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24th International Conference on
Amorphous and Nanocrystalline Semiconductors (ICANS 24)

Session 2B3  Chalcogenide Phase Change I
Time: 13:20 - 15:00 Tuesday, August 23, 2011
Location: Room 2
Chair: K. Shimakawa (Gifu Univ., Japan)

2B3-1, ID 1013 (Time: 13:20 - 13:40)
TitleDefects and Electrical Storage Mechanism in GeSbTe Phase Change Materials
AuthorBolong Huang, *John Robertson (Cambridge Univ., U.K.)
Pagep. 76

2B3-4, ID 1170 (Time: 13:40 - 14:00)
TitleSub-Gap States in Ge2Sb2Te5 Phase Change Films
Author*Tamihiro Gotoh (Gunma Univ., Japan)
Pagep. 141

2B3-2, ID 1270 (Time: 14:00 - 14:40)
TitleAthermal Amorphisation of Chalcogenide Glasses and Phase-Change Alloys
Author*Alexander Kolobov, Paul Fons, Milos Krbal, Junji Tominaga (AIST, Japan), Tomoya Uruga (SPring-8, Japan)
Pagep. 77

2B3-3, ID 1003 (Time: 14:40 - 15:00)
Title(Invited Paper) Phase Change Materials: from Optical Data Storage to Novel Electronic Memories
Author*Matthias Wuttig (RWTH Aachen Univ., Germany)
Pagep. 78