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2015 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY

Session S1  High-k Gate Stack and Materials
Time: 14:10 - 15:20 Monday, November 2, 2015
Chairs: Toshihide Nabatame (NIMS, Japan), Koji Eriguchi (Kyoto Univ., Japan)

S1-1 (Time: 14:10 - 14:40)
Title(Invited Paper) Preparation of Fluorite-Structured Ferroelectric Thin Films and Their Characterization
Author*Takao Shimizu, Kiriha Katayama, Tatsuhiko Yokouchi, Takahiro Oikawa (Tokyo Inst. of Tech., Japan), Takahisa Shiraishi, Taknori Kiguchi, Toyohiko Konno (Tohoku Univ., Japan), Hiroshi Uchida, Hiroshi Funakubo (Sophia Univ., Japan)
Pagepp. 5 - 6

S1-2 (Time: 14:40 - 15:00)
TitleFerroelectric Properties of Non-Doped Thin HfO2 Films
Author*Tomonori Nishimura, Takeaki Yajima (Univ. of Tokyo, Japan), Shinji Migita (Advanced Industrial Science and Technology, Japan), Akira Toriumi (Univ. of Tokyo, Japan)
Pagepp. 7 - 8

S1-3 (Time: 15:00 - 15:20)
TitleConsideration on the Origin of Dipole Layer Formation at Chemically Reactive and Non-Reactive Oxide/SiO2 Interfaces
Author*Jiayang Fei, Koji Kita (Univ. of Tokyo, Japan)
Pagepp. 9 - 10