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24th International Conference on
Amorphous and Nanocrystalline Semiconductors (ICANS 24)

Session 2B4  Chalcogenide Phase Change II
Time: 15:20 - 17:00 Tuesday, August 23, 2011
Location: Room 2
Chair: Gurinder K. Ahluwalia (College of North Atlantic, Canada)

2B4-1, ID 1162 (Time: 15:20 - 15:40)
TitleIntermediate-Range Atomic Structures in Amorphous Ge2Sb2Te5 Phase Change Material
Author*Shinya Hosokawa (Hiroshima Inst. of Tech., Japan), Wolf-Christian Pilgrim, Astrid Hohle, Daniel Szubrin (Univ. of Marburg, Germany), Nathalie Boudet, Jean-Francois Berar (CNRS, France), Kenji Maruyama (Niigata Univ., Japan), Gunnar Bruns, Matthias Wuttig (Rheinisch-Westfälische Technische Hochschule Aachen, Germany)
Pagep. 79

2B4-2, ID 1004 (Time: 15:40 - 16:00)
TitleGexSnyTe1-x-y Phase Change Alloys for Applications in Electronic Data Storage
Author*Jennifer Luckas (RWTH Aachen Univ./ Laboratoire de Génie Electrique de Paris, Germany), Christophe Longeaud (Laboratoire de Génie Electrique de Paris, France), Matthias Wuttig (RWTH Aachen Univ., Germany)
Pagep. 80

2B4-3, ID 1131 (Time: 16:00 - 16:20)
TitleInfluence of Doping on the Properties of Phase-Change Memory Materials on the Basis of Ge-Sb-Te System
Author*Sergey Kozyukhin (Russian Academy of Sciences, Russian Federation), Alexey Sherchenkov, Peter Lazarenko (Moscow State Institute of Electronic Technology (Technical Univ.), Russian Federation), Phuc Nguyen (Russian Academy of Sciences, Russian Federation), Alexey Babich (Moscow State Institute of Electronic Technology (Technical Univ.), Russian Federation)
Pagep. 81

2B4-4, ID 1067 (Time: 16:20 - 16:40)
TitleElectrical Transport Properties of Thin Films of Ge1Sb2Te4 and Ge2Sb2Te5 Phase-Change Materials
Author*Ling Xu, Lei Geng, Liang Tong, Dong Liu, Fei Yang, Jun Xu, Zhongyuan Ma, Weining Su, Kunji Chen (Nanjing Univ., China)
Pagep. 82