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2020ǯ1·î30Æü(ÌÚ)

Registration
19:30 - 20:00
T  ¥Á¥å¡¼¥È¥ê¥¢¥ë
20:00 - 21:30
2020ǯ1·î31Æü(¶â)

Opening
8:55 - 9:00
1  ¶¯Í¶ÅÅÂκàÎÁ¡¦¥Ç¥Ð¥¤¥¹
9:00 - 10:30
Coffee Break
10:30 - 10:50
2  »À²½Êª³¦ÌÌ
10:50 - 12:10
½¸¹ç¼Ì¿¿¡õÃë¿©
12:10 - 13:20
3  Ç®À©¸æ
13:20 - 14:10
4  ´ðÄ´¹Ö±é1
14:10 - 15:00
Coffee Break
15:00 - 15:20
5  ´ë²è¥»¥Ã¥·¥ç¥óÁ°È¾
15:20 - 16:05
Break
16:05 - 16:25
6  ´ë²è¥»¥Ã¥·¥ç¥ó¸åȾ
16:25 - 17:10
°ÜÆ°
17:10 - 17:30
º©¿Æ²ñ
17:30 - 19:30
P  ¥Ý¥¹¥¿¡¼¥»¥Ã¥·¥ç¥ó
19:30 - 21:30
2020ǯ2·î1Æü(ÅÚ)

7  ´ðÄ´¹Ö±é2
9:00 - 9:50
8  ¥á¥â¥ê
9:50 - 10:40
Coffee Break
10:40 - 11:00
9  ¥Õ¥©¥È¥Ë¥¯¥¹
11:00 - 12:10
Ãë¿©
12:10 - 13:10
10  ¥Ñ¥ï¡¼¥Ç¥Ð¥¤¥¹
13:10 - 14:40
Coffee Break
14:40 - 15:00
11  ɾ²Á
15:00 - 16:00
Break
16:00 - 16:20
Closing (Young award ceremony)
16:20 - 17:00


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2020ǯ1·î30Æü(ÌÚ)

[¥»¥Ã¥·¥ç¥óɽ¤Ø]

¥»¥Ã¥·¥ç¥ó T  ¥Á¥å¡¼¥È¥ê¥¢¥ë
Æü»þ: 2020ǯ1·î30Æü(ÌÚ) 20:00 - 21:30

T-1 (»þ´Ö: 20:00 - 21:30)
Âê̾ÎÌ»Òʬ´ô¥Þ¥·¥ó¤È¥·¥ß¥å¥ì¡¼¥Æ¥Ã¥Éʬ´ô¥Þ¥·¥ó
Ãø¼Ô*¸åÆ£ È»¿Í (Åì¼Ç)
TitleQuantum Bifurcation Machine and Simulated Bifurcation Machine
Author*Hayato Goto (Toshiba)
¥Ú¡¼¥¸pp. 201 - 222



2020ǯ1·î31Æü(¶â)

[¥»¥Ã¥·¥ç¥óɽ¤Ø]

¥»¥Ã¥·¥ç¥ó 1  ¶¯Í¶ÅÅÂκàÎÁ¡¦¥Ç¥Ð¥¤¥¹
Æü»þ: 2020ǯ1·î31Æü(¶â) 9:00 - 10:30

1-1 (»þ´Ö: 9:00 - 9:20)
Âê̾HfO2¶¯Í¶ÅÅÂÎ¥á¥â¥ê¤ÎÄãÅÅ°µÆ°ºî¤Ë¸þ¤±¤¿¹½Â¤Àß·×
Ãø¼Ô*±¦ÅÄ ¿¿»Ê, ÂÀÅÄ ÍµÇ·, ¿¹ÅÄ ¹Ô§ (»ºÁí¸¦)
TitleStructural Design of Ferroelectric HfO2 Films for Low-Operation Voltage Memories
Author*Shinji Migita, Hiroyuki Ota, Yukinori Morita (AIST)
¥Ú¡¼¥¸pp. 1 - 4

1-2 (»þ´Ö: 9:20 - 9:40)
Âê̾Äã²¹¥¦¥§¥Ã¥ÈÇ®½èÍý¤Ë¤è¤ë¶¯Í¶ÅÅÀ­¤Î¥¢¥ó¥É¡¼¥×ZrO2ÇöËì¤Î·ÁÀ®
Ãø¼Ô*¼Æ»³ Ìе×, ±ÊÌî ¾çÂÀϺ, ºä²¼ ËþÃË, ÃæÄÍ Íý (̾Âç)
TitleFormation of Ferroelectric Undoped ZrO2 Thin Film Using Low Temperature Wet Annealing
Author*Shigehisa Shibayama, Jotaro Nagano, Mitsuo Sakashita, Osamu Nakatsuka (Nagoya Univ.)
¥Ú¡¼¥¸pp. 5 - 8

1-3 (»þ´Ö: 9:40 - 10:00)
Âê̾ÂÓÅŤ¬Í¶µ¯¤¹¤ë¶¯Í¶ÅŤʼÐÊý¾½HfO2¤Î·ÁÀ®¡§»ÀÁǶõ¹¦¤È¥É¡¼¥Ñ¥ó¥È¤ÎÌò³ä
Ãø¼Ô*ÇòÀРͪ¿Í, Ĺ߷ Ω¼ù (ÀéÍÕÂç), ÀöÊ¿ ¾»¹¸, ÇòÀÐ ¸­Æó (̾Âç), Ã滳 δ»Ë (ÀéÍÕÂç)
TitleCharging-induced Formation of Ferroelectric Orthorhombic HfO2; Roles of Oxygen Vacancy and Dopants
Author*Yuto Shiraishi, Riki Nagasawa (Chiba Univ.), Masaaki Araidai, Kenji Shiraishi (Nagoya Univ.), Takashi Nakayama (Chiba Univ.)
¥Ú¡¼¥¸pp. 9 - 14

1-4 (»þ´Ö: 10:00 - 10:30)
Âê̾(¾·ÂÔ¹Ö±é) ¶¯Í¶ÅÅÂΥȥó¥Í¥ëÀܹçÁǻҤòÍѤ¤¤¿¥¤¥ó¥á¥â¥ê¶¯²½³Ø½¬
Ãø¼Ô*À¾ µÁ»Ë, ¥Ù¥ë¥À¥ó ¥é¥É¥¥, ´Ýµµ ¹§À¸ (Åì¼Ç), ÂÀÅÄ ·ò²ð, »³¸ý ¤Þ¤ê¤Ê, ã·Æ£ ¿¿À¡, Æ£°æ ¾ÏÊå, ½Ð¸ý ½ß (¥­¥ª¥¯¥·¥¢)
Title(Invited Speech) In-memory Reinforcement Learning Using Ferroelectric Tunnel Junction Devices
Author*Yoshifumi Nishi, Radu Berdan, Takao Marukame (Toshiba), Kensuke Ota, Marina Yamaguchi, Masumi Saitoh, Shosuke Fujii, Jun Deguchi (Kioxia)
¥Ú¡¼¥¸pp. 15 - 18


[¥»¥Ã¥·¥ç¥óɽ¤Ø]

¥»¥Ã¥·¥ç¥ó 2  »À²½Êª³¦ÌÌ
Æü»þ: 2020ǯ1·î31Æü(¶â) 10:50 - 12:10

2-1 (»þ´Ö: 10:50 - 11:10)
Âê̾¥Ð¥¤¥¢¥¹°õ²Ã¹ÅXÀþ¸÷ÅÅ»Òʬ¸÷Ë¡¤Ë¤è¤ëHfO2/SiO2³¦ÌÌ¥À¥¤¥Ý¡¼¥ëÊÑÄ´¤Î¸¡½Ð
Ãø¼Ô*ÌîÊ¿ Çî»Ê, ÏÂÅÄ Îå¸× (ÅìµþÅÔ»ÔÂç), ÊÝ°æ ¹¸ (¹âµ±ÅÙ¸÷²Ê³Ø¸¦µæ¥»¥ó¥¿¡¼), µÜÅÄ Åµ¹¬ (»ºÁí¸¦)
TitleBias-Applied Hard X-ray Photoelectron Spectroscopy Study of HfO2/SiO2 Interface Dipole Modulation
Author*Hiroshi Nohira, Reito Wada (Tokyo City Univ.), Akira Yasui (JASRI), Noriyuki Miyata (AIST)
¥Ú¡¼¥¸pp. 19 - 22

2-2 (»þ´Ö: 11:10 - 11:30)
Âê̾ALDË¡¤ÇºîÀ½¤·¤¿C-dopedµÚ¤ÓC-free In2O3Ëì¤ò¥Á¥ã¥Í¥ë¤È¤·¤¿»À²½ÊªTFT¤ÎÈæ³Ó
Ãø¼Ô*¾®ÎÓ Î¦ (ÌÀÂç), À¸ÅÄÌÜ ½Ó½¨ (NIMS), ·ªÅç °ìÆÁ, ½÷²° ¿ò (ÌÀÂç), Âç°æ ¶Çɧ, ÃÓÅÄ Ä¾¼ù, ĹÅÄ µ®¹°, ÄÍ±Û °ì¿Î (NIMS), ¾®Ìº ¸ü»Ö (ÌÀÂç)
TitleComparison of Characteristics of Oxide TFT with C-doped and C-free In2O3 Channels by ALD
Author*Riku Kobayashi (Meiji Univ.), Toshihide Nabatame (NIMS), Kazunori Kurishima, Takashi Onaya (Meiji Univ.), Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi (NIMS), Atsushi Ogura (Meiji Univ.)
¥Ú¡¼¥¸pp. 23 - 25

2-3 (»þ´Ö: 11:30 - 11:50)
Âê̾¥È¥ó¥Í¥ëFETÍÑn·¿TixZn1-xO1+xµÚ¤ÓGa2xZn1-xO1+2x¥Á¥ã¥Í¥ë¤Î¸¡Æ¤
Ãø¼Ô*·ªÅç °ìÆÁ (NIMS/ÆüËܳؽѿ¶¶½²ñÆÃÊ̸¦µæ°÷PD/ÌÀÂç), ¾®Ìº ¸ü»Ö (ÌÀÂç), Ãεþ ˭͵ (NIMS), ĹÅÄ µ®¹° (NIMS/ÌÀÂç)
TitleStudy on N-type TixZn1-xO1+x and Ga2xZn1-xO1+2x Channel for Tunnel FETs
Author*Kazunori Kurishima (NIMS/JSPS Research Fellow PD/Meiji Univ.), Atsushi Ogura (Meiji Univ.), Toyohiro Chikyow (NIMS), Takahiro Nagata (NIMS/Meiji Univ.)
¥Ú¡¼¥¸pp. 27 - 30

2-4 (»þ´Ö: 11:50 - 12:10)
Âê̾GeɽÌÌÀ¶¾ô²½¥×¥í¥»¥¹¤òÍѤ¤¤¿Y2O3/Ge pMOSFETs¤ÎºîÀ½¤Èɾ²Á
Ãø¼Ô*ÀÐ°æ ´²¿Î (ÅìµþÍý²ÊÂç/»ºÁí¸¦), Àаæ ͵Ƿ, Ä¥ ʸ³¾, ¿¹ÅÄ ¹Ô§ (»ºÁí¸¦), ±óÆ£ Áï, Æ£Âå Çîµ­ (ÅìµþÍý²ÊÂç), Á°ÅÄ Ã¤Ïº (ÅìµþÍý²ÊÂç/»ºÁí¸¦)
TitleCharacterization of Y2O3/Ge pMOSFETs with Clean Ge Surface
Author*Hiroto Ishii (Tokyo Univ. of Science/AIST), Hiroyuki Ishii, Wen Hsin Chang, Yukinori Morita (AIST), Akira Endoh, Hiroki Fujishiro (Tokyo Univ. of Science), Tatsuro Maeda (Tokyo Univ. of Science/AIST)
¥Ú¡¼¥¸pp. 31 - 35


[¥»¥Ã¥·¥ç¥óɽ¤Ø]

¥»¥Ã¥·¥ç¥ó 3  Ç®À©¸æ
Æü»þ: 2020ǯ1·î31Æü(¶â) 13:20 - 14:10

3-1 (»þ´Ö: 13:20 - 13:40)
TitleOrigin of Anomalous Phonon State in SiGe Alloys Studied with Molecular Dynamics
Author*Sylvia Yuk Yee Chung, Motohiro Tomita, Ryo Yokogawa (Waseda Univ.), Atsushi Ogura (Meiji Univ.), Takanobu Watanabe (Waseda Univ.)
¥Ú¡¼¥¸pp. 37 - 40

3-2 (»þ´Ö: 13:40 - 14:10)
Âê̾(¾·ÂÔ¹Ö±é) Ç®¤Î»þ¶õ´ÖÀ©¸æ¤Ë¤è¤ëʬ»Ò¥»¥ó¥µ¤ÎÄ㥨¥Í¥ë¥®¡¼²½
Ãø¼ÔÅÄÃæ µ®µ×, *ÆâÅÄ ·ú (ÅìÂç)
Title(Invited Speech) Sub-mW and ppm-Level Detection of Gas Molecules for Breath-Based Healthcare
AuthorTakahisa Tanaka, *Ken Uchida (Univ. of Tokyo)
¥Ú¡¼¥¸pp. 41 - 43


[¥»¥Ã¥·¥ç¥óɽ¤Ø]

¥»¥Ã¥·¥ç¥ó 4  ´ðÄ´¹Ö±é1
Æü»þ: 2020ǯ1·î31Æü(¶â) 14:10 - 15:00

4-1 (»þ´Ö: 14:10 - 15:00)
Âê̾(´ðÄ´¹Ö±é) ÆüËÜÅŻһº¶È¤Î¿êÂà¤Ë²¿¤ò³Ø¤Ö¤«
Ãø¼Ô*À¾Â¼ µÈͺ (¥¸¥ã¡¼¥Ê¥ê¥¹¥È)
Title(Keynote Speech) What We Learn from the Decline of Japanese Electronics Industry
Author*Yoshio Nishimura (Journalist)
¥Ú¡¼¥¸pp. 45 - 48



2020ǯ2·î1Æü(ÅÚ)

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¥»¥Ã¥·¥ç¥ó 7  ´ðÄ´¹Ö±é2
Æü»þ: 2020ǯ2·î1Æü(ÅÚ) 9:00 - 9:50

7-1 (»þ´Ö: 9:00 - 9:50)
Âê̾(´ðÄ´¹Ö±é) ÆüËܤÎSi¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹¤ÎŸ˾
Ãø¼Ô*Ê¿ËÜ ½ÓϺ (ÅìÂç)
Title(Keynote Speech) Future Prospects of Si Electronics in Japan
Author*Toshiro Hiramoto (Univ. of Tokyo)
¥Ú¡¼¥¸pp. 49 - 50


[¥»¥Ã¥·¥ç¥óɽ¤Ø]

¥»¥Ã¥·¥ç¥ó 8  ¥á¥â¥ê
Æü»þ: 2020ǯ2·î1Æü(ÅÚ) 9:50 - 10:40

8-1 (»þ´Ö: 9:50 - 10:20)
Title(Invited Speech) Exploration of Novel Non-volatile Memory Materials for Analog Computing
Author*Takashi Ando (IBM)
¥Ú¡¼¥¸pp. 51 - 54

8-2 (»þ´Ö: 10:20 - 10:40)
Âê̾ÅÅ°µ°õ²Ä¤Ë¤è¤ëTiO2Ãæ¤Î»ÀÁǶõ¹¦Ê¬ÉÛ¤ÎÊѲ½¡§Âè°ì¸¶Íý·×»»¤Ë¤è¤ëVMCO¥á¥â¥êÆÃÀ­¤Î¸¡Æ¤
Ãø¼Ô*µèÀî ÂóÌé, Ĺ߷ Ω¼ù (ÀéÍÕÂç), ÀöÊ¿ ¾»¹¸, ÇòÀÐ ¸­Æó (̾Âç), Ã滳 δ»Ë (ÀéÍÕÂç)
TitleImpact of Applied Voltages on Oxygen-vacancy Distribution in TiO2: First-principles Study of VMCO-memory Characteristics
Author*Takuya Oikawa, Riki Nagasawa (Chiba Univ.), Masaaki Araidai, Kenji Shiraishi (Nagoya Univ.), Takashi Nakayama (Chiba Univ.)
¥Ú¡¼¥¸pp. 55 - 60


[¥»¥Ã¥·¥ç¥óɽ¤Ø]

¥»¥Ã¥·¥ç¥ó 9  ¥Õ¥©¥È¥Ë¥¯¥¹
Æü»þ: 2020ǯ2·î1Æü(ÅÚ) 11:00 - 12:10

9-1 (»þ´Ö: 11:00 - 11:30)
Âê̾(¾·ÂÔ¹Ö±é) Society 5.0 »þÂå¤Ë¤ª¤±¤ë°Û¼ïºàÎÁ½¸ÀÑ¥·¥ê¥³¥ó¥Õ¥©¥È¥Ë¥¯¥¹
Ãø¼Ô*ÃÝÃæ ½¼, ¹âÌÚ ¿®°ì (ÅìÂç)
Title(Invited Speech) Heterogeneous Si Photonics for Society 5.0
Author*Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo)
¥Ú¡¼¥¸pp. 61 - 64

9-2 (»þ´Ö: 11:30 - 11:50)
Âê̾±ÕÁêÀ®Ä¹GeSn¤òÍѤ¤¤¿²£·¿pin¥À¥¤¥ª¡¼¥É¤Î¹â¸úΨ¼¼²¹¥¨¥ì¥¯¥È¥í¥ë¥ß¥Í¥Ã¥»¥ó¥¹
Ãø¼Ô*ÏÂÅÄ Íµ´õ, ºÙ°æ Âî¼£, »Ö¼ ¹Í¸ù, ÅÏÉô Ê¿»Ê (ºåÂç)
TitleHighly Efficient Room Temperature Electroluminescence from GeSn Lateral PIN Diode Fabricated by Liquid-phase Crystallization
Author*Youki Wada, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)
¥Ú¡¼¥¸pp. 65 - 68

9-3 (»þ´Ö: 11:50 - 12:10)
Âê̾ž¼Ìµ»½Ñ¤òÍѤ¤¤¿Si´ðÈľå¤ÎɽÌ̾ȼͷ¿InGaAs PhotoFET¤Î¼Â¾Ú
Ãø¼Ô*ÂçÀÐ ÏÂÌÀ (»ºÁí¸¦/ÅìµþÍý²ÊÂç), Àаæ ͵Ƿ, Ä¥ ʸ³¾, À¶¿å Å´»Ê (»ºÁí¸¦), ÀÐ°æ ´²¿Î (»ºÁí¸¦/ÅìµþÍý²ÊÂç), Æ£Âå Çîµ­, ±óÆ£ Áï (ÅìµþÍý²ÊÂç), Á°ÅÄ Ã¤Ïº (»ºÁí¸¦/ÅìµþÍý²ÊÂç)
TitleDemonstration of Front Side Illumination InGaAs PhotoFET on Si Substrate Using Transfer Technology
Author*Kazuaki Oishi (AIST/Tokyo Univ. of Science), Hiroyuki Ishii, Wen Hsin Chang, Tetsuji Shimizu (AIST), Hiroto Ishii (AIST/Tokyo Univ. of Science), Hiroki Fujishiro, Akira Endoh (Tokyo Univ. of Science), Tatsuro Maeda (AIST/Tokyo Univ. of Science)
¥Ú¡¼¥¸pp. 69 - 74


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¥»¥Ã¥·¥ç¥ó 10  ¥Ñ¥ï¡¼¥Ç¥Ð¥¤¥¹
Æü»þ: 2020ǯ2·î1Æü(ÅÚ) 13:10 - 14:40

10-1 (»þ´Ö: 13:10 - 13:40)
Âê̾(¾·ÂÔ¹Ö±é) ¥À¥¤¥ä¥â¥ó¥É¥Ç¥Ð¥¤¥¹¤ÈMOS³¦Ì̤θ½¾õ
Ãø¼Ô*¾¾ËÜ Íã, ºù°æ ³¤¶© (¶âÂôÂç), ²ÃÆ£ Ãè¸÷, ËÒÌî ½ÓÀ², ¾®ÁÒ À¯É§, ÃÝÆâ ÂçÊå (»ºÁí¸¦), »³ºê Áï, Ãö·§ ¹§É×, ÆÁÅÄ µ¬É× (¶âÂôÂç)
Title(Invited Speech) Current Status of Diamond Device and MOS Interface
Author*Tsubasa Matsumoto, Ukyo Sakurai (Kanazawa Univ.), Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi (AIST), Satoshi Yamasaki, Takao Inokuma, Norio Tokuda (Kanazawa Univ.)
¥Ú¡¼¥¸pp. 75 - 78

10-2 (»þ´Ö: 13:40 - 14:00)
Âê̾Al2O3/¦Â-Ga2O3¥¹¥¿¥Ã¥¯¹½Â¤¤ÎPMA¸ú²Ì¤È³¦ÌÌÆÃÀ­¤Î´Ø·¸
Ãø¼Ô*×¢À¥ ²í»Ë (¼Ç±º¹©Âç), À¸ÅÄÌÜ ½Ó½¨ (NIMS), Á°ÅÄ ±ÍΤ¹á (¼Ç±º¹©Âç), Âç°æ ¶Çɧ, ÃÓÅÄ Ä¾¼ù, ¿§Àî ˧¹¨, ¾®½Ð ¹¯É× (NIMS), À¶Ìî È¥ (¼Ç±º¹©Âç)
TitleRelationship between PMA Effect and Interface Characteristics of Al2O3/¦Â-Ga2O3 Stack Structure
Author*Masafumi Hirose (Shibaura Inst. of Tech.), Toshihide Nabatame (NIMS), Erika Maeda (Shibaura Inst. of Tech.), Akihiko Ohi, Naoki Ikeda, Yoshihiro Irokawa, Yasuo Koide (NIMS), Hajime Kiyono (Shibaura Inst. of Tech.)
¥Ú¡¼¥¸pp. 79 - 81

10-3 (»þ´Ö: 14:00 - 14:20)
Âê̾GaN/HfSiOx¥­¥ã¥Ñ¥·¥¿¤ÎÅŵ¤ÆÃÀ­¤ËÂФ¹¤ëHfSiOxÀä±ïËì¤ÎËì¸ü°Í¸À­
Ãø¼Ô*Á°ÅÄ ±ÍΤ¹á (¼Ç±º¹©Âç), À¸ÅÄÌÜ ½Ó½¨ (NIMS), ×¢úó ²í»Ë (¼Ç±º¹©Âç), °æ¾å ËüΤ, Âç°æ ¶Çɧ, ÃÓÅÄ Ä¾¼ù (NIMS), ±öºê ¹¨»Ê (̾Âç), À¶Ìî È¥ (¼Ç±º¹©Âç)
TitleThickness Dependence of HfSiOx Insulator on Electrical Properties of GaN/HfSiOx Capacitor
Author*Erika Maeda (Shibaura Inst. of Tech.), Toshihide Nabatame (NIMS), Masafumi Hirose (Shibaura Inst. of Tech.), Mari Inoue, Akihiko Ohi, Naoki Ikeda (NIMS), Koji Shiozaki (Nagoya Univ.), Hajime Kiyono (Shibaura Inst. of Tech.)
¥Ú¡¼¥¸pp. 83 - 86

10-4 (»þ´Ö: 14:20 - 14:40)
Âê̾GaNÇöËì¤Ë¤ª¤±¤ë¤é¤»¤óž°Ì¤ª¤è¤ÓMgÉÔ½ãʪ¤ÈÅÅ»ÒʪÀ­¤ÎÁê´Ø¡§Âè°ì¸¶Íý·×»»¤Ë´ð¤Å¤¯ÍýÏÀ²òÀÏ
Ãø¼Ô*ÃæÌî ¿ò»Ö, ¸¶Åè ÍDzð, Âç²ÏÆâ ͦÅÍ, ĹÀî ·òÂÀ, ÀöÊ¿ ¾»¹¸, ÇòÀÐ ¸­Æó, ²¡»³ ½ß (̾Âç), Áð¾ì ¾´ (³Ø½¬±¡Âç), ´¨Àî µÁ͵ (¶åÂç), ÅÄÃæ ÆØÇ·, ËÜÅÄ Á±±û, Å·Ìî ¹À (̾Âç)
TitleTheoretical Study on Relationship between Screw Dislocation with Mg Impurities and Electronic Property in GaN Thin Films
Author*Takashi Nakano, Yosuke Harashima, Yuto Ohkawachi, Kenta Chokawa, Masaaki Araidai, Kenji Shiraishi, Atsushi Oshiyama (Nagoya Univ.), Akira Kusaba (Gakushuin Univ.), Yoshihiro Kangawa (Kyushu Univ.), Atsushi Tanaka, Yoshio Honda, Hiroshi Amano (Nagoya Univ.)
¥Ú¡¼¥¸pp. 87 - 92


[¥»¥Ã¥·¥ç¥óɽ¤Ø]

¥»¥Ã¥·¥ç¥ó 11  ɾ²Á
Æü»þ: 2020ǯ2·î1Æü(ÅÚ) 15:00 - 16:00

11-1 (»þ´Ö: 15:00 - 15:20)
Âê̾NAP-HARPES¤Ë¤è¤ë¥²¡¼¥ÈÀÑÁØÇöË쳦ÌÌ¿¼¤µÊý¸þ¥×¥í¥Õ¥¡¥¤¥ë¤ÎÆ°Âַ׬ˡ¤Î³«È¯
Ãø¼Ô*Ë­ÅÄ ÃÒ»Ë (ÅìËÌÂç), »³ËÜ Ãμù (ʼ¸Ë¸©Î©Âç), µÈ¼ ¿¿»Ë (¥¹¥×¥ê¥ó¥°¥¨¥¤¥È¥µ¡¼¥Ó¥¹), ½»ÅÄ ¹°Í´, »°º¬À¸ ¿¸ (¥Þ¥Ä¥À), Ä®ÅÄ ²íÉð (¥·¥¨¥ó¥¿¥ª¥ß¥¯¥í¥ó), µÈ±Û ¾Ïδ (¸¶»ÒÎϵ¡¹½), µÈÀî ¾´ (ÅìËÌÂç), ÎëÌÚ Å¯, ²£»³ ÏÂ»Ê (ʼ¸Ë¸©Î©Âç)
TitleDeveloping Dynamic Measurement Techniques for Depth Profiles of Gate Stacked Film Interfaces by NAP-HARPES (NAP-HARPES: Near Ambient Pressure Hard X-ray Angle-Resolved PhotoEmission Spectroscopy)
Author*Satoshi Toyoda (Tohoku Univ.), Tomoki Yamamoto (Univ. of Hyogo), Masashi Yoshimura (SPring-8 Service), Hirosuke Sumida, Susumu Mineoi (Mazda), Masatake Machida (Scienta Omicron), Akitaka Yoshigoe (JAEA), Akira Yoshikawa (Tohoku Univ.), Satoru Suzuki, Kazushi Yokoyama (Univ. of Hyogo)
¥Ú¡¼¥¸pp. 93 - 96

11-2 (»þ´Ö: 15:20 - 15:40)
Âê̾SiC p¥Á¥ã¥Í¥ëMOSFET¤ÎÀµ¹¦Í¢Á÷µ¡¹½¤Î²òÀÏ
Ãø¼Ô*²¬ËÜ Âç, ¼þ À±±ê, Ä¥ °°Ë§ (ÃÞÇÈÂç), À÷ë Ëþ, ²¬ËÜ ¸÷±û, È«»³ ůÉ×, ¸¶ÅÄ ¿®²ð (»ºÁí¸¦), ´ä¼¼ ·û¹¬, ÌðÌî ͵»Ê (ÃÞÇÈÂç)
TitleAnalysis of Hole Transport Mechanisms in p-Channel SiC MOSFETs
Author*Dai Okamoto, Xingyan Zhou, Xufang Zhang (Univ. of Tsukuba), Mitsuru Sometani, Mitsuo Okamoto, Tetsuo Hatakeyama, Shinsuke Harada (AIST), Noriyuki Iwamuro, Hiroshi Yano (Univ. of Tsukuba)
¥Ú¡¼¥¸pp. 97 - 100

11-3 (»þ´Ö: 15:40 - 16:00)
Âê̾¥·¥ê¥³¥óȿžÁØ¥Á¥ã¥Í¥ëÃæ¤Î²ÁÅŻҤÎÌÌÆâÍ­¸ú¼ÁÎÌ
Ãø¼Ô*ÉðÅÄ ¤µ¤¯¤é, ¹¾ÇÈ¸Í Ã£ºÈ (NAIST), Artoni K. R. Ang (̾¹©Âç), ºäÅÄ ÃÒ͵ (Åì¥ì), ÂçÌç ´² (Ë­ÅÄÍý¸¦), Çòß· Űϯ (»ºÁí¸¦), ¹â¶¶ ÉÒÃË (³Ø·ÝÂç), °ð²¬ µ£ (ΰµåÂç)
TitleIn-plane Effective Masses of Valence Electrons in Si Inversion Layer Channels
Author*Sakura N. Takeda, Tatsuya Ebato (NAIST), Artoni K. R. Ang (Nagoya Inst. of Tech.), Tomohiro Sakata (Toray Research Center), Hiroshi Daimon (Toyota Riken), Tetsuro Shirasawa (AIST), Toshio Takahashi (Tokyo Gakugei Univ.), Takeshi Inaoka (Univ. of the Ryukyus)
¥Ú¡¼¥¸pp. 101 - 104



2020ǯ1·î31Æü(¶â)

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Æü»þ: 2020ǯ1·î31Æü(¶â) 19:30 - 21:30

P-1
Âê̾LiNbO3¤Î¶ËÀ­¤ª¤è¤Ó¾ÇÅŸú²Ì¤Ë¤è¤ëZnO¤ÎÅŵ¤ÆÃÀ­À©¸æ¤Î¸¡Æ¤
Ãø¼Ô*°Â¸¶ ͺÂç (ÌÀÂç), ·ªÅç °ìÆÁ, Ãεþ ˭͵ (NIMS), ¾®Ìº ¸ü»Ö (ÌÀÂç), ĹÅÄ µ®¹° (NIMS)
TitleStudy on Electrical Property Control of ZnO by Polarity and Pyroelectricity of LiNbO3
Author*Yudai Yasuhara (Meiji Univ.), Kazunori Kurishima, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.), Takahiro Nagata (NIMS)
¥Ú¡¼¥¸pp. 105 - 108

P-2
TitlePolarization Measurement of Sputter-Deposited AlScN Ferroelectric Capacitors
Author*SungLin Tsai, Kazuki Kusafuka, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima (Tokyo Inst. of Tech.)
¥Ú¡¼¥¸pp. 109 - 111

P-3
TitleFerroelectric Properties of Atomic Layer Deposited Y-doped HfO2 upon Thermal Treatments
Author*Yu Wei Lin, Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima (Tokyo Inst. of Tech.)
¥Ú¡¼¥¸pp. 113 - 115

P-4
Âê̾¿·ë¾½Si1-x-yGexSny»°¸µº®¾½ÇöËì¤ÎÇ®ÅÅÆÃÀ­À©¸æ
Ãø¼Ô*ÃæÄÍ Íý, ×Å ±Ñ (̾Âç), ÉÄ é², ¹â Û¿, 刘 Äè±í (·ËÎÓÅŻҲʵ»Âç), ¹õß· ¾»»Ö (̾Âç), ºâËþ ï¯ÌÀ (̾¾ëÂç)
TitleControl of Thermoelectronic Performance of Polycrystalline Si1-x-yGexSny Ternary Alloy Thin Films
Author*Osamu Nakatsuka, Ying Peng (Nagoya Univ.), Lei Miao, Jie Gao, Chengyan Liu (Guilin Univ. of Electronic Technology), Masashi Kurosawa (Nagoya Univ.), Shigeaki Zaima (Meijo Univ.)
¥Ú¡¼¥¸pp. 117 - 120

P-5
Âê̾¥Õ¥é¥Ã¥·¥å¥é¥ó¥×¥¢¥Ë¡¼¥ëË¡¤òÍѤ¤¤¿GOI´ðÈľå¸ÇÁêÀ®Ä¹GeSn n-MOSFETs¤ÎºîÀ½
Ãø¼Ô*²¬ Çî»Ë, ¿åÎÓ ÏË, ¿¹ µ®ÍÎ, ÀÐÀî ͳµª (»ºÁí¸¦), ºÙ°æ Âî¼£, »Ö¼ ¹Í¸ù, ÅÏÉô Ê¿»Ê (ºåÂç), ±óÆ£ ÏÂɧ (»ºÁí¸¦)
TitleSolid-phase Grown GeSn n-MOSFETs on GOI Wafer Fabricated by Flash Lamp Annealing
Author*Hiroshi Oka, Wataru Mizubayashi, Takahiro Mori, Yuki Ishikawa (AIST), Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.), Kazuhiko Endo (AIST)
¥Ú¡¼¥¸pp. 121 - 124

P-6
Âê̾ʬ»ÒÀþ¥¨¥Ô¥¿¥­¥·¡¼Ë¡¤Ë¤è¤ëSi1-xSnxÇöËì¤Î·ÁÀ®
Ãø¼Ô*ð²¼ ζ»Ö, ¹õß· ¾»»Ö, ÃæÄÍ Íý (̾Âç)
TitleFormation of Si1-xSnx Thin-Film by Molecular Beam Epitaxy
Author*Ryuji Tange, Masashi Kurosawa, Osamu Nakatsuka (Nagoya Univ.)
¥Ú¡¼¥¸pp. 125 - 128

P-7
Âê̾¼¼²¹¤Ç¤Î¶ËÇö¶â°Ëì»À²½Ë¡¤Ë¤è¤ë´ðÈÄ»À²½¤òÍÞÀ©¤·¤¿ÎɼÁ¤ÊAl2O3/4H-SiC³¦Ì̤μ¸½
Ãø¼Ô*ÅÚ°æ ÂóÇÏ, ¼Æ»³ ÌÐµ× (̾Âç), ÃÝÆâ ϲÎÆà (°¦Ãι©Âç), ºä²¼ ËþÃË, ÅIJ¬ µªÇ· (̾Âç), À¶¿å »°Áï (»ºÁí¸¦¡¦Ì¾ÂçGaN-OIL), ÃæÄÍ Íý (̾Âç)
TitleRealization of Superior Al2O3/4H-SiC Interface with Suppressing Substrate Oxidation by Ultrathin Metal Layer Oxidation at Room Temperature
Author*Takuma Doi, Shigehisa Shibayama (Nagoya Univ.), Wakana Takeuchi (Aichi Inst. of Tech.), Mitsuo Sakashita, Noriyuki Taoka (Nagoya Univ.), Mitsuaki Shimizu (AIST-NU GaN-OIL), Osamu Nakatsuka (Nagoya Univ.)
¥Ú¡¼¥¸pp. 129 - 132

P-8
Âê̾Äã²¹¥×¥í¥»¥¹¤Ë¤è¤ë¶â°/4H-SiC¥³¥ó¥¿¥¯¥È¤Î¥·¥ç¥Ã¥È¥­¡¼¾ãÊɹ⤵À©¸æ¼êË¡¤Î¸¡Æ¤
Ãø¼Ô*¼Æ»³ Ìе×, ¶¶ËÜ ·òÂÀϺ, ÅÚ°æ ÂóÇÏ, ÃæÄÍ Íý (̾Âç)
TitleExamination of Controlling Schottky Barrier Height of Metal/4H-SiC Contact Using Low Temperature Process
Author*Shigehisa Shibayama, Kentaro Hashimoto, Takuma Doi, Osamu Nakatsuka (Nagoya Univ.)
¥Ú¡¼¥¸pp. 133 - 136

P-9
Âê̾
Ãø¼Ô*»ûÈø Ë­, ÄÔ ±ÑÆÁ (ÉÙ»ÎÅŵ¡), ºÙ°æ Âî¼£ (ºåÂç), Ä¥ °°Ë§, ÌðÌî ͵»Ê (ÃÞÇÈÂç), »Ö¼ ¹Í¸ù, ÅÏÉô Ê¿»Ê (ºåÂç)
TitleThe Role of Oxygen Ambient Anneal for Ba-incorporated SiO2/SiC Interface
Author*Yutaka Terao, Hidenori Tsuji (Fuji Electric), Takuji Hosoi (Osaka Univ.), Xufang Zhang, Hiroshi Yano (Univ. of Tsukuba), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)
¥Ú¡¼¥¸pp. 137 - 139

P-10
Âê̾SiC CÌ̾åÇ®»À²½Ëì¤ÎÌ©ÅÙʬÉÛ
Ãø¼Ô*ÈÓ²¬ ¶Ç, Ï¡¾Â δ (ÃÞÇÈÂç)
TitleDensity Distribution of Thermal Oxide Films on SiC (000-1)
Author*Satoru Iioka, Ryu Hasunuma (Univ. of Tsukuba)
¥Ú¡¼¥¸pp. 141 - 144

P-11
Âê̾SiC¾åÇ®»À²½Ëì¤Ë¤ª¤±¤ë¥¨¥Ã¥Á¥ó¥°¥ì¡¼¥È¤Î»°¼¡¸µÊ¬ÉÛ
Ãø¼Ô*¾®ÃÓ ¿¿¹°, Ï¡¾Â δ (ÃÞÇÈÂç)
TitleThree-Dimensional Distribution of Etching Rate of Thermal Oxide Film on SiC
Author*Masahiro Koike, Ryu Hasunuma (Univ. of Tsukuba)
¥Ú¡¼¥¸pp. 145 - 147

P-12
Âê̾ƼÇÛÀþ¤Î²¹Åپ徺¤ËµÚ¤Ü¤¹³¦ÌÌÇ®Äñ¹³¤Î±Æ¶Á
Ãø¼Ô*¥¸¥ã¥ó Å·Âî, ¿¥ÅÄ ³¤ÅÍ, ÇÏ ¿ãů, ÉÙÅÄ ´ð͵, Éðß· ¹¨¼ù, ÌÜºê ¹ÒÊ¿ (ÁáÂç), ¸â ɧ¼ô, ½ù °ìÉÌ (NIMS), ¾¾Àî µ® (»ºÁí¸¦), ¾¾ÌÚ Éðͺ, ÅÏîµ ¹§¿® (ÁáÂç)
TitleImpact of Thermal Boundary Resistance on Temperature Rise of Cu Interconnects
Author*Tianzhou Zhan, Kaito Oda, Shuaizhe Ma, Motohiro Tomita, Hiroki Takezawa, Kohei Mesaki (Waseda Univ.), Yen-ju Wu, Yibin Xu (NIMS), Takashi Matsukawa, Takeo Matsuki (AIST), Takanobu Watanabe (Waseda Univ.)
¥Ú¡¼¥¸pp. 149 - 152

P-13
Âê̾¥×¥ì¡¼¥Ê·¿Si¥Ê¥Î¥ï¥¤¥äÇ®ÅťǥХ¤¥¹¤ÎÇÛÀþ¹½Â¤Àß·×
Ãø¼Ô*¿¥ÅÄ ³¤ÅÍ, °ÂÉô ¹î´ð, ÉÙÅÄ ´ð͵ (ÁáÂç), ¾¾Àî µ®, ¾¾ÌÚ Éðͺ (»ºÁí¸¦), ÅÏîµ ¹§¿® (ÁáÂç)
TitleInterconnect Structure Engineering of Planar Si-nanowire Thermoelectric Generator
Author*Kaito Oda, Katsuki Abe, Motohiro Tomita (Waseda Univ.), Takashi Matsukawa, Takeo Matsuki (AIST), Takanobu Watanabe (Waseda Univ.)
¥Ú¡¼¥¸pp. 153 - 156

P-14
Âê̾Àä±ïËìËä¤á¹þ¤ßSi-NW¤òÍѤ¤¤¿Ç®ÅťǥХ¤¥¹¤Ë¤ª¤±¤ëSi-NW´Öµ÷Î¥¤¬È¯ÅÅÀ­Ç½¤ËµÚ¤Ü¤¹±Æ¶Á
Ãø¼Ô*ÅÄîµ ºé²Ú, ¿¥ÅÄ ³¤ÅÍ, Éðß· ¹¨¼ù, ÌÜºê ¹ÒÊ¿, ÉÙÅÄ ´ð͵ (ÁáÂç), ¾¾ÌÚ Éðͺ, ¾¾Àî µ® (»ºÁí¸¦), ÅÏîµ ¹§¿® (ÁáÂç)
TitleEffect of Si-Nanowire Inter-space on the Performance of Si-Nanowire Thermoelectric Generator Embedding in Dielectric Film
Author*Sakika Tanabe, Kaito Oda, Hiroki Takezawa, Kohei Mesaki, Motohiro Tomita (Waseda Univ.), Takeo Matsuki, Takashi Matsukawa (AIST), Takanobu Watanabe (Waseda Univ.)
¥Ú¡¼¥¸pp. 157 - 160

P-15
TitleThermoelectric Enhancement of Silicon Nanowire Thermoelectric Generator Based on Thermally Conductive Multilayers
Author*Zhicheng Jin, Tianzhuo Zhan, Shuaizhe Ma, Hiroki Takezawa, Kohei Mesaki, Shuhei Hirao, Motohiro Tomita (Waseda Univ.), Yen-Ju Wu, Yibin Xu (NIMS), Takashi Matsukawa, Takeo Matsuki (AIST), Takanobu Watanabe (Waseda Univ.)
¥Ú¡¼¥¸pp. 161 - 164

P-16
Âê̾GaN¤ÎɽÌ̥ݥƥ󥷥ã¥ëÍɤ餮¤¬MOSFET¤Î¥­¥ã¥ê¥¢°ÜÆ°Å٤˵ڤܤ¹±Æ¶Á
Ãø¼Ô*ÅIJ¬ µªÇ· (̾Âç), »³ÅÄ ¼÷°ì, À¶¿å »°Áï (»ºÁí¸¦-̾ÂçGaN-OIL)
TitleImpacts of Surface Potential Fluctuation of GaN on Carrier Mobility in an Inversion Layer
Author*Noriyuki Taoka (Nagoya Univ.), Toshikazu Yamada, Mitsuaki Shimizu (AIST-NU GaN-OIL)
¥Ú¡¼¥¸pp. 165 - 168

P-17
Âê̾¥Ñ¥ï¡¼IC¤Ë¸þ¤±¤¿n- ¤ª¤è¤Óp-¥Á¥ã¥ó¥Í¥ëGaN MOSFET¤ÎÆ°ºî¼Â¾Ú
Ãø¼ÔNguyen Huu Trung (»ºÁí¸¦-̾ÂçGaN-OIL), *ÅIJ¬ µªÇ· (̾Âç), »³ÅÄ ±Ê, ¹â¶¶ ¸À½ï, »³ÅÄ ¼÷°ì, À¶¿å »°Áï (»ºÁí¸¦-̾ÂçGaN-OIL)
TitleFirst Experimental Demonstration of n- and p-GaN MOSFETs Operation
AuthorNguyen Huu Trung (AIST-NU GaN-OIL), *Noriyuki Taoka (Nagoya Univ.), Hisashi Yamada, Tokio Takahashi, Toshikazu Yamada, Mitsuaki Shimizu (AIST-NU GaN-OIL)
¥Ú¡¼¥¸pp. 169 - 172

P-18
Âê̾µ¤ÁêÈ¿±þ¤Î´ÑÅÀ¤«¤é¸«¤¿GaN MOVPEÃæ¤ÎúÁǺ®Æþ¤Î¸¶°ø¤Î²òÌÀ
Ãø¼Ô*Âç²ÏÆâ ͦÅÍ, ĹÀî ·òÂÀ, ÀöÊ¿ ¾»¹¸ (̾Âç), Áð¾ì ¾´ (³Ø½¬±¡Âç), ´¨Àî µÁ͵ (̾¸Å²°Âç/¶å½£Âç), ³ÁËÜ ¹À°ì (¶åÂç), ³ð Àµ, ¿·ÅÄ ½£¸ã, ËÜÅÄ Á±±û, Å·Ìî ¹À, ÇòÀÐ ¸­Æó (̾Âç)
TitleStudy of the Cause of Carbon Incorporation in GaN MOVPE from the Viewpoint of Gas Phase Reaction
Author*Yuto Okawachi, Kenta Chokawa, Masaaki Araidai (Nagoya Univ.), Akira Kusaba (Gakushuin Univ.), Yoshihiro Kangawa (Nagoya Univ./Kyushu Univ.), Koichi Kakimoto (Kyushu Univ.), Zheng Ye, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Kenji Shiraishi (Nagoya Univ.)
¥Ú¡¼¥¸pp. 173 - 177

P-19
Âê̾¥Ú¥í¥Ö¥¹¥«¥¤¥ÈȾƳÂΤθ÷µÛ¼ý¥¹¥Ú¥¯¥È¥ë¤ÎÂè°ì¸¶Íý·×»»¡§GaAs¤È¤ÎÈæ³Ó
Ãø¼Ô*½é¼¯ ½ãÆà, ÀÐÀî ¿¿¿Í, Ã滳 δ»Ë (ÀéÍÕÂç)
TitleFirst-principles Calculation of Photo-absorption Spectra of Perovskite Semiconductors; Comparison to GaAs
Author*Junna Hatsushika, Masato Ishikawa, Takashi Nakayama (Chiba Univ.)
¥Ú¡¼¥¸pp. 179 - 182

P-20
Âê̾Âè°ì¸¶Íý·×»»¤Ë¤è¤ëȾƳÂΤȶâ°¤ÎÎ̻Ҳ½¤Ë¤è¤ëÍ­¸ú¼ÁÎÌÁýÂç¤Îɾ²Á
Ãø¼Ô*Æî ¶½, ÉðÅÄ ¤µ¤¯¤é (NAIST)
TitleEvaluation of Effective Mass Enhancement Due to Quantization by First Principles Calculation
Author*Ko Minami, Sakura N. Takeda (NAIST)
¥Ú¡¼¥¸pp. 183 - 185

P-21
Âê̾XPS¤Ë¤è¤ëSi·ÏºàÎÁ¤ÎÊ£ÁÇͶÅÅ´Ø¿ô¡¦¸÷³ØÄê¿ô¤Îɾ²Á
Ãø¼Ô*ÂçÅÄ ¹¸À¸, ÅIJ¬ µªÇ·, ÃÓÅÄ Ìï±û, ËÒ¸¶ ¹îŵ, µÜùõ À¿°ì (̾Âç)
TitleEvaluation of Complex Dielectric Function of Si-based Materials from XPS Measurements
Author*Akio Ohta, Noriyuki Taoka, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)
¥Ú¡¼¥¸pp. 187 - 192

P-22
Âê̾ʷ°Ïµ¤À©¸æÆðXÀþ¸÷ÅÅ»Òʬ¸÷¤Ë¤è¤ëAuÇöËì/Si´ðÈij¦ÌÌÈ¿±þ¤ÎưŪ´Ñ»¡
Ãø¼Ô*Ë­ÅÄ ÃÒ»Ë (ÅìËÌÂç), »³ËÜ Ãμù (ʼ¸Ë¸©Î©Âç), À¾ ÀŲÂ, ²¼½Ð ľ¹¬ (¸¶»ÒÎϵ¡¹½), µÈ¼ ¿¿»Ë (¥¹¥×¥ê¥ó¥°¥¨¥¤¥È¥µ¡¼¥Ó¥¹), ½»ÅÄ ¹°Í´, »°º¬À¸ ¿¸ (¥Þ¥Ä¥À), Ä®ÅÄ ²íÉð (¥·¥¨¥ó¥¿¥ª¥ß¥¯¥í¥ó), ÎëÌÚ Å¯, ²£»³ ÏÂ»Ê (ʼ¸Ë¸©Î©Âç), µÈÀî ¾´ (ÅìËÌÂç), ÉÙ±Ê °¡´õ, µÈ±Û ¾Ïδ (¸¶»ÒÎϵ¡¹½)
TitleDynamic Observation of Interfacial Reactions at the Au Film/Si Substrate by Ambient-Controlled Soft X-ray Photoemission Spectroscopy
Author*Satoshi Toyoda (Tohoku Univ.), Tomoki Yamamoto (Univ. of Hyogo), Shizuka Nishi, Naoyuki Shimode (JAEA), Masashi Yoshimura (SPring-8 Service), Hirosuke Sumida, Susumu Mineoi (Mazda), Masatake Machida (Scienta Omicron), Satoru Suzuki, Kazushi Yokoyama (Univ. of Hyogo), Akira Yoshikawa (Tohoku Univ.), Aki Tominaga, Akitaka Yoshigoe (JAEA)
¥Ú¡¼¥¸pp. 193 - 196

P-23
Âê̾¶â°/ȾƳÂγ¦Ì̤Υ·¥ç¥Ã¥È¥­¡¼¥Ð¥ê¥¢¤ËÂФ¹¤ë³¦ÌÌÀÜ¿¨Å٤θú²Ì¡§Âè°ì¸¶Íý·×»»¤Ë´ð¤Å¤¯¸¡Æ¤
Ãø¼Ô*¿¢ÅÄ ²ÆÍÕ, Ã滳 δ»Ë (ÀéÍÕÂç)
TitleEffects of Contactness on Schottky Barrier at Metal/semiconductor Interfaces; First-principles Study
Author*Kayo Ueda, Takashi Nakayama (Chiba Univ.)
¥Ú¡¼¥¸pp. 197 - 200