| Title | A Calibration Method for Accurate Prediction of Amorphous to Nanocrystalline Transition from Line Intensities of Optical Emission Spectrum |
| Author | *J. K. Rath, A. D. Verkerk, R. E. I. Schropp (Utrecht Univ., Netherlands), B. Boussadkat, W. J. Goedheer (FOM Institute for Plasma Physics Rijnhuizen, Netherlands) |
| Page | p. 234 |
| Title | Theoretical Calculations and Experimental Evidence of Photoluminescence Enhancement in Ultrathin Layer with Silicon Nanocrystals |
| Author | *Denis Zhigunov (M.V. Lomonosov Moscow State Univ., Russian Federation), Sergey Dyakov (M.V. Lomonosov Moscow State Univ.; Trinity College Dublin, Russian Federation), Andrey Emelyanov, Natalia Shvydun (M.V. Lomonosov Moscow State Univ., Russian Federation), Andreas Hartel, Daniel Hiller, Margit Zacharias (Albert-Ludwigs-Univ. Freiburg, Germany) |
| Page | p. 235 |
| Title | Metastability Effects in Hydrogenated Microcrystalline Silicon Thin Films Investigated by the Dual Beam Photoconductivity Method |
| Author | *Mehmet Günes, Gökhan Yilmaz, Hamza Cansever, Elif Turan (Mugla Univ., Turkey), Vladimir Smirnov, Friedhelm Finger, Josef Klomfass (Forschungszentrum Jülich GmbH, Germany), Rudolf Brüggemann (Institut für Physik, Carl von Ossietzky Universität Oldenburg, Germany) |
| Page | p. 236 |
| Title | Electrical Property of Nano-Crystalline Silicon Thin-Films Prepared by Very High Frequency Plasma Deposition System |
| Author | *Yoshifumi Nakamine, Tetsuo Kodera, Ken Uchida, Mutsuko Hatano, Shunri Oda (Tokyo Inst. of Tech., Japan) |
| Page | p. 237 |
| Title | Spectroscopic Detection of Medium Range Order in Device-Grade a-Si:H: Dangling Bond Defects, and the Staebler-Wronski Effect |
| Author | *Gerald Lucovsky, G. N. Parsons, D. Zeller, K. Wu, B. Papas, J. Whitten (North Carolina State Univ., U.S.A.), R. Lujan, R. A. Street (Palo Alto Reseach Center, a Xerox Company, U.S.A.) |
| Page | p. 238 |