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24th International Conference on
Amorphous and Nanocrystalline Semiconductors (ICANS 24)

Session 2A1  Si Microstructures I
Time: 9:00 - 10:20 Tuesday, August 23, 2011
Location: Room 1
Chair: S. Wagner (Princeton Univ., U.S.A.)

2A1-1, ID 1144 (Time: 9:00 - 9:20)
TitleMicrostructure of Hydrogenated Silicon Carbide Thin Films Prepared by Chemical Vapour Deposition Techniques
Author*Florian Köhler, Tao Chen, Maurice Nuys, Anna Heidt, Martina Luysberg, Friedhelm Finger, Reinhard Carius (Forschungszentrum Jülich GmbH, Germany)
Pagep. 54

2A1-2, ID 1220 (Time: 9:20 - 9:40)
TitleThe Nanostructural Analysis of Si:H Films based on Positron Annihilation Studies
Author*Jimmy Melskens, Arno Smets, Stephan Eijt, Henk Schut, Ekkes Brück, Miro Zeman (Delft Univ. of Tech., Netherlands)
Pagep. 55

2A1-3, ID 1044 (Time: 9:40 - 10:00)
TitleEllipsometry Characterization of a-Si:H Layers for Thin-Film Solar Cells
Author*Shota Kageyama, Masataka Akagawa, Hiroyuki Fujiwara (Gifu Univ., Japan)
Pagep. 56

2A1-4, ID 1039 (Time: 10:00 - 10:20)
TitleDerivation of the Near-Surface Dielectric Function of Amorphous Silicon from Photoelectron Loss Spectra
Author*Denis David (Univ. Federal da Bahia, Brazil), Christian Godet, Hussein Sabbah, Soraya Ababou-Girard, Francine Solal (Univ. Rennes 1, France), Virginia Chu, Joao Pedro Conde (INESC Microsistemas e Nanotechnologias and IN- Institute of Nanoscience and Nanotechnology, Portugal)
Pagep. 57