2015 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY
Technical Program

Remark: The presenter of each paper is marked with "*".

Technical Program: One Page (Not Separated) version

Author Index: HERE

Session Schedule

Monday, November 2, 2015

Opening Address
13:00 - 13:10

K1 Keynote 1
13:10 - 14:10

S1 High-k Gate Stack and Materials
14:10 - 15:20

Coffee Break
15:20 - 15:40

L Special Lecture
15:40 - 16:20

G Poster Shotgun
16:20 - 16:50

P Poster Session
16:50 - 18:50

Tuesday, November 3, 2015

K2 Keynote 2
9:00 - 9:40

Break
9:40 - 10:00

S2 Memory Materials and Devices
10:00 - 11:30

Lunch
11:30 - 13:00

S3 Process and Evaluation for New Channel Materials
13:00 - 15:00

Coffee Break
15:00 - 15:20

S4 Power Device and Characterization
15:20 - 17:30

Break
17:30 - 17:45

Banquet
17:45 - 20:00

Wednesday, November 4, 2015

S5 Interface Control and Reliability for Devices
9:00 - 10:50

Break
10:50 - 11:10

S6 Steep Slope FET
11:10 - 12:30

Lunch
12:30 - 14:00

S7 New Channel Materials
14:00 - 15:40

Coffee Break
15:40 - 16:00

S8 Exotic Materials and Devices
16:00 - 17:10

Closing Remarks
17:10 - 17:30

List of papers

Remark: The presenter of each paper is marked with "*".

Monday, November 2, 2015

Session K1 Keynote 1
Time: 13:10 - 14:10 Monday, November 2, 2015
Chairs: Toyohiro Chikyow (NIMS, Japan), Shinji Migita (AIST, Japan)

K1-1 (Time: 13:10 - 14:10)

Title	(Keynote Address) High Performance NEMS Devices for Emerging Sensing Embedded Applications and Integration in CMOS Devices
Author	*Thomas Ernst (CEA Leti, France)
Page	pp. 1 - 4

Session S1 High-k Gate Stack and Materials
Time: 14:10 - 15:20 Monday, November 2, 2015
Chairs: Toshihide Nabatame (NIMS, Japan), Koji Eriguchi (Kyoto Univ., Japan)

S1-1 (Time: 14:10 - 14:40)

Title	(Invited Paper) Preparation of Fluorite-Structured Ferroelectric Thin Films and Their Characterization
Author	*Takao Shimizu, Kiriha Katayama, Tatsuhiko Yokouchi, Takahiro Oikawa (Tokyo Inst. of Tech., Japan), Takahisa Shiraishi, Taknori Kiguchi, Toyohiko Konno (Tohoku Univ., Japan), Hiroshi Uchida, Hiroshi Funakubo (Sophia Univ., Japan)
Page	pp. 5 - 6

S1-2 (Time: 14:40 - 15:00)

Title	Ferroelectric Properties of Non-Doped Thin HfO₂ Films
Author	*Tomonori Nishimura, Takeaki Yajima (Univ. of Tokyo, Japan), Shinji Migita (Advanced Industrial Science and Technology, Japan), Akira Toriumi (Univ. of Tokyo, Japan)
Page	pp. 7 - 8

S1-3 (Time: 15:00 - 15:20)

Title	Consideration on the Origin of Dipole Layer Formation at Chemically Reactive and Non-Reactive Oxide/SiO₂ Interfaces
Author	*Jiayang Fei, Koji Kita (Univ. of Tokyo, Japan)
Page	pp. 9 - 10

Session L Special Lecture
Time: 15:40 - 16:20 Monday, November 2, 2015
Chair: Yukiharu Uraoka (NAIST, Japan)

L-1 (Time: 15:40 - 16:20)

Title	(Special Lecture) Technical Advancements and Scientific Impacts of HfO₂ Gate Stacks
Author	*Akira Toriumi (Univ. of Tokyo, Japan)
Page	pp. 11 - 12

Session G Poster Shotgun
Time: 16:20 - 16:50 Monday, November 2, 2015
Chair: Shinji Migita (AIST, Japan)

Session P Poster Session
Time: 16:50 - 18:50 Monday, November 2, 2015
Chair: Shinji Migita (AIST, Japan)

P-1

Title	Molecular Dynamics Study on Dipole Layer Formation at Mg_xAl_yO_x+1.5y/SiO₂ Interfaces
Author	*Ryota Kunugi, Kosuke Shimura, Takanobu Watanabe (Waseda Univ., Japan)
Page	pp. 13 - 14

P-2

Title	New High-Temperature Instability of ALD-Al₂O₃ MIS Capacitors
Author	*Daisuke Matsumura (Waseda Univ., Japan), Atsushi Hiraiwa (Waseda.Univ., Japan), Hiroshi Kawarada (Waseda Univ., Japan)
Page	pp. 15 - 16

P-3

Title	Self-Aligned Fin-Shaped Tunnel FET without Space between Gate and Source/Drain and Using i-line Photolithograph
Author	C.-C. Cheng, C. Liu, P.-G. Chen, K.-Y. Chu, M.-J. Xie, S.-N. Liu, J.-W. Lee, S.-J. Huang (National Taiwan Normal Univ., Taiwan), M.-H. Liao (National Taiwan Univ., Taiwan), *M. H. Lee (National Taiwan Normal Univ., Taiwan)
Page	pp. 17 - 18

P-4

Title	Study of Epitaxial La₂O₃ High-k/Ge(111) Interface by X-ray Photoelectron Spectroscopy
Author	*Takeshi Kanashima (Osaka Univ., Japan), Hiroshi Nohira (Tokyo City Univ., Japan), Masato Zenitaka, Taro Kobayashi, Riku Yamashiro, Shinya Yamada, Kohei Hamaya (Osaka Univ., Japan)
Page	pp. 19 - 20

P-5

Title	Low-Temperature Fabrication of a Gate Stack Structure for Ge-Based Spin-MOSFET
Author	*Yuichi Fujita, Takayasu Oka (Osaka Univ., Japan), Yuta Nagatomi, Keisuke Yamamoto (Kyushu Univ., Japan), Michihiro Yamada (Keio Univ., Japan), Kentarou Sawano (Tokyo City Univ., Japan), Shinya Yamada, Takeshi Kanashima (Osaka Univ., Japan), Hiroshi Nakashima (Kyushu Univ., Japan), Kohei Hamaya (Osaka Univ., Japan)
Page	pp. 21 - 22

P-6

Title	First Principles Study for Initial Oxidation Process on Ge(100) Surfaces
Author	Takahiro Mizukoshi, *Masato Oda (Wakayama Univ., Japan)
Page	pp. 23 - 24

P-7

Title	High Voltage MOS Transistors with Gradual Junction Profile in Drift Region
Author	*Jone F. Chen, Teng-Jen Ai, Yen-Lin Tsai (National Cheng Kung Univ., Taiwan), Hao-Tang Hsu, Chih-Yuan Chen, Hann-Ping Hwang (Powerchip Technology, Taiwan)
Page	pp. 25 - 26

P-8

Title	Hole Trapping Characteristics of Nitride-Based Charge Trapping Memories Using the Constant-Current Carrier Injection Method
Author	*Sheikh Rashel Al Ahmed, Shin Tanaka, Kiyoteru Kobayashi (Tokai Univ., Japan)
Page	pp. 27 - 28

P-9

Title	Analysis of Local Electric Conductive Properties by Electronic Tension Density
Author	*Hiroo Nozaki, Masato Senami, Kazuhide Ichikawa, Akitomo Tachibana (Kyoto Univ., Japan)
Page	pp. 29 - 30

P-10

Title	Dimension Effect on Characteristics and Hot-Carrier Reliability in High Voltage MOSFETs
Author	*Jone F. Chen, Yu Ming Liu, Yu Hung Chen (National Cheng Kung Univ., Taiwan), Hao-Tang Hsu, Chih-Yuan Chen, Hann-Ping Hwang (Powerchip Technology, Taiwan)
Page	pp. 31 - 32

P-11

Title	Length Dependency Expectation of Negative Bias Temperature Instability Degradation
Author	*Ji-Hoon Seo, Gang-Jun Kim, Donghee Son (POSTECH, Republic of Korea), Nam-Hyun Lee, Youngha Kang (Samsung Electronics, Republic of Korea)
Page	pp. 33 - 34

P-12

Title	Formation of High Density Ti Nanodots and Evaluation of Resistive Switching Properties of SiO_x-ReRAMs with Ti Nanodots
Author	*Yusuke Kato, Akio Ohta, Takashi Arai, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ., Japan)
Page	pp. 35 - 36

P-13

Title	Hard X-Ray Photoelectron Spectroscopic Study of Bottom Electrode Effect on Interface Reaction in Resistive Changing Memory Structure
Author	*Takahiro Nagata, Yoshiyuki Yamashita, Hideki Yoshikawa, Masataka Imura, Seungjun Oh, Kazuyoshi Kobashi, Toyohiro Chikyow (NIMS, Japan)
Page	pp. 37 - 38

P-14

Title	Characteristics of TiO₂/Al₂O₃/TiO₂ Capacitors with Plasma-Enhanced ALD RuO₂ Bottom Electrode for Future DRAM
Author	*Tomomi Sawada, Toshihide Nabatame (International Center for Materials Nanoarchitectonics (NIMS), Japan), Ippei Yamamoto (Shibaura Inst. of Tech., Japan), Kazunori Kurishima, Takashi Onaya (Meiji Univ., Japan), Akihiko Ohi (International Center for Materials Nanoarchitectonics (NIMS), Japan), Kazuhiro Ito, Makoto Takahashi, Kazuyuki Kohama (Osaka Univ., Japan), Tomoji Ohishi (Shibaura Inst. of Tech., Japan), Atsushi Ogura (Meiji Univ., Japan), Tadaaki Nagao (International Center for Materials Nanoarchitectonics (NIMS), Japan)
Page	pp. 39 - 40

P-15

Title	Tailoring the 4H-SiC/SiO₂ MOS-Interface for SiC-Based Power Switches
Author	Aleksey Mikhaylov (St. Petersburg Electrotechnical Univ., Russian Federation), Adolf Schöner (Ascatron AB, Sweden), *Victor Luchinin (St. Petersburg Electrotechnical Univ., Russian Federation), Sergey Reshanov (Ascatron AB, Sweden), Hoger Bartolf, Giovanni Alfieri, Renato Minamisawa (ABB Schweiz AG, Switzerland), Alexey Afanasyev (St. Petersburg Electrotechnical Univ., Russian Federation), Lars Knoll (Ascatron AB, Sweden)
Page	pp. 41 - 42

P-16

Title	Investigation of Initial Oxide Growth on GaN Epitaxial Films
Author	*Takahiro Yamada, Joyo Ito, Ryohei Asahara, Mikito Nozaki (Osaka Univ., Japan), Satoshi Nakazawa, Masahiro Ishida, Tetsuo Ueda (Panasonic, Japan), Akitaka Yoshigoe (Japan Atomic Energy Agency, Japan), Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan)
Page	pp. 43 - 44

P-17

Title	Photoemission Study of Thermally-Grown SiO₂/4H-SiC Structure.
Author	*Hiromasa Watanabe, Akio Ohta, Nobuyuki Fujimura, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ., Japan)
Page	pp. 45 - 46

P-18

Title	Effective Low Cost SiO₂ Passivation on Silicon Using Perhydropolysilazane
Author	*Chihiro Hagiwara, Hiroshi Nagayoshi (National Inst. of Tech., Tokyo collage, Japan)
Page	pp. 47 - 48

P-19

Title	Evaluation of SiNPs/SiO₂ Composite Structure
Author	*Hirotomo Demura (National Inst. of Tech., Tokyo College, Japan), Alexander Ulyashin (SINTEF, Norway), Hiroshi Nagayoshi (National Inst. of Tech., Tokyo College, Japan)
Page	pp. 49 - 50

P-20

Title	Investigate Dielectric Charging Effect of a Capacitive RF-MEMS Switch by FEM Simulation
Author	Li-Ya Ma, *Norhayati Soin (Univ. of Malaya, Malaysia), Anis Nurashikin Nordin (International Islamic Univ. Malayisa, Malaysia)
Page	pp. 51 - 52

P-21

Title	Dielectric Nanoparticle/Liquid Source SiO₂ Back Reflector for Solar Cells
Author	*Takuya Murooka, Hiroshi Nagayoshi (National Inst. of Tech., Tokyo College, Japan)
Page	pp. 53 - 54

P-22

Title	Characterization of Thermoelectric Properties of Amorphous InGaZnO Thin Film
Author	*Yuta Fujimoto, Mutsunori Uenuma, Yasuaki Ishikawa, Yukiharu Uraoka (Nara Inst. of Science and Tech. (NAIST), Japan)
Page	pp. 55 - 56

P-23

Title	Novel Source Follower Transistor Structure without Lightly Doped Drain for High Performance CMOS Image Sensor
Author	*Hyeong-Sub Song, Sung-Kyu Kwon, Ga-Won Lee, Hi-Deok Lee (Chungnam National Univ., Republic of Korea)
Page	pp. 57 - 58

P-24

Title	Oxygen Vacancy formation into Anatase-TiO₂ Films by Oxidation of Trimethylaluminium
Author	*Ippei Yamamoto (Shibaura Inst. of Tech. (SIT), Japan), Toshihide Nabatame (National Institute for Materials Science (NIMS), Japan), Tomomi Sawada, Akihiko Ohi (NIMS, Japan), Kazunori Kurishima (Meiji Univ., Japan), Dao Duy Thang, Tadaaki Nagao, Toyohiro Chikyo (NIMS, Japan), Atsushi Ogura (Meiji Univ., Japan), Tomoji Ohishi (SIT, Japan)
Page	pp. 59 - 60

Tuesday, November 3, 2015

Session K2 Keynote 2
Time: 9:00 - 9:40 Tuesday, November 3, 2015
Chair: Toyohiro Chikyow (NIMS, Japan)

K2-1 (Time: 9:00 - 9:40)

Title	(Keynote Address) Challenge for Ultra High Density 3D Nonvolatile Memory
Author	*Hideaki Aochi (Toshiba, Japan)
Page	pp. 61 - 62

Session S2 Memory Materials and Devices
Time: 10:00 - 11:30 Tuesday, November 3, 2015
Chairs: Eisuke Tokumitsu (JAIST, Japan), Koichi Muraoka (Toshiba, Japan)

S2-1 (Time: 10:00 - 10:30)

Title	(Invited Paper) Ge_xTe_1-x/Sb₂Te₃ Topological Switching Random Access Memory (TRAM)
Author	*Norikatsu Takaura (Hitachi, Research & Development Group, Center for Technology Innovation- Electronics, Japan)
Page	pp. 63 - 64

S2-2 (Time: 10:30 - 10:50)

Title	Resistive Switching and Memory Effects in BE-Pt/Al2O3/TiO2/Pt-TE and BE-Pt/TiO2/Al2O3/Pt-TE Systems Fabricated by Atomic Layer Deposition
Author	Liudmila Alekseeva, *Anatoly Petrov, Alexander Romanov (St. Petersburg Electrotechnical Univ., Russian Federation), Toyohiro Chikyow, Toshihide Nabatame (NIMS, Japan), Dmitry Chigirev, Eugeny Osachev (St. Petersburg Electrotechnical Univ., Russian Federation)
Page	pp. 65 - 66

S2-3 (Time: 10:50 - 11:10)

Title	Viable Poly-Si Nanowire Flash Memory Devices with Low Temperature-formed SiO₂ Tunneling and Si₃N₄ Trapping Layers
Author	*Chia-Hsin Cheng, Kuei-Shu Chang-Liao, Hsin-Kai Fang, Chun-Yuan Chen, Po-Hao Chen, Dong-Yan Li (National Tsing Hua Univ., Taiwan), Chang-Hong Shen, Jia-Min Shieh (National Nano Device Laboratories, Taiwan)
Page	pp. 67 - 68

S2-4 (Time: 11:10 - 11:30)

Title	Metastable Crystalline Hf Oxide with Si Addition as High-k Charge Storage Layer
Author	*Masao Inoue, Masaharu Mizutani, Masaru Kadoshima, Kenichiro Sonoda, Tomohiro Yamashita, Masazumi Matsuura (Renesas Electronics, Japan)
Page	pp. 69 - 70

Session S3 Process and Evaluation for New Channel Materials
Time: 13:00 - 15:00 Tuesday, November 3, 2015
Chairs: Toshihide Nabatame (NIMS, Japan), Jiro Yugami (Hitachi Kokusai Electric, Japan)

S3-1 (Time: 13:00 - 13:30)

Title	(Invited Paper) ALD of Dielectrics for Advanced Channel Materials - Initial Interface Formation -
Author	Antonio T. Lucero, YoungChul Byun (U. Texas, Dallas, U.S.A.), Jaegil Lee, Lanxia Cheng, *Jiyoung Kim (, U.S.A.)
Page	pp. 71 - 72

S3-2 (Time: 13:30 - 13:50)

Title	Influence of Atomic Layer Deposition Temperature of GeO₂ Layer on Electrical Properties of Ge Gate Stack
Author	*Masayuki Kanematsu, Shigehisa Shibayama, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ., Japan)
Page	pp. 73 - 74

S3-3 (Time: 13:50 - 14:10)

Title	The Impact of Energy Barrier Height on Border Traps in III-V Gate Stacks
Author	*Shinichi Yoshida, Satoshi Taniguchi, Hideki Minari (Sony, Japan), Dennis Lin, Tsvetan Ivanov (imec, Belgium), Heiji Watanabe (Osaka Univ., Japan), Masashi Nakazawa (Sony, Japan), Nadine Collaert, Aaron Thean (imec, Belgium)
Page	pp. 75 - 76

S3-4 (Time: 14:10 - 14:40)

Title	(Invited Paper) Ab Initio Investigations for Interface Electronic Structures of SiC-MOS
Author	*Tomoya Ono, Christopher Kirkham (Univ. of Tsukuba, Japan)
Page	pp. 77 - 78

S3-5 (Time: 14:40 - 15:00)

Title	Evaluation of Energy Band Structure of Si_1-xSn_x by Density Functional Theory Calculation and Photoelectron Spectroscopy
Author	*Yuki Nagae (Nagoya Univ., Japan), Shigehisa Shibayama (Nagoya Univ., Grad. Sch. of Eng., Japan), Masashi Kurosawa, Masaaki Araidai, Mitsuo Sakashita, Osamu Nakatsuka, Kenji Shiraishi, Shigeaki Zaima (Nagoya Univ., Japan)
Page	pp. 79 - 80

Session S4 Power Device and Characterization
Time: 15:20 - 17:30 Tuesday, November 3, 2015
Chairs: Heiji Watanabe (Osaka Univ., Japan), Eisuke Tokumitsu (JAIST, Japan)

S4-1 (Time: 15:20 - 15:50)

Title	(Invited Paper) Characterization and Control of GaN MOS Interfaces for Power Transistor Application
Author	*Tamotsu Hashizume, Zenji Yatabe (Hokkaido Univ., Japan)
Page	pp. 81 - 82

S4-2 (Time: 15:50 - 16:10)

Title	Novel Current Collapse Mode Induced by Source Leakage Current in AlGaN/GaN HEMTs
Author	*Kunihiro Tsubomi, Masakazu Muraguchi, Tetsuo Endoh (Tohoku Univ., Japan)
Page	pp. 83 - 84

S4-3 (Time: 16:10 - 16:30)

Title	Evaluation of Valence Band Maximum and Electron Affinity of SiO₂ and Si-based Semiconductors Using XPS
Author	*Nobuyuki Fujimura, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ., Japan)
Page	pp. 85 - 86

S4-4 (Time: 16:30 - 16:50)

Title	Density Profile Simulated for Thermal SiO₂ Films on 4H-SiC and the Crystallographic Orientation Dependence
Author	*Keisuke Bamoto, Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba, Japan)
Page	pp. 87 - 88

S4-5 (Time: 16:50 - 17:10)

Title	Initial Stage of SiO₂/SiC Interface Formation on C-face 4H-SiC
Author	Tomoya Sasago, Hitoshi Arai, Shunta Yamahori, *Hiroshi Nohira (Tokyo City Univ., Japan)
Page	pp. 89 - 90

S4-6 (Time: 17:10 - 17:30)

Title	Non-uniform Thermal Oxidation of SiC and Electrical Characteristics Properties
Author	*Ryu Nagai, Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba, Japan)
Page	pp. 91 - 92

Wednesday, November 4, 2015

Session S5 Interface Control and Reliability for Devices
Time: 9:00 - 10:50 Wednesday, November 4, 2015
Chairs: Masao Inoue (Renesas Electronics, Japan), Kenji Okada (TowerJazz Panasonic Semiconductor, Japan)

S5-1 (Time: 9:00 - 9:30)

Title	(Invited Paper) Noise Measurement Application for Nano-Electronic Device Development
Author	*Kenji Ohmori (Univ. of Tsukuba, Japan)
Page	pp. 93 - 94

S5-2 (Time: 9:30 - 9:50)

Title	Time Dependent Dielectric Breakdown in Nanowire Transistor
Author	*Kensuke Ota, Chika Tanaka, Toshinori Numata, Daisuke Matsushita, Masumi Saitoh (Toshiba, Japan)
Page	pp. 95 - 96

S5-3 (Time: 9:50 - 10:10)

Title	Rapid Temperature Oxidation at SiO₂/Si(001) Interface Studied by Real-Time X-Ray Photoelectron Spectroscopy: Rapid Cooling Versus Rapid Heating
Author	*Jiayi Tang, Shuichi Ogawa (Tohoku Univ., Japan), Akitaka Yoshigoe (Japan Atomic Energy Agency, Japan), Shinji Ishidzuka (National Inst. of Tech., Akita College, Japan), Yuji Takakuwa (Tohoku Univ., Japan)
Page	pp. 97 - 98

S5-4 (Time: 10:10 - 10:30)

Title	Extension of Silicon Emission Model for Silicon Pillar Oxidation
Author	*Hiroyuki Kageshima (Shimane Univ., JST-ACCEL, Japan), Kenji Shiraishi (Nagoya Univ., JST-ACCEL, Japan), Tetsuo Endoh (Tohoku Univ., JST-ACCEL, Japan)
Page	pp. 99 - 100

S5-5 (Time: 10:30 - 10:50)

Title	A New Reactive Force Field for Study on the Formation of SiC/SiO₂ Interface
Author	*Shuichiro Hashimoto, Takanobu Watanabe (Waseda Univ., Japan)
Page	pp. 101 - 102

Session S6 Steep Slope FET
Time: 11:10 - 12:30 Wednesday, November 4, 2015
Chair: Kuniyuki Kakushima (Tokyo Inst. of Tech., Japan)

S6-1 (Time: 11:10 - 11:40)

Title	(Invited Paper) Negative Capacitance Transistors
Author	Sayeef Salahuddin (UC Berkeley, U.S.A.)
Page	pp. 103 - 104

S6-2 (Time: 11:40 - 12:00)

Title	Ferroelectric Material Engineering in SOI-FETs for Realizing Steep Subthreshold Swing Using Negative Gate Capacitance
Author	*Hiroyuki Ota, Shinji Migita, Junichi Hattori, Koichi Fukuda (AIST, Japan), Akira Toriumi (Univ. of Tokyo, Japan)
Page	pp. 105 - 106

S6-3 (Time: 12:00 - 12:30)

Title	(Invited Paper) ON Current Boosting in Silicon-Based Tunnel FETs Utilizing Isoelectronic Trap Technology
Author	*Takahiro Mori, Yukinori Morita, Shinji Migita, Koichi Fukuda, Wataru Mizubayashi, Tetsuji Yasuda, Meishoku Masahara, Takashi Matsukawa, Hiroyuki Ota (AIST, Japan), Satoshi Moriyama (NIMS, Japan), Keiji Ono (RIKEN, Japan), Shota Iizuka, Takashi Nakayama (Chiba Univ., Japan)
Page	pp. 107 - 108

Session S7 New Channel Materials
Time: 14:00 - 15:40 Wednesday, November 4, 2015
Chairs: Takahiro Mori (AIST, Japan), Osamu Nakatsuka (Nagoya Univ., Japan)

S7-1 (Time: 14:00 - 14:30)

Title	(Invited Paper) ATLAS-TFET: Toward Green Transistors and Sensors
Author	Kaustav Banerjee (UC Santa Barbara, U.S.A.)
Page	pp. 109 - 112

S7-2 (Time: 14:30 - 15:00)

Title	(Invited Paper) Doping and Charge Compensation in Amorphous Oxide Semiconductors
Author	*Toshio Kamiya, Keisuke Ide, Hideya Kumomi, Hideo Hosono (Tokyo Inst. of Tech., Japan)
Page	pp. 113 - 114

S7-3 (Time: 15:00 - 15:20)

Title	Improvement of Bias Stress Reliability by Carbon-Doping in In-Si-O Channel TFT
Author	*Kazunori Kurishima (Meiji Univ., Japan), Toshihide Nabatame, Nobuhiko Mitoma, Takio Kizu, Kazuhito Tsukagoshi, Tomomi Sawada, Akihiko Ohi (NIMS, Japan), Ippei Yamamoto, Tomoji Ohishi (Shibaura Inst. of Tech., Japan), Toyohiro Chikyow (NIMS, Japan), Atsushi Ogura (Meiji Univ., Japan)
Page	pp. 115 - 116

S7-4 (Time: 15:20 - 15:40)

Title	Effects of Atomic Hydrogen Annealing on Poly-Ge Thin-Film Transistors
Author	*Akira Heya, Shota Hirano, Naoto Matsuo (Univ. of Hyogo, Japan)
Page	pp. 117 - 118

Session S8 Exotic Materials and Devices
Time: 16:00 - 17:10 Wednesday, November 4, 2015
Chair: Mitsuru Takenaka (Univ. of Tokyo, Japan)

S8-1 (Time: 16:00 - 16:20)

Title	Anomalous Electrical Properties of Au/SrTiO₃ Interface
Author	*Lun Xu, Takeaki Yajima, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo, Japan)
Page	pp. 119 - 120

S8-2 (Time: 16:20 - 16:40)

Title	Diamond Dielectric Thin Film Stabilizing Effect on Silicon Carbide Nanostructured Field Emission Array
Author	*Alexey Ivanov, Vladimir Ilyin, Victor Luchinin (St. Petersburg Electrotechnical Univ., Russian Federation), Valeriy Chernov, Anatoliy Vikharev (Institute of Applied Physics RAS, Russian Federation), Vladimir Golubkov (St. Petersburg Electrotechnical Univ., Russian Federation), Sergey Bogdanov (Institute of Applied Physics RAS, Russian Federation)
Page	pp. 121 - 122

S8-3 (Time: 16:40 - 17:10)

Title	(Invited Paper) Ion Control in an Electronically Insulative Thin Layer for Neuromorphic Applications
Author	*Tsuyoshi Hasegawa (Waseda Univ., Japan), Ilia Valov (Peter Gruenberg Institute, Germany), Thoru Tsuruoka (NIMS, Japan)
Page	pp. 123 - 124

2015 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY Technical Program

Session Schedule

List of papers

2015 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY
Technical Program