2019 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY
Technical Program

Remark: The presenter of each paper is marked with "*".

Author Index: HERE

Session Schedule

Monday, November 18, 2019

Social Program: TSUBAME tour
11:00 - 12:00

Registration
12:00 -

Opening Address
13:00 - 13:10

K1 Keynote
13:10 - 15:10

Photo
15:10 - 15:20

Break
15:20 - 15:40

S1 Process & Characterization
15:40 - 17:00

Break
17:00 - 17:10

P Poster Session
17:10 - 19:10

Tuesday, November 19, 2019

S2 Memory 1
9:30 - 10:20

Break
10:20 - 10:40

S3 Application of Ferroelectric Film
10:40 - 11:50

Lunch
11:50 - 13:00

S4 2D, TFT & Characterization Technique
13:00 - 14:30

Break
14:30 - 14:50

S5 Focus Session
14:50 - 17:20

Break
17:20 - 18:00

Banquet
18:00 - 20:00

Wednesday, November 20, 2019

S6 Memory 2 & Dipole Control
9:30 - 11:00

Break
11:00 - 11:20

S7 Dielectrics in SiC 1 & Dielectrics in Ge
11:20 - 12:30

Lunch
12:30 - 13:40

S8 Dielectrics in SiC 2
13:30 - 14:20

Break
14:20 - 14:40

S9 Dielectrics in GaN
14:40 - 15:50

A Award Ceremony
15:50 - 16:00

C Closing
16:00 - 16:10

List of papers

Remark: The presenter of each paper is marked with "*".

Monday, November 18, 2019

[To Session Table]

Session K1 Keynote
Time: 13:10 - 15:10 Monday, November 18, 2019
Chairs: Hiroshi Nohira (Tokyo City Univ., Japan), Hiroyuki Kageshima (Shimane Univ., Japan)

K1-1 (Time: 13:10 - 14:10)

Title	(Keynote Address) Facts and Myths of Dielectric Breakdown Processes
Author	*Ernest Y. Wu (IBM Research, USA)
Page	pp. 2 - 3

K1-2 (Time: 14:10 - 15:10)

Title	(Keynote Address) Importance of Semiconductor MOS Interface Control on Advanced Electron Devices
Author	*Shinichi Takagi, T.-E. Lee, M. Ke, S.-H. Yoon, D.-H. Ahn, K. Kato, K. Toprasertpong, M. Takenaka (Univ. of Tokyo, Japan)
Page	pp. 4 - 5

[To Session Table]

Session S1 Process & Characterization
Time: 15:40 - 17:00 Monday, November 18, 2019
Chairs: Kazuo Tsutsui (Tokyo Inst. of Tech., Japan), K. S. Chang-Liao (National Tsing Hua Univ., Taiwan)

S1-1 (Time: 15:40 - 16:00)

Title	Characterization of Dynamic Behaviors of Carrier Traps in Silicon Nitride Films Created by Ar and He Plasma Exposures
Author	*Tomohiro Kuyama, Keiichiro Urabe, Koji Eriguchi (Kyoto Univ., Japan)
Page	pp. 6 - 7

S1-2 (Time: 16:00 - 16:20)

Title	Evaluation of Reactive Ion Etching-induced Damage on 2DEG at AlGaN/GaN Interface
Author	*Mikito Nozaki, Daiki Terashima (Osaka Univ., Japan), Akitaka Yoshigoe (Japan Atomic Energy Agency, Japan), Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan)
Page	pp. 8 - 9

S1-3 (Time: 16:20 - 16:40)

Title	Effects of ZrON and CF₄ Plasma Treatment in Gate Stack on Electrical Characteristics of FinFETs
Author	*Ying-Zhuang Chien, Kuei-Shu Chang-Liao, Yan-Lin Li, Dun-Bao Ruan, Shang-Hua Hsu, Kuan-Yu Lai, Bo-Xun Lu (National Tsing Hua Univ., Taiwan)
Page	pp. 10 - 11

S1-4 (Time: 16:40 - 17:00)

Title	Complex Dielectric Function of Si Oxide as Evaluated from Photoemission Measurements
Author	*Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ., Japan)
Page	pp. 12 - 13

[To Session Table]

Session P Poster Session
Time: 17:10 - 19:10 Monday, November 18, 2019
Chair: Hiroyuki Kageshima (Shimane Univ., Japan)

P-1

Title	Analog Behavior of HfO₂ Charge Trap Memory for Artificial Synapse
Author	*Taiho Yoshinaka, Hisato Ohnishi, Yasuo Nara (Univ. of Hyogo, Japan)
Page	pp. 14 - 15

P-2

Title	Charge Storage Mechanism of the Potassium Ion Electret Used for Future Energy Harvesting Devices
Author	*Toru Nakanishi, Takeshi Miyajima, Masaaki Araidai, Kenji Shiraishi (Nagoya Univ., Japan)
Page	pp. 16 - 17

P-3

Title	Fabrication of GaO_x Based Crossbar Array Memristive Devices and Their Resistive Switching Properties
Author	*Mamoru Joko, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai (Osaka Univ., Japan)
Page	pp. 18 - 19

P-4

Title	Effect of Embedding in Dielectric Film on the Performance of Si-Nanowire Thermoelectric Generator
Author	*Sakika Tanabe, Kaito Oda, Hiroki Takezawa, Kohei Mesaki, Motohiro Tomita (Waseda Univ., Japan), Takeo Matsuki, Takashi Matsukawa (AIST, Japan), Takanobu Watanabe (Waseda Univ., Japan)
Page	pp. 20 - 21

P-5

Title	Electrical Characteristics of Atomic Layer Deposited Y-silicate Dielectrics
Author	*Jinhan Song, Atsuhiro Ohta, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima (Tokyo Inst. of Tech., Japan)
Page	pp. 22 - 23

P-6

Title	Effect of Nb₂O₅ Doping on Low Frequency Properties of Li₂SnO₃ Ceramics
Author	Yung-Yu Chen, *Jian-Hao Jiang (Lunghwa Univ. of Science and Tech., Taiwan)
Page	pp. 24 - 25

P-7

Title	Pressure and SiO Cooperative Effect on Diffusivity in Si Oxide
Author	Yuji Yajima (Shimane Univ., Japan), Kenji Shiraishi (Nagoya Univ., Japan), Tetsuo Endoh (Tohoku Univ., Japan), *Hiroyuki Kageshima (Shimane Univ., Japan)
Page	pp. 26 - 27

P-8

Title	Growth of Bismuth-Based Oxide Dielectric Thin Films Using Atomic Layer Deposition
Author	*Xinyu Teng, Shanghao Zha, Mitsuhiro Hirabayashi, Naoki Shimosako, Hiroshi Uchida, Hiroshi Sakama (Sophia Univ., Japan)
Page	pp. 28 - 29

P-9

Title	Pulse Deposition of Y₂O₃ Films by Y(ⁱPrCp)₃ Assisted by Ar Boost Technology
Author	*YuWei Lin, Jinhan Song, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima (Tokyo Inst. of Tech., Japan)
Page	pp. 30 - 31

P-10

Title	ITO Thin Films Fabricated by Hybrid Facing Cathode Sputtering Using DC-RF Coupled Power: Realization of Ultra Low Sputtering Voltage
Author	*Shinichi Morohashi (Yamaguchi Univ., Japan)
Page	pp. 32 - 33

P-11

Title	Experimental Study of Low-temperature Oxidation of SiGe by Ozone
Author	*Xueli Ma, Xiaolei Wang, Wenwu Wang (Chinese Academy of Sciences, China)
Page	pp. 34 - 35

P-12

Title	Density Profile of Thermal SiO₂ Films on 4H-SiC (000-1)
Author	*Satoru Iioka, Ryu Hasunuma (Univ. of Tsukuba, Japan)
Page	pp. 36 - 37

P-13

Title	Effect of Thermal Boundary Resistance at Metal/Dielectric Interfaces on Output Power in Silicon Nanowire Thermoelectric Generator
Author	*Tianzhuo Zhan, Kaito Oda, Shuaizhe Ma, Hiroki Takezawa, Kohei Mesaki, Motohiro Tomita (Waseda Univ., Japan), Yen-ju Wu, Yibin Xu (NIMS, Japan), Takashi Matsukawa, Takeo Matsuki (AIST, Japan), Takanobu Watanabe (Waseda Univ., Japan)
Page	pp. 38 - 39

P-14

Title	XPS Study on Film Thickness Dependence of Surface Charge-up and Resistance of SiO₂ Films on Si
Author	*Kota Ushimaru, Takahiro Harie (Waseda Univ./JAXA, Japan), Daisuke Kobayashi (JAXA, Japan), Tomoyuki Yamamoto (Waseda Univ., Japan), Kazuyuki Hirose (Waseda Univ./JAXA, Japan)
Page	pp. 40 - 41

P-15

Title	Characterization of Fast Relaxation by Oxide-trapped Charges under BTI stress on 64-nm HfSiON/SiO₂ MOSFETs
Author	*Hyeokjin Kim, Giyoun Roh (POSTECH, Republic of Korea), Seonhaeng Lee (SK Hynix, Republic of Korea), Bongkoo Kang (POSTECH, Republic of Korea)
Page	pp. 42 - 43

P-16

Title	Under-gate-dipole-controlled Current Conduction in High-permittivity Insulators
Author	*Atsushi Hiraiwa, Satoshi Okubo, Kiyotaka Horikawa, Hiroshi Kawarada (Waseda Univ., Japan)
Page	pp. 44 - 45

P-17

Title	Preparation of Ferroelectric Yttrium-doped Hafnium-Zirconium Dioxide Thin Films By Solution Process.
Author	*Mohit, Ken-ichi Haga, Eisuke Tokumitsu (JAIST, Japan)
Page	pp. 46 - 47

P-19

Title	Characterization of Interface Trap Density of High-k Gate Stack by Low-Temperature Ambient-Controlled Flash Lamp Annealing
Author	*Kodai Shuto, Taiho Yoshinaka, Ryo Hashimoto (Univ. of Hyogo, Japan), Hikaru Kawarazaki, Takayuki Aoyama, Shinichi Kato (SCREEN Semiconductor Solutions Co., Japan), Yasuo Nara (Univ. of Hyogo, Japan)
Page	pp. 48 - 49

P-20

Title	Influence of Silicon Wafer Surface Roughness on Semiconductor Device Characteristics
Author	*Keiichiro Mori (Tohoku Univ., Japan), Shuichi Samata, Noritomo Mitsugi (SUMCO, Japan), Akinobu Teramoto (Hiroshima Univ., Japan), Rihito Kuroda, Tomoyuki Suwa, Keiichi Hashimoto, Shigetoshi Sugawa (Tohoku Univ., Japan)
Page	pp. 50 - 51

P-21

Title	Electron Mobility in Si Nanowire Considering Nonlinear Surface Roughness Scattering Model
Author	*Jiahui Duan, Xiaolei Wang, Lixing Zhou, Xueli Ma, Jinjuan Xiang, Wenwu Wang (Chinese Academy of Sciences, China)
Page	pp. 52 - 53

P-22

Title	Synchrotron Radiation Photoelectron Spectroscopy Study on Oxides Formed at Ge(100)2×1 Surface in Atmosphere
Author	*Akitaka Yoshigoe (Japan Atomic Energy Agency, Materials Sciences Research Center, Japan)
Page	pp. 54 - 55

P-23

Title	Angle-resolved Hard X-ray Photoelectron Spectroscopy Study of ICP etching Damage Layer on Diamond Surface
Author	*Reito Wada, Kohei Takizawa (Tokyo City Univ., Japan), Yukako Kato, Masahiko Ogura, Toshiharu Makino, Satoshi Yamasaki (AIST, Japan), Hiroshi Nohira (Tokyo City Univ., Japan)
Page	pp. 56 - 57

P-24

Title	Investigation on Universality of Hot-Carrier Induced Degradation in High-Voltage MOS Transistors
Author	*Jone F. Chen, Ming-Ju Sun (National Cheng Kung Univ., Taiwan), Hao-Tang Hsu, Hann-Ping Hwang (Powerchip Semiconductor Manufacturing, Taiwan)
Page	pp. 58 - 59

P-25

Title	Analysis of Positive Bias Temperature Instability Degradation in n⁺ and p⁺ poly-Si Gates of High-Voltage SiO₂ Dielectric nMOSFETs
Author	*Yeohyeok Yun (POSTECH, Republic of Korea), Ji-Hoon Seo (Samsung Electronics, Republic of Korea), Bongkoo Kang (POSTECH, Republic of Korea)
Page	pp. 60 - 61

P-26

Title	Channel-length Dependence of the Generation of Interface States and Oxide-trapped Charges on Drain Avalanche Hot Carrier Degradation of HfSiON/SiO₂ p-channel MOSFETs with Strained Si/SiGe Channel
Author	*Hyeokjin Kim, Giyoun Roh (POSTECH, Republic of Korea), Seonhaeng Lee (SK Hynix, Republic of Korea), Bongkoo Kang (POSTECH, Republic of Korea)
Page	pp. 62 - 63

P-27

Title	Insight into Ga Diffusion in SiO₂ Dielectric Layer and Process Design for Improved Reliability of GaN-based MOS Devices
Author	*Yuhei Wada, Mikito Nozaki, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan)
Page	pp. 64 - 65

P-28

Title	Experimental Optimization of Post Metal Annealing of Fully Depleted-Silicon on Insulator Tunneling Field Effect Transistor
Author	*Hyun-Dong Song, Hyeong-Sub Song (Chungnam National Univ., Republic of Korea), Sunil Babu Eady (Chungnam National Univ., India), Hyun-Woong Choi, Ga-Won Lee, Hi-Deok Lee (Chungnam National Univ., Republic of Korea)
Page	pp. 66 - 67

P-29

Title	Non-destructive Evaluation of Chemical Bonding States at Buried Interface using Laboratory Hard X-ray Photoelectron Spectroscopy
Author	*Tappei Nishihara, Hiroki Kanai (Meiji Univ., Japan), Toshiro Okawa (Scienta Omicron, Japan), Atsushi Ogura (Meiji Univ., Japan)
Page	pp. 68 - 69

Tuesday, November 19, 2019

[To Session Table]

Session S2 Memory 1
Time: 9:30 - 10:20 Tuesday, November 19, 2019
Chairs: Jiezhi Chen (Shandong Univ., China), Masao Inoue (Renesas Electronics, Japan)

S2-1 (Time: 9:30 - 10:00)

Title	(Invited Paper) Ge-based Non-Volatile Memories
Author	*Yi Zhao, Yi Zhang, Na Wei, Bing Chen (Zhejiang Univ., China)
Page	pp. 70 - 71

S2-2 (Time: 10:00 - 10:20)

Title	Improved Erasing Speed of Poly-Si Gate-All-Around Junctionless Charge-Trapping Flash Memory Devices with ZrO₂ in Stacked Trapping Layer
Author	*Ping-Shun Ding, K.S. Chang-Liao, Hsin-Kai Fang, Chia-Hsin Cheng (National Tsing Hua Univ., Taiwan), Wen-Hsien Huang, Chang-Hong Shen, Jia-Min Shieh (Taiwan Semiconductor Research Institute, Taiwan)
Page	pp. 72 - 73

[To Session Table]

Session S3 Application of Ferroelectric Film
Time: 10:40 - 11:50 Tuesday, November 19, 2019
Chairs: Shinji Migita (AIST, Japan), Yi Zhao (Zhejiang Univ., China)

S3-1 (Time: 10:40 - 11:10)

Title	(Invited Paper) Effect of Al Nanoclusters Embedded by Sub-Monolayer Doping System on Reliability in Ferroelectric Hf_0.5Zr_0.5O₂ Film
Author	*Tadashi Yamaguchi, Kazuyuki Omori, Yasuhiro Shimada, Yorinobu Kunimune, Takashi Ide, Masao Inoue, Masazumi Matsuura (Renesas Electronics, Japan)
Page	pp. 74 - 75

S3-2 (Time: 11:10 - 11:30)

Title	Switching Parameter Dependence on Negative-capacitance Behavior of RC Circuit with Ferroelectric Capacitor
Author	*Eisuke Tokumitsu (JAIST, Japan)
Page	pp. 76 - 77

S3-3 (Time: 11:30 - 11:50)

Title	Ferroelectric Phase Evolution of Undoped ZrO₂ Thin Film by Wet O₂ Annealing Process
Author	*Shigehisa Shibayama, Jotaro Nagano, Mitsuo Sakashita, Osamu Nakatsuka (Nagoya Univ., Japan)
Page	pp. 78 - 79

[To Session Table]

Session S4 2D, TFT & Characterization Technique
Time: 13:00 - 14:30 Tuesday, November 19, 2019
Chairs: Shu Nakaharai (NIMS, Japan), Hiroshi Ashihara (KOKUSAI ELECTRIC, Japan)

S4-1 (Time: 13:00 - 13:30)

Title	(Invited Paper) Understanding Interface Properties in 2D Heterostructure FETs
Author	*Kosuke Nagashio (Univ. of Tokyo, Japan)
Page	pp. 80 - 81

S4-2 (Time: 13:30 - 13:50)

Title	Positive Threshold Voltage in Accumulation Capacitance of TiN-Top-Gate/High-k/Sputtered-MoS₂ Stacks
Author	*Haruki Tanigawa, Kentaro Matsuura, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi (Tokyo Inst. of Tech., Japan)
Page	pp. 82 - 83

S4-3 (Time: 13:50 - 14:10)

Title	Characteristics of Oxide TFT with Amorphous Carbon-Doped In₂O₃ Channel Using 150 ºC Low Temperature Process with ALD and O₃ Annealing
Author	*Riku Kobayashi (Meiji Univ., Japan), Toshihide Nabatame, Kazunori Kurishima (NIMS, Japan), Takashi Onaya (Meiji Univ., Japan), Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi (NIMS, Japan), Atsushi Ogura (Meiji Univ., Japan)
Page	pp. 84 - 85

S4-4 (Time: 14:10 - 14:30)

Title	Development of Time-Division Depth-Profiling Techniques in Multi- Layered Dielectric Thin Films by using Near-Ambient-Pressure Hard X-ray Angle-Resolved Photoemission Spectroscopy
Author	*Satoshi Toyoda (Tohoku Univ., Japan), Tomoki Yamamoto (Univ. of Hyogo, Japan), Masashi Yoshimura (Spring-8 Service, Japan), Hirosuke Sumida, Susumu Mineoi (Mazda Motor, Japan), Masatake Machida (Scienta Omicron, Japan), Akitaka Yoshigoe (Japan Atomic Energy Agency, Japan), Akira Yoshikawa (Tohoku Univ., Japan), Satoru Suzuki, Kazushi Yokoyama (Univ. of Hyogo, Japan)
Page	pp. 86 - 87

[To Session Table]

Session S5 Focus Session
Time: 14:50 - 17:20 Tuesday, November 19, 2019
Chairs: Hiroyuki Kageshima (Shimane Univ., Japan), Yuuichiro Mitani (Toshiba, Japan)

S5-1 (Time: 14:50 - 15:20)

Title	(Invited Paper) Role of Stress and Carrier in Oxidation on Si Surfaces
Author	Jaiyi Tang (Tohoku Univ., China), Yuki Sekihata, Shuichi Ogawa (Tohoku Univ., Japan), Akitaka Yoshigoe (Japan Atomic Energy Agency, Japan), *Yuji Takakuwa (Tohoku Univ., Japan)
Page	pp. 88 - 89

S5-2 (Time: 15:20 - 15:50)

Title	(Invited Paper) Oxidation of SiGe Alloy: Residual Order in SiO₂ and Self-limiting Oxidation
Author	*Takayoshi Shimura, Takuji Hosoi, Heiji Watanabe (Osaka Univ., Japan)
Page	pp. 90 - 91

S5-3 (Time: 15:50 - 16:20)

Title	(Invited Paper) Thermal Oxidation of Germanium
Author	*Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo, Japan)
Page	pp. 92 - 93

S5-4 (Time: 16:20 - 16:50)

Title	(Invited Paper) Thermal Oxidation of SiC: Kinetics and SiO₂/SiC Interface Property
Author	*Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan)
Page	pp. 94 - 95

S5-5 (Time: 16:50 - 17:20)

Title	(Invited Paper) Native Oxides on GaN(0001) and Crystalline Intermediate Layers in Oxides/GaN(0001)
Author	*Yoshihiro Irokawa (NIMS, Japan)
Page	pp. 96 - 97

Wednesday, November 20, 2019

[To Session Table]

Session S6 Memory 2 & Dipole Control
Time: 9:30 - 11:00 Wednesday, November 20, 2019
Chairs: Koji Kita (Univ. of Tokyo, Japan), Wenwu Wang (Chinese Academy of Sciences, China)

S6-1 (Time: 9:30 - 10:00)

Title	(Invited Paper) Emerging Memory for Data-Centric Computing
Author	*Tuo-Hung Hou (National Chiao Tung Univ., Taiwan)
Page	pp. 98 - 99

S6-2 (Time: 10:00 - 10:20)

Title	Effect of EOT Scaling on Switching Operation of HfO₂/SiO₂-Based Interface Dipole Modulation FETs
Author	*Noriyuki Miyata (AIST, Japan)
Page	pp. 100 - 101

S6-3 (Time: 10:20 - 10:40)

Title	Difference of Temperature Effects on Al₂O₃/SiO₂ Interface Dipole Layer Strength by SiO₂ Growth Methods
Author	*Takashi Hamaguchi, Koji Kita (Univ. of Tokyo, Japan)
Page	pp. 102 - 103

S6-4 (Time: 10:40 - 11:00)

Title	Dipole Reversal Induced by Phase-transition at Hetero-Oxide Interface Simulated by Molecular Dynamics
Author	*Shota Kanemaru, Marc Perea Causin, Motohiro Tomita, Takanobu Watanabe (Waseda Univ., Japan)
Page	pp. 104 - 105

[To Session Table]

Session S7 Dielectrics in SiC 1 & Dielectrics in Ge
Time: 11:20 - 12:30 Wednesday, November 20, 2019
Chairs: Tomoya Ono (Kobe Univ., Japan), Tuo-Hung Hou (National Chiao Tung Univ., Taiwan)

S7-1 (Time: 11:20 - 11:40)

Title	Notable Difference between Rapid-Thermal and Microwave Annealings on Ge pMOSFETs
Author	*Yu-Ting Kuo, Kuei-Shu Chang-Liao, Ying-Zhuang Chien, Ping-Shun Ding, Shi-Han Yi (National Tsing Hua Univ., Taiwan)
Page	pp. 106 - 107

S7-2 (Time: 11:40 - 12:00)

Title	Suppression of V_FB Instability of p-type 4H-SiC (0001) MOS capacitor by H₂O-POA without O₂ Introduction
Author	*Jun Koyanagi, Koji Kita (Univ. of Tokyo, Japan)
Page	pp. 108 - 109

S7-3 (Time: 12:00 - 12:20)

Title	Ab Initio Calculations for the Effect of Wet Oxidation Condition on the Reaction Processes at 4H-SiC/SiO₂ Interface
Author	*Tsunashi Shimizu, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito (Mie Univ., Japan), Hiroyuki Kageshima (Shimane Univ., Japan), Masashi Uematsu (Keio Univ., Japan), Kenji Shiraishi (Nagoya Univ., Japan)
Page	pp. 110 - 111

[To Session Table]

Session S8 Dielectrics in SiC 2
Time: 13:30 - 14:20 Wednesday, November 20, 2019
Chairs: Takuji Hosoi (Osaka Univ., Japan), Toru Akiyama (Mie Univ., Japan)

S8-1 (Time: 13:30 - 14:00)

Title	(Invited Paper) SiC MOS Interface: What Limits the Channel Mobility?
Author	*Hiroshi Yano (Univ. of Tsukuba, Japan)
Page	pp. 112 - 113

S8-2 (Time: 14:00 - 14:20)

Title	Investigation of Thermal Oxidation-induced Lattice Distortion at the Surface of 4H-SiC and Its Origins
Author	Adhi Dwi Hatmanto, *Koji Kita (Univ. of Tokyo, Japan)
Page	pp. 114 - 115

[To Session Table]

Session S9 Dielectrics in GaN
Time: 14:40 - 15:50 Wednesday, November 20, 2019
Chairs: Noriyuki Taoka (Nagoya Univ., Japan), Yoshihiro Sugita (Socionext, Japan)

S9-1 (Time: 14:40 - 15:00)

Title	Ex-Situ Grown Low-Temperature SiNx Using Hollow Cathode Plasma-Enhanced Atomic Layer Deposition (PEALD) with Crystalline Interfacial Layer on AlGaN/GaN Substrates
Author	*Sumin Hwang, Xin Meng (Univ. of Texas, Dallas, USA), Si Joon Kim (Kangwon National Univ., Republic of Korea), Arul V. Ravichandran, Antonio T. Lucero (Univ. of Texas, Dallas, USA), Jaegab Lee (Kookmin Univ., Republic of Korea), Byung Keun Hwang (Dow Chemical Company, Republic of Korea), Jiyoung Kim (Univ. of Texas, Dallas, USA)
Page	pp. 116 - 117

S9-2 (Time: 15:00 - 15:20)

Title	Influence of Post-Metallization Annealing on the Characteristics of Pt/Al₂O₃/n-β-Ga₂O₃ Capacitors after Post-Deposition Annealing
Author	*Masafumi Hirose (Shibaura Inst. of Tech., Japan), Toshihide Nabatame (NIMS, Japan), Erika Maeda (Shibaura Inst. of Tech., Japan), Akihiko Ohi, Naoki Ikeda, Yoshihiro Irokawa, Yasuo Koide (NIMS, Japan), Hajime Kiyono (Shibaura Inst. of Tech., Japan)
Page	pp. 118 - 119

S9-3 (Time: 15:20 - 15:50)

Title	(Invited Paper) Improvement of Gate Oxide Reliability and Instability in GaN-based MOS Devices
Author	*Daigo Kikuta, Kenji Ito, Tetsuo Narita, Tomohiko Mori, Keita Kataoka, Noritake Isomura, Kousuke Kitazumi (Toyota Central R&D Labs., Japan), Tetsu Kachi (Nagoya Univ., Japan)
Page	pp. 120 - 121

[To Session Table]

Session A Award Ceremony
Time: 15:50 - 16:00 Wednesday, November 20, 2019
Chair: Hiroyuki Kageshima (Shimane Univ., Japan)

[To Session Table]

Session C Closing
Time: 16:00 - 16:10 Wednesday, November 20, 2019
Chair: Hiroshi Nohira (Tokyo City Univ., Japan)

2019 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY Technical Program

Session Schedule

List of papers

2019 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY
Technical Program