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24th International Conference on
Amorphous and Nanocrystalline Semiconductors (ICANS 24)

Session 4B3  Poly-Si Preparation II
Time: 13:20 - 15:00 Thursday, August 25, 2011
Location: Room 2
Chair: H. Matsumura (JAIST, Japan)

4B3-1, ID 1033 (Time: 13:20 - 13:40)
TitleDopant Enhanced Solid Phase Epitaxy in Silicon and Germanium
Author*Brett C. Johnson (Japan Atomic Energy Agency, Japan), Jeffrey C. McCallum (Univ. of Melbourne, Australia)
Pagep. 214

4B3-2, ID 1061 (Time: 13:40 - 14:00)
Titlepn-Diodes Prepared by Aluminum-Induced Layer Exchange
Author*Michael Algasinger, Christian Jäger, Tobias Antesberger, Martin Stutzmann (Technische Univ. München, Germany)
Pagep. 215

4B3-3, ID 1277 (Time: 14:00 - 14:20)
TitleLayered Structure in As-Deposited SiGe Thin Films by rf-PECVD with SiH4 and GeF4 and Their Enhanced Solid-State Crystallization at Low-Temperatures
Author*Joo-won Yoon, Yoshito Kamiura, Wei Zhang, Sinae Kim, Jun-ichi Hanna (Tokyo Inst. of Tech., Japan)
Pagep. 216

4B3-4, ID 1062 (Time: 14:20 - 14:40)
TitlePhosphorus- and Boron- Doped Thin Polycrystalline Si Layers on Glass Prepared by Metal-Induced Layer Exchange
Author*Tobias Antesberger, Michael Algasinger, Mehdi Kashani, Christian Jäger, Thomas Wassner, Martin Stutzmann (Technische Univ. München, Germany)
Pagep. 217