| Title | Thermal Quenching of Defect Photoluminescence and Recombination Rates of Electron-Hole Pairs in a-Si:H |
| Author | *Chisato Ogihara, Yuta Inagaki, Akinori Taketa (Yamaguchi Univ., Japan), Kazuo Morigaki (Hiroshima Inst. of Tech., Japan) |
| Page | p. 27 |
| Title | Space Charge Capacitance Spectroscopy in Amorphous Silicon Schottky Diodes: Theory, Modeling, and Experiments |
| Author | *Olga Maslova, Marie Estelle Gueunier-Farret, José Alvarez (Laboratoire de Génie Electrique de Paris, France), Alexandre Gudovskikh (Russian Academy of Sciences, Russian Federation), Eugene Terukov (A.F. Ioffe Physico-technical Institute, Russian Federation), Jean-Paul Kleider (Laboratoire de Génie Electrique de Paris, France) |
| Page | p. 28 |
| Title | On the Application of a Dimensionless Joint Density of States Formalism for Quantitative Characterization of the Optical Response of Hydrogenated Amorphous Silicon: A Review |
| Author | Jasmin J. Thevaril (Univ. of Windsor, Canada), *Stephen K. O'Leary (Univ. of British Columbia, Canada) |
| Page | p. 29 |
| Title | Comparative Study of Electro-Luminescence from Annealed Amorphous SiCx Single Layer and Amorphous Si/SiC Multilayer |
| Author | Yunjun Rui, Shuxin Li, *Jun Xu, Yunqing Cao, Xiaofan Jiang, Wei Li, Kunji Chen (Nanjing Univ., China) |
| Page | p. 30 |
| Title | Enhanced Spectral Response by Silicon Nitride Index Matching Layer in Amorphous Silicon Thin-Film Solar Cells |
| Author | *C.H. Hsu, Y.P. Lin, H.J. Hsu, C.K. Chuang, C.C. Tsai (National Chiao Tung Univ., Taiwan), C.C. Bi, C.H. Lu, C.H. Yeh (NexPower Technology Corp., Taiwan) |
| Page | p. 31 |