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2015 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY

Session S2  Memory Materials and Devices
Time: 10:00 - 11:30 Tuesday, November 3, 2015
Chairs: Eisuke Tokumitsu (JAIST, Japan), Koichi Muraoka (Toshiba, Japan)

S2-1 (Time: 10:00 - 10:30)
Title(Invited Paper) GexTe1-x/Sb2Te3 Topological Switching Random Access Memory (TRAM)
Author*Norikatsu Takaura (Hitachi, Research & Development Group, Center for Technology Innovation- Electronics, Japan)
Pagepp. 63 - 64

S2-2 (Time: 10:30 - 10:50)
TitleResistive Switching and Memory Effects in BE-Pt/Al2O3/TiO2/Pt-TE and BE-Pt/TiO2/Al2O3/Pt-TE Systems Fabricated by Atomic Layer Deposition
AuthorLiudmila Alekseeva, *Anatoly Petrov, Alexander Romanov (St. Petersburg Electrotechnical Univ., Russian Federation), Toyohiro Chikyow, Toshihide Nabatame (NIMS, Japan), Dmitry Chigirev, Eugeny Osachev (St. Petersburg Electrotechnical Univ., Russian Federation)
Pagepp. 65 - 66

S2-3 (Time: 10:50 - 11:10)
TitleViable Poly-Si Nanowire Flash Memory Devices with Low Temperature-formed SiO2 Tunneling and Si3N4 Trapping Layers
Author*Chia-Hsin Cheng, Kuei-Shu Chang-Liao, Hsin-Kai Fang, Chun-Yuan Chen, Po-Hao Chen, Dong-Yan Li (National Tsing Hua Univ., Taiwan), Chang-Hong Shen, Jia-Min Shieh (National Nano Device Laboratories, Taiwan)
Pagepp. 67 - 68

S2-4 (Time: 11:10 - 11:30)
TitleMetastable Crystalline Hf Oxide with Si Addition as High-k Charge Storage Layer
Author*Masao Inoue, Masaharu Mizutani, Masaru Kadoshima, Kenichiro Sonoda, Tomohiro Yamashita, Masazumi Matsuura (Renesas Electronics, Japan)
Pagepp. 69 - 70