Âê̾ | (¾·ÂÔ¹Ö±é) ¶¯Í¶ÅÅÂΥȥó¥Í¥ëÀܹçÁǻҤòÍѤ¤¤¿¥¤¥ó¥á¥â¥ê¶¯²½³Ø½¬ |
Ãø¼Ô | *À¾ µÁ»Ë, ¥Ù¥ë¥À¥ó ¥é¥É¥¥, ´Ýµµ ¹§À¸ (Åì¼Ç), ÂÀÅÄ ·ò²ð, »³¸ý ¤Þ¤ê¤Ê, ã·Æ£ ¿¿À¡, Æ£°æ ¾ÏÊå, ½Ð¸ý ½ß (¥¥ª¥¯¥·¥¢)
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Title | (Invited Speech) In-memory Reinforcement Learning Using Ferroelectric Tunnel Junction Devices |
Author | *Yoshifumi Nishi, Radu Berdan, Takao Marukame (Toshiba), Kensuke Ota, Marina Yamaguchi, Masumi Saitoh, Shosuke Fujii, Jun Deguchi (Kioxia) |
¥Ú¡¼¥¸ | pp. 15 - 18 |
Âê̾ | ALDË¡¤ÇºîÀ½¤·¤¿C-dopedµÚ¤ÓC-free In2O3Ëì¤ò¥Á¥ã¥Í¥ë¤È¤·¤¿»À²½ÊªTFT¤ÎÈæ³Ó |
Ãø¼Ô | *¾®ÎÓ Î¦ (ÌÀÂç), À¸ÅÄÌÜ ½Ó½¨ (NIMS), ·ªÅç °ìÆÁ, ½÷²° ¿ò (ÌÀÂç), Âç°æ ¶Çɧ, ÃÓÅÄ Ä¾¼ù, ĹÅÄ µ®¹°, ÄÍ±Û °ì¿Î (NIMS), ¾®Ìº ¸ü»Ö (ÌÀÂç)
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Title | Comparison of Characteristics of Oxide TFT with C-doped and C-free In2O3 Channels by ALD |
Author | *Riku Kobayashi (Meiji Univ.), Toshihide Nabatame (NIMS), Kazunori Kurishima, Takashi Onaya (Meiji Univ.), Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi (NIMS), Atsushi Ogura (Meiji Univ.) |
¥Ú¡¼¥¸ | pp. 23 - 25 |
Âê̾ | GeɽÌÌÀ¶¾ô²½¥×¥í¥»¥¹¤òÍѤ¤¤¿Y2O3/Ge pMOSFETs¤ÎºîÀ½¤Èɾ²Á |
Ãø¼Ô | *ÀÐ°æ ´²¿Î (ÅìµþÍý²ÊÂç/»ºÁí¸¦), Àаæ ͵Ƿ, Ä¥ ʸ³¾, ¿¹ÅÄ ¹Ô§ (»ºÁí¸¦), ±óÆ£ Áï, Æ£Âå Çîµ (ÅìµþÍý²ÊÂç), Á°ÅÄ Ã¤Ïº (ÅìµþÍý²ÊÂç/»ºÁí¸¦)
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Title | Characterization of Y2O3/Ge pMOSFETs with Clean Ge Surface |
Author | *Hiroto Ishii (Tokyo Univ. of Science/AIST), Hiroyuki Ishii, Wen Hsin Chang, Yukinori Morita (AIST), Akira Endoh, Hiroki Fujishiro (Tokyo Univ. of Science), Tatsuro Maeda (Tokyo Univ. of Science/AIST) |
¥Ú¡¼¥¸ | pp. 31 - 35 |
Âê̾ | ÅÅ°µ°õ²Ä¤Ë¤è¤ëTiO2Ãæ¤Î»ÀÁǶõ¹¦Ê¬ÉÛ¤ÎÊѲ½¡§Âè°ì¸¶Íý·×»»¤Ë¤è¤ëVMCO¥á¥â¥êÆÃÀ¤Î¸¡Æ¤ |
Ãø¼Ô | *µèÀî ÂóÌé, Ĺ߷ Ω¼ù (ÀéÍÕÂç), ÀöÊ¿ ¾»¹¸, ÇòÀÐ ¸Æó (̾Âç), Ã滳 δ»Ë (ÀéÍÕÂç)
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Title | Impact of Applied Voltages on Oxygen-vacancy Distribution in TiO2: First-principles Study of VMCO-memory Characteristics |
Author | *Takuya Oikawa, Riki Nagasawa (Chiba Univ.), Masaaki Araidai, Kenji Shiraishi (Nagoya Univ.), Takashi Nakayama (Chiba Univ.) |
¥Ú¡¼¥¸ | pp. 55 - 60 |
Âê̾ | ž¼Ìµ»½Ñ¤òÍѤ¤¤¿Si´ðÈľå¤ÎɽÌ̾ȼͷ¿InGaAs PhotoFET¤Î¼Â¾Ú |
Ãø¼Ô | *ÂçÀÐ ÏÂÌÀ (»ºÁí¸¦/ÅìµþÍý²ÊÂç), Àаæ ͵Ƿ, Ä¥ ʸ³¾, À¶¿å Å´»Ê (»ºÁí¸¦), ÀÐ°æ ´²¿Î (»ºÁí¸¦/ÅìµþÍý²ÊÂç), Æ£Âå Çîµ, ±óÆ£ Áï (ÅìµþÍý²ÊÂç), Á°ÅÄ Ã¤Ïº (»ºÁí¸¦/ÅìµþÍý²ÊÂç)
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Title | Demonstration of Front Side Illumination InGaAs PhotoFET on Si Substrate Using Transfer Technology |
Author | *Kazuaki Oishi (AIST/Tokyo Univ. of Science), Hiroyuki Ishii, Wen Hsin Chang, Tetsuji Shimizu (AIST), Hiroto Ishii (AIST/Tokyo Univ. of Science), Hiroki Fujishiro, Akira Endoh (Tokyo Univ. of Science), Tatsuro Maeda (AIST/Tokyo Univ. of Science) |
¥Ú¡¼¥¸ | pp. 69 - 74 |
Âê̾ | (¾·ÂÔ¹Ö±é) ¥À¥¤¥ä¥â¥ó¥É¥Ç¥Ð¥¤¥¹¤ÈMOS³¦Ì̤θ½¾õ |
Ãø¼Ô | *¾¾ËÜ Íã, ºù°æ ³¤¶© (¶âÂôÂç), ²ÃÆ£ Ãè¸÷, ËÒÌî ½ÓÀ², ¾®ÁÒ À¯É§, ÃÝÆâ ÂçÊå (»ºÁí¸¦), »³ºê Áï, Ãö·§ ¹§É×, ÆÁÅÄ µ¬É× (¶âÂôÂç)
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Title | (Invited Speech) Current Status of Diamond Device and MOS Interface |
Author | *Tsubasa Matsumoto, Ukyo Sakurai (Kanazawa Univ.), Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi (AIST), Satoshi Yamasaki, Takao Inokuma, Norio Tokuda (Kanazawa Univ.) |
¥Ú¡¼¥¸ | pp. 75 - 78 |
Âê̾ | Al2O3/¦Â-Ga2O3¥¹¥¿¥Ã¥¯¹½Â¤¤ÎPMA¸ú²Ì¤È³¦ÌÌÆÃÀ¤Î´Ø·¸ |
Ãø¼Ô | *×¢À¥ ²í»Ë (¼Ç±º¹©Âç), À¸ÅÄÌÜ ½Ó½¨ (NIMS), Á°ÅÄ ±ÍΤ¹á (¼Ç±º¹©Âç), Âç°æ ¶Çɧ, ÃÓÅÄ Ä¾¼ù, ¿§Àî ˧¹¨, ¾®½Ð ¹¯É× (NIMS), À¶Ìî È¥ (¼Ç±º¹©Âç)
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Title | Relationship between PMA Effect and Interface Characteristics of Al2O3/¦Â-Ga2O3 Stack Structure |
Author | *Masafumi Hirose (Shibaura Inst. of Tech.), Toshihide Nabatame (NIMS), Erika Maeda (Shibaura Inst. of Tech.), Akihiko Ohi, Naoki Ikeda, Yoshihiro Irokawa, Yasuo Koide (NIMS), Hajime Kiyono (Shibaura Inst. of Tech.) |
¥Ú¡¼¥¸ | pp. 79 - 81 |
Âê̾ | GaN/HfSiOx¥¥ã¥Ñ¥·¥¿¤ÎÅŵ¤ÆÃÀ¤ËÂФ¹¤ëHfSiOxÀä±ïËì¤ÎËì¸ü°Í¸À |
Ãø¼Ô | *Á°ÅÄ ±ÍΤ¹á (¼Ç±º¹©Âç), À¸ÅÄÌÜ ½Ó½¨ (NIMS), ×¢úó ²í»Ë (¼Ç±º¹©Âç), °æ¾å ËüΤ, Âç°æ ¶Çɧ, ÃÓÅÄ Ä¾¼ù (NIMS), ±öºê ¹¨»Ê (̾Âç), À¶Ìî È¥ (¼Ç±º¹©Âç)
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Title | Thickness Dependence of HfSiOx Insulator on Electrical Properties of GaN/HfSiOx Capacitor |
Author | *Erika Maeda (Shibaura Inst. of Tech.), Toshihide Nabatame (NIMS), Masafumi Hirose (Shibaura Inst. of Tech.), Mari Inoue, Akihiko Ohi, Naoki Ikeda (NIMS), Koji Shiozaki (Nagoya Univ.), Hajime Kiyono (Shibaura Inst. of Tech.) |
¥Ú¡¼¥¸ | pp. 83 - 86 |
Âê̾ | GaNÇöËì¤Ë¤ª¤±¤ë¤é¤»¤óž°Ì¤ª¤è¤ÓMgÉÔ½ãʪ¤ÈÅÅ»ÒʪÀ¤ÎÁê´Ø¡§Âè°ì¸¶Íý·×»»¤Ë´ð¤Å¤¯ÍýÏÀ²òÀÏ |
Ãø¼Ô | *ÃæÌî ¿ò»Ö, ¸¶Åè ÍDzð, Âç²ÏÆâ ͦÅÍ, ĹÀî ·òÂÀ, ÀöÊ¿ ¾»¹¸, ÇòÀÐ ¸Æó, ²¡»³ ½ß (̾Âç), Áð¾ì ¾´ (³Ø½¬±¡Âç), ´¨Àî µÁ͵ (¶åÂç), ÅÄÃæ ÆØÇ·, ËÜÅÄ Á±±û, Å·Ìî ¹À (̾Âç)
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Title | Theoretical Study on Relationship between Screw Dislocation with Mg Impurities and Electronic Property in GaN Thin Films |
Author | *Takashi Nakano, Yosuke Harashima, Yuto Ohkawachi, Kenta Chokawa, Masaaki Araidai, Kenji Shiraishi, Atsushi Oshiyama (Nagoya Univ.), Akira Kusaba (Gakushuin Univ.), Yoshihiro Kangawa (Kyushu Univ.), Atsushi Tanaka, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) |
¥Ú¡¼¥¸ | pp. 87 - 92 |
Âê̾ | NAP-HARPES¤Ë¤è¤ë¥²¡¼¥ÈÀÑÁØÇöË쳦ÌÌ¿¼¤µÊý¸þ¥×¥í¥Õ¥¡¥¤¥ë¤ÎÆ°Âַ׬ˡ¤Î³«È¯ |
Ãø¼Ô | *ËÅÄ ÃÒ»Ë (ÅìËÌÂç), »³ËÜ Ãμù (ʼ¸Ë¸©Î©Âç), µÈ¼ ¿¿»Ë (¥¹¥×¥ê¥ó¥°¥¨¥¤¥È¥µ¡¼¥Ó¥¹), ½»ÅÄ ¹°Í´, »°º¬À¸ ¿¸ (¥Þ¥Ä¥À), Ä®ÅÄ ²íÉð (¥·¥¨¥ó¥¿¥ª¥ß¥¯¥í¥ó), µÈ±Û ¾Ïδ (¸¶»ÒÎϵ¡¹½), µÈÀî ¾´ (ÅìËÌÂç), ÎëÌÚ Å¯, ²£»³ ÏÂ»Ê (ʼ¸Ë¸©Î©Âç)
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Title | Developing Dynamic Measurement Techniques for Depth Profiles of Gate Stacked Film Interfaces by NAP-HARPES (NAP-HARPES: Near Ambient Pressure Hard X-ray Angle-Resolved PhotoEmission Spectroscopy) |
Author | *Satoshi Toyoda (Tohoku Univ.), Tomoki Yamamoto (Univ. of Hyogo), Masashi Yoshimura (SPring-8 Service), Hirosuke Sumida, Susumu Mineoi (Mazda), Masatake Machida (Scienta Omicron), Akitaka Yoshigoe (JAEA), Akira Yoshikawa (Tohoku Univ.), Satoru Suzuki, Kazushi Yokoyama (Univ. of Hyogo) |
¥Ú¡¼¥¸ | pp. 93 - 96 |
Âê̾ | SiC p¥Á¥ã¥Í¥ëMOSFET¤ÎÀµ¹¦Í¢Á÷µ¡¹½¤Î²òÀÏ |
Ãø¼Ô | *²¬ËÜ Âç, ¼þ À±±ê, Ä¥ °°Ë§ (ÃÞÇÈÂç), À÷ë Ëþ, ²¬ËÜ ¸÷±û, È«»³ ůÉ×, ¸¶ÅÄ ¿®²ð (»ºÁí¸¦), ´ä¼¼ ·û¹¬, ÌðÌî ͵»Ê (ÃÞÇÈÂç)
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Title | Analysis of Hole Transport Mechanisms in p-Channel SiC MOSFETs |
Author | *Dai Okamoto, Xingyan Zhou, Xufang Zhang (Univ. of Tsukuba), Mitsuru Sometani, Mitsuo Okamoto, Tetsuo Hatakeyama, Shinsuke Harada (AIST), Noriyuki Iwamuro, Hiroshi Yano (Univ. of Tsukuba) |
¥Ú¡¼¥¸ | pp. 97 - 100 |
Âê̾ | ¥·¥ê¥³¥óȿžÁØ¥Á¥ã¥Í¥ëÃæ¤Î²ÁÅŻҤÎÌÌÆâ͸ú¼ÁÎÌ |
Ãø¼Ô | *ÉðÅÄ ¤µ¤¯¤é, ¹¾ÇÈ¸Í Ã£ºÈ (NAIST), Artoni K. R. Ang (̾¹©Âç), ºäÅÄ ÃÒ͵ (Åì¥ì), ÂçÌç ´² (ËÅÄÍý¸¦), Çòß· Űϯ (»ºÁí¸¦), ¹â¶¶ ÉÒÃË (³Ø·ÝÂç), °ð²¬ µ£ (ΰµåÂç)
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Title | In-plane Effective Masses of Valence Electrons in Si Inversion Layer Channels |
Author | *Sakura N. Takeda, Tatsuya Ebato (NAIST), Artoni K. R. Ang (Nagoya Inst. of Tech.), Tomohiro Sakata (Toray Research Center), Hiroshi Daimon (Toyota Riken), Tetsuro Shirasawa (AIST), Toshio Takahashi (Tokyo Gakugei Univ.), Takeshi Inaoka (Univ. of the Ryukyus) |
¥Ú¡¼¥¸ | pp. 101 - 104 |
Âê̾ | ¿·ë¾½Si1-x-yGexSny»°¸µº®¾½ÇöËì¤ÎÇ®ÅÅÆÃÀÀ©¸æ |
Ãø¼Ô | *ÃæÄÍ Íý, ×Å ±Ñ (̾Âç), ÉÄ é², ¹â Û¿, 刘 Äè±í (·ËÎÓÅŻҲʵ»Âç), ¹õß· ¾»»Ö (̾Âç), ºâËþ ï¯ÌÀ (̾¾ëÂç)
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Title | Control of Thermoelectronic Performance of Polycrystalline Si1-x-yGexSny Ternary Alloy Thin Films |
Author | *Osamu Nakatsuka, Ying Peng (Nagoya Univ.), Lei Miao, Jie Gao, Chengyan Liu (Guilin Univ. of Electronic Technology), Masashi Kurosawa (Nagoya Univ.), Shigeaki Zaima (Meijo Univ.) |
¥Ú¡¼¥¸ | pp. 117 - 120 |
Âê̾ | ¥Õ¥é¥Ã¥·¥å¥é¥ó¥×¥¢¥Ë¡¼¥ëË¡¤òÍѤ¤¤¿GOI´ðÈľå¸ÇÁêÀ®Ä¹GeSn n-MOSFETs¤ÎºîÀ½ |
Ãø¼Ô | *²¬ Çî»Ë, ¿åÎÓ ÏË, ¿¹ µ®ÍÎ, ÀÐÀî ͳµª (»ºÁí¸¦), ºÙ°æ Âî¼£, »Ö¼ ¹Í¸ù, ÅÏÉô Ê¿»Ê (ºåÂç), ±óÆ£ ÏÂɧ (»ºÁí¸¦)
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Title | Solid-phase Grown GeSn n-MOSFETs on GOI Wafer Fabricated by Flash Lamp Annealing |
Author | *Hiroshi Oka, Wataru Mizubayashi, Takahiro Mori, Yuki Ishikawa (AIST), Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.), Kazuhiko Endo (AIST) |
¥Ú¡¼¥¸ | pp. 121 - 124 |
Âê̾ | ¼¼²¹¤Ç¤Î¶ËÇö¶â°Ëì»À²½Ë¡¤Ë¤è¤ë´ðÈÄ»À²½¤òÍÞÀ©¤·¤¿ÎɼÁ¤ÊAl2O3/4H-SiC³¦Ì̤μ¸½ |
Ãø¼Ô | *ÅÚ°æ ÂóÇÏ, ¼Æ»³ ÌÐµ× (̾Âç), ÃÝÆâ ϲÎÆà (°¦Ãι©Âç), ºä²¼ ËþÃË, ÅIJ¬ µªÇ· (̾Âç), À¶¿å »°Áï (»ºÁí¸¦¡¦Ì¾ÂçGaN-OIL), ÃæÄÍ Íý (̾Âç)
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Title | Realization of Superior Al2O3/4H-SiC Interface with Suppressing Substrate Oxidation by Ultrathin Metal Layer Oxidation at Room Temperature |
Author | *Takuma Doi, Shigehisa Shibayama (Nagoya Univ.), Wakana Takeuchi (Aichi Inst. of Tech.), Mitsuo Sakashita, Noriyuki Taoka (Nagoya Univ.), Mitsuaki Shimizu (AIST-NU GaN-OIL), Osamu Nakatsuka (Nagoya Univ.) |
¥Ú¡¼¥¸ | pp. 129 - 132 |
Âê̾ | |
Ãø¼Ô | *»ûÈø Ë, ÄÔ ±ÑÆÁ (ÉÙ»ÎÅŵ¡), ºÙ°æ Âî¼£ (ºåÂç), Ä¥ °°Ë§, ÌðÌî ͵»Ê (ÃÞÇÈÂç), »Ö¼ ¹Í¸ù, ÅÏÉô Ê¿»Ê (ºåÂç)
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Title | The Role of Oxygen Ambient Anneal for Ba-incorporated SiO2/SiC Interface |
Author | *Yutaka Terao, Hidenori Tsuji (Fuji Electric), Takuji Hosoi (Osaka Univ.), Xufang Zhang, Hiroshi Yano (Univ. of Tsukuba), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) |
¥Ú¡¼¥¸ | pp. 137 - 139 |
Âê̾ | ƼÇÛÀþ¤Î²¹Åپ徺¤ËµÚ¤Ü¤¹³¦ÌÌÇ®Äñ¹³¤Î±Æ¶Á |
Ãø¼Ô | *¥¸¥ã¥ó Å·Âî, ¿¥ÅÄ ³¤ÅÍ, ÇÏ ¿ãů, ÉÙÅÄ ´ð͵, Éðß· ¹¨¼ù, ÌÜºê ¹ÒÊ¿ (ÁáÂç), ¸â ɧ¼ô, ½ù °ìÉÌ (NIMS), ¾¾Àî µ® (»ºÁí¸¦), ¾¾ÌÚ Éðͺ, ÅÏîµ ¹§¿® (ÁáÂç)
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Title | Impact of Thermal Boundary Resistance on Temperature Rise of Cu Interconnects |
Author | *Tianzhou Zhan, Kaito Oda, Shuaizhe Ma, Motohiro Tomita, Hiroki Takezawa, Kohei Mesaki (Waseda Univ.), Yen-ju Wu, Yibin Xu (NIMS), Takashi Matsukawa, Takeo Matsuki (AIST), Takanobu Watanabe (Waseda Univ.) |
¥Ú¡¼¥¸ | pp. 149 - 152 |
Âê̾ | ¥×¥ì¡¼¥Ê·¿Si¥Ê¥Î¥ï¥¤¥äÇ®ÅťǥХ¤¥¹¤ÎÇÛÀþ¹½Â¤Àß·× |
Ãø¼Ô | *¿¥ÅÄ ³¤ÅÍ, °ÂÉô ¹î´ð, ÉÙÅÄ ´ð͵ (ÁáÂç), ¾¾Àî µ®, ¾¾ÌÚ Éðͺ (»ºÁí¸¦), ÅÏîµ ¹§¿® (ÁáÂç)
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Title | Interconnect Structure Engineering of Planar Si-nanowire Thermoelectric Generator |
Author | *Kaito Oda, Katsuki Abe, Motohiro Tomita (Waseda Univ.), Takashi Matsukawa, Takeo Matsuki (AIST), Takanobu Watanabe (Waseda Univ.) |
¥Ú¡¼¥¸ | pp. 153 - 156 |
Âê̾ | Àä±ïËìËä¤á¹þ¤ßSi-NW¤òÍѤ¤¤¿Ç®ÅťǥХ¤¥¹¤Ë¤ª¤±¤ëSi-NW´Öµ÷Î¥¤¬È¯ÅÅÀǽ¤ËµÚ¤Ü¤¹±Æ¶Á |
Ãø¼Ô | *ÅÄîµ ºé²Ú, ¿¥ÅÄ ³¤ÅÍ, Éðß· ¹¨¼ù, ÌÜºê ¹ÒÊ¿, ÉÙÅÄ ´ð͵ (ÁáÂç), ¾¾ÌÚ Éðͺ, ¾¾Àî µ® (»ºÁí¸¦), ÅÏîµ ¹§¿® (ÁáÂç)
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Title | Effect of Si-Nanowire Inter-space on the Performance of Si-Nanowire Thermoelectric Generator Embedding in Dielectric Film |
Author | *Sakika Tanabe, Kaito Oda, Hiroki Takezawa, Kohei Mesaki, Motohiro Tomita (Waseda Univ.), Takeo Matsuki, Takashi Matsukawa (AIST), Takanobu Watanabe (Waseda Univ.) |
¥Ú¡¼¥¸ | pp. 157 - 160 |
Âê̾ | ¥Ñ¥ï¡¼IC¤Ë¸þ¤±¤¿n- ¤ª¤è¤Óp-¥Á¥ã¥ó¥Í¥ëGaN MOSFET¤ÎÆ°ºî¼Â¾Ú |
Ãø¼Ô | Nguyen Huu Trung (»ºÁí¸¦-̾ÂçGaN-OIL), *ÅIJ¬ µªÇ· (̾Âç), »³ÅÄ ±Ê, ¹â¶¶ ¸À½ï, »³ÅÄ ¼÷°ì, À¶¿å »°Áï (»ºÁí¸¦-̾ÂçGaN-OIL)
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Title | First Experimental Demonstration of n- and p-GaN MOSFETs Operation |
Author | Nguyen Huu Trung (AIST-NU GaN-OIL), *Noriyuki Taoka (Nagoya Univ.), Hisashi Yamada, Tokio Takahashi, Toshikazu Yamada, Mitsuaki Shimizu (AIST-NU GaN-OIL) |
¥Ú¡¼¥¸ | pp. 169 - 172 |
Âê̾ | µ¤ÁêÈ¿±þ¤Î´ÑÅÀ¤«¤é¸«¤¿GaN MOVPEÃæ¤ÎúÁǺ®Æþ¤Î¸¶°ø¤Î²òÌÀ |
Ãø¼Ô | *Âç²ÏÆâ ͦÅÍ, ĹÀî ·òÂÀ, ÀöÊ¿ ¾»¹¸ (̾Âç), Áð¾ì ¾´ (³Ø½¬±¡Âç), ´¨Àî µÁ͵ (̾¸Å²°Âç/¶å½£Âç), ³ÁËÜ ¹À°ì (¶åÂç), ³ð Àµ, ¿·ÅÄ ½£¸ã, ËÜÅÄ Á±±û, Å·Ìî ¹À, ÇòÀÐ ¸Æó (̾Âç)
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Title | Study of the Cause of Carbon Incorporation in GaN MOVPE from the Viewpoint of Gas Phase Reaction |
Author | *Yuto Okawachi, Kenta Chokawa, Masaaki Araidai (Nagoya Univ.), Akira Kusaba (Gakushuin Univ.), Yoshihiro Kangawa (Nagoya Univ./Kyushu Univ.), Koichi Kakimoto (Kyushu Univ.), Zheng Ye, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Kenji Shiraishi (Nagoya Univ.) |
¥Ú¡¼¥¸ | pp. 173 - 177 |
Âê̾ | Ê·°Ïµ¤À©¸æÆðXÀþ¸÷ÅÅ»Òʬ¸÷¤Ë¤è¤ëAuÇöËì/Si´ðÈij¦ÌÌÈ¿±þ¤ÎưŪ´Ñ»¡ |
Ãø¼Ô | *ËÅÄ ÃÒ»Ë (ÅìËÌÂç), »³ËÜ Ãμù (ʼ¸Ë¸©Î©Âç), À¾ ÀŲÂ, ²¼½Ð ľ¹¬ (¸¶»ÒÎϵ¡¹½), µÈ¼ ¿¿»Ë (¥¹¥×¥ê¥ó¥°¥¨¥¤¥È¥µ¡¼¥Ó¥¹), ½»ÅÄ ¹°Í´, »°º¬À¸ ¿¸ (¥Þ¥Ä¥À), Ä®ÅÄ ²íÉð (¥·¥¨¥ó¥¿¥ª¥ß¥¯¥í¥ó), ÎëÌÚ Å¯, ²£»³ ÏÂ»Ê (ʼ¸Ë¸©Î©Âç), µÈÀî ¾´ (ÅìËÌÂç), ÉÙ±Ê °¡´õ, µÈ±Û ¾Ïδ (¸¶»ÒÎϵ¡¹½)
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Title | Dynamic Observation of Interfacial Reactions at the Au Film/Si Substrate by Ambient-Controlled Soft X-ray Photoemission Spectroscopy |
Author | *Satoshi Toyoda (Tohoku Univ.), Tomoki Yamamoto (Univ. of Hyogo), Shizuka Nishi, Naoyuki Shimode (JAEA), Masashi Yoshimura (SPring-8 Service), Hirosuke Sumida, Susumu Mineoi (Mazda), Masatake Machida (Scienta Omicron), Satoru Suzuki, Kazushi Yokoyama (Univ. of Hyogo), Akira Yoshikawa (Tohoku Univ.), Aki Tominaga, Akitaka Yoshigoe (JAEA) |
¥Ú¡¼¥¸ | pp. 193 - 196 |