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2015 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY

Session S7  New Channel Materials
Time: 14:00 - 15:40 Wednesday, November 4, 2015
Chairs: Takahiro Mori (AIST, Japan), Osamu Nakatsuka (Nagoya Univ., Japan)

S7-1 (Time: 14:00 - 14:30)
Title(Invited Paper) ATLAS-TFET: Toward Green Transistors and Sensors
AuthorKaustav Banerjee (UC Santa Barbara, U.S.A.)
Pagepp. 109 - 112

S7-2 (Time: 14:30 - 15:00)
Title(Invited Paper) Doping and Charge Compensation in Amorphous Oxide Semiconductors
Author*Toshio Kamiya, Keisuke Ide, Hideya Kumomi, Hideo Hosono (Tokyo Inst. of Tech., Japan)
Pagepp. 113 - 114

S7-3 (Time: 15:00 - 15:20)
TitleImprovement of Bias Stress Reliability by Carbon-Doping in In-Si-O Channel TFT
Author*Kazunori Kurishima (Meiji Univ., Japan), Toshihide Nabatame, Nobuhiko Mitoma, Takio Kizu, Kazuhito Tsukagoshi, Tomomi Sawada, Akihiko Ohi (NIMS, Japan), Ippei Yamamoto, Tomoji Ohishi (Shibaura Inst. of Tech., Japan), Toyohiro Chikyow (NIMS, Japan), Atsushi Ogura (Meiji Univ., Japan)
Pagepp. 115 - 116

S7-4 (Time: 15:20 - 15:40)
TitleEffects of Atomic Hydrogen Annealing on Poly-Ge Thin-Film Transistors
Author*Akira Heya, Shota Hirano, Naoto Matsuo (Univ. of Hyogo, Japan)
Pagepp. 117 - 118