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2017 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY
Technical Program

Remark: The presenter of each paper is marked with "*".
Author Index:   HERE

Session Schedule


Monday, November 20, 2017

Opening Address
13:00 - 13:10
K1  Keynote 1
13:10 - 14:10
S1  Memory Materials and Devices
14:10 - 15:40
Break
15:40 - 15:50
G  Poster Shotgun
15:50 - 16:50
P  Poster Session
16:50 - 18:50

Tuesday, November 21, 2017

K2  Keynote 2
9:00 - 10:00
Break
10:00 - 10:20
S2  GaN Devices and Characterization
10:20 - 12:10
Lunch
12:10 - 14:00
S3  Technology for Advanced CMOS
14:00 - 15:30
Coffee Break
15:30 - 15:50
S4  Dielectrics for New Channel Materials
15:50 - 17:00
Break
17:00 - 17:20
S5  High-k Gate Stack 1
17:20 - 18:30
Break
18:30 - 18:50
Banquet
18:50 - 20:50

Wednesday, November 22, 2017

S6  Process and Reliability of Dielectrics
9:00 - 10:50
Break
10:50 - 11:10
S7  High-k Gate Stack 2
11:10 - 12:20
Lunch
12:20 - 14:00
S8  Characterization of SiC MOS 1
14:00 - 15:40
Coffee Break
15:40 - 16:00
S9  Characterization of SiC MOS 2
16:00 - 16:50
C  Closing Remarks
16:50 - 17:10


List of papers

Remark: The presenter of each paper is marked with "*".

Monday, November 20, 2017

Session K1  Keynote 1
Time: 13:10 - 14:10 Monday, November 20, 2017
Chair: Yasuo Nara (Univ. of Hyogo, Japan)

K1-1 (Time: 13:10 - 14:10)
Title(Keynote Address) An Overview of STT-MRAM and CMOS/MTJ Hybrid NV-Logic from NV-MPU/MCU to NV-Brain-Inspired VLSIs
Author*Tetsuo Endoh (Tohoku Univ., Japan)
Pagepp. 2 - 5


Session S1  Memory Materials and Devices
Time: 14:10 - 15:40 Monday, November 20, 2017
Chairs: Yasuo Nara (Univ. of Hyogo, Japan), Akira Sakai (Osaka Univ., Japan)

S1-1 (Time: 14:10 - 14:40)
Title(Invited Paper) Analog Memory Devices and Circuits for Future Brain-like AI Processors
Author*Takashi Morie (Kyushu Inst. of Tech.)
Pagepp. 6 - 9

S1-2 (Time: 14:40 - 15:00)
TitleBias Modulated Resistive Switching Phenomena and Dopamine Sensing by Using Novel IrOx/Al2O3/TaOx/TiN Structure
Author*Subhranu Samanta, Anisha Roy, Surajit Jana, Siddheswar Maikap (Chang Gung Univ., Taiwan)
Pagepp. 10 - 11

S1-3 (Time: 15:00 - 15:20)
TitleMultifunctional Characteristics of Porous Ir Thin Layer for Conductive Bridging Memory and Tributyrine Detection
Author*Mrinmoy Dutta, Anisha Roy, Surajit Jana, Siddheswar Maikap (Chang Gung Univ., Taiwan)
Pagepp. 12 - 13

S1-4 (Time: 15:20 - 15:40)
TitleLow-Voltage High-Speed Programming Gate-All-Around Floating Gate Memory Cell with Tunnel Barrier Engineering
AuthorAfiq Nurudin Hamzah, *Nurul Ezaila Alias, Zaharah Johari, Razali Ismail (Univ. Teknologi Malaysia, Malaysia)
Pagepp. 14 - 15


Session G  Poster Shotgun
Time: 15:50 - 16:50 Monday, November 20, 2017
Chairs: Osamu Nakatsuka (Nagoya Univ., Japan), Yoshihiro Sugita (Socionext, Japan)


Session P  Poster Session
Time: 16:50 - 18:50 Monday, November 20, 2017
Chairs: Osamu Nakatsuka (Nagoya Univ., Japan), Yoshihiro Sugita (Socionext, Japan)

Paper Award
P-1
TitleXPS Study on Evaluation of Electrical Dipole and Atomic Density Ratio at Ultrathin High-k Dielectrics/SiO2 Interface
Author*Nobuyuki Fujimura, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ., Japan)
Pagepp. 16 - 17

P-2
TitleElectrical Properties of SiO2/GaN Interfaces Formed by Remote Oxygen Plasma Mixed with He or Ar
Author*Truyen Xuan Nguyen (Nagoya Univ., Japan), Noriyuki Taoka (AIST-NU GaN Advance Device Open Innovation Lab., Japan), Akio Ohta, Katsunori Makihara (Nagoya Univ., Japan), Hisashi Yamada, Tokio Takahashi (AIST-NU GaN Advance Device Open Innovation Lab., Japan), Mitsuhisa Ikeda (Nagoya Univ., Japan), Mitsuaki Shimizu (AIST-NU GaN Advance Device Open Innovation Lab., Japan), Seiichi Miyazaki (Nagoya Univ., Japan)
Pagepp. 18 - 19

P-3
TitleCrystalline La2O3 High-k Gate Insulator for Ge-MISFET Operation
Author*Takeshi Kanashima, Masato Zenitaka, Hitohisa Furusho (Osaka Univ., Japan), Keisuke Yamamoto, Hiroshi Nakashima (Kyushu Univ., Japan)
Pagepp. 20 - 21

P-4
TitleEffects of Capping Oxide Layers for Poly-Si Thin Film Transistor via Continuous Wave Laser Crystallization
Author*Yi-Shao Li, Chun-Yi Wu, Chia-Hsin Chou, Huang-Chung Cheng (National Chiao Tung Univ., Taiwan)
Pagepp. 22 - 23

P-5
TitleHigh Performance InGaZnO Thin Film Transistor by Dry Plasma Reduction Treatment
Author*Byung-Jun Jeong, Jun-Kyo Jeong, Jung-Hyun Park, Yu-Jung Kim, Hi-Deok Lee, Ga-Won Lee, Ho-Suk Choi (Chungnam National Univ., Republic of Korea)
Pagepp. 24 - 25

P-6
TitleThe Effect of Dielectric Thickness on MOS Carrier Mobility
AuthorWei-Hao Li, *Jung-Hua Chou (National Cheng Kung Univ., Taiwan)
Pagepp. 26 - 27

P-7
TitleComputational Experiment on Dipole Formation at High-k/SiO2 Interface Using Virtual Oxide Models
Author*Nobuhiro Nakagawa, Okuto Takahashi, Takanobu Watanabe (Waseda Univ., Japan)
Pagepp. 28 - 29

P-8
TitleEffects of Annealing Ambient on Interface Charge and Dipole in GeOx/Al2O3 Gate Stacks of Ge Based MOSCAP
Author*Lixing Zhou, Xiaolei Wang, Jinjuan Xiang, Chao Zhao, Tianchun Ye, Wenwu Wang (Chinese Academy of Sciences, China)
Pagepp. 30 - 31

P-9
TitleFerroelectric Characteristics of Undoped Hafnium Oxide Thin Films by Using Low Annealing Temperature
Author*Jun-Dao Luo, Kai-Chi Chuang (National Chiao Tung Univ., Taiwan), Hsuan-Han Chen (National Taiwan Normal Univ., Taiwan), Chan-Yu Liao, Wei-Shuo Li, Yi-Shao Li (National Chiao Tung Univ., Taiwan), Kai-Shin Li (National Nano Device Laboratories, Taiwan), Min-Hung Lee (National Taiwan Normal Univ., Taiwan), Huang-Chung Cheng (National Chiao Tung Univ., Taiwan)
Pagepp. 32 - 33

P-10
TitleCharge Storage Characteristics of HfOx Thin Film for Energy Harvesting Device Application
Author*Haruki Matsuo, Masahiro Hatamoto, Hidenobu Mori, Yasuo Nara (Univ. of Hyogo, Japan)
Pagepp. 34 - 35

P-11
TitleStress Injection Polarity Dependent Asymmetric Trap Generation in MIM Capacitors
Author*Soo Cheol Kang, Sang Kyung Lee, Jinwoo Noh, Seung-Mo Kim, Sung Kwan Lim, Byoung Hun Lee (Gwangju Inst. of Science and Tech., Republic of Korea)
Pagepp. 36 - 37

P-12
TitleFabrication of Low Temperature Poly (4-vinylphenol) Gate Dielectric for IGZO TFTs
Author*Jung-Hyun Park, Jun-Kyo Jeong, Yu-Jung Kim, Byung-Jun Jeong, Hi-Deok Lee, Ga-Won Lee (Chungnam National Univ., Republic of Korea)
Pagepp. 38 - 39

P-13
TitleElectrical Reponses of TaOx-Based RRAM Device to Neuromorphic Characteristics
Author*Yawar Abbas, Andrey Sergeevich Sokolov, Yu-Rim Jeon, Sohyeon Kim, Boncheol Ku, Changhwan Choi (Hanyang Univ., Republic of Korea)
Pagepp. 40 - 41

P-14
TitleInvestigation of Dipole Formation at AlOxNy/SiO2 Interface by MD Simulation
Author*Okuto Takahashi, Nobuhiro Nakagawa, Motohiro Tomita, Takanobu Watanabe (Waseda Univ., Japan)
Pagepp. 42 - 43

P-15
TitleEnergy Band Structure of Ga-oxide/GaN Interface Formed by Remote O2 Plasma
Author*Taishi Yamamoto (Nagoya Univ., Japan), Noriyuki Taoka (AIST, Japan), Akio Ohta, Truyen Xuan Nguyen (Nagoya Univ., Japan), Hisashi Yamada, Tokio Takahashi (AIST, Japan), Mitsuhisa Ikeda, Katsunori Makihara, Osamu Nakatsuka (Nagoya Univ., Japan), Mitsuaki Shimizu (AIST, Japan), Seiichi Miyazaki (Nagoya Univ., Japan)
Pagepp. 44 - 45

P-16
TitleMachine Learning of Interfacial Dipole Moments Between Multicomponent Oxide Films by Neural Network Model
Author*Koki Nakane, Motohiro Tomita, Takanobu Watanabe (Waseda Univ., Japan)
Pagepp. 46 - 47

P-17
TitleInterfacial Analysis of Ionogel Gated In2Ga2Zn1O7 Thin Film Transistors
AuthorMami N. Fujii, *Hiromi Okada, Kenta Komori (NAIST, Japan), Kazumoto Miwa, Simpei Ono (Central Research Institute of Electric Power Industry, Japan), Juan Paolo S. Bermundo, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST, Japan)
Pagepp. 48 - 49

P-18
TitleObservation of Interface Defects in Free Standing Epitaxial Diamond Substrate with Al2O3 Atomic-layer Deposition Studied by Electron Spin Resonance
Author*Chikara Shinei (Univ. of Tsukuba, Japan), Hiromitsu Kato, Toshiharu Makino, Satoshi Yamasaki (AIST, Japan), Takahide Umeda (Univ. of Tsukuba, Japan)
Pagepp. 50 - 51

P-19
TitleStructure and Chemical States of Ultrathin B-doped Si1-XGeX Layer via Annealing
Author*Zong-Zhe Wu, Feng-Ming Chang, Kuang-Yao Lo (National Cheng Kung Univ., Taiwan), Shiu-Ko JangJian (TSMC, Taiwan), Yu-Ming Chang (National Taiwan Univ., Taiwan)
Pagepp. 52 - 53

P-20
TitleElectrical Characteristics of the AlGaNGaN MIS-HEMT with Various in-situ SiN Gate Dielectric Deposition
Author*Yung-Yu Chen, Sin-Hong Lai (Lunghwa Univ. of Science and Tech., Taiwan), Hsien-Chin Chiu (Chang Gung Univ., Taiwan)
Pagepp. 54 - 55

P-21
TitleOxygen Concentration Dependence of Silicon Oxide Dynamical Properties
Author*Yuji Yajima (Shimane Univ., Japan), Kenji Shiraishi (Nagoya Univ., JST-ACCEL, Japan), Tetsuo Endoh (Tohoku Univ., JST-ACCEL, Japan), Hiroyuki Kageshima (Shimane Univ., JST-ACCEL, Japan)
Pagepp. 56 - 57

P-22
TitleTheoretical Study of the Origin of Resistance in Quantum Electric Conduction Phenomena
Author*Kazuma Tsukishima, Masato Senami (Kyoto Univ., Japan)
Pagepp. 58 - 59

P-23
TitleEffects of Ti Interposing Layer and Bi-Layered Dielectric Films on the Resistive Switching Characteristic Improvements of HfOx-Based RRAM
AuthorKai-Chi Chuang, *Hao-Tung Chung, Chi-Yan Chu, Jun-Dao Luo, Wei-Shuo Li, Yi-Shao Li, Huang-Chung Cheng (National Chiao Tung Univ., Taiwan)
Pagepp. 60 - 61

P-24
TitleAnalysis of Ti Valence State in Resistive Switching Region of Rutile TiO2-x Four-Terminal Memristive Device
Author*Kengo Yamaguchi, Shotaro Takeuchi, Tetsuya Tohei (Osaka Univ., Japan), Nobuyuki Ikarashi (Nagoya Univ., Japan), Akira Sakai (Osaka Univ., Japan)
Pagepp. 62 - 63

P-25
TitleResistive Switching Characteristics of Four-Terminal TiO2-x Single Crystal Memristive Devices
Author*Takuma Shimizu, Shotaro Takeuchi, Tetsuya Tohei, Akira Sakai (Osaka Univ., Japan)
Pagepp. 64 - 65

P-26
TitleA Current Model for Fullerene Single Electron Transistor Based on Quantum Dot Arrays at Room Temperature
AuthorVahideh Khadem Hosseini, Mohammad Taghi Ahmadi, Saeid Afrang (Urmia Univ., Iran), Razali Ismail, *Nurul Ezaila Alias (Univ. Teknologi Malaysia, Malaysia)
Pagepp. 66 - 67

P-27
TitleImpact of Sn Content on Structural Properties and Electrical Characteristics of Yb2TiO5 InZnSnO Thin-Film Transistors
Author*Tung-Ming Pan, Bo-Jung Peng, Jim-Long Her (Chang Gung Univ., Taiwan), Keiichi Koyama (Kagoshima Univ., Japan)
Pagepp. 68 - 69

P-28
TitleControl of Electrical Conduction in Solution-based IZO TFTs by Channel Stacking and UV-O3 Treatment
Author*Yu-Jung Kim, Jun-Kyo Jeong, Jung-Hyun Park, Byung-Jun Jeong, Hi-Deok Lee, Ga-Won Lee (Chungnam National Univ., Republic of Korea)
Pagepp. 70 - 71

P-29
TitleThe Effect of Substrate Preheating on ZnO Nanorods-based Perovskite Solar Cells
Author*Tsyr-Rou Lin, Wei-Shuo Li, Shiu-Ting Yang, Huang-Chung Cheng (National Chiao Tung Univ., Taiwan)
Pagepp. 72 - 73

P-30
TitleFabrication and Characterization of ZnO Nanorod Grown by Hydrothermal Synthesis for High sensitivity Ultraviolet Sensor
Author*Jun-Kyo Jeong, Jung-Hyun Park, Yu-Jeong Kim, Byung-Jun Jeong, Hi-Deok Lee, Ga-Won Lee (Chungnam National Univ., Republic of Korea)
Pagepp. 74 - 75

P-31
TitleInvestigation Electricity and Electrochemistry Properties of ZnO: Ga Films Surface Modified by Graphene
Author*Yuehui Hu, Weiqiang Shuai (Jingdezhen Ceramic Institute, China), Bin He (Southern Univ. of Science and Tech., China), Wenjun Zhang (City Univ. of Hong Kong, China), Yichuan Chen (Jingdezhen Ceramic Institute, China)
Pagepp. 76 - 77

P-32
TitleAlON Gate Dielectrics Formed by Repeating ALD-based Thin AlN Deposition and In situ Oxidation for AlGaN/GaN MOS-HFETs
Author*Mikito Nozaki, Kenta Watanabe, Takahiro Yamada (Osaka Univ., Japan), Hongan Shih, Satoshi Nakazawa, Yoshiharu Anda, Tetsuzo Ueda (Panasonic, Japan), Akitaka Yoshigoe (JAEA, Japan), Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan)
Pagepp. 78 - 79

P-33
TitlePhysical and Electrical Characterization of AlGaN/GaN MOS Gate Stacks with AlGaN Surface Oxidation Treatment
Author*Takahiro Yamada, Kenta Watanabe, Mikito Nozaki (Osaka Univ., Japan), Hongan Shih, Satoshi Nakazawa, Yoshiharu Anda, Tetsuzo Ueda (Panasonic, Japan), Akitaka Yoshigoe (JAEA, Japan), Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan)
Pagepp. 80 - 81

P-34
TitleElectrical Analysis on the Interface Defects of SiO2 Films Fabricated by Wet Oxidation Process on SiC (000-1)
Author*Nozomu Iitsuka, Ryu Hasunuma (Univ. of Tsukuba, Japan)
Pagepp. 82 - 83

P-35
TitlePhotovoltaic Properties of Lateral Si Nano Wall Solar Cells
Author*Suguru Tatsunokuchi, Iriya Muneta, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima (Tokyo Inst. of Tech., Japan)
Pagepp. 84 - 85



Tuesday, November 21, 2017

Session K2  Keynote 2
Time: 9:00 - 10:00 Tuesday, November 21, 2017
Chair: Shinji Migita (AIST, Japan)

K2-1 (Time: 9:00 - 10:00)
Title(Keynote Address) New High-K Materials for Next Generation InGaAs and GaN Based Device Applications
AuthorEdward Yi Chang, Quang-Ho Luc, *Yueh-Chin Lin (National Chiao Tung Univ., Taiwan)
Pagepp. 86 - 89


Session S2  GaN Devices and Characterization
Time: 10:20 - 12:10 Tuesday, November 21, 2017
Chairs: Noriyuki Taoka (AIST, Japan), Yasushi Akasaka (Tokyo Electron, Japan)

S2-1 (Time: 10:20 - 10:50)
Title(Invited Paper) Normally-off MOSFETs on Mg-controlled GaN layers
Author*Katsunori Ueno, Shinya Takashima, Ryo Tanaka, Hideaki Matsuyama, Masaharu Edo (Fuji Electric, Japan), Tokio Takahashi, Mitsuaki Shimizu (AIST, Japan), Kiyokazu Nakagawa (Univ. of Yamanashi, Japan)
Pagepp. 90 - 93

Young Award
S2-2 (Time: 10:50 - 11:10)
TitleSiO2/AlON Stacked Gate Dielectrics for AlGaN/GaN MOS-HFET
Author*Kenta Watanabe, Daiki Terashima, Mikito Nozaki, Takahiro Yamada (Osaka Univ., Japan), Satoshi Nakazawa, Masahiro Ishida, Yoshiharu Anda, Tetsuzo Ueda (Panasonic, Japan), Akitaka Yoshigoe (Japan Atomic Energy Agency, Japan), Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan)
Pagepp. 94 - 95

S2-3 (Time: 11:10 - 11:30)
TitleDrain Current Enhancement Induced by Hole Injection from Gate of 600 V Class Normally-off GaN Gate Injection Transistor under High Temperature Conditions
Author*Hajime Ishii (Tohoku Univ., Japan), Hiroaki Ueno, Tetsuzo Ueda (Panasonic, Japan), Tetsuo Endoh (Tohoku Univ., Japan)
Pagepp. 96 - 97

S2-4 (Time: 11:30 - 11:50)
TitleEvaluation of Filled Electronic States of Epitaxial GaN(0001) Surface by Total Photoelectron Yield Spectroscopy
Author*Akio Ohta, Truyen Xuan Nguyen, Nobuyuki Fujimura, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ., Japan)
Pagepp. 98 - 99

S2-5 (Time: 11:50 - 12:10)
TitleDevelopment of Fluoride Based High-k Dielectric Thin Film for GaN MIS Capacitor
Author*Takahiro Nagata, Shigenori Ueda, Yoshiyuki Yamashita, Asahiko Matsuda, Toyohiro Chikyow (NIMS, Japan)
Pagepp. 100 - 101


Session S3  Technology for Advanced CMOS
Time: 14:00 - 15:30 Tuesday, November 21, 2017
Chairs: Yuuichiro Mitani (Toshiba, Japan), K. S. Chang-Liao (National Tsing Hua Univ., Taiwan)

S3-1 (Time: 14:00 - 14:30)
Title(Invited Paper) Challenges and Progresses in High-k Metal Gate for Silicon-based Advanced CMOS Transistor Architecture
Author*N. Horiguchi, L. -. Ragnarsson, H. Mertens, A. Hiroaki, R. Ritzenthaler, J. Franco, T. Schram, H. Dekkers, D. Mocuta (imec, Belgium)
Pagepp. 102 - 103

S3-2 (Time: 14:30 - 14:50)
TitleReduced Variation of Electrical Characteristics in 16-nm FinFETs by Metal Gate Formed at Lower Temperature
Author*Huang-Jen Chen, Kuei-Shu Chang-Liao, Chih-Ju Lin, Shih-Han Yi (National Tsing Hua Univ., Taiwan)
Pagepp. 104 - 105

S3-3 (Time: 14:50 - 15:10)
TitleImpact of S/D Activation on Pi-Gate Poly-Si P-Channel Junctionless Accumulation Mode (JAM) FinFETs
Author*Tien-Sheng Chao, Dong-Ru Hsieh (National Chiao Tung Univ., Taiwan)
Pagepp. 106 - 107

S3-4 (Time: 15:10 - 15:30)
TitleImproving the Etch Resistance of SiN Using Flash Lamp Annealing while Preventing Dopant Deactivation for Sub-10nm Node Devices
Author*Hikaru Kawarazaki, Akitsugu Ueda, Masashi Furukawa, Takayuki Aoyama, Shinichi Kato, Ippei Kobayashi (SCREEN Semiconductor Solutions, Japan)
Pagepp. 108 - 109


Session S4  Dielectrics for New Channel Materials
Time: 15:50 - 17:00 Tuesday, November 21, 2017
Chairs: Hiroyuki Kageshima (Shimane Univ., Japan), N. Horiguchi (imec, Belgium)

S4-1 (Time: 15:50 - 16:20)
Title(Invited Paper) Carrier Type Control of Transition Metal Dichalcogenide Semiconductors for Advanced CMOS Applications
Author*Shu Nakaharai (NIMS, Japan)
Pagepp. 110 - 113

S4-2 (Time: 16:20 - 16:40)
TitleCharacterization of Defects in Ge1-xSnx Gate Stack Structure
Author*Yuichi Kanede, Shinichi Ike, Masayuki Kanematsu, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ., Japan)
Pagepp. 114 - 115

S4-3 (Time: 16:40 - 17:00)
TitleImproved Electrical and Reliability Characteristics of Ge Buried Channel FinFETs with Interfacial Layers Treated by F and H Plasma
Author*Shang-Fu Tsai, Kuei-Shu Chang-Liao, Yan-Lin Li, Chao-Chen Ku, Dun-Bao Ruan, Chin-Hsiu Huang, Yi-Wen Hsu, Meng-Yang Chen (National Tsing Hua Univ., Taiwan)
Pagepp. 116 - 117


Session S5  High-k Gate Stack 1
Time: 17:20 - 18:30 Tuesday, November 21, 2017
Chairs: Toshihide Nabatame (NIMS, Japan), M. H. Lee (National Taiwan Normal Univ., Taiwan)

S5-1 (Time: 17:20 - 17:50)
Title(Invited Paper) Negative Capacitance: Theory, Practice and Limitations
AuthorYu Jin Kim, Min Hyuk Park, *Cheol Seong Hwang (Seoul National Univ., Republic of Korea)
Pagep. 118

S5-2 (Time: 17:50 - 18:10)
TitleTemperatures Induced Anomalous Change in Effective Charges of Al2O3/SiO2 Interface Dipole Layer
Author*Siri Nittayakasetwat, Koji Kita (Univ. of Tokyo, Japan)
Pagepp. 120 - 121

S5-3 (Time: 18:10 - 18:30)
TitleMobility Degradation by Remote Coulomb Scattering and Distribution of Charge and Dipole in Al2O3/GeOx Gate Stacks of Ge Based MOSFET
Author*Lixing Zhou, Xiaolei Wang, Jinjuan Xiang, Chao Zhao, Tianchun Ye, Wenwu Wang (Chinese Academy of Sciences, China)
Pagepp. 122 - 123



Wednesday, November 22, 2017

Session S6  Process and Reliability of Dielectrics
Time: 9:00 - 10:50 Wednesday, November 22, 2017
Chairs: Hiroshi Nohira (Tokyo City Univ., Japan), Jiro Yugami (Hitachi Kokusai Electric, Japan)

S6-1 (Time: 9:00 - 9:30)
Title(Invited Paper) Reliability Factors of Ultrathin Dielectric Films Based on Highly Controlled SiO2 Films
Author*Kikuo Yamabe, Ryu Hasunuma (Univ. of Tsukuba, Japan)
Pagepp. 124 - 127

Young Award
S6-2 (Time: 9:30 - 9:50)
TitleExperimental Evidence of Trap Level Modulation in SiN Thin Film by Hydrogen Annealing
Author*Harumi Seki, Yuuichi Kamimuta, Yuichiro Mitani (Toshiba, Japan)
Pagepp. 128 - 129

S6-3 (Time: 9:50 - 10:10)
TitlePhoto-Induced Enhancement of Oxidation on p- and n-type Si(001) Surfaces
Author*Yuki Sekihata, Shuichi Ogawa (Tohoku Univ., Japan), Akitaka Yoshigoe (Japan Atomic Energy Agency, Japan), Ryo Taga (Tohoku Univ., Japan), Alexander Klyushin, Emilia Carbonio, Axel Knop-Gericke (Fritz Haber Institute, Germany), Yuji Takakuwa (Tohoku Univ., Japan)
Pagepp. 130 - 131

S6-4 (Time: 10:10 - 10:30)
TitleReconsideration of Si Pillar Thermal Oxidation Mechanism
Author*Hiroyuki Kageshima (Shimane Univ., JST-ACCEL, Japan), Kenji Shiraishi (Nagoya Univ., JST-ACCEL, Japan), Tetsuo Endoh (Tohoku Univ., JST-ACCEL, Japan)
Pagepp. 132 - 133

S6-5 (Time: 10:30 - 10:50)
TitleChemical Trends of Metal Species Stability in Amorphous-SiO2
Author*Takeshi Miyajima, Hiroki Sirakawa, Masaaki Araidai, Kenji Shiraishi (Nagoya Univ., Japan)
Pagepp. 134 - 135


Session S7  High-k Gate Stack 2
Time: 11:10 - 12:20 Wednesday, November 22, 2017
Chairs: Masao Inoue (Renesas Electronics, Japan), C. S. Hwang (Seoul National Univ., Republic of Korea)

S7-1 (Time: 11:10 - 11:40)
Title(Invited Paper) Characteristics of Ultra-Thin Ferroelectric HfZrOx on Negative-Capacitance FETs for Steep Subthreshold Swing
Author*M. H. Lee, Y.-C. Chou, S.-S. Gu, C.-Y. Liao, R.-C. Hong, Z.-Y. Wang, S.-Y. Chen, P.-G. Chen, C.-Y. Kuo, C.-H. Tang, H.-H. Chen (National Taiwan Normal Univ., Taiwan), K.-T. Chen, S. T. Chang (National Chung Hsing Univ., Taiwan), M.-H. Liao (National Taiwan Univ., Taiwan), K.-S. Li (National Nano Device Laboratories, Taiwan)
Pagepp. 136 - 137

Young Award
S7-2 (Time: 11:40 - 12:00)
TitleImprovement in Ferroelectricity of HfxZr1-xO2 Thin Films Using Double Nanocrystal ZrO2 Layers
Author*Takashi Onaya (Meiji Univ./NIMS, Japan), Toshihide Nabatame (NIMS/JST CREST, Japan), Naomi Sawamoto (Meiji Univ., Japan), Akihiko Ohi, Naoki Ikeda, Toyohiro Chikyow (NIMS, Japan), Atsushi Ogura (Meiji Univ., Japan)
Pagepp. 138 - 139

S7-3 (Time: 12:00 - 12:20)
TitleEnhanced Electrical Characteristics of FinFETs with Multilayer High-k Dielectric Gate Stack
Author*Meng-Yang Chen, Kuei-Shu Chang-Liao, Yan-Lin Li, Dun-Bao Ruan, Chin-Hsiu Huang, Yi-Wen Hsu, Shang-Fu Tsai (National Tsing Hua Univ., Taiwan)
Pagepp. 140 - 141


Session S8  Characterization of SiC MOS 1
Time: 14:00 - 15:40 Wednesday, November 22, 2017
Chairs: Takuji Hosoi (Osaka Univ., Japan), Eisuke Tokumitsu (JAIST, Japan)

S8-1 (Time: 14:00 - 14:20)
TitleChange of SiO(N) Thermal Growth Kinetics and Element Distribution on 4H-SiC by Foreign Elements (La and N) Introduction
Author*Ryota Sakuta, Hirohisa Hirai, Koji Kita (Univ. of Tokyo, Japan)
Pagepp. 142 - 143

Young Award
S8-2 (Time: 14:20 - 14:40)
TitleIn-Plane X-ray Diffractometry Study on Thermal Oxidation-induced Anomalous Lattice Distortion at 4H-SiC Surfaces
Author*Adhi Dwi Hatmanto, Koji Kita (Univ. of Tokyo, Japan)
Pagepp. 144 - 145

S8-3 (Time: 14:40 - 15:00)
TitleAnalysis of Fast and Slow Responses of Interface Traps in p-type SiC MOS Capacitors by Conductance Method
Author*Yuki Karamoto, Xufang Zhang, Dai Okamoto (Univ. of Tsukuba, Japan), Mitsuru Sometani, Tetsuo Hatakeyama, Shinsuke Harada (AIST, Japan), Noriyuki Iwamuro, Hiroshi Yano (Univ. of Tsukuba, Japan)
Pagepp. 146 - 147

S8-4 (Time: 15:00 - 15:20)
TitleEvaluation of Deep Trap and Near-interface Oxide Trap Density at SiO2/SiC Interface by Photo-assisted CV Measurement
Author*Mizuki Nishida, Hirohisa Hirai, Koji Kita (Univ. of Tokyo, Japan)
Pagepp. 148 - 149

S8-5 (Time: 15:20 - 15:40)
TitleImpact of Oxide Thickness on the Density Distribution of Near-interface Traps in 4H-SiC MOS Capacitors
Author*Xufang Zhang, Dai Okamoto (Univ. of Tsukuba, Japan), Tetsuo Hatakeyama, Mitsuru Sometani, Shinsuke Harada (AIST, Japan), Noriyuki Iwamuro, Hiroshi Yano (Univ. of Tsukuba, Japan)
Pagepp. 150 - 151


Session S9  Characterization of SiC MOS 2
Time: 16:00 - 16:50 Wednesday, November 22, 2017
Chairs: Eisuke Tokumitsu (JAIST, Japan), Takuji Hosoi (Osaka Univ., Japan)

S9-1 (Time: 16:00 - 16:20)
TitleComparison between Conduction Mechanisms of Leakage Current in Nitrided Thermal SiO2 on 4H-SiC Si- and C-face Substrates
Author*Yuji Kiuchi, Mitsuru Sometani (AIST, Japan), Dai Okamoto (Univ. of Tsukuba, Japan), Tetsuo Hatakeyama, Shinsuke Harada (AIST, Japan), Hiroshi Yano (Univ. of Tsukuba, Japan), Yoshiyuki Yonezawa, Hajime Okumura (AIST, Japan)
Pagepp. 152 - 153

S9-2 (Time: 16:20 - 16:50)
Title(Invited Paper) Floating Electron States in SiC and its Impact on the SiC Electronic Devices
Author*Yu-ichiro Matsushita, Atsushi Oshiyama (Univ. of Tokyo, Japan)
Pagepp. 154 - 155


Session C  Closing Remarks
Time: 16:50 - 17:10 Wednesday, November 22, 2017
Chairs: Heiji Watanabe (Osaka Univ., Japan), Yasuo Nara (Univ. of Hyogo, Japan)