, Shu Hotta (Kyoto Inst. of Tech., Japan) |
| Page | p. 166 |
P1-70, ID 1183
| Title | Study of Correlation between the Characteristics of Electronic Structure and Transport Properties of Organic Polymer based Semiconductor |
| Author | *Karina Aleman, Svetlana Mansurova, Andrey Kosarev (National Institute for Astrophysics, Optics and Electronics, Mexico), Klaus Meerholz, Sebastian Koeber (Univ. of Cologne, Germany) |
| Page | p. 167 |
P1-71, ID 1185
| Title | Electrical Characteristics of a New Polymer Structures Based on the Cu(II) Complex |
| Author | *Vachagan Avanesyan, Ekaterina Vodkailo (Herzen Russian State Pedagogical Univ., Russian Federation) |
| Page | p. 168 |
P1-72, ID 1192
| Title | Polarization and Surface Relief Gratings in Disperse Red 1 Doped Polyurethane Thin Films |
| Author | *Jelena Aleksejeva, Andrejs Gerbreders, Mara Reinfelde, Ugis Gertners, Janis Teteris (Univ. of Latvia, Latvia) |
| Page | p. 169 |
P1-73, ID 1229
| Title | Determining Factor of Carrier Mobility in Pentacene Thin-Film Transistors: Influence of Substrate Surface and Growth Rate |
| Author | *Ryosuke Matsubara, Toshio Nomura, Masatoshi Sakai, Kazuhiro Kudo, Masakazu Nakamura (Chiba Univ., Japan) |
| Page | p. 170 |