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24th International Conference on
Amorphous and Nanocrystalline Semiconductors (ICANS 24)

Session 4B1  Si Devices
Time: 9:00 - 10:20 Thursday, August 25, 2011
Location: Room 2
Chair: Keisuke Ohdaira (JAIST, Japan)

4B1-1, ID 1272 (Time: 9:00 - 9:20)
TitleFabrication of Single-Layered Porous Silicon for Rapid Biosensing with Functionalized Superparamagnetic Nanobeads
Author*Pil Ju Ko, Ryousuke Ishikawa, Yoshitaka Morimoto, Tsukasa Takamura, Adarsh Sandhu (Tokyo Inst. of Tech., Japan)
Pagep. 206

4B1-2, ID 1052 (Time: 9:20 - 9:40)
TitleLight Amplification and Optical Gain from O-Si-N Bonding States in a-SiNxOy Waveguide
Author*Kunji Chen, Hengping Dong, Rui Huang, Wei Li, Zhongyuan Ma, Jun Xu, Xinfan Huang (Nanjing Univ., China), Gong-Ru Lin, Chung-Lun Wu (National Taiwan Univ., Taiwan)
Pagep. 207

4B1-3, ID 1235 (Time: 9:40 - 10:00)
TitleOptoelectronic characterisation of demultiplexer devices based on a-SiC:H
AuthorP. Louro, M. A. Vieira (ISEL, Portugal), *M. Vieira (CTS-UNINOVA, Portugal), T. Silva, M. Fernandes, M. Barata (ISEL, Portugal)
Pagep. 208

4B1-4, ID 1097 (Time: 10:00 - 10:20)
TitleThe Effect of Bias Stress on 1/f Noise in a-Si:H FETs
Author*Robert E. Johanson, Kang-Hyun Kim (Univ. of Saskatchewan, Canada), Arokia Nathan (Univ. College London, U.K.), Safa Kasap (Univ. of Saskatchewan, Canada)
Pagep. 209