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24th International Conference on
Amorphous and Nanocrystalline Semiconductors (ICANS 24)

Session 4A2  Si Metastability
Time: 10:40 - 12:00 Thursday, August 25, 2011
Location: Room 1
Chair: M. Stutzmann (Tech. Univ. of Munich, Germany)

4A2-1, ID 1328 (Time: 10:40 - 11:00)
TitleReduction of Staebler-Wronski Effect in a-Si:H by Post-Deposition Thermal Treatments that Change Network Nanostructure
Author*Paul Stradins, David C. Bobela (National Renewable Energy Laboratory, U.S.A.), Baojie Yan (United Solar Ovonic LLC, U.S.A.), Howard M. Branz (National Renewable Energy Laboratory, U.S.A.)
Pagep. 193

4A2-2, ID 1226 (Time: 11:00 - 11:20)
TitleThe Dangling-Bond Defect in Amorphous Silicon: Statistical Random Versus Kinetically Driven Defect Geometries
Author*Christoph Freysoldt, Gernot Pfanner, Joerg Neugebauer (Max-Planck-Institut fuer Eisenforschung, Germany)
Pagep. 194

4A2-3, ID 1236 (Time: 11:20 - 11:40)
TitleNative and Light-Induced Defects in Hydrogenated Amorphous Silicon Investigated by Electron-Paramagnetic Resonance
Author*Matthias Fehr, Alexander Schnegg, Bernd Rech (Helmholtz-Zentrum Berlin für Materialien und Energie, Institut für Silizium-Photovoltaik, Germany), Christian Teutloff, Robert Bittl (Freie Univ. Berlin, Germany), Oleksandr Astakhov, Friedhelm Finger (Forschungszentrum Jülich GmbH, Germany), Klaus Lips (Helmholtz-Zentrum Berlin für Materialien und Energie, Institut für Silizium-Photovoltaik, Germany)
Pagep. 195

4A2-4, ID 1312 (Time: 11:40 - 12:00)
TitleA Chemical Bonding Ab-Initio Theory Model for Stabler-Wronski Effect Defect Metastability in a-Si:H Phovoltaic Devices
Author*Gerald Lucovsky, Hang Yang, Jerry L. Whitten (North Carolina State Univ., U.S.A.)
Pagep. 196