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24th International Conference on
Amorphous and Nanocrystalline Semiconductors (ICANS 24)

Session 4B2  Poly-Si Preparation I
Time: 10:40 - 12:00 Thursday, August 25, 2011
Location: Room 2
Chair: N. H. Nickel (Helmholtz-Zentrum, Germany)

4B2-1, ID 1216 (Time: 10:40 - 11:00)
TitleOptimization of Heat Transition Layer in Infrared Laser Crystallization for High Performance Si Thin Film Transistors
Author*Sul Lee, Jun Hyeon Bae, Byung Gook Choi, Ki-tae Kim, Sung Ki Kim, Kwon-shik Park, JongUk Bae, Chang-Dong Kim, Myungchul Jun, YongKee Hwang, In-Jae Chung (LG Display, Republic of Korea)
Pagep. 210

4B2-2, ID 1191 (Time: 11:00 - 11:20)
TitleMechanism and Control of Crack Generation in Glass Substrates during Crystallization of a-Si Films by Flash Lamp Annealing
Author*Keisuke Ohdaira, Naohito Tomura, Shohei Ishii, Keisuke Sawada, Hideki Matsumura (JAIST, Japan)
Pagep. 211

4B2-3, ID 1084 (Time: 11:20 - 11:40)
TitleReduction in the Defect Density of Flash-Lamp-Crystallized Polycrystalline Silicon Films by Conventional Furnace Annealing
Author*Keisuke Sawada, Shohei Ishii, Naohito Tomura (JAIST, Japan), Keisuke Ohdaira (PRESTO, Japan Science and Technology Agency (JST), Japan), Hideki Matsumura (JAIST, Japan)
Pagep. 212

4B2-4, ID 1238 (Time: 11:40 - 12:00)
TitlePreferential Grain Orientation in Laser-Crystallized Polycrystalline Silicon Thin Films
Author*Moshe Weizman, Carola Klimm, Norbert Nickel, Bernd Rech (Helmholtz-Zentrum Berlin für Materialien und Energie, Germany)
Pagep. 213