(Back to Session Schedule)

2015 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY

Session P  Poster Session
Time: 16:50 - 18:50 Monday, November 2, 2015
Chair: Shinji Migita (AIST, Japan)

P-1
TitleMolecular Dynamics Study on Dipole Layer Formation at MgxAlyOx+1.5y/SiO2 Interfaces
Author*Ryota Kunugi, Kosuke Shimura, Takanobu Watanabe (Waseda Univ., Japan)
Pagepp. 13 - 14

P-2
TitleNew High-Temperature Instability of ALD-Al2O3 MIS Capacitors
Author*Daisuke Matsumura (Waseda Univ., Japan), Atsushi Hiraiwa (Waseda.Univ., Japan), Hiroshi Kawarada (Waseda Univ., Japan)
Pagepp. 15 - 16

P-3
TitleSelf-Aligned Fin-Shaped Tunnel FET without Space between Gate and Source/Drain and Using i-line Photolithograph
AuthorC.-C. Cheng, C. Liu, P.-G. Chen, K.-Y. Chu, M.-J. Xie, S.-N. Liu, J.-W. Lee, S.-J. Huang (National Taiwan Normal Univ., Taiwan), M.-H. Liao (National Taiwan Univ., Taiwan), *M. H. Lee (National Taiwan Normal Univ., Taiwan)
Pagepp. 17 - 18

P-4
TitleStudy of Epitaxial La2O3 High-k/Ge(111) Interface by X-ray Photoelectron Spectroscopy
Author*Takeshi Kanashima (Osaka Univ., Japan), Hiroshi Nohira (Tokyo City Univ., Japan), Masato Zenitaka, Taro Kobayashi, Riku Yamashiro, Shinya Yamada, Kohei Hamaya (Osaka Univ., Japan)
Pagepp. 19 - 20

P-5
TitleLow-Temperature Fabrication of a Gate Stack Structure for Ge-Based Spin-MOSFET
Author*Yuichi Fujita, Takayasu Oka (Osaka Univ., Japan), Yuta Nagatomi, Keisuke Yamamoto (Kyushu Univ., Japan), Michihiro Yamada (Keio Univ., Japan), Kentarou Sawano (Tokyo City Univ., Japan), Shinya Yamada, Takeshi Kanashima (Osaka Univ., Japan), Hiroshi Nakashima (Kyushu Univ., Japan), Kohei Hamaya (Osaka Univ., Japan)
Pagepp. 21 - 22

P-6
TitleFirst Principles Study for Initial Oxidation Process on Ge(100) Surfaces
AuthorTakahiro Mizukoshi, *Masato Oda (Wakayama Univ., Japan)
Pagepp. 23 - 24

P-7
TitleHigh Voltage MOS Transistors with Gradual Junction Profile in Drift Region
Author*Jone F. Chen, Teng-Jen Ai, Yen-Lin Tsai (National Cheng Kung Univ., Taiwan), Hao-Tang Hsu, Chih-Yuan Chen, Hann-Ping Hwang (Powerchip Technology, Taiwan)
Pagepp. 25 - 26

P-8
TitleHole Trapping Characteristics of Nitride-Based Charge Trapping Memories Using the Constant-Current Carrier Injection Method
Author*Sheikh Rashel Al Ahmed, Shin Tanaka, Kiyoteru Kobayashi (Tokai Univ., Japan)
Pagepp. 27 - 28

P-9
TitleAnalysis of Local Electric Conductive Properties by Electronic Tension Density
Author*Hiroo Nozaki, Masato Senami, Kazuhide Ichikawa, Akitomo Tachibana (Kyoto Univ., Japan)
Pagepp. 29 - 30

P-10
TitleDimension Effect on Characteristics and Hot-Carrier Reliability in High Voltage MOSFETs
Author*Jone F. Chen, Yu Ming Liu, Yu Hung Chen (National Cheng Kung Univ., Taiwan), Hao-Tang Hsu, Chih-Yuan Chen, Hann-Ping Hwang (Powerchip Technology, Taiwan)
Pagepp. 31 - 32

P-11
TitleLength Dependency Expectation of Negative Bias Temperature Instability Degradation
Author*Ji-Hoon Seo, Gang-Jun Kim, Donghee Son (POSTECH, Republic of Korea), Nam-Hyun Lee, Youngha Kang (Samsung Electronics, Republic of Korea)
Pagepp. 33 - 34

P-12
TitleFormation of High Density Ti Nanodots and Evaluation of Resistive Switching Properties of SiOx-ReRAMs with Ti Nanodots
Author*Yusuke Kato, Akio Ohta, Takashi Arai, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ., Japan)
Pagepp. 35 - 36

P-13
TitleHard X-Ray Photoelectron Spectroscopic Study of Bottom Electrode Effect on Interface Reaction in Resistive Changing Memory Structure
Author*Takahiro Nagata, Yoshiyuki Yamashita, Hideki Yoshikawa, Masataka Imura, Seungjun Oh, Kazuyoshi Kobashi, Toyohiro Chikyow (NIMS, Japan)
Pagepp. 37 - 38

P-14
TitleCharacteristics of TiO2/Al2O3/TiO2 Capacitors with Plasma-Enhanced ALD RuO2 Bottom Electrode for Future DRAM
Author*Tomomi Sawada, Toshihide Nabatame (International Center for Materials Nanoarchitectonics (NIMS), Japan), Ippei Yamamoto (Shibaura Inst. of Tech., Japan), Kazunori Kurishima, Takashi Onaya (Meiji Univ., Japan), Akihiko Ohi (International Center for Materials Nanoarchitectonics (NIMS), Japan), Kazuhiro Ito, Makoto Takahashi, Kazuyuki Kohama (Osaka Univ., Japan), Tomoji Ohishi (Shibaura Inst. of Tech., Japan), Atsushi Ogura (Meiji Univ., Japan), Tadaaki Nagao (International Center for Materials Nanoarchitectonics (NIMS), Japan)
Pagepp. 39 - 40

P-15
TitleTailoring the 4H-SiC/SiO2 MOS-Interface for SiC-Based Power Switches
AuthorAleksey Mikhaylov (St. Petersburg Electrotechnical Univ., Russian Federation), Adolf Schöner (Ascatron AB, Sweden), *Victor Luchinin (St. Petersburg Electrotechnical Univ., Russian Federation), Sergey Reshanov (Ascatron AB, Sweden), Hoger Bartolf, Giovanni Alfieri, Renato Minamisawa (ABB Schweiz AG, Switzerland), Alexey Afanasyev (St. Petersburg Electrotechnical Univ., Russian Federation), Lars Knoll (Ascatron AB, Sweden)
Pagepp. 41 - 42

P-16
TitleInvestigation of Initial Oxide Growth on GaN Epitaxial Films
Author*Takahiro Yamada, Joyo Ito, Ryohei Asahara, Mikito Nozaki (Osaka Univ., Japan), Satoshi Nakazawa, Masahiro Ishida, Tetsuo Ueda (Panasonic, Japan), Akitaka Yoshigoe (Japan Atomic Energy Agency, Japan), Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan)
Pagepp. 43 - 44

P-17
TitlePhotoemission Study of Thermally-Grown SiO2/4H-SiC Structure.
Author*Hiromasa Watanabe, Akio Ohta, Nobuyuki Fujimura, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ., Japan)
Pagepp. 45 - 46

P-18
TitleEffective Low Cost SiO2 Passivation on Silicon Using Perhydropolysilazane
Author*Chihiro Hagiwara, Hiroshi Nagayoshi (National Inst. of Tech., Tokyo collage, Japan)
Pagepp. 47 - 48

P-19
TitleEvaluation of SiNPs/SiO2 Composite Structure
Author*Hirotomo Demura (National Inst. of Tech., Tokyo College, Japan), Alexander Ulyashin (SINTEF, Norway), Hiroshi Nagayoshi (National Inst. of Tech., Tokyo College, Japan)
Pagepp. 49 - 50

P-20
TitleInvestigate Dielectric Charging Effect of a Capacitive RF-MEMS Switch by FEM Simulation
AuthorLi-Ya Ma, *Norhayati Soin (Univ. of Malaya, Malaysia), Anis Nurashikin Nordin (International Islamic Univ. Malayisa, Malaysia)
Pagepp. 51 - 52

P-21
TitleDielectric Nanoparticle/Liquid Source SiO2 Back Reflector for Solar Cells
Author*Takuya Murooka, Hiroshi Nagayoshi (National Inst. of Tech., Tokyo College, Japan)
Pagepp. 53 - 54

P-22
TitleCharacterization of Thermoelectric Properties of Amorphous InGaZnO Thin Film
Author*Yuta Fujimoto, Mutsunori Uenuma, Yasuaki Ishikawa, Yukiharu Uraoka (Nara Inst. of Science and Tech. (NAIST), Japan)
Pagepp. 55 - 56

P-23
TitleNovel Source Follower Transistor Structure without Lightly Doped Drain for High Performance CMOS Image Sensor
Author*Hyeong-Sub Song, Sung-Kyu Kwon, Ga-Won Lee, Hi-Deok Lee (Chungnam National Univ., Republic of Korea)
Pagepp. 57 - 58

P-24
TitleOxygen Vacancy formation into Anatase-TiO2 Films by Oxidation of Trimethylaluminium
Author*Ippei Yamamoto (Shibaura Inst. of Tech. (SIT), Japan), Toshihide Nabatame (National Institute for Materials Science (NIMS), Japan), Tomomi Sawada, Akihiko Ohi (NIMS, Japan), Kazunori Kurishima (Meiji Univ., Japan), Dao Duy Thang, Tadaaki Nagao, Toyohiro Chikyo (NIMS, Japan), Atsushi Ogura (Meiji Univ., Japan), Tomoji Ohishi (SIT, Japan)
Pagepp. 59 - 60