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2019 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY
Technical Program

Remark: The presenter of each paper is marked with "*".
Author Index:   HERE

Session Schedule

Monday, November 18, 2019

Social Program: TSUBAME tour
11:00 - 12:00
Registration
12:00 -
Opening Address
13:00 - 13:10
K1  Keynote
13:10 - 15:10
Photo
15:10 - 15:20
Break
15:20 - 15:40
S1  Process & Characterization
15:40 - 17:00
Break
17:00 - 17:10
P  Poster Session
17:10 - 19:10
Tuesday, November 19, 2019

S2  Memory 1
9:30 - 10:20
Break
10:20 - 10:40
S3  Application of Ferroelectric Film
10:40 - 11:50
Lunch
11:50 - 13:00
S4  2D, TFT & Characterization Technique
13:00 - 14:30
Break
14:30 - 14:50
S5  Focus Session
14:50 - 17:20
Break
17:20 - 18:00
Banquet
18:00 - 20:00
Wednesday, November 20, 2019

S6  Memory 2 & Dipole Control
9:30 - 11:00
Break
11:00 - 11:20
S7  Dielectrics in SiC 1 & Dielectrics in Ge
11:20 - 12:30
Lunch
12:30 - 13:40
S8  Dielectrics in SiC 2
13:30 - 14:20
Break
14:20 - 14:40
S9  Dielectrics in GaN
14:40 - 15:50
A  Award Ceremony
15:50 - 16:00
C  Closing
16:00 - 16:10


List of papers

Remark: The presenter of each paper is marked with "*".

Monday, November 18, 2019

[To Session Table]

Session K1  Keynote
Time: 13:10 - 15:10 Monday, November 18, 2019
Chairs: Hiroshi Nohira (Tokyo City Univ., Japan), Hiroyuki Kageshima (Shimane Univ., Japan)

K1-1 (Time: 13:10 - 14:10)
Title(Keynote Address) Facts and Myths of Dielectric Breakdown Processes
Author*Ernest Y. Wu (IBM Research, USA)

K1-2 (Time: 14:10 - 15:10)
Title(Keynote Address) Importance of Semiconductor MOS Interface Control on Advanced Electron Devices
Author*Shinichi Takagi, T.-E. Lee, M. Ke, S.-H. Yoon, D.-H. Ahn, K. Kato, K. Toprasertpong, M. Takenaka (Univ. of Tokyo, Japan)


[To Session Table]

Session S1  Process & Characterization
Time: 15:40 - 17:00 Monday, November 18, 2019
Chairs: Kazuo Tsutsui (Tokyo Inst. of Tech., Japan), K. S. Chang-Liao (National Tsing Hua Univ., Taiwan)

S1-1 (Time: 15:40 - 16:00)
TitleCharacterization of Dynamic Behaviors of Carrier Traps in Silicon Nitride Films Created by Ar and He Plasma Exposures
Author*Tomohiro Kuyama, Keiichiro Urabe, Koji Eriguchi (Kyoto Univ., Japan)

S1-2 (Time: 16:00 - 16:20)
TitleEvaluation of Reactive Ion Etching-induced Damage on 2DEG at AlGaN/GaN Interface
Author*Mikito Nozaki, Daiki Terashima (Osaka Univ., Japan), Akitaka Yoshigoe (Japan Atomic Energy Agency, Japan), Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan)

S1-3 (Time: 16:20 - 16:40)
TitleEffects of ZrON and CF4 Plasma Treatment in Gate Stack on Electrical Characteristics of FinFETs
Author*Ying-Zhuang Chien, Kuei-Shu Chang-Liao, Yan-Lin Li, Dun-Bao Ruan, Shang-Hua Hsu, Kuan-Yu Lai, Bo-Xun Lu (National Tsing Hua Univ., Taiwan)

S1-4 (Time: 16:40 - 17:00)
TitleComplex Dielectric Function of Si Oxide as Evaluated from Photoemission Measurements
Author*Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ., Japan)


[To Session Table]

Session P  Poster Session
Time: 17:10 - 19:10 Monday, November 18, 2019
Chair: Hiroyuki Kageshima (Shimane Univ., Japan)

P-1
TitleAnalog Behavior of HfO2 Charge Trap Memory for Artificial Synapse
Author*Taiho Yoshinaka, Hisato Ohnishi, Yasuo Nara (Univ. of Hyogo, Japan)

P-2
TitleCharge Storage Mechanism of the Potassium Ion Electret Used for Future Energy Harvesting Devices
Author*Toru Nakanishi, Takeshi Miyajima, Masaaki Araidai, Kenji Shiraishi (Nagoya Univ., Japan)

P-3
TitleFabrication of GaOx Based Crossbar Array Memristive Devices and Their Resistive Switching Properties
Author*Mamoru Joko, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai (Osaka Univ., Japan)

P-4
TitleEffect of Embedding in Dielectric Film on the Performance of Si-Nanowire Thermoelectric Generator
Author*Sakika Tanabe, Kaito Oda, Hiroki Takezawa, Kohei Mesaki, Motohiro Tomita (Waseda Univ., Japan), Takeo Matsuki, Takashi Matsukawa (AIST, Japan), Takanobu Watanabe (Waseda Univ., Japan)

P-5
TitleElectrical Characteristics of Atomic Layer Deposited Y-silicate Dielectrics
Author*Jinhan Song, Atsuhiro Ohta, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima (Tokyo Inst. of Tech., Japan)

P-6
TitleEffect of Nb2O5 Doping on Low Frequency Properties of Li2SnO3 Ceramics
AuthorYung-Yu Chen, *Jian-Hao Jiang (Lunghwa Univ. of Science and Tech., Taiwan)

P-7
TitlePressure and SiO cooperative effect on diffusivity in Si oxide
AuthorYuji Yajima (Shimane Univ., Japan), Kenji Shiraishi (Nagoya Univ., Japan), Tetsuo Endoh (Tohoku Univ., Japan), *Hiroyuki Kageshima (Shimane Univ., Japan)

P-8
TitleGrowth of bismuth-based oxide dielectric thin films using atomic layer deposition
Author*Xinyu Teng, Shanghao Zha, Mitsuhiro Hirabayashi, Naoki Shimosako, Hiroshi Uchida, Hiroshi Sakama (Sophia Univ., Japan)

P-9
TitlePulse deposition of Y2O3 films by Y(iPrCp)3 assisted by Ar boost technology
Author*YuWei Lin, Jinhan Song, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima (Tokyo Inst. of Tech., Japan)

P-10
TitleITO Thin Films Fabricated by Hybrid Facing Cathode Sputtering Using DC-RF Coupled Power: Realization of Ultra Low Sputtering Voltage
Author*Shinichi Morohashi (Yamaguchi Univ., Japan)

P-11
TitleExperimental Study of Low-temperature Oxidation of SiGe by Ozone
Author*Xueli Ma, Xiaolei Wang, Wenwu Wang (Chinese Academy of Sciences, China)

P-12
TitleDensity profile of thermal SiO2 films on 4H-SiC (000-1)
Author*Satoru Iioka, Ryu Hasunuma (Univ. of Tsukuba, Japan)

P-13
TitleEffect of Thermal Boundary Resistance at Metal/Dielectric Interfaces on Output Power in Silicon Nanowire Thermoelectric Generator
Author*Tianzhuo Zhan, Kaito Oda, Shuaizhe Ma, Hiroki Takezawa, Kohei Mesaki, Motohiro Tomita (Waseda Univ., Japan), Yen-ju Wu, Yibin Xu (NIMS, Japan), Takashi Matsukawa, Takeo Matsuki (AIST, Japan), Takanobu Watanabe (Waseda Univ., Japan)

P-14
TitleXPS Study on Film Thickness Dependence of Surface Charge-up and Resistance of SiO2 Films on Si
Author*Kota Ushimaru, Takahiro Harie (Waseda Univ./JAXA, Japan), Daisuke Kobayashi (JAXA, Japan), Tomoyuki Yamamoto (Waseda Univ., Japan), Kazuyuki Hirose (Waseda Univ./JAXA, Japan)

P-15
TitleCharacterization of Fast Relaxation by Oxide-trapped Charges under BTI stress on 64-nm HfSiON/SiO2 MOSFETs
Author*Hyeokjin Kim, Giyoun Roh (POSTECH, Republic of Korea), Seonhaeng Lee (SK Hynix, Republic of Korea), Bongkoo Kang (POSTECH, Republic of Korea)

P-16
TitleUnder-gate-dipole-controlled current conduction in high-permittivity insulators
Author*Atsushi Hiraiwa, Satoshi Okubo, Kiyotaka Horikawa, Hiroshi Kawarada (Waseda Univ., Japan)

P-17
TitlePreparation of Ferroelectric Yttrium-doped Hafnium-Zirconium Dioxide Thin Films By Solution Process.
Author*Mohit, Ken-ichi Haga, Eisuke Tokumitsu (JAIST, Japan)

P-19
TitleCharacterization of Interface Trap Density of High-k Gate Stack by Low-Temperature Ambient-Controlled Flash Lamp Annealing
Author*Kodai Shuto, Taiho Yoshinaka, Ryo Hashimoto (Univ. of Hyogo, Japan), Hikaru Kawarazaki, Takayuki Aoyama, Shinichi Kato (SCREEN Semiconductor Solutions Co., Japan), Yasuo Nara (Univ. of Hyogo, Japan)

P-20
TitleInfluence of Silicon Wafer Surface Roughness on Semiconductor Device Characteristics
Author*Keiichiro Mori (Tohoku Univ., Japan), Shuichi Samata, Noritomo Mitsugi (SUMCO, Japan), Akinobu Teramoto (Hiroshima Univ., Japan), Rihito Kuroda, Tomoyuki Suwa, Keiichi Hashimoto, Shigetoshi Sugawa (Tohoku Univ., Japan)

P-21
TitleElectron Mobility in Si Nanowire Considering Nonlinear Surface Roughness Scattering Model
Author*Jiahui Duan, Xiaolei Wang, Lixing Zhou, Xueli Ma, Jinjuan Xiang, Wenwu Wang (Chinese Academy of Sciences, China)

P-22
TitleSynchrotron Radiation Photoelectron Spectroscopy Study on Oxides Formed at Ge(100)2×1 Surface in Atmosphere
Author*Akitaka Yoshigoe (Japan Atomic Energy Agency, Materials Sciences Research Center, Japan)

P-23
TitleAngle-resolved Hard X-ray Photoelectron Spectroscopy Study of ICP etching Damage Layer on Diamond Surface
Author*Reito Wada, Kohei Takizawa (Tokyo City Univ., Japan), Yukako Kato, Masahiko Ogura, Toshiharu Makino, Satoshi Yamasaki (AIST, Japan), Hiroshi Nohira (Tokyo City Univ., Japan)

P-24
TitleInvestigation on Universality of Hot-Carrier Induced Degradation in High-Voltage MOS Transistors
Author*Jone F. Chen, Ming-Ju Sun (National Cheng Kung Univ., Taiwan), Hao-Tang Hsu, Hann-Ping Hwang (Powerchip Semiconductor Manufacturing, Taiwan)

P-25
TitleAnalysis of Positive Bias Temperature Instability Degradation in n+ and p+ poly-Si Gates of High-Voltage SiO2 Dielectric nMOSFETs
Author*Yeohyeok Yun (POSTECH, Republic of Korea), Ji-Hoon Seo (Samsung Electronics, Republic of Korea), Bongkoo Kang (POSTECH, Republic of Korea)

P-26
TitleChannel-length Dependence of the Generation of Interface States and Oxide-trapped Charges on Drain Avalanche Hot Carrier Degradation of HfSiON/SiO2 p-channel MOSFETs with Strained Si/SiGe Channel
Author*Hyeokjin Kim, Giyoun Roh (POSTECH, Republic of Korea), Seonhaeng Lee (SK Hynix, Republic of Korea), Bongkoo Kang (POSTECH, Republic of Korea)

P-27
TitleInsight into Ga Diffusion in SiO2 Dielectric Layer and Process Design for Improved Reliability of GaN-based MOS Devices
Author*Yuhei Wada, Mikito Nozaki, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan)

P-28
TitleExperimental Optimization of Post Metal Annealing of Fully Depleted-Silicon on Insulator Tunneling Field Effect Transistor
Author*Hyun-Dong Song, Hyeong-Sub Song (Chungnam National Univ., Republic of Korea), Sunil Babu Eady (Chungnam National Univ., India), Hyun-Woong Choi, Ga-Won Lee, Hi-Deok Lee (Chungnam National Univ., Republic of Korea)

P-29
TitleNon-destructive Evaluation of Chemical Bonding States at Buried Interface using Laboratory Hard X-ray Photoelectron Spectroscopy
Author*Tappei Nishihara, Hiroki Kanai (Meiji Univ., Japan), Toshiro Okawa (Scienta Omicron, Japan), Atsushi Ogura (Meiji Univ., Japan)



Tuesday, November 19, 2019

[To Session Table]

Session S2  Memory 1
Time: 9:30 - 10:20 Tuesday, November 19, 2019
Chairs: Jiezhi Chen (Shandong Univ., China), Masao Inoue (Renesas Electronics, Japan)

S2-1 (Time: 9:30 - 10:00)
Title(Invited Paper) Ge-based Non-Volatile Memories
Author*Yi Zhao, Yi Zhang, Na Wei, Bing Chen (Zhejiang Univ., China)

S2-2 (Time: 10:00 - 10:20)
TitleImproved Erasing Speed of Poly-Si Gate-All-Around Junctionless Charge-Trapping Flash Memory Devices with ZrO2 in Stacked Trapping Layer
Author*Ping-Shun Ding, K.S. Chang-Liao, Hsin-Kai Fang, Chia-Hsin Cheng (National Tsing Hua Univ., Taiwan), Wen-Hsien Huang, Chang-Hong Shen, Jia-Min Shieh (Taiwan Semiconductor Research Institute, Taiwan)


[To Session Table]

Session S3  Application of Ferroelectric Film
Time: 10:40 - 11:50 Tuesday, November 19, 2019
Chairs: Shinji Migita (AIST, Japan), Yi Zhao (Zhejiang Univ., China)

S3-1 (Time: 10:40 - 11:10)
Title(Invited Paper) Effect of Al Nanoclusters Embedded by Sub-Monolayer Doping System on Reliability in Ferroelectric Hf0.5Zr0.5O2 Film
Author*Tadashi Yamaguchi, Kazuyuki Omori, Yasuhiro Shimada, Yorinobu Kunimune, Takashi Ide, Masao Inoue, Masazumi Matsuura (Renesas Electronics, Japan)

S3-2 (Time: 11:10 - 11:30)
TitleSwitching Parameter Dependence on Negative-capacitance Behavior of RC Circuit with Ferroelectric Capacitor
Author*Eisuke Tokumitsu (JAIST, Japan)

S3-3 (Time: 11:30 - 11:50)
TitleFerroelectric phase evolution of undoped ZrO2 thin film by wet O2 annealing process
Author*Shigehisa Shibayama, Jotaro Nagano, Mitsuo Sakashita, Osamu Nakatsuka (Nagoya Univ., Japan)


[To Session Table]

Session S4  2D, TFT & Characterization Technique
Time: 13:00 - 14:30 Tuesday, November 19, 2019
Chairs: Shu Nakaharai (NIMS, Japan), Hiroshi Ashihara (KOKUSAI ELECTRIC, Japan)

S4-1 (Time: 13:00 - 13:30)
Title(Invited Paper) Understanding interface properties in 2D heterostructure FETs
Author*Kosuke Nagashio (Univ. of Tokyo, Japan)

S4-2 (Time: 13:30 - 13:50)
TitlePositive Threshold Voltage in Accumulation Capacitance of TiN-Top-Gate/High-k/Sputtered-MoS2 Stacks
Author*Haruki Tanigawa, Kentaro Matsuura, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi (Tokyo Inst. of Tech., Japan)

S4-3 (Time: 13:50 - 14:10)
TitleCharacteristics of Oxide TFT with Amorphous Carbon-Doped In2O3 Channel Using 150 ēC Low Temperature Process with ALD and O3 Annealing
Author*Riku Kobayashi (Meiji Univ., Japan), Toshihide Nabatame, Kazunori Kurishima (NIMS, Japan), Takashi Onaya (Meiji Univ., Japan), Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi (NIMS, Japan), Atsushi Ogura (Meiji Univ., Japan)

S4-4 (Time: 14:10 - 14:30)
TitleDevelopment of Time-Division Depth-Profiling Techniques in Multi- Layered Dielectric Thin Films by using Near-Ambient-Pressure Hard X-ray Angle-Resolved Photoemission Spectroscopy
Author*Satoshi Toyoda (Tohoku Univ., Japan), Tomoki Yamamoto (Univ. of Hyogo, Japan), Masashi Yoshimura (Spring-8 Service, Japan), Hirosuke Sumida, Susumu Mineoi (Mazda Motor, Japan), Masatake Machida (Scienta Omicron, Japan), Akitaka Yoshigoe (Japan Atomic Energy Agency, Japan), Akira Yoshikawa (Tohoku Univ., Japan), Satoru Suzuki, Kazushi Yokoyama (Univ. of Hyogo, Japan)


[To Session Table]

Session S5  Focus Session
Time: 14:50 - 17:20 Tuesday, November 19, 2019
Chairs: Hiroyuki Kageshima (Shimane Univ., Japan), Yuuichiro Mitani (Toshiba, Japan)

S5-1 (Time: 14:50 - 15:20)
Title(Invited Paper) Role of stress and carrier in oxidation on Si surfaces
AuthorJaiyi Tang (Tohoku Univ., China), Yuki Sekihata, Shuichi Ogawa (Tohoku Univ., Japan), Akitaka Yoshigoe (Japan Atomic Energy Agency, Japan), *Yuji Takakuwa (Tohoku Univ., Japan)

S5-2 (Time: 15:20 - 15:50)
Title(Invited Paper) Oxidation of SiGe Alloy: Residual Order in SiO2 and Self-limiting Oxidation
Author*Takayoshi Shimura, Takuji Hosoi, Heiji Watanabe (Osaka Univ., Japan)

S5-3 (Time: 15:50 - 16:20)
Title(Invited Paper) Thermal oxidation of germanium
Author*Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo, Japan)

S5-4 (Time: 16:20 - 16:50)
Title(Invited Paper) Thermal Oxidation of SiC: Kinetics and SiO2/SiC Interface Property
Author*Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan)

S5-5 (Time: 16:50 - 17:20)
Title(Invited Paper) Native Oxides on GaN(0001) and Crystalline Intermediate Layers in Oxides/GaN(0001)
Author*Yoshihiro Irokawa (NIMS, Japan)



Wednesday, November 20, 2019

[To Session Table]

Session S6  Memory 2 & Dipole Control
Time: 9:30 - 11:00 Wednesday, November 20, 2019
Chairs: Koji Kita (Univ. of Tokyo, Japan), Wenwu Wang (Chinese Academy of Sciences, China)

S6-1 (Time: 9:30 - 10:00)
Title(Invited Paper) Emerging Memory for Data-Centric Computing
Author*Tuo-Hung Hou (National Chiao Tung Univ., Taiwan)

S6-2 (Time: 10:00 - 10:20)
TitleEffect of EOT scaling on switching operation of HfO2/SiO2-based interface dipole modulation FETs
Author*Noriyuki Miyata (AIST, Japan)

S6-3 (Time: 10:20 - 10:40)
TitleDifference of temperature effects on Al2O3/SiO2 interface dipole layer strength by SiO2 growth methods
Author*Takashi Hamaguchi, Koji Kita (Univ. of Tokyo, Japan)

S6-4 (Time: 10:40 - 11:00)
TitleDipole Reversal Induced by Phase-transition at Hetero-Oxide Interface Simulated by Molecular Dynamics
Author*Shota Kanemaru, Marc Perea Causin, Motohiro Tomita, Takanobu Watanabe (Waseda Univ., Japan)


[To Session Table]

Session S7  Dielectrics in SiC 1 & Dielectrics in Ge
Time: 11:20 - 12:30 Wednesday, November 20, 2019
Chairs: Tomoya Ono (Kobe Univ., Japan), Huo-Hung Hou (National Chiao Tung Univ., Taiwan)

S7-1 (Time: 11:20 - 11:40)
TitleNotable Difference between Rapid-Thermal and Microwave Annealings on Ge pMOSFETs
Author*Yu-Ting Kuo, Kuei-Shu Chang-Liao, Ying-Zhuang Chien, Ping-Shun Ding, Shi-Han Yi (National Tsing Hua Univ., Taiwan)

S7-2 (Time: 11:40 - 12:00)
TitleSuppression of VFB Instability of p-type 4H-SiC (0001) MOS capacitor by H2O-POA without O2 Introduction
Author*Jun Koyanagi, Koji Kita (Univ. of Tokyo, Japan)

S7-3 (Time: 12:00 - 12:20)
TitleAb Initio Calculations for the Effect of Wet Oxidation Condition on the Reaction Processes at 4H-SiC/SiO2 Interface
Author*Tsunashi Shimizu, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito (Mie Univ., Japan), Hiroyuki Kageshima (Shimane Univ., Japan), Masashi Uematsu (Keio Univ., Japan), Kenji Shiraishi (Nagoya Univ., Japan)


[To Session Table]

Session S8  Dielectrics in SiC 2
Time: 13:30 - 14:20 Wednesday, November 20, 2019
Chairs: Takuji Hosoi (Osaka Univ., Japan), Toru Akiyama (Mie Univ., Japan)

S8-1 (Time: 13:30 - 14:00)
Title(Invited Paper) SiC MOS interface: what limits the channel mobility?
Author*Hiroshi Yano (Univ. of Tsukuba, Japan)

S8-2 (Time: 14:00 - 14:20)
TitleInvestigation of Thermal Oxidation-induced Lattice Distortion at the Surface of 4H-SiC and Its Origins
AuthorAdhi Dwi Hatmanto, *Koji Kita (Univ. of Tokyo, Japan)


[To Session Table]

Session S9  Dielectrics in GaN
Time: 14:40 - 15:50 Wednesday, November 20, 2019
Chairs: Noriyuki Taoka (Nagoya Univ., Japan), Yoshihiro Sugita (Socionext, Japan)

S9-1 (Time: 14:40 - 15:00)
TitleEx-Situ Grown Low-Temperature SiNx Using Hollow Cathode Plasma-Enhanced Atomic Layer Deposition (PEALD) with Crystalline Interfacial Layer on AlGaN/GaN Substrates
Author*Sumin Hwang, Xin Meng (Univ. of Texas, Dallas, USA), Si Joon Kim (Kangwon National Univ., Republic of Korea), Arul V. Ravichandran, Antonio T. Lucero (Univ. of Texas, Dallas, USA), Jaegab Lee (Kookmin Univ., Republic of Korea), Byung Keun Hwang (Dow Chemical Company, Republic of Korea), Jiyoung Kim (Univ. of Texas, Dallas, USA)

S9-2 (Time: 15:00 - 15:20)
TitleInfluence of post-metallization annealing on the characteristics of Pt/Al2O3/n-β-Ga2O3 capacitors after post-deposition annealing
Author*Masafumi Hirose (Shibaura Inst. of Tech., Japan), Toshihide Nabatame (NIMS, Japan), Erika Maeda (Shibaura Inst. of Tech., Japan), Akihiko Ohi, Naoki Ikeda, Yoshihiro Irokawa, Yasuo Koide (NIMS, Japan), Hajime Kiyono (Shibaura Inst. of Tech., Japan)

S9-3 (Time: 15:20 - 15:50)
Title(Invited Paper) Improvement of Gate Oxide Reliability and Instability in GaN-based MOS Devices
Author*Daigo Kikuta, Kenji Ito, Tetsuo Narita, Tomohiko Mori, Keita Kataoka, Noritake Isomura, Kousuke Kitazumi (Toyota Central R&D Labs., Japan), Tetsu Kachi (Nagoya Univ., Japan)


[To Session Table]

Session A  Award Ceremony
Time: 15:50 - 16:00 Wednesday, November 20, 2019
Chair: Hiroyuki Kageshima (Shimane Univ., Japan)


[To Session Table]

Session C  Closing
Time: 16:00 - 16:10 Wednesday, November 20, 2019
Chair: Hiroshi Nohira (Tokyo City Univ., Japan)