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24th International Conference on
Amorphous and Nanocrystalline Semiconductors (ICANS 24)

Session 3A1  Si Photovoltaics Device Characterization
Time: 9:00 - 10:20 Wednesday, August 24, 2011
Location: Room 1
Chair: Yoshiaki Takeuchi (Mitsubishi Heavy Industry, Japan)

3A1-1, ID 1016 (Time: 9:00 - 9:40)
Title(Invited Paper) Impurities in Thin-Film Silicon: Influence on Material Properties and Solar Cell Performance
Author*Tsvetelina Merdzhanova, Jan Woerdenweber, Thilo Kilper, Uwe Zastrow (Forschungszentrum Jülich GmbH, Germany), Helmut Stiebig (Malibu GmbH & Co. KG, Germany), Wolfhard Beyer (Forschungszentrum Jülich GmbH/Malibu GmbH & Co. KG, Germany), Aad Gordijn (Forschungszentrum Jülich GmbH, Germany)
Pagep. 171

3A1-2, ID 1099 (Time: 9:40 - 10:00)
TitleEELS Measurements of Boron Concentration Profiles in p-a-SiC and n-i-p a-Si Solar Cells
Author*Bas B. Van Aken (ECN Solar Energy, Netherlands), Martial Duchamp, Rafal E. Dunin-Borkowski (Tech. Univ. of Denmark, Denmark), Wim J. Soppe (ECN Solar Energy, Netherlands)
Pagep. 172

3A1-3, ID 1115 (Time: 10:00 - 10:20)
TitlePhosphorus Cross-Contamination in Single-Chamber Processes for Thin-Film Silicon Solar Cells
Author*Jan Woerdenweber, Tsvetelina Merdzhanova, Thomas Zimmermann, Arjan Flikweert (Forschungszentrum Jülich GmbH, Germany), Helmut Stiebig, Wolfhard Beyer (Malibu GmbH & Co. KG, Germany), Aad Gordijn (Forschungszentrum Jülich GmbH, Germany)
Pagep. 173